Semiconductor metal interfaces studied by high resolution electron energy loss spectroscopy:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
1993
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| Schlagworte: | |
| Beschreibung: | Aachen, Technische Hochsch., Diss., 1993 |
| Beschreibung: | VII, 147 S. Ill., graph. Darst. |
Internformat
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Datensatz im Suchindex
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| author | Compañó Monte, Ramón |
| author_facet | Compañó Monte, Ramón |
| author_role | aut |
| author_sort | Compañó Monte, Ramón |
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| bvnumber | BV009531384 |
| classification_tum | ELT 091d PHY 701d PHY 793d |
| ctrlnum | (OCoLC)46252195 (DE-599)BVBBV009531384 |
| discipline | Physik Elektrotechnik |
| format | Book |
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| id | DE-604.BV009531384 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T17:36:36Z |
| institution | BVB |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-006293593 |
| oclc_num | 46252195 |
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| owner_facet | DE-91 DE-BY-TUM DE-29T DE-355 DE-BY-UBR DE-11 |
| physical | VII, 147 S. Ill., graph. Darst. |
| publishDate | 1993 |
| publishDateSearch | 1993 |
| publishDateSort | 1993 |
| record_format | marc |
| spelling | Compañó Monte, Ramón Verfasser aut Semiconductor metal interfaces studied by high resolution electron energy loss spectroscopy vorgelegt von Ramón Compañó Monte 1993 VII, 147 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Aachen, Technische Hochsch., Diss., 1993 Metall-Halbleiter-Kontakt (DE-588)4169590-2 gnd rswk-swf Elektronen-Energieverlustspektroskopie (DE-588)4123130-2 gnd rswk-swf Hochauflösendes Verfahren (DE-588)4287503-1 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Metall-Halbleiter-Kontakt (DE-588)4169590-2 s Elektronen-Energieverlustspektroskopie (DE-588)4123130-2 s Hochauflösendes Verfahren (DE-588)4287503-1 s DE-604 |
| spellingShingle | Compañó Monte, Ramón Semiconductor metal interfaces studied by high resolution electron energy loss spectroscopy Metall-Halbleiter-Kontakt (DE-588)4169590-2 gnd Elektronen-Energieverlustspektroskopie (DE-588)4123130-2 gnd Hochauflösendes Verfahren (DE-588)4287503-1 gnd |
| subject_GND | (DE-588)4169590-2 (DE-588)4123130-2 (DE-588)4287503-1 (DE-588)4113937-9 |
| title | Semiconductor metal interfaces studied by high resolution electron energy loss spectroscopy |
| title_auth | Semiconductor metal interfaces studied by high resolution electron energy loss spectroscopy |
| title_exact_search | Semiconductor metal interfaces studied by high resolution electron energy loss spectroscopy |
| title_full | Semiconductor metal interfaces studied by high resolution electron energy loss spectroscopy vorgelegt von Ramón Compañó Monte |
| title_fullStr | Semiconductor metal interfaces studied by high resolution electron energy loss spectroscopy vorgelegt von Ramón Compañó Monte |
| title_full_unstemmed | Semiconductor metal interfaces studied by high resolution electron energy loss spectroscopy vorgelegt von Ramón Compañó Monte |
| title_short | Semiconductor metal interfaces studied by high resolution electron energy loss spectroscopy |
| title_sort | semiconductor metal interfaces studied by high resolution electron energy loss spectroscopy |
| topic | Metall-Halbleiter-Kontakt (DE-588)4169590-2 gnd Elektronen-Energieverlustspektroskopie (DE-588)4123130-2 gnd Hochauflösendes Verfahren (DE-588)4287503-1 gnd |
| topic_facet | Metall-Halbleiter-Kontakt Elektronen-Energieverlustspektroskopie Hochauflösendes Verfahren Hochschulschrift |
| work_keys_str_mv | AT companomonteramon semiconductormetalinterfacesstudiedbyhighresolutionelectronenergylossspectroscopy |