Amorphous and crystalline silicon carbide IV: proceedings of the 4th international conference, Santa Clara, CA, October 9 - 11, 1991
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Berlin [u.a.]
Springer
1992
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| Schriftenreihe: | Springer proceedings in physics
71 |
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| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | XII, 432 S. Ill., graph. Darst. |
| ISBN: | 3540556877 0387556877 |
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Datensatz im Suchindex
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| adam_text | *. Y YANG M. M. RAHMAN G. L. HARRIS (EDS.) AMORPHOUS AND CRYSTALLINE
SILICON CARBIDE IV PROCEEDINGS OF THE 4TH INTERNATIONAL CONFERENCE,
SANTA CLARA, CA, OCTOBER 9-11, 1991 WITH 336 FIGURES SPRINGER-VERLAG
BERLIN HEIDELBERG NEW YORK LONDON PARIS TOKYO HONG KONG BARCELONA
BUDAPEST CONTENTS PART I GROWTH OF CRYSTALLINE SILICON CARBIDE RECENT
PROGRESS IN EPITAXIAL GROWTH OF SIC BY H. MATSUNAMI (WITH 7 FIGURES) 3
SII_J,C Y ALLOYS - EXTENDING SI-BASED HETEROSTRUCTURE ENGINEERING BY
S.S. IYER, K. EBERL, M.S. GOORSKY, J.C. TSANG, F.K. LEGOUES, F. CARDONE,
AND B.A. EK (WITH 8 FIGURES) 13 INVESTIGATION OF THE GROWTH OF 3C-SIC
AND 6H-SIC FILMS ON LOW-TILT-ANGLE VICINAL (0001) 6H-SIC WAFERS BY J.A.
POWELL, DJ. LARKIN, J.B. PETIT, AND J.H. EDGAR (WITH 4 FIGURES) 23 LOW
TEMPERATURE HOMOEPITAXIAL GROWTH OF 6H-SIC BY VPE METHOD BY T. KIMOTO,
H. NISHINO, A. YAMASHITA, W.S. YOO, AND H. MATSUNAMI (WITH 4 FIGURES) 31
HETEROEPITAXIAL GROWTH OF 3C-SIC BY LPCVD WITH ALTERNATE GAS SUPPLY BY
H. NAGASAWA AND Y. YAMAGUCHI (WITH 10 FIGURES) 40 MECHANISMS IN THE LOW
PRESSURE GROWTH OF SIC-ON-SI BY RTCVD BY A.J. STECKL AND J.P. LI (WITH 5
FIGURES) 49 EFFECTS OF CH 3 C1 GAS ON HETEROEPITAXIAL GROWTH OF /3-SIC
ON SI(LLL) BY CHEMICAL VAPOR DEPOSITION BY K. IKOMA, M. YAMANAKA, H.
YAMAGUCHI, AND Y. SHICHI (WITH 9 FIGURES) 60 GROWTH SIMULATION OF SIC
POLYTYPES AND APPLICATION TO DPB-FREE 3C-SIC ON ALPHA-SIC SUBSTRATES BY
W.S. YOO AND H. MATSUNAMI (WITH 7 FIGURES) 66 EPITAXIAL GROWTH OF CUBIC
SIC USING VARIOUS ALKYL-SILICON COMPOUNDS BY CHEMICAL VAPOR DEPOSITION
BY K. TAKAHASHI, S. NISHINO, J. SARAIE, AND K. HARADA (WITH 4 FIGURES)
78 VII GROWTH AND CHARACTERIZATION OF /3-SIC FILMS GROWN ON SI BY
GAS-SOURCE MOLECULAR BEAM EPITAXY BY L.B. ROWLAND, S. TANAKA, R.S. KERN,
AND R.F. DAVIS (WITH 5 FIGURES) 84 ATOMIC LAYER CONTROL OF /3-SIC(001)
SURFACE BY S. HARA, Y. AOYAGI, M. KAWAI, S. MISAWA, E. SAKUMA, AND S.
YOSHIDA (WITH 3 FIGURES) 90 GROWTH AND CHARACTERIZATION OF 6H-SIC BULK
CRYSTALS BY THE SUBLIMATION METHOD BY K. KOGA, Y. FUJIKAWA, Y. UEDA, AND
T. YAMAGUCHI (WITH 6 FIGURES) 96 LIQUID PHASE EPITAXY OF SIC-AIN SOLID
SOLUTIONS BY V.A. DMITRIEV, L.B. ELFIMOV, I.YU. LIN KOV, YA.V.
MOROZENKO, LP. NIKITINA, V.E. CHELNOKOV, A.E. CHERENKOV, AND M.A.
CHERNOV (WITH 3 FIGURES) 101 COMPARISON OF DILUTELY DOPED P-TYPE 6H-SIC
FROM A VARIETY OF SOURCES BY L.L. CLEMEN, W.J. CHOYKE, R.P. DEVATY, J.A.
POWELL, AND H.-S. KONG (WITH 7 FIGURES) 105 GROWTH OF CUBIC SILICON
CARBIDE ON SILICON USING THE C 2 HCL3-SIH 4 -H2 SYSTEM BY I.M. BARANOV,
V.A. DMITRIEV, LP. NIKITINA, AND T.S. KONDRATEVA (WITH 3 FIGURES) 116 AC
PLASMA-ASSISTED CHEMICAL VAPOR DEPOSITION OF CUBIC SILICON CARBIDE ON
SILICON SUBSTRATE BY H. SHIMIZU, K. NAITO, AND S. ISHIO (WITH 7 FIGURES)
119 PART * CHARACTERIZATION OF CRYSTALLINE SILICON CARBIDE HALL EFFECT
AND INFRARED ABSORPTION MEASUREMENTS ON NITROGEN DONORS IN 6H-SIC BY W.
SUTTROP, G. PENSL, W.J. CHOYKE, A. DORNEN, S. LEIBENZEDER, AND R. STEIN
(WITH 4 FIGURES) 129 NITROGEN IMPURITIES IN 3C-SIC EPILAYERS BY I.
NASHIYAMA, S. MISAWA, H. OKUMURA, S. YOSHIDA, AND Y. HIRABAYASHI (WITH 5
FIGURES) 136 ELECTRON NUCLEAR DOUBLE RESONANCE INVESTIGATIONS OF
NITROGEN DONORS IN 6H AND 4H-SIC BY S. GREULICH-WEBER, R. MUELLER, AND
J.-M. SPAETH 142 RECRYSTALLIZATION AND ELECTRICAL PROPERTIES OF
HIGH-TEMPERATURE IMPLANTED (N,A1) 6H-SIC LAYERS BY W. SUTTROP, H. ZHANG,
M. SCHADT, G. PENSL, K. DOHNKE, AND S. LEIBENZEDER (WITH 5 FIGURES) 143
VIII EPR IN THE 2-MM RANGE AND OPTICAL ABSORPTION OF THE NATIVE DEFECT
IN 4H-SIC EPILAYERS BY E.N. KALABUKHOVA, S.N. LUKIN, B.D. SHANINA, YU.A.
VODAKOV, A.A. LEPNEVA, AND E.N. MOKHOV (WITH 4 FIGURES) 149 THE
STRUCTURE OF THE D-CENTER IN SILICON CARBIDE - A STUDY WITH ELECTRON
NUCLEAR DOUBLE RESONANCE BY S. GREULICH-WEBER, R. MUELLER, AND J.-M.
SPAETH 162 OXIDATION STUDIES FOR 6H-SIC BY CS. PATUWATHAVITHANE, J.B.
CROFTON, J.R. WILLIAMS, C.C. TIN, Z.C. FENG, M.J. BOZACK, P.A. BARNES,
R. RAMESHAM, AND CD. ELLIS (WITH 5 FIGURES) 163 ELECTRONIC BAND
STRUCTURES OF SIC CALCULATED FROM A HYBRID PