Numerical analysis of semiconductor devices and integrated circuits: proceedings of the NASECODE Conference
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Dublin
Boole Pr.
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| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | Vol. 1 u.d.T.: Numerical analysis of semiconductor divices. - Ab vol. 3 u.d.T.: NASECODE Conference: NASECODE |
| ISBN: | 0906783038 |
Internformat
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| 245 | 1 | 0 | |a Numerical analysis of semiconductor devices and integrated circuits |b proceedings of the NASECODE Conference |
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Datensatz im Suchindex
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| adam_text | CONTENTS
Sponsors y
Acknowledgements VI
Preface VII
Part I
KEYNOTE PAPERS
Simplified Two-Dimensional Analysis for
Time-Dependent Carrier Transport and
Impurity Redistribution 3
Robzsit W Dutton, Hee-Gook Luz, and
Soo Young Oh
Functional Device Simulation By Merging
Numerical Building Blocks 34
W L Engl and H Dltdzi
Monte Carlo Analysis of Bipolar Tran-
sistor Fabrication Processes 63
David P Kznmdy
Hybrid Two-Dimensional Device Modeling 88
WmoKu KuAata
Time-Dependent Simulation of Coupled
Devices H3
M 5 Mock
Device Process Designing Aids for MOS 132
LSIs
Vujl Okuto, Yai uo Ohno and Masao Fukuma
PART II
CONTRIBUTED PAPERS
Computer Modelling of Surface Photovoltage
Method of Minority Carrier Diffusion
Length Measurement 155
M K Atom and Y T Ydow
(IX)
160
Three-Dimensional Transient Finite
Element Analysis of Semiconductor
Transport Equations
E M Bu tun Za, P E CottKaZZ, B M
Gn o amp; amp;m an, C T McMuZZen and K A
SaZ amp;bun g
Numerical Simulations with Finite
Elements of Non Linear Impurity Diffusion
in Silicon 166
E Caquot and A Ma/tfiocco
A Method of Obtaining Numerical Solutions
of Fokker-Planck Equations for Diffusion
Processes in Semiconductors and Related
Fields of Physics 171
W T Coffey
A Two-Dimensional Model for the p-Si
Metal Insulator Semiconductor Inversion
Layer (MIS-IL) Solar Cell 177
P Va VZi 6 change
A Continuation Method for the Calculation
of Potentials and Currents in Semi-
conductors 182
C dan Hatjan ,SJ VoZak and WPA StklZHetlb
Numerical Simulation of Base Currents
Using a Pocket Calculator
H VtnJu and R Enma
Simulation of Avalanche Breakdown in Diodes ^3
with Guard Electrodes
V G EdwandA
2*
Poly I L, New Structure amp; Computer Modeling 198
Mohamad H EZ amp;atd and KZt M Raihad
Large Signal Transient Response Simulations
of Submicron MESFET S 203
J Ea/ticaZIZ, P Kn u amp;Zu6 and J Fn ay
Energy and Momentum Conserving Simulation
of Millimeter-Wave Impatt Diodes ^08
R K Fn oaZtch and P A BZakay
(X)
213
A One-Dimensional Steady-State Numerical
Model of a Thyristor Under Common Gate
Configuration
E Kamkoutls, W Futop and J Machek
A Numerical Analysis of Bulk-Barrier
Diodes
E Langen , S Selbenkenn and H Made/1
Computer Simulation of Silicon Solar Cells
M S Lu ndAtn om, J L Gnay and R J Scfwantz
Numerical Analysis of Harmonic Distortion
in a Bipolar Transistor
J Machek and W Fatop
A Cut Map Algorithm for the Tolerancing
and Tuning Problem
V Q Mayne and A Uon e adl amp;
Interconnection Response in a Digital
System
G McCluAe and SQAMA UoAAaln
A Monte-Carlo Particle Model Study of the
Influence of the Doping Profiles on the
Characteristics of Field-Effect Tran-
sistors
C MogleAtue
Efficient Numerical Solution of Two-
Dimensional Nonlinear Diffusion Equations
with Nonuniformly Moving Boundaries: A
Versatile Tool for VLSI Process Modeling
W P Manpky and W F Halt and C V Maldonado
Numerical Analysis of Surface-State in
Short Channel MOSFET S
Takahtno Ucmata, Kunthlko GJada and Mo too
hlakano
A Finite Element Approach and Automatic
Mesh Generation for the Resolution of
Poisson s Equation in Reverse Biased
Two-Dimensional Semiconductor Devices
E Palm and F Van de Wiele
218
223
228
233
238
244
249
254
259
(XI)
264
Lateral Oxidation and Redistribution of
Dopants
S R PcnumalLL
Numerical Analysis of Breakdown Phenomena
in MOSFET s
A Schutz, S SclbcthoAA and B QJ Potzl
A Model to Simulate the Turn-Off
Characteristics of a Gate Turn-Off
Thyristor Having Shorted Anode Emitter
Yo amp;hitcAu Shimizu , Ma amp;ayoski hi alto, Motomi
Odamtuta , Yoikio Tc/iaiawa and HiAoAhi Tukul
The Motion of Electrons Subject to a
Transverse Electric Field
J E Sitch and hl P Maxfiicld
Numerical Analysis for Current-Mode Second
Breakdown in Epitaxial Planar Bipolar
Transistors using a Simple Model
hlobuyukl Takagaki, Kunlo Hanc and Tokio
Suzuki,
(XII)
iwiimaBR •dasffi^paessasssv ? ■ MBs
270
275
279
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| spelling | Numerical analysis of semiconductor devices and integrated circuits proceedings of the NASECODE Conference Dublin Boole Pr. txt rdacontent n rdamedia nc rdacarrier Vol. 1 u.d.T.: Numerical analysis of semiconductor divices. - Ab vol. 3 u.d.T.: NASECODE Conference: NASECODE Halbleiter (DE-588)4022993-2 gnd rswk-swf (DE-588)1071861417 Konferenzschrift gnd-content Halbleiter (DE-588)4022993-2 s DE-604 NASECODE Conference 2 1981 Dublin Sonstige (DE-588)1233949-0 oth HEBIS Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=012520663&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
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| title | Numerical analysis of semiconductor devices and integrated circuits proceedings of the NASECODE Conference |
| title_auth | Numerical analysis of semiconductor devices and integrated circuits proceedings of the NASECODE Conference |
| title_exact_search | Numerical analysis of semiconductor devices and integrated circuits proceedings of the NASECODE Conference |
| title_full | Numerical analysis of semiconductor devices and integrated circuits proceedings of the NASECODE Conference |
| title_fullStr | Numerical analysis of semiconductor devices and integrated circuits proceedings of the NASECODE Conference |
| title_full_unstemmed | Numerical analysis of semiconductor devices and integrated circuits proceedings of the NASECODE Conference |
| title_short | Numerical analysis of semiconductor devices and integrated circuits |
| title_sort | numerical analysis of semiconductor devices and integrated circuits proceedings of the nasecode conference |
| title_sub | proceedings of the NASECODE Conference |
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