Modulation-doped field-effect transistors:
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| ISBN: | 0879422556 0879422564 |
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| adam_text | Contents
Preface xi
Part 1: Introduction 1
The HEMT: A Superfast Transistor, H Morkoc; and P M Solomon (IEEE Spectrum, February 1984) 3
Part 2: GaAs MODFETs 11
Section 2 1: Principle of Modulation Doping and Improved Transport Properties
Electron Mobilities in Modulation-Doped Semiconductor Heterojunction Superlattices, R Dingle, H L Stürmer,
A C Gossard, and W Wiegmann (Applied Physics Letters, October 1978) 13
Improved Electron Mobility Higher than 106 cm2/Vs in Selectively Doped GaAs/ZV-AlGaAs Heterostructures Grown
by MBE, S Hiyamizu, J Saito, K Nanbu, and T Ishikawa (Japanese Journal of Applied Physics, October
1983) 16
Concentration of Electrons in Selectively Doped GaAlAs/GaAs Heterojunction and Its Dependence on Spacer-Layer
Thickness and Gate Electric Field, K Hirakawa, H Sakaki, and J Yoshino (Applied Physics Letters,
August 1984) 19
Section 2 2: Bandstructure, Energy Levels, and Carrier Properties
Electron Subband Structure in Selectively Doped n-Al^Ga, _,As/GaAs Heterostructures, E F Schubert and K Ploog
(IEEE Transactions on Electron Devices, September 1985) 22
Subbands and Charge Control in a Two-Dimensional Electron Gas Field-Effect Transistor, B Vinter (Applied
Physics Letters, February 1984) 28
Density of Two-Dimensional Electron Gas in Modulation-Doped Structure with Graded Interface, A A Grinberg and
M S Shur (Applied Physics Letters, September 1984) 31
Determination of the Conduction-Band Discontinuities of GaAs/ALGai _,As Interfaces by Capacitance-Voltage
Measurements, H Okumura, S Misawa, S Yoshida, and S Gonda (Applied Physics Letters, February
1985) 33
Determination of 2-D Electron-Gas Carrier Mobility in Short Gate-Length MODFET’s by Direct Elimination of
Parasitic Resistance Effects, S M Liu, M B Das, iV Kopp, and H Morkoc; (IEEE Electron Device
Letters, November 1985) 36
Gate-Voltage-Dependent Transport Measurements on Heterostructure Field-Effect Transistors, W Prost,
W Brockerhoff, K Heime, K Ploog, W Schlapp, G Weimann, and H Morkoc; (IEEE Transactions on
Electron Devices, May 1986) 39
Section 2 3: Principle of MODFET Operation
A New Field-Effect Transistor with Selectively Doped GaAs/n-Al^Gai ^As Heterojunctions, T Mimura,
S Hiyamizu, T Fujii, and K Nanbu (Japanese Journal of Applied Physics, May 1980) 43
Two-Dimensional Electron Gas MESFET Structure, D Delagebeaudeuf, P Delescluse, P Etienne,
M Laviron, J Chaplart, and N T Linh (Electronics Letters, August 1980) 46
Metal-(n) AlGaAs-GaAs Two-Dimensional Electron Gas FET, D Delagebeaudeuf and N T Linh (IEEE
Transactions on Electron Devices, June 1982) 48
Charge Control of the Heterojunction Two-Dimensional Electron Gas for MESFET Application, D Delagebeaudeuf
and N T Linh (IEEE Transactions on Electron Devices, July 1981) 54
Current-Voltage and Capacitance-Voltage Characteristics of Modulation-Doped Field-Effect Transistors, K Lee,
M S Shur, T J Drummond, and H Morkoc; (IEEE Transactions on Electron Devices, March 1983) 60
Current-Voltage Characteristics of an AlGaAs/GaAs Heterostructure FET for High Gate Voltages, M Hirano,
Y Takanashi, and T Sugeta (IEEE Electron Device Letters, November 1984) 66
Quasi-Fermi Level Bending in MODFET’s and Its Effect on FET Transfer Characteristics, F Ponse, W T
Masselink, and H Morkoc; (IEEE Transactions on Electron Devices, June 1985) 70
The Influence of Donor Neutralization on the Transfer Characteristics of MODFET’s at 77 K: Theory and Experiment,
W T Masselink, T J Drummond, J Klem, W Kopp, Y C Chang, F Ponse, and H Morkoc; (IEEE
Transactions on Electron Devices, March 1985) 77
v
Section 2 4: MODFET Parameters (Properties, Characteristics)
Optimisation of Modulation-Doped Heterostructures for TEGFET Operation at Room Temperature, H Dämbkes,
W Brockerhoff, K Heime, K Ploog, G Weimann, and W Schlapp (Electronics Letters, July 1984) 80
Threshold and Sheet Concentration Sensitivity of High Electron Mobility Transistors, S Tiwari (IEEE Transactions
on Electron Devices, July 1984) 83
The Role of Inefficient Charge Modulation in Limiting the Current-Gain Cutoff Frequency of the MODFET, M C
Foisy, P J Tasker, B Hughes, and L F Eastman (IEEE Transactions on Electron Devices, July 1988) 93
Bias Dependence of Capacitances in Modulation-Doped FET’s at 4 GHz, D Arnold, W Kopp, R Fischer, J Klem,
and H Morkoq (IEEE Electron Device Letters, April 1984) 100
Frequency Dependence of Source Access Resistance of Heterojunction Field-Effect Transistor, C Versnaeyen,
A Vanoverschelde, A Cappy, G Salmer, and M Schortgen (Electronics Letters, June 1985) 103
Nonlinear Parasitics in MODFET’s and MODFET I-V Characteristics, P Roblin, L Rice, S B Bibyk, and
H Morkoq (IEEE Transactions on Electron Devices, August 1988) 105
On the Low-Temperature Degradation of (AlGa)As/GaAs Modulation-Doped Field-Effect Transistors, A Kastalsky
and R A Kiehl (IEEE Transactions on Electron Devices, March 1986) 112
Analysis of Electron Trapping Location in Gated and Ungated Inverted-Structure HEMT’s, H Kinoshita,
M Akiyama, T Ishida, S Nishi, Y Sano, and K Kaminishi (IEEE Electron Device Letters, September
1985) 122
Analysis of MODFET Microwave Characteristics, P Roblin, S Kang, A Ketterson, and H Morkoq (IEEE
Transactions on Electron Devices, September 1987) 125
Section 2 5: Two-Dimensional Hole Gas and p-Channel MODFETs
Modulation-Doped Field-Effect Transistor Based on a Two-Dimensional Hole Gas, H L Stürmer, K Baldwin,
A C Gossard, and W Wiegmann (Applied Physics Letters, June 1984) 134
High-Transconductance p-Channel Modulation-Doped AlGaAs/GaAs Heterostructure FET’s, M Hirano, K Oe, and
F Yanagawa (IEEE Transactions on Electron Devices, May 1986) 137
Realization of n-Channel and p-Channel High-Mobility (Al,Ga)As/GaAs Heterostructure Insulating Gate FET’s on a
Planar Wafer Surface, N C Cirillo, Jr ,MS Shur, P J Void, J K Abrokwah, and O N Tufte (IEEE
Electron Device Letters, December 1985) 142
Device Characterization of p-Channel AlGaAs/GaAs MIS-Like Heterostructure FET’s, M Hirano, K Oe,
F Yanagawa, and K Tsubaki (IEEE Transactions on Electron Devices, December 1987) 145
Section 2 6: Modified MODFET Structures and New Concepts
Performance of a Quarter-Micrometer-Gate Ballistic Electron HEMT, Y Awano, M Kosugi, T Mimura, and
M Abe (IEEE Electron Device Letters, October 1987) 151
Design of Enhanced Schottky-Barrier AlGaAs/GaAs MODFET’s Using Highly Doped p+ Surface Layers, K L
Priddy, D R Kitchen, J A Grzyb, C W Litton, T S Henderson, C K Peng, W F Kopp, and
H Morkoq (IEEE Transactions on Electron Devices, February 1987) 154
Improved MODFET Performance Through Ion Implantation in the Gate Region, C S Lam and C G Eonstad
(IEEE Electron Device Letters, December 1987) 159
A Self-Aligned Gate Lightly Doped Drain (Al,Ga)As/GaAs MODFET, A I Akinwande, K L Tan, C H Chen,
and P J Void (IEEE Electron Device Letters, June 1988) 162
Properties of Selectively Doped Heterostructure Transistors Incorporating a Superlattice Donor Layer, C W Tu,
W L Jones, R F Kopf, L D Urbanek, and S S Pei (IEEE Electron Device Letters, September 1986) 165
