Proceedings of the Second International Symposium on Silicon Molecular Beam Epitaxy: [Oct. 20 - 23, 1987 in Honolulu, Hawaii]
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Pennington, NJ
1988
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| Schriftenreihe: | Electrochemical Society: Proceedings
88,8 |
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| Beschreibung: | X, 619 S. graph. Darst. |
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PROCEEDINGS OF TH^SECOND INTERNATIONALSYMPOSIUMON
SILICON MOLECULAR BEAM EPITAXY
EDITED BY
JOHN C. BEAN AT&T BELL LABORATORIES MURRAY HILL, NEW JERSEY
LEO J. SCHOWALTER GENERAL ELECTRIC CORPORATE RESEARCH AND DEVELOPMENT
SCHENECTADY, NEW YORK
UNIVERSITMTSRIBUOTHEK HF T RLR
.
TECHNISCHE
JNFORMATJOI GTALBLLOTHEK
ASSISTANT EDITORS
HIROSHI ISHIWARA
ERICH KASPER EVAN H. C. PARKER
TIB/UB HANNOVER 89 129 942 340
ELECTRONICS AND DIELECTRICS AND INSULATION DIVISIONS
PROCEEDINGS VOLUME 88-8
THE ELECTROCHEMICAL SOCIETY, INC., 10 SOUTH MAIN ST., PENNINGTON, NJ
08534-2896
IMAGE 2
TABLE OF CONTENTS
PAGE
OPPORTUNITIES IN DEVICES AND PHYSICS: T. C. MCGILL, 1
R. H. MILES, R. J. HAUENSTEIN AND 0. J, MARSH.
HETEROEPITAXY: GERMANIUM SILICIDE 13
SIGE/SII HIGH SPEED DEVICES: H. DAEMBKES. 15
GESI: OPTOELECTRONIC DEVICES: H. TEMKIN 28
RELAXATION PROCESSES IN SI/SI1_XGEX STRAINED LAYER 36 SUPERLATTICES - A
STUDY BY RAMAN. SPECTROSCOPY AND X-RAY DIFFRACTOMETRY: C. G. TUPPEN, C.
J. GIBBINGS, S. T. DAVEY, M. H. LYONS, M. HOCKLY AND M. A. G. HALLIWELL.
PHOTOLUMINESCENCE OF MBE GROWN SIXGEI-X FILMS: N. L. 48 ROWELL, J. M.
BARIBEAU AND D. C. HOUGHTON.
STRAIN ADJUSTMENT IN SI/SIGE SUPERLATTICES: H. -J. HERZOG, H. 58 JORKE,
E. KASPER AND S. MANTL.
BAND OFFSETS AT SI/S^^GE* HETEROJUNCTION INTERFACES 68 STUDIED WITH
X-RAY PHOTOEMISSIONI INFLUENCE OF STRAIN AND CRYSTAL ORIENTATION: W. -X.
NI, J. KNALL AND G. V. HANSSON.
MBE GROWTH OF GE^SII-X ON POROUS SILICON: C. H. CHERN, Y. C. 76 KAO, C.
W. NEIH, G. BAI, K. L. WANG AND M. -A. NICOLET.
GROWTH AND CHARACTERIZATION OF GE-GEJ_XSIX MULTILAYERS 85 GROWN ON SI
(100): R. M. OSTROM, F. G. ALLEN AND P. K. VASUDEV.
MBE GROWTH OF GE ON (100) SI: J, -M. BARIBEAU, D. C. HOUGHTON, 95 T, E.
JACKMAN, P. MAIGNE AND J. MCCAFFREY.
STRUCTURAL RELAXATION IN STRAINED-LAYER HETEROSTRUCTURES: 105 B. W.
DODSON AND J. Y. TSAO.
SILICON-GERMANIUM BASE HETEROJUNCTION. BIPOLAR TRANSISTORS 114 BY
MOLECULAR BEAM EPITAXY: S. S. IYER, G. L. PATTON, S. L. DELAGE, S.
T RWARI AND J. M. C. STORK.
V
IMAGE 3
PAGE
HETEROEPITAXY: INSULATORS 127
THE USE OF RAPID THERMAL ANNEALING TO IMPROVE SILICON- 129 BASED
HETEROEPITAXY: JULIA M. PHILLIPS AND L. PFEIFFER.
EPITAXIAL INSULATOR AND METAL HYBRIDS: LEO J. SEHOWALTER 140 AND F. W.
FATHAUER.
SURFACE PHYSICS IN SI MBE: F. J. HIMPSEL, J. F. MORAR AND 170
J. A. YARMOFF.
GROWTH OF GE AND GAAS FILMS ON ELECTRON-BEAM EXPOSED 182 CAFI/S I (111)
STRUCTURES: H. ISHIWARA, H. C. LEE, S. KANEMARU AND S. FURUKAWA.
THE DEPOSITION OF LITHIUM NIOBATE AND RELATED DIELECTRIC 191 OXIDES BY
MBE: AN INVESTIGATION OF THEIR COMPATIBILITY WITH SILICON: M.,PETRUCCI,
C. W. PITT, H. ROBINSON AND R. A. BETTS.
BINDING ENERGY SHIFTS OF ULTRA-THIN SI02 BY MOLECULAR 205 BEAM
DEPOSITION: Y. MIKATA, N. TSUCHIYA, T. USAMI, T. OHTA AND H. HIRANO.
HETEROEPITAXY: METALS 215
SI MBE AND ITSAPPLICATION TO NEW DEVICES: Y. SHIRAKI. 217 MODIFICATION
OF THE SCHOTKKY-BARRIER HEIGHT OF MBE-GROWN 228 COSIJ/SI (111) DIODES BY
THE USE OF SELECTIVE GA DOPING: R.
W. FATHAUER, T. L. LIN, P. J. GRUNTHANER, P. 0. ANDERSSON AND J.
MASERJIAN.
INTERFACIAL REACTION BETWEEN NI AND MBE GROWN SIGE 235
ALLOY: R. D. THOMPSON, K. N. TU, J. ANGILLELO, S. DELAGE AND S. S. IYER.
INITIAL GROWTH OF COBALT SILICIDE ON HEAVILY B-DOPED 243
SI(LLL)-(V3 X V^) AT ROOM TEMPERATURE: LI LUO, GARY SMITH, SHIN
HASHIMOTO AND W. M. GIBSON.
SI/COSIJ/SI STRUCTURES: PSEUDOMORPHISM, INTERFACE 247 STRUCTURES,
EPITAXIAL ORIENTATIONS AND THE CONTROL OF PINHOLES: R. T. TUNG, J. L.
BATSTONE AND S. M. YALISOVE.
VL
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PAGE
REDUCTION OF PINHOLE DENSITIES IN EPITAXIAL COSI2 FILMS: T. L. 259 LIN,
R. W. FATHAUER, P. J. GRUNTHANER AND C. D ANTERROCHES.
ORIGIN OF EXCESS CAPACITANCES AT EPITAXIAL SILICIDE CONTACTS . 266 J.
WERNER, A. F. J. LEVI, R. T. TUNG AND M. PINTO.
COSI2/SI SUPERSTRUCTURES FABRICATED BY A COMBINATION OF 274 MBE AND SPE:
H. VON KANEL, J. HENZ AND M. OSPELT. HETEROEPITAXY: POLAR SEMICONDUCTORS
283
DYNAMIC RHEED STUDIES DURING SI MBE AND ITS 285
APPLICATIONS TO HETEROEPITAXIAL GROWTH: T. SAKAMOTO, K. SAKAMOTO, G.
HASHIGUCHI, N. TAKAHASHI, S. NAGAO, K. KUNIYOSHI AND K. MIKI.
RELATIONSHIP BETWEEN SUBSTRATE CLEANING, SURFACE STRUCTURE 293 AND
NUCLEATION PHENOMENA IN HETEROEPITAXIAL GROWTH ON SI: R. HULL, J. C.
BEAN, R. LEIBENGUTH, S. M. KOCH AND J. S. HARRIS, JR.
EPITAXIAL GAAS ON CAFG ON SI: L. J. SCHOWALTER, SHIN HASHIMOTO, 301 G.
A. SMITH, N. LEWIS, E. L. HALL AND P. W. SULLIVAN.
GROWTH STUDY ON SI (001) VICINAL SURFACES USING RHEED: K. 307 SAKAMOTO,
T. SAKAMOTO, S. NAGAO, G. HASHIGUCHI, K. KUNIYOSHI AND N. TAKASHI.
HETEROEPITAXY AND SEEDED LATERAL OVERGROWTH ON SILICON 313 SUBSTRATES BY
LIQUIDPHASE EPITAXY: M. I. ALONSO, H. -P. TRAH, H. CERVA, H. P. STRUNK
AND E. BAUSER.
PROGRESS IN COMPOUND-SEMICONDUCTOR-ON-SILICON-HETEROEPITAXY 321 WITH
FLUORIDE BUFFER LAYERS: H. ZOGG, S. BLUNIER AND J. MASEK.
HOMOEPITAXY 331
STATUS OF THE SI-MBE PROCESS: O. J. MARSH. 333
REDUCTION OF SILICON MBE TO REAL WORLD INDUSTRIAL PRACTICE; 347 E. H. C.
PARKER AND T. E. WHAIL.
PHOTOLUMINESCENCE ANALYSIS OF MBE SILICON: B. HAMILTON, E. C. 355
SIDEBOTHAM, A. R. PEAKER, E. H. C. PARKER, G. PATEL AND T. E. WHALL.
VIL
IMAGE 5
PAGE
THE EFFECTS OF SUBSTRATE TEMPERATURE ON DEEP STATES IN 360 MBE SILICON:
E. C. SIDEBOTHAM, A. R. PEAKER, B. HAMILTON, M. HOPKINSON, R. HOUGHTON,
G. PATEL, T. E. WHALL AND E. H. C. PARKER.
A FEASIBILITY STUDY INTO GAS SOURCE SI MBE: C. G. TUPPEN, 368 C. J.
GIBBINGS, G. J. DAVIES, J. E. BAGGOTT, P. R. BALDWIN, H. M.
FREY AND I. M. WATTS.
LOW TEMPERATURE SUBSTRATE CLEANING TECHNOLOGY FOR SI 375 MBE: P. J.
GRUNTHANER, F. J. GRUNTHANER, R. W. FATHAUER, T. L. LIN, F. D.
SCHOWENGERDT, B. PATE AND J. M. MAZUR.
RECOMBINATION - GENERATION KINETICS IN MBE SILICON: A. R. 392 PEAKER, E.
C. SIDEBOTHAM, B. HAMILTON AND M. PAWLIK.
AN ELECTROCHEMICAL ANALYSIS OF DEFECTS IN EPITAXIAL SI AND 402
SI/SII_XGEX SUPERLATTICES PRODUCED BY MOLECULAR BEAM EPITAXY: C. G.
TUPPEN, C. J. GIBBINGS AND C. L. AYLING.
DOPING BY SECONDARY IMPLANTATION-EXPERIMENT AND MODEL: 417 S. S. IYER
AND S. L. DELAGE.
BORON DOPING FOR SI MOLECULAR BEAM EPITAXY USING HB02: 430 T. TATSUMI,
H. HIRAYAMA AND N. AIZAKI.
MONTE CARLO SIMULATIONS OFMOLECULAR BEAM EPITAXY ON SI 438 (001)
SURFACES: S. A. BARNETT, A. ROCKETT AND R. KASPI.
IMPROVED DESIGN STUDY FOR DOPING BY SECONDARY IMPLANTATION: 450 H.
JORKE, A. CASEL, H. KIBBEL AND H. -J. HERZOG.
UNINTENTIONAL IMPURITIES IN SILICON LAYERS GROWN BY 459 MOLECULAR BEAM
EPITAXY: S. L. DELAGE, S. S. IYER AND G. J. SCILLA.
INDIUM INCORPORATION IN MBE SI(100) LAYERS USING LOW- 470 ENERGY
SECONDARY AND PRIMARY ION IMPLANTATION DURING GROWTH: J. KNALL, M. -A.
HASAN, J. -E. SUNDGREN, A. ROCKETT, L. MARKERT AND J. E. GREENE.
ULTRAVIOLET LASER ASSISTED SILICON MOLECULAR BEAM EPITAXY: 484 S. S.RHEE
AND K. L. WANG.
VILI
IMAGE 6
PAGE
LIGHT SCATTERING FROM DEFECTS FORMED DURING SILICON MBE: 492 A. J.
PIDDUCK, D. J. ROBBINS, A. G. CULLIS, D. B. GASSON AND J. L. GLASPER.
REFLECTION HIGH ENERGY ELECTRON DIFFRACTION OBSERVATION OF 501 SUBSTRATE
CLEANING DURING SI MOLECULAR BEAM EPITAXY: C. F. HUANG, R. P. G.
KARUNASIRI, K. L. WANG AND T. W. KANG.
ELECTRONIC TRANSPORT AND DEVICE APPLICATIONS 513
DELTA-DOPED MESFET WITH MBE-GROWN: H. -P. ZEINDL, B. 515 TEMPEL, B.
BULLEMER AND I. EISELE.
SILICON MODULATION DOPED SUPERLATTICES GROWN BY SOLID 526 PHASE EPITAXY:
E. D. AHLERS AND F. G. ALLEN.
THE SYNTHESIS OF CAMEL DIODES BY SI - MBE: D. SMITH, 538
M. HOPKINSON, R. F. HOUGHTON, T. E. WHALL, E. H. C. PARKER AND A.
GUNDLACH
SYNTHESIS AND CHARACTERIZATION OF DOPING SUPERLATTICES 545 FOR STUDIES
OF ELECTRICAL TRANSPORT: R. BISWAS, M. HOPKINSON, R. HOUGHTON, D. W.
SMITH, E. H. C. PARKER AND T. E. WHALL.
EFFECTIVENESS OF SILICON LOW PRESSURE VAPOUR PHASE EPITAXY 549 FOR
NARROW, HIGHLY DOPED MULTILAYERS: L. VESCAN, U. BREUER AND H. BENEKING.
APPARATUS 559
ION BEAM DOPING OF MBE SILICON BY AS+: D. C. HOUGHTON, M. 561 W.
DENHOFF, T. E. JACKMAN, M. L. SWANSON AND N. PARIKH.
DUAL ION IMPLANTATION SYSTEM FOR BIPOLAR DOPING OF SILICON 574 MOLECULAR
BEAM EPITAXY: J. C. BEAN, M. CERULLO AND R. E. LEIBENGUTH.
AUTOMATION OF A 125MM SI MBE PROCESSING SYSTEM - CONCEPTS 582 AND
IMPLEMENTATION: R. D. THOMPSON, S. S. IYER AND S. L. DELAGE.
AN INDUSTRIAL, SINGLE SLICE SI-MBE APPARATUS: E. KASPER, H. 590 KIBBEL
AND F. SCHAFFLER.
IX
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PAGE
A PROTOTYPE MULTI-WAFER SILICON MOLECULAR BEAM EPITAXY 603 SYSTEM:
LESSONS LEARNED (PART I): J. C. BEAN, R. E. LEIBENGUTH.
INDEX FI17
X
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| spelling | International Symposium on Silicon Molecular Beam Epitaxy 2 1987 Honolulu, Hawaii Verfasser (DE-588)5212467-8 aut Proceedings of the Second International Symposium on Silicon Molecular Beam Epitaxy [Oct. 20 - 23, 1987 in Honolulu, Hawaii] ed. by John C. Bean ... Electronics and ... Divisions Silicon molecular beam epitaxy Pennington, NJ 1988 X, 619 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Electrochemical Society: Proceedings 88,8 Molekularstrahlepitaxie (DE-588)4170399-6 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 1987 Honolulu Hawaii gnd-content Molekularstrahlepitaxie (DE-588)4170399-6 s DE-604 Bean, John C. 1950- Sonstige (DE-588)17272726X oth Electrochemical Society Electronics Division Sonstige (DE-588)64574-6 oth Electrochemical Society: Proceedings 88,8 (DE-604)BV001900941 88,8 GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=006135523&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Proceedings of the Second International Symposium on Silicon Molecular Beam Epitaxy [Oct. 20 - 23, 1987 in Honolulu, Hawaii] Electrochemical Society: Proceedings Molekularstrahlepitaxie (DE-588)4170399-6 gnd |
| subject_GND | (DE-588)4170399-6 (DE-588)1071861417 |
| title | Proceedings of the Second International Symposium on Silicon Molecular Beam Epitaxy [Oct. 20 - 23, 1987 in Honolulu, Hawaii] |
| title_alt | Silicon molecular beam epitaxy |
| title_auth | Proceedings of the Second International Symposium on Silicon Molecular Beam Epitaxy [Oct. 20 - 23, 1987 in Honolulu, Hawaii] |
| title_exact_search | Proceedings of the Second International Symposium on Silicon Molecular Beam Epitaxy [Oct. 20 - 23, 1987 in Honolulu, Hawaii] |
| title_full | Proceedings of the Second International Symposium on Silicon Molecular Beam Epitaxy [Oct. 20 - 23, 1987 in Honolulu, Hawaii] ed. by John C. Bean ... Electronics and ... Divisions |
| title_fullStr | Proceedings of the Second International Symposium on Silicon Molecular Beam Epitaxy [Oct. 20 - 23, 1987 in Honolulu, Hawaii] ed. by John C. Bean ... Electronics and ... Divisions |
| title_full_unstemmed | Proceedings of the Second International Symposium on Silicon Molecular Beam Epitaxy [Oct. 20 - 23, 1987 in Honolulu, Hawaii] ed. by John C. Bean ... Electronics and ... Divisions |
| title_short | Proceedings of the Second International Symposium on Silicon Molecular Beam Epitaxy |
| title_sort | proceedings of the second international symposium on silicon molecular beam epitaxy oct 20 23 1987 in honolulu hawaii |
| title_sub | [Oct. 20 - 23, 1987 in Honolulu, Hawaii] |
| topic | Molekularstrahlepitaxie (DE-588)4170399-6 gnd |
| topic_facet | Molekularstrahlepitaxie Konferenzschrift 1987 Honolulu Hawaii |
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