Etching of single crystalline silicon by hydrogen plasma and silicon deposition from Si 2 H 6 and SiH 4 for low temperature silicon epitaxy:
Gespeichert in:
| 1. Verfasser: | |
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| Format: | Abschlussarbeit Buch |
| Sprache: | English |
| Veröffentlicht: |
1993
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| Schlagworte: | |
| Beschreibung: | 138 S. Ill., graph. Darst. |
Internformat
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| 245 | 1 | 0 | |a Etching of single crystalline silicon by hydrogen plasma and silicon deposition from Si 2 H 6 and SiH 4 for low temperature silicon epitaxy |c Chunlin Wang |
| 264 | 1 | |c 1993 | |
| 300 | |a 138 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
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| 502 | |a München, Techn. Univ., Diss., 1993 | ||
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Datensatz im Suchindex
| _version_ | 1804123883276599296 |
|---|---|
| any_adam_object | |
| author | Wang, Chunlin |
| author_facet | Wang, Chunlin |
| author_role | aut |
| author_sort | Wang, Chunlin |
| author_variant | c w cw |
| building | Verbundindex |
| bvnumber | BV009543557 |
| classification_tum | ELT 280d FER 786d ELT 285d |
| ctrlnum | (OCoLC)46197298 (DE-599)BVBBV009543557 |
| discipline | Elektrotechnik Fertigungstechnik |
| format | Thesis Book |
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| id | DE-604.BV009543557 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T17:36:51Z |
| institution | BVB |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-006303915 |
| oclc_num | 46197298 |
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| owner | DE-91 DE-BY-TUM DE-12 DE-11 DE-188 |
| owner_facet | DE-91 DE-BY-TUM DE-12 DE-11 DE-188 |
| physical | 138 S. Ill., graph. Darst. |
| publishDate | 1993 |
| publishDateSearch | 1993 |
| publishDateSort | 1993 |
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| spelling | Wang, Chunlin Verfasser aut Etching of single crystalline silicon by hydrogen plasma and silicon deposition from Si 2 H 6 and SiH 4 for low temperature silicon epitaxy Chunlin Wang 1993 138 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier München, Techn. Univ., Diss., 1993 Einkristall (DE-588)4013901-3 gnd rswk-swf Silicium (DE-588)4077445-4 gnd rswk-swf Silan (DE-588)4337259-4 gnd rswk-swf Epitaxieschicht (DE-588)4152546-2 gnd rswk-swf Plasmaätzen (DE-588)4174821-9 gnd rswk-swf Disilan (DE-588)4150150-0 gnd rswk-swf CVD-Verfahren (DE-588)4009846-1 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Plasmaätzen (DE-588)4174821-9 s Silicium (DE-588)4077445-4 s Einkristall (DE-588)4013901-3 s DE-604 Epitaxieschicht (DE-588)4152546-2 s Disilan (DE-588)4150150-0 s CVD-Verfahren (DE-588)4009846-1 s Silan (DE-588)4337259-4 s |
| spellingShingle | Wang, Chunlin Etching of single crystalline silicon by hydrogen plasma and silicon deposition from Si 2 H 6 and SiH 4 for low temperature silicon epitaxy Einkristall (DE-588)4013901-3 gnd Silicium (DE-588)4077445-4 gnd Silan (DE-588)4337259-4 gnd Epitaxieschicht (DE-588)4152546-2 gnd Plasmaätzen (DE-588)4174821-9 gnd Disilan (DE-588)4150150-0 gnd CVD-Verfahren (DE-588)4009846-1 gnd |
| subject_GND | (DE-588)4013901-3 (DE-588)4077445-4 (DE-588)4337259-4 (DE-588)4152546-2 (DE-588)4174821-9 (DE-588)4150150-0 (DE-588)4009846-1 (DE-588)4113937-9 |
| title | Etching of single crystalline silicon by hydrogen plasma and silicon deposition from Si 2 H 6 and SiH 4 for low temperature silicon epitaxy |
| title_auth | Etching of single crystalline silicon by hydrogen plasma and silicon deposition from Si 2 H 6 and SiH 4 for low temperature silicon epitaxy |
| title_exact_search | Etching of single crystalline silicon by hydrogen plasma and silicon deposition from Si 2 H 6 and SiH 4 for low temperature silicon epitaxy |
| title_full | Etching of single crystalline silicon by hydrogen plasma and silicon deposition from Si 2 H 6 and SiH 4 for low temperature silicon epitaxy Chunlin Wang |
| title_fullStr | Etching of single crystalline silicon by hydrogen plasma and silicon deposition from Si 2 H 6 and SiH 4 for low temperature silicon epitaxy Chunlin Wang |
| title_full_unstemmed | Etching of single crystalline silicon by hydrogen plasma and silicon deposition from Si 2 H 6 and SiH 4 for low temperature silicon epitaxy Chunlin Wang |
| title_short | Etching of single crystalline silicon by hydrogen plasma and silicon deposition from Si 2 H 6 and SiH 4 for low temperature silicon epitaxy |
| title_sort | etching of single crystalline silicon by hydrogen plasma and silicon deposition from si 2 h 6 and sih 4 for low temperature silicon epitaxy |
| topic | Einkristall (DE-588)4013901-3 gnd Silicium (DE-588)4077445-4 gnd Silan (DE-588)4337259-4 gnd Epitaxieschicht (DE-588)4152546-2 gnd Plasmaätzen (DE-588)4174821-9 gnd Disilan (DE-588)4150150-0 gnd CVD-Verfahren (DE-588)4009846-1 gnd |
| topic_facet | Einkristall Silicium Silan Epitaxieschicht Plasmaätzen Disilan CVD-Verfahren Hochschulschrift |
| work_keys_str_mv | AT wangchunlin etchingofsinglecrystallinesiliconbyhydrogenplasmaandsilicondepositionfromsi2h6andsih4forlowtemperaturesiliconepitaxy |