Physical properties of III - V semiconductor compounds: InP, InAs, GaAs, GaP, InGaAs, and InGaAsP
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
New York, NY [u.a.]
Wiley
1992
|
| Schlagworte: | |
| Beschreibung: | XVIII, 318 S. graph. Darst. |
| ISBN: | 9780471573296 0471573299 |
Internformat
MARC
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| 100 | 1 | |a Adachi, Sadao |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Physical properties of III - V semiconductor compounds |b InP, InAs, GaAs, GaP, InGaAs, and InGaAsP |c Sadao Adachi |
| 264 | 1 | |a New York, NY [u.a.] |b Wiley |c 1992 | |
| 300 | |a XVIII, 318 S. |b graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 650 | 4 | |a Gallium arsenide semiconductors | |
| 650 | 4 | |a Indium alloys | |
| 650 | 4 | |a Indium phosphide | |
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Datensatz im Suchindex
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| author | Adachi, Sadao |
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| callnumber-label | QC611 |
| callnumber-raw | QC611.8.G3 |
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| callnumber-sort | QC 3611.8 G3 |
| callnumber-subject | QC - Physics |
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| dewey-hundreds | 500 - Natural sciences and mathematics |
| dewey-ones | 537 - Electricity and electronics |
| dewey-raw | 537.6/226 |
| dewey-search | 537.6/226 |
| dewey-sort | 3537.6 3226 |
| dewey-tens | 530 - Physics |
| discipline | Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Book |
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| id | DE-604.BV009197896 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T17:32:54Z |
| institution | BVB |
| isbn | 9780471573296 0471573299 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-006110871 |
| oclc_num | 25508858 |
| open_access_boolean | |
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| owner_facet | DE-91 DE-BY-TUM DE-29T DE-703 DE-706 DE-83 DE-92 DE-11 DE-20 |
| physical | XVIII, 318 S. graph. Darst. |
| publishDate | 1992 |
| publishDateSearch | 1992 |
| publishDateSort | 1992 |
| publisher | Wiley |
| record_format | marc |
| spelling | Adachi, Sadao Verfasser aut Physical properties of III - V semiconductor compounds InP, InAs, GaAs, GaP, InGaAs, and InGaAsP Sadao Adachi New York, NY [u.a.] Wiley 1992 XVIII, 318 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Gallium arsenide semiconductors Indium alloys Indium phosphide Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd rswk-swf Drei-Fünf-Halbleiter (DE-588)4150649-2 s DE-604 |
| spellingShingle | Adachi, Sadao Physical properties of III - V semiconductor compounds InP, InAs, GaAs, GaP, InGaAs, and InGaAsP Gallium arsenide semiconductors Indium alloys Indium phosphide Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd |
| subject_GND | (DE-588)4150649-2 |
| title | Physical properties of III - V semiconductor compounds InP, InAs, GaAs, GaP, InGaAs, and InGaAsP |
| title_auth | Physical properties of III - V semiconductor compounds InP, InAs, GaAs, GaP, InGaAs, and InGaAsP |
| title_exact_search | Physical properties of III - V semiconductor compounds InP, InAs, GaAs, GaP, InGaAs, and InGaAsP |
| title_full | Physical properties of III - V semiconductor compounds InP, InAs, GaAs, GaP, InGaAs, and InGaAsP Sadao Adachi |
| title_fullStr | Physical properties of III - V semiconductor compounds InP, InAs, GaAs, GaP, InGaAs, and InGaAsP Sadao Adachi |
| title_full_unstemmed | Physical properties of III - V semiconductor compounds InP, InAs, GaAs, GaP, InGaAs, and InGaAsP Sadao Adachi |
| title_short | Physical properties of III - V semiconductor compounds |
| title_sort | physical properties of iii v semiconductor compounds inp inas gaas gap ingaas and ingaasp |
| title_sub | InP, InAs, GaAs, GaP, InGaAs, and InGaAsP |
| topic | Gallium arsenide semiconductors Indium alloys Indium phosphide Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd |
| topic_facet | Gallium arsenide semiconductors Indium alloys Indium phosphide Drei-Fünf-Halbleiter |
| work_keys_str_mv | AT adachisadao physicalpropertiesofiiivsemiconductorcompoundsinpinasgaasgapingaasandingaasp |