Inverted GaAs/AlGaAs Modulation-Doped Field-Effect Transistors with Extremely High Transconductances, N C
Cirillo, Jr ,MS Shur, and J K Abrokwah (IEEE Electron Device Letters, February 1986) 168
An Analytical Approach to the Capacitance-Voltage Characteristics of Double-Heterojunction HEMT’s, J L
Cazaux, G I Ng, D Pavlidis, and H F Chau (IEEE Transactions on Electron Devices, August 1988) 172
Multiple-Channel GaAs/AlGaAs High Electron Mobility Transistors, N H Sheng, C P Lee, R T Chen, D L
Miller, and S J Lee (IEEE Electron Device Letters, June 1985) 180
Current-Voltage and Capacitance-Voltage Characteristics of Heterostructure Insulated-Gate Field-Effect Transistors,
J Baek, M S Shur, R R Daniels, D K Arch, J K Abrokwah, and O N Tufte (IEEE Transactions on
Electron Devices, August 1987) 184
Large Transconductance n+-Ge Gate AlGaAs/GaAs MISFET with Thin Gate Insulator, K Maezawa, T Mizutani,
K Arai, and F Yanagawa (IEEE Electron Device Letters, July 1986) 192
An Investigation of i-AlGaAs/n-GaAs Doped-Channel MIS-Like FET’s (DMT’s)—Properties and Performance
Potentialities, H Hida, A Okamoto, H Toyoshima, and K Ohata (IEEE Transactions on Electron
Devices, July 1987) 195
VI
Section 2 7: Material Growth, Material Properties, and Problems (Including Traps)
Molecular Beam Epitaxial Growth and Transport Properties of Modulation-Doped AlGaAs-GaAs Heterostructures,
G Weimann and W Schlapp (Applied Physics Letters, February 1985) 203
High-Throughput High-Yield Fabrication of Selectively Doped Al*Gai _*As/GaAs Heterostructures by Molecular
Beam Epitaxy, K Ploog and A Fischer (Applied Physics Letters, May 1986) 206
Modulation-Doped FET Threshold Voltage Uniformity of a High Throughput 3 Inch MBE System, J K Abrokwah,
N C Cirillo, Jr ,MJ Helix, and M Longerbone (Journal of Vacuum Science Technology B, April-June
1984) 209
AlGaAs/GaAs 2-DEG FET’s Fabricated from MO-CVD Wafers, Y Takanashi and N Kobayashi (IEEE Electron
Device Letters, March 1985) 213
Very High Quality Single and Multiple GaAs Quantum Wells Grown by Chemical Beam Epitaxy, W T Tsang and
R C Miller (Applied Physics Letters, May 1986) 216
Origin of “Residual” Persistent Photoconductivity in Selectively Doped GaAs/Al^Ga, As Heterojunctions, T N
Theis and S L Wright (Applied Physics Letters, May 1986) 219
A Detailed Investigation of the D-X Center and Other Trap Levels in GaAs-Al^Ga, _^As Modulation-Doped
Heterostructures Grown by Molecular-Beam Epitaxy, S Dhar, W P Hong, P K Bhattacharya,
Y Nashimoto, and F Y Juang (IEEE Transactions on Electron Devices, May 1986) 222
High Performance (AlAs/n-GaAs Superlattice)/GaAs 2DEGFETs with Stabilized Threshold Voltage, T Baba,
T Mizutani, M Ogawa, and K Ohata (Japanese Journal of Applied Physics, August 1984) 230
Interface States of Modulation-Doped AlGaAs/GaAs Heterostructures, S K Chung, Y Wu, K L Wang, N H
Sheng, C P Lee, and D L Miller (IEEE Transactions on Electron Devices, February 1987) 233
Generation-Recombination Noise in the Saturation Regime of MODFET Structures, S Kugier (IEEE Transactions
on Electron Devices, May 1988) 238
Section 2 8: Device Processing (Implantation, Annealing and Interdiffusion, Ohmic Contacts, and Etching)
Dose-Dependent Mixing of AlAs-GaAs Superlattices by Si Ion Implantation, T Venkatesan, S A Schwarz, D M
Hwang, R Bhat, M Koza, H W Yoon, P Mei, Y Arakawa, and A Yariv (Applied Physics Letters,
September 1986) 244
High-Performance AlGaAs/GaAs MODFET’s with Improved Ohmic Contacts, W L Jones and L F Eastman
(IEEE Transactions on Electron Devices, May 1986) 247
HEMT with Nonalloyed Ohmic Contacts Using n+-InGaAs Cap Layer, S Kuroda, N Harada, T Katakami, and
T Mimura (IEEE Electron Device Letters, September 1987) 252
As2-Ambient Activation and Alloyed-Ohmic-Contact Studies of Si+-Ion-Implanted Alo 3Gao 7As/GaAs
Modulation-Doped Structures, S D Mukherjee, P Zwicknagl, H Lee, L Rathbun, and L F Eastman
(Solid-State Electronics, 1986) 255
Selective Etching Characteristics of HF for Al/Jai-^As/GaAs, X S Wu, L A Coldren, and J L Merz
(Electronics Letters, June 1985) 262
Highly Selective Reactive Ion Etching Applied to the Fabrication of Low-Noise AlGaAs GaAs FET’s, J Vatus,
J Chevrier, P Delescluse, and J F Rochette (IEEE Transactions on Electron Devices, July 1986) 264
Part 3: Numerical Simulation of MODFETs 269
Modeling of MODFET’s, G Salmer, J Zimmermann, and R Fauquembergue (IEEE Transactions on
Microwave Theory and Techniques, July 1988) 271
Section 3 1: Analytical Descriptions and Models
The Influence of Device Physical Parameters on HEMT Large-Signal Characteristics, M Weiss and D Pavlidis
(IEEE Transactions on Microwave Theory and Techniques, February 1988) 288
A Model for the Current-Voltage Characteristics of MODFET’s, K Park and K D Kwack (IEEE Transactions on
Electron Devices, May 1986) 299
Two-Dimensional Charge-Control Model for MODFET’s, Y M Kim and P Roblin (IEEE Transactions on
Electron Devices, November 1986) 303
Model for Modulation Doped Field Effect Transistor, T J Drummond, H Morkoq, K Lee, and M Shur (IEEE
Electron Device Letters, November 1982) 311
An Analytical Expression for Fermi Level Versus Sheet Carrier Concentration for HEMT Modeling, S Kola, J M
Golio, and G N Maracas (IEEE Electron Device Letters, March 1988) 315
A Model for the Capacitance-Voltage Characteristics of MODFET’s, K Park, H B Kim, and K D Kwack (IEEE
Transactions on Electron Devices, December 1987) 318
vii
An Analytical DC Model for the Modulation-Doped Field-Effect Transistor, M L Majewski (IEEE Transactions on
Electron Devices, September 1987) 323
A Novel 2DEGFET Model Based on the Parabolic Velocity-Field Curve Approximation, H Hida, T Itoh, and
K Ohata (IEEE Transactions on Electron Devices, October 1986) 332
Section 3 2: Numerical Simulation and Analysis
Analysis of High Electron Mobility Transistors Based on a Two-Dimensional Numerical Model, J Yoshida and
M Kurata (IEEE Electron Device Letters, December 1984) 339
DC and Microwave Models for AlxGai As/GaAs High Electron Mobility Transistors, M H Weiler and Y Ayasli
(IEEE Transactions on Electron Devices, December 1984) 342
Scaling Properties of High Electron Mobility Transistors, I C Kizilyalli, K Hess, J L Larson, and D J Widiger
(IEEE Transactions on Electron Devices, October 1986) 350
Two-Dimensional Simulation of MODFET and GaAs Gate Heterojunction FET’s, JYF Tang (IEEE Transactions
on Electron Devices, September 1985) 356
A Novel Model of Two-Dimensional Electron Gas Field Effect Transistors, A Cappy, C Versnayen,
A Vanoverschelde, G Salmer, D Delagebeaudeuf, N T Link, and M Laviron (Record of the 4th IEEE
GaAs IC Symposium, 1982) 363
Aspect Ratio Phenomena in the High Electron Mobility Transistor, M Mouis, J F P6ne, P Hesto, and
R Castagne (Proceedings of the IEEE Cornell Conference, Advanced Concepts of High Speed
Semiconductor Devices and Circuits, 1985) 367
Section 3 3: Models for Circuit Simulation
Circuit Simulation Models for the High Electron Mobility Transistor, H R Yeager and R W Dutton (IEEE
Transactions on Electron Devices, May 1986) 376
An Accurate dc Model of 2-DEG FET for Implementation on a Circuit Simulator, H Hida, T Itoh, and K Ohata
(IEEE Electron Device Letters, June 1986) 386
GaAs/AlGaAs and InGaAs/AlGaAs MODFET Inverter Simulations, A A Ketterson and H Morkoq (IEEE
Transactions on Electron Devices, November 1986) 389
A New and Simple Model for GaAs Heterojunction FET Gate Characteristics, C H Chen, S M Baier, D K Arch,
and M S Shur (IEEE Transactions on Electron Devices, May 1988) 397
Characterization of Heterostructure Complementary MISFET Circuits Employing the New Gate Current Model,
S Fujita and T Mizutani (IEEE Transactions on Electron Devices, September 1987) 404
Simulation and Design Analysis of (AlGa)As/GaAs MODFET Integrated Circuits, C H Hyun, M S Shur, and N
C Cirillo, Jr (IEEE Transactions on Computer-Aided Design, April 1986) 412
Part 4: Impact of New Materials and Structures 421
Comparative Potential Performance of Si, GaAs, GalnAs, InAs Submicrometer-Gate FET’s, A Cappy, B Carnez,
R Fauquembergues, G Salmer, and E Constant (IEEE Transactions on Electron Devices, November
1980) 423
Section 4 1: GaAs on Silicon
High-Performance Self-Aligned Gate (Al,Ga)As/GaAs MODFET’s on MBE Layers Grown on (100) Silicon
Substrates, D K Arch, H Morkoq, P J Void, and M Longerbone (IEEE Electron Device Letters,
November 1986) 426
Properties of MODFET’s Grown on Si Substrates at DC and Microwave Frequencies, R J Fischer, W F Kopp,
J S Gedymin, and H Morkoq (IEEE Transactions on Electron Devices, October 1986) 429
Section 4 2: Strained Layer Structures on GaAs Substrate
An Ino 15Gao 85As/GaAs Pseudomorphic Single Quantum Well HEMT, J J Rosenberg, M Benlamri, P D
Kirchner, J M Woodall, and G D Pettit (IEEE Electron Device Letters, October 1985) 434
Characterization of InGaAs/AlGaAs Pseudomorphic Modulation-Doped Field-Effect Transistors, A A Ketterson,
W T Masselink, J S Gedymin, J Klem, C K Peng, W F Kopp, H Morkoq, and K R Gleason (IEEE
Transactions on Electron Devices, May 1986) 437
Microwave Performance of a Quarter-Micrometer Gate Low-Noise Pseudomorphic InGaAs/AlGaAs
Modulation-Doped Field Effect Transistor, T Henderson, M I Aksun, C K Peng, H Morkoq, P C
Chao, P M Smith, KHG Duh, and L F Lester (IEEE Electron Device Letters, December 1986) 444
Pulse-Doped AlGaAs/InGaAs Pseudomorphic MODFET’s, N Moll, M R Hueschen, and A Fischer-Colbrie
(IEEE Transactions on Electron Devices, July 1988) 447
viii
0 2-/tm Gate-Length Atomic-Planar Doped Pseudomorphic Alo 3Gao 7As/Ino 25Gao 75As MODFET’s with fT over 120
GHz, L D Nguyen, D C Radulescu, P J Tasker, W J Schaff, and L F Eastman (IEEE Electron
Device Letters, August 1988) 454
A Double-Heterojunction Doped-Channel Pseudomorphic Power HEMT with a Power Density of 0 85 W/mm at 55
GHz, P Saunier, R J Matyi, and K Bradshaw (IEEE Electron Device Letters, August 1988) 457
A 0 l-/im Gate Alo 5Ino 5As/Gao 5Ino 5As MODFET Fabricated on GaAs Substrates, G W Wang, Y K Chen, W J
Schaff, and L F Eastman (IEEE Transactions on Electron Devices, July 1988) 459
O I-/11T1 Gate-Length Pseudomorphic HEMT’s, P C Chao, R C Tiberio, KHG Duh, P M Smith, J M
Baliingall, L F Lester, B R Lee, A Jabra, and G G Gifford (IEEE Electron Device Letters, October
1987) 464
Comparisons of Microwave Performance Between Single-Gate and Dual-Gate MODFET’s, Y K Chen, G W
Wang, D, C Radulescu, and L F Eastman (IEEE Electron Device Letters, February 1988) 467
Quantum-Well p-Channel AlGaAs/InGaAs/GaAs Heterostructure Insulated-Gate Field-Effect Transistors with Very
High Transconductance, R R Daniels, P P Rüden, M Shur, D Grider, T E Nohava, and D K Arch
(IEEE Electron Device Letters, July 1988) 470
Section 4 3: Structures on InP Substrate
The Effect of InP Substrate Misorientation on GalnAs-AlInAs Interface and Alloy Quality, A S Brown, U K
Mishra, J A Henige, and M J Delaney (Journal of Applied Physics, October 1988) 473
Depletion Mode Modulation Doped Alo 48lno 52As-Gao 47Ino 53As Heterojunction Field Effect Transistors, C y Chen,
A Y Cho, K Y Cheng, T P Pearsall, P O’Connor, and P A Garbinski (IEEE Electron Device
Letters, June 1982) 478
700 mS/mm 2DEGFETs Fabricated from High Mobility MBE-Grown n-AlInAs/GalnAs Heterostructures, K Hirose,
K Ohata, T Mizutani, T Itoh, and M Ogawa (Record of the 12th International Symposium on GaAs
and Related Compounds, 1985) 482
High-Performance InAlAs/InGaAs HEMT’s and MESFET’s, A Fathimulla, J Abrahams, T Loughran, and
H Hier (IEEE Electron Device Letters, July 1988) 485
DC and Microwave Characteristics of InAlAs/InGaAs Single-Quantum-Well MODFET’s with GaAs Gate Barriers,
W P Hong and P Bhattacharya (IEEE Electron Device Letters, July 1988) 488
Gao 4Ino 6As/Alo 55Ino 45As Pseudomorphic Modulation-Doped Field-Effect Transistors, J M Kuo, T Y Chang, and
B Lalevic (IEEE Electron Device Letters, September 1987) 491
High-Performance Submicrometer AlInAs-GalnAs HEMT’s, U K Mishra, A S Brown, L M Jelloian, L H
Hacked, and M J Delaney (IEEE Electron Device Letters, January 1988) 494
Microwave Performance of InAlAs/InGaAs/InP MODFET’s, C K Peng, M I Aksun, A A Ketterson,
H Morkoq, and K R Gleason (IEEE Electron Device Letters, January 1987) 497
Current-Gain Cutoff Frequency Comparison of InGaAs HEMT’s, K Hikosaka, S Sasa, N Harada, and S Kuroda
(IEEE Electron Device Letters, May 1988) 500
Section 4 4: The Si/SiGe System
The n-Channel SiGe/Si Modulation-Doped Field-Effect Transistor, H Daembkes, H J Herzog, H Jorke,
H Kibbel, and E Kaspar (IEEE Transactions on Electron Devices, May 1986) 503
Enhancement- and Depletion-Mode p-Channel Ge^Sii-* Modulation-Doped FET’s, T P Pearsall and J C Bean
(IEEE Electron Device Letters, May 1986) 508
Author Index 511
Subject Index 515
Editor’s Biography 523
IX
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| isbn | 0879422556 0879422564 |
| language | Undetermined |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-012499445 |
| open_access_boolean | |
| publishDateSort | 0000 |
| publisher | IEEE Press |
| record_format | marc |
| spelling | Modulation-doped field-effect transistors ed. by Heinrich Daembkes New York IEEE Press txt rdacontent n rdamedia nc rdacarrier Bandzählung fingiert HEMT (DE-588)4211873-6 gnd rswk-swf HEMT (DE-588)4211873-6 s DE-604 Daembkes, Heinrich Sonstige oth HEBIS Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=012499445&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Modulation-doped field-effect transistors HEMT (DE-588)4211873-6 gnd |
| subject_GND | (DE-588)4211873-6 |
| title | Modulation-doped field-effect transistors |
| title_auth | Modulation-doped field-effect transistors |
| title_exact_search | Modulation-doped field-effect transistors |
| title_full | Modulation-doped field-effect transistors ed. by Heinrich Daembkes |
| title_fullStr | Modulation-doped field-effect transistors ed. by Heinrich Daembkes |
| title_full_unstemmed | Modulation-doped field-effect transistors ed. by Heinrich Daembkes |
| title_short | Modulation-doped field-effect transistors |
| title_sort | modulation doped field effect transistors |
| topic | HEMT (DE-588)4211873-6 gnd |
| topic_facet | HEMT |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=012499445&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT daembkesheinrich modulationdopedfieldeffecttransistors |