Formierung flacher Dotierschichten in Silizium durch Niederenergieionenimplantation und Laserimpulsbestrahlung:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | German |
| Veröffentlicht: |
1993
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| Schlagworte: | |
| Beschreibung: | Jena, Univ., Diss., 1993 |
| Beschreibung: | 173 Bl. Ill., graph. Darst. |
Internformat
MARC
| LEADER | 00000nam a2200000 c 4500 | ||
|---|---|---|---|
| 001 | BV009469152 | ||
| 003 | DE-604 | ||
| 005 | 20011212 | ||
| 007 | t | ||
| 008 | 940407s1993 ad|| m||| 00||| gerod | ||
| 035 | |a (OCoLC)257929846 | ||
| 035 | |a (DE-599)BVBBV009469152 | ||
| 040 | |a DE-604 |b ger |e rakddb | ||
| 041 | 0 | |a ger | |
| 049 | |a DE-91 |a DE-355 |a DE-29T |a DE-11 | ||
| 084 | |a ELT 293d |2 stub | ||
| 084 | |a PHY 379d |2 stub | ||
| 100 | 1 | |a Kretzer, Olaf |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Formierung flacher Dotierschichten in Silizium durch Niederenergieionenimplantation und Laserimpulsbestrahlung |c von Olaf Kretzer |
| 264 | 1 | |c 1993 | |
| 300 | |a 173 Bl. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 500 | |a Jena, Univ., Diss., 1993 | ||
| 650 | 0 | 7 | |a Silicium |0 (DE-588)4077445-4 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Siliciumhalbleiter |0 (DE-588)4274465-9 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Ionenimplantation |0 (DE-588)4027606-5 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Laser |0 (DE-588)4034610-9 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a VLSI |0 (DE-588)4117388-0 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Ausheilung |0 (DE-588)4192968-8 |2 gnd |9 rswk-swf |
| 655 | 7 | |0 (DE-588)4113937-9 |a Hochschulschrift |2 gnd-content | |
| 689 | 0 | 0 | |a Silicium |0 (DE-588)4077445-4 |D s |
| 689 | 0 | 1 | |a VLSI |0 (DE-588)4117388-0 |D s |
| 689 | 0 | 2 | |a Ionenimplantation |0 (DE-588)4027606-5 |D s |
| 689 | 0 | 3 | |a Ausheilung |0 (DE-588)4192968-8 |D s |
| 689 | 0 | 4 | |a Laser |0 (DE-588)4034610-9 |D s |
| 689 | 0 | |5 DE-604 | |
| 689 | 1 | 0 | |a Siliciumhalbleiter |0 (DE-588)4274465-9 |D s |
| 689 | 1 | 1 | |a Ionenimplantation |0 (DE-588)4027606-5 |D s |
| 689 | 1 | 2 | |a Ausheilung |0 (DE-588)4192968-8 |D s |
| 689 | 1 | 3 | |a Laser |0 (DE-588)4034610-9 |D s |
| 689 | 1 | |5 DE-604 | |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-006263314 | ||
Datensatz im Suchindex
| _version_ | 1804123829612576768 |
|---|---|
| any_adam_object | |
| author | Kretzer, Olaf |
| author_facet | Kretzer, Olaf |
| author_role | aut |
| author_sort | Kretzer, Olaf |
| author_variant | o k ok |
| building | Verbundindex |
| bvnumber | BV009469152 |
| classification_tum | ELT 293d PHY 379d |
| ctrlnum | (OCoLC)257929846 (DE-599)BVBBV009469152 |
| discipline | Physik Elektrotechnik |
| format | Book |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01766nam a2200493 c 4500</leader><controlfield tag="001">BV009469152</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20011212 </controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">940407s1993 ad|| m||| 00||| gerod</controlfield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)257929846</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV009469152</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakddb</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">ger</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-91</subfield><subfield code="a">DE-355</subfield><subfield code="a">DE-29T</subfield><subfield code="a">DE-11</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">ELT 293d</subfield><subfield code="2">stub</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">PHY 379d</subfield><subfield code="2">stub</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Kretzer, Olaf</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Formierung flacher Dotierschichten in Silizium durch Niederenergieionenimplantation und Laserimpulsbestrahlung</subfield><subfield code="c">von Olaf Kretzer</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1993</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">173 Bl.</subfield><subfield code="b">Ill., graph. Darst.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Jena, Univ., Diss., 1993</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Silicium</subfield><subfield code="0">(DE-588)4077445-4</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Siliciumhalbleiter</subfield><subfield code="0">(DE-588)4274465-9</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Ionenimplantation</subfield><subfield code="0">(DE-588)4027606-5</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Laser</subfield><subfield code="0">(DE-588)4034610-9</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">VLSI</subfield><subfield code="0">(DE-588)4117388-0</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Ausheilung</subfield><subfield code="0">(DE-588)4192968-8</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="655" ind1=" " ind2="7"><subfield code="0">(DE-588)4113937-9</subfield><subfield code="a">Hochschulschrift</subfield><subfield code="2">gnd-content</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Silicium</subfield><subfield code="0">(DE-588)4077445-4</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">VLSI</subfield><subfield code="0">(DE-588)4117388-0</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="2"><subfield code="a">Ionenimplantation</subfield><subfield code="0">(DE-588)4027606-5</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="3"><subfield code="a">Ausheilung</subfield><subfield code="0">(DE-588)4192968-8</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="4"><subfield code="a">Laser</subfield><subfield code="0">(DE-588)4034610-9</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="1" ind2="0"><subfield code="a">Siliciumhalbleiter</subfield><subfield code="0">(DE-588)4274465-9</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2="1"><subfield code="a">Ionenimplantation</subfield><subfield code="0">(DE-588)4027606-5</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2="2"><subfield code="a">Ausheilung</subfield><subfield code="0">(DE-588)4192968-8</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2="3"><subfield code="a">Laser</subfield><subfield code="0">(DE-588)4034610-9</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-006263314</subfield></datafield></record></collection> |
| genre | (DE-588)4113937-9 Hochschulschrift gnd-content |
| genre_facet | Hochschulschrift |
| id | DE-604.BV009469152 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T17:35:59Z |
| institution | BVB |
| language | German |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-006263314 |
| oclc_num | 257929846 |
| open_access_boolean | |
| owner | DE-91 DE-BY-TUM DE-355 DE-BY-UBR DE-29T DE-11 |
| owner_facet | DE-91 DE-BY-TUM DE-355 DE-BY-UBR DE-29T DE-11 |
| physical | 173 Bl. Ill., graph. Darst. |
| publishDate | 1993 |
| publishDateSearch | 1993 |
| publishDateSort | 1993 |
| record_format | marc |
| spelling | Kretzer, Olaf Verfasser aut Formierung flacher Dotierschichten in Silizium durch Niederenergieionenimplantation und Laserimpulsbestrahlung von Olaf Kretzer 1993 173 Bl. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Jena, Univ., Diss., 1993 Silicium (DE-588)4077445-4 gnd rswk-swf Siliciumhalbleiter (DE-588)4274465-9 gnd rswk-swf Ionenimplantation (DE-588)4027606-5 gnd rswk-swf Laser (DE-588)4034610-9 gnd rswk-swf VLSI (DE-588)4117388-0 gnd rswk-swf Ausheilung (DE-588)4192968-8 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Silicium (DE-588)4077445-4 s VLSI (DE-588)4117388-0 s Ionenimplantation (DE-588)4027606-5 s Ausheilung (DE-588)4192968-8 s Laser (DE-588)4034610-9 s DE-604 Siliciumhalbleiter (DE-588)4274465-9 s |
| spellingShingle | Kretzer, Olaf Formierung flacher Dotierschichten in Silizium durch Niederenergieionenimplantation und Laserimpulsbestrahlung Silicium (DE-588)4077445-4 gnd Siliciumhalbleiter (DE-588)4274465-9 gnd Ionenimplantation (DE-588)4027606-5 gnd Laser (DE-588)4034610-9 gnd VLSI (DE-588)4117388-0 gnd Ausheilung (DE-588)4192968-8 gnd |
| subject_GND | (DE-588)4077445-4 (DE-588)4274465-9 (DE-588)4027606-5 (DE-588)4034610-9 (DE-588)4117388-0 (DE-588)4192968-8 (DE-588)4113937-9 |
| title | Formierung flacher Dotierschichten in Silizium durch Niederenergieionenimplantation und Laserimpulsbestrahlung |
| title_auth | Formierung flacher Dotierschichten in Silizium durch Niederenergieionenimplantation und Laserimpulsbestrahlung |
| title_exact_search | Formierung flacher Dotierschichten in Silizium durch Niederenergieionenimplantation und Laserimpulsbestrahlung |
| title_full | Formierung flacher Dotierschichten in Silizium durch Niederenergieionenimplantation und Laserimpulsbestrahlung von Olaf Kretzer |
| title_fullStr | Formierung flacher Dotierschichten in Silizium durch Niederenergieionenimplantation und Laserimpulsbestrahlung von Olaf Kretzer |
| title_full_unstemmed | Formierung flacher Dotierschichten in Silizium durch Niederenergieionenimplantation und Laserimpulsbestrahlung von Olaf Kretzer |
| title_short | Formierung flacher Dotierschichten in Silizium durch Niederenergieionenimplantation und Laserimpulsbestrahlung |
| title_sort | formierung flacher dotierschichten in silizium durch niederenergieionenimplantation und laserimpulsbestrahlung |
| topic | Silicium (DE-588)4077445-4 gnd Siliciumhalbleiter (DE-588)4274465-9 gnd Ionenimplantation (DE-588)4027606-5 gnd Laser (DE-588)4034610-9 gnd VLSI (DE-588)4117388-0 gnd Ausheilung (DE-588)4192968-8 gnd |
| topic_facet | Silicium Siliciumhalbleiter Ionenimplantation Laser VLSI Ausheilung Hochschulschrift |
| work_keys_str_mv | AT kretzerolaf formierungflacherdotierschichteninsiliziumdurchniederenergieionenimplantationundlaserimpulsbestrahlung |