Ion implantation and beam processing:
Gespeichert in:
| Format: | Buch |
|---|---|
| Sprache: | English |
| Veröffentlicht: |
Sidney u.a.
Acad. Pr.
1984
|
| Schlagworte: | |
| Beschreibung: | XI, 419 S. Ill., graph. Darst. |
| ISBN: | 0127569804 |
Internformat
MARC
| LEADER | 00000nam a2200000 c 4500 | ||
|---|---|---|---|
| 001 | BV009218554 | ||
| 003 | DE-604 | ||
| 005 | 00000000000000.0 | ||
| 007 | t | ||
| 008 | 940313s1984 ad|| |||| 00||| eng d | ||
| 020 | |a 0127569804 |9 0-12-756980-4 | ||
| 035 | |a (OCoLC)10958087 | ||
| 035 | |a (DE-599)BVBBV009218554 | ||
| 040 | |a DE-604 |b ger |e rakddb | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-29T | ||
| 050 | 0 | |a QC702.7.I55 | |
| 082 | 0 | |a 621.3815/2 |2 19 | |
| 084 | |a UP 3000 |0 (DE-625)146369: |2 rvk | ||
| 245 | 1 | 0 | |a Ion implantation and beam processing |c Hrsg. von James S. Williams* |
| 264 | 1 | |a Sidney u.a. |b Acad. Pr. |c 1984 | |
| 300 | |a XI, 419 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 650 | 4 | |a Bombardement ionique | |
| 650 | 4 | |a Faisceaux électroniques | |
| 650 | 4 | |a Ions - Implantation | |
| 650 | 4 | |a Semiconducteurs - Dopage | |
| 650 | 4 | |a Electron beams | |
| 650 | 4 | |a Ion bombardment | |
| 650 | 4 | |a Ion implantation | |
| 650 | 4 | |a Semiconductor doping | |
| 650 | 0 | 7 | |a Halbleiter |0 (DE-588)4022993-2 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Ionenimplantation |0 (DE-588)4027606-5 |2 gnd |9 rswk-swf |
| 689 | 0 | 0 | |a Halbleiter |0 (DE-588)4022993-2 |D s |
| 689 | 0 | 1 | |a Ionenimplantation |0 (DE-588)4027606-5 |D s |
| 689 | 0 | |5 DE-604 | |
| 700 | 1 | |a Williams, James S. |e Sonstige |4 oth | |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-006128475 | ||
Datensatz im Suchindex
| _version_ | 1804123660788695040 |
|---|---|
| any_adam_object | |
| building | Verbundindex |
| bvnumber | BV009218554 |
| callnumber-first | Q - Science |
| callnumber-label | QC702 |
| callnumber-raw | QC702.7.I55 |
| callnumber-search | QC702.7.I55 |
| callnumber-sort | QC 3702.7 I55 |
| callnumber-subject | QC - Physics |
| classification_rvk | UP 3000 |
| ctrlnum | (OCoLC)10958087 (DE-599)BVBBV009218554 |
| dewey-full | 621.3815/2 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.3815/2 |
| dewey-search | 621.3815/2 |
| dewey-sort | 3621.3815 12 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Book |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01377nam a2200445 c 4500</leader><controlfield tag="001">BV009218554</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">00000000000000.0</controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">940313s1984 ad|| |||| 00||| eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">0127569804</subfield><subfield code="9">0-12-756980-4</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)10958087</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV009218554</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakddb</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-29T</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">QC702.7.I55</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">621.3815/2</subfield><subfield code="2">19</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">UP 3000</subfield><subfield code="0">(DE-625)146369:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Ion implantation and beam processing</subfield><subfield code="c">Hrsg. von James S. Williams*</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Sidney u.a.</subfield><subfield code="b">Acad. Pr.</subfield><subfield code="c">1984</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">XI, 419 S.</subfield><subfield code="b">Ill., graph. Darst.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Bombardement ionique</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Faisceaux électroniques</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Ions - Implantation</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Semiconducteurs - Dopage</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Electron beams</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Ion bombardment</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Ion implantation</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Semiconductor doping</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleiter</subfield><subfield code="0">(DE-588)4022993-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Ionenimplantation</subfield><subfield code="0">(DE-588)4027606-5</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Halbleiter</subfield><subfield code="0">(DE-588)4022993-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Ionenimplantation</subfield><subfield code="0">(DE-588)4027606-5</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Williams, James S.</subfield><subfield code="e">Sonstige</subfield><subfield code="4">oth</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-006128475</subfield></datafield></record></collection> |
| id | DE-604.BV009218554 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T17:33:18Z |
| institution | BVB |
| isbn | 0127569804 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-006128475 |
| oclc_num | 10958087 |
| open_access_boolean | |
| owner | DE-29T |
| owner_facet | DE-29T |
| physical | XI, 419 S. Ill., graph. Darst. |
| publishDate | 1984 |
| publishDateSearch | 1984 |
| publishDateSort | 1984 |
| publisher | Acad. Pr. |
| record_format | marc |
| spelling | Ion implantation and beam processing Hrsg. von James S. Williams* Sidney u.a. Acad. Pr. 1984 XI, 419 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Bombardement ionique Faisceaux électroniques Ions - Implantation Semiconducteurs - Dopage Electron beams Ion bombardment Ion implantation Semiconductor doping Halbleiter (DE-588)4022993-2 gnd rswk-swf Ionenimplantation (DE-588)4027606-5 gnd rswk-swf Halbleiter (DE-588)4022993-2 s Ionenimplantation (DE-588)4027606-5 s DE-604 Williams, James S. Sonstige oth |
| spellingShingle | Ion implantation and beam processing Bombardement ionique Faisceaux électroniques Ions - Implantation Semiconducteurs - Dopage Electron beams Ion bombardment Ion implantation Semiconductor doping Halbleiter (DE-588)4022993-2 gnd Ionenimplantation (DE-588)4027606-5 gnd |
| subject_GND | (DE-588)4022993-2 (DE-588)4027606-5 |
| title | Ion implantation and beam processing |
| title_auth | Ion implantation and beam processing |
| title_exact_search | Ion implantation and beam processing |
| title_full | Ion implantation and beam processing Hrsg. von James S. Williams* |
| title_fullStr | Ion implantation and beam processing Hrsg. von James S. Williams* |
| title_full_unstemmed | Ion implantation and beam processing Hrsg. von James S. Williams* |
| title_short | Ion implantation and beam processing |
| title_sort | ion implantation and beam processing |
| topic | Bombardement ionique Faisceaux électroniques Ions - Implantation Semiconducteurs - Dopage Electron beams Ion bombardment Ion implantation Semiconductor doping Halbleiter (DE-588)4022993-2 gnd Ionenimplantation (DE-588)4027606-5 gnd |
| topic_facet | Bombardement ionique Faisceaux électroniques Ions - Implantation Semiconducteurs - Dopage Electron beams Ion bombardment Ion implantation Semiconductor doping Halbleiter Ionenimplantation |
| work_keys_str_mv | AT williamsjamess ionimplantationandbeamprocessing |