Fundamental physics of amorphous semiconductors: proceedings of the Kyoto Summer Institute, Kyoto, Japan, Sept. 8 - 11, 1980
Gespeichert in:
| Weitere Verfasser: | |
|---|---|
| Format: | Tagungsbericht Buch |
| Sprache: | English |
| Veröffentlicht: |
Berlin u.a.
Springer
1981
|
| Schriftenreihe: | Springer series in solid-state sciences
25 |
| Schlagworte: | |
| Beschreibung: | VIII, 181 S. graph. Darst. |
| ISBN: | 0387106340 3540106340 |
Internformat
MARC
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| 245 | 1 | 0 | |a Fundamental physics of amorphous semiconductors |b proceedings of the Kyoto Summer Institute, Kyoto, Japan, Sept. 8 - 11, 1980 |c ed.: F. Yonezawa |
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| 300 | |a VIII, 181 S. |b graph. Darst. | ||
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Datensatz im Suchindex
| _version_ | 1804123665988583424 |
|---|---|
| any_adam_object | |
| author2 | Yonezawa, Fumiko |
| author2_role | edt |
| author2_variant | f y fy |
| author_facet | Yonezawa, Fumiko |
| building | Verbundindex |
| bvnumber | BV009223144 |
| classification_rvk | UP 1090 UP 3100 UP 3160 |
| ctrlnum | (OCoLC)310857415 (DE-599)BVBBV009223144 |
| discipline | Physik |
| format | Conference Proceeding Book |
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| genre | (DE-588)1071861417 Konferenzschrift 1980 Kioto gnd-content |
| genre_facet | Konferenzschrift 1980 Kioto |
| id | DE-604.BV009223144 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T17:33:23Z |
| institution | BVB |
| institution_GND | (DE-588)2066851-X |
| isbn | 0387106340 3540106340 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-006132546 |
| oclc_num | 310857415 |
| open_access_boolean | |
| owner | DE-29T DE-91 DE-BY-TUM DE-384 DE-355 DE-BY-UBR DE-19 DE-BY-UBM DE-83 DE-188 |
| owner_facet | DE-29T DE-91 DE-BY-TUM DE-384 DE-355 DE-BY-UBR DE-19 DE-BY-UBM DE-83 DE-188 |
| physical | VIII, 181 S. graph. Darst. |
| publishDate | 1981 |
| publishDateSearch | 1981 |
| publishDateSort | 1981 |
| publisher | Springer |
| record_format | marc |
| series | Springer series in solid-state sciences |
| series2 | Springer series in solid-state sciences |
| spelling | Fundamental physics of amorphous semiconductors proceedings of the Kyoto Summer Institute, Kyoto, Japan, Sept. 8 - 11, 1980 ed.: F. Yonezawa Berlin u.a. Springer 1981 VIII, 181 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Springer series in solid-state sciences 25 Amorpher Halbleiter (DE-588)4001756-4 gnd rswk-swf Elektronische Eigenschaft (DE-588)4235053-0 gnd rswk-swf Halbleiteroberfläche (DE-588)4137418-6 gnd rswk-swf Verbindungshalbleiter (DE-588)4062623-4 gnd rswk-swf Konferenz (DE-588)4032055-8 gnd rswk-swf Ordnungszustand (DE-588)4249805-3 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 1980 Kioto gnd-content Amorpher Halbleiter (DE-588)4001756-4 s DE-604 Ordnungszustand (DE-588)4249805-3 s 1\p DE-604 Halbleiteroberfläche (DE-588)4137418-6 s 2\p DE-604 Verbindungshalbleiter (DE-588)4062623-4 s 3\p DE-604 Konferenz (DE-588)4032055-8 s 4\p DE-604 Elektronische Eigenschaft (DE-588)4235053-0 s 5\p DE-604 Yonezawa, Fumiko edt Kyōto Summer Institute 3 1980 Kyōto Sonstige (DE-588)2066851-X oth Erscheint auch als Online-Ausgabe 978-3-642-81604-8 Springer series in solid-state sciences 25 (DE-604)BV000016582 25 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 2\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 3\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 4\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 5\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Fundamental physics of amorphous semiconductors proceedings of the Kyoto Summer Institute, Kyoto, Japan, Sept. 8 - 11, 1980 Springer series in solid-state sciences Amorpher Halbleiter (DE-588)4001756-4 gnd Elektronische Eigenschaft (DE-588)4235053-0 gnd Halbleiteroberfläche (DE-588)4137418-6 gnd Verbindungshalbleiter (DE-588)4062623-4 gnd Konferenz (DE-588)4032055-8 gnd Ordnungszustand (DE-588)4249805-3 gnd |
| subject_GND | (DE-588)4001756-4 (DE-588)4235053-0 (DE-588)4137418-6 (DE-588)4062623-4 (DE-588)4032055-8 (DE-588)4249805-3 (DE-588)1071861417 |
| title | Fundamental physics of amorphous semiconductors proceedings of the Kyoto Summer Institute, Kyoto, Japan, Sept. 8 - 11, 1980 |
| title_auth | Fundamental physics of amorphous semiconductors proceedings of the Kyoto Summer Institute, Kyoto, Japan, Sept. 8 - 11, 1980 |
| title_exact_search | Fundamental physics of amorphous semiconductors proceedings of the Kyoto Summer Institute, Kyoto, Japan, Sept. 8 - 11, 1980 |
| title_full | Fundamental physics of amorphous semiconductors proceedings of the Kyoto Summer Institute, Kyoto, Japan, Sept. 8 - 11, 1980 ed.: F. Yonezawa |
| title_fullStr | Fundamental physics of amorphous semiconductors proceedings of the Kyoto Summer Institute, Kyoto, Japan, Sept. 8 - 11, 1980 ed.: F. Yonezawa |
| title_full_unstemmed | Fundamental physics of amorphous semiconductors proceedings of the Kyoto Summer Institute, Kyoto, Japan, Sept. 8 - 11, 1980 ed.: F. Yonezawa |
| title_short | Fundamental physics of amorphous semiconductors |
| title_sort | fundamental physics of amorphous semiconductors proceedings of the kyoto summer institute kyoto japan sept 8 11 1980 |
| title_sub | proceedings of the Kyoto Summer Institute, Kyoto, Japan, Sept. 8 - 11, 1980 |
| topic | Amorpher Halbleiter (DE-588)4001756-4 gnd Elektronische Eigenschaft (DE-588)4235053-0 gnd Halbleiteroberfläche (DE-588)4137418-6 gnd Verbindungshalbleiter (DE-588)4062623-4 gnd Konferenz (DE-588)4032055-8 gnd Ordnungszustand (DE-588)4249805-3 gnd |
| topic_facet | Amorpher Halbleiter Elektronische Eigenschaft Halbleiteroberfläche Verbindungshalbleiter Konferenz Ordnungszustand Konferenzschrift 1980 Kioto |
| volume_link | (DE-604)BV000016582 |
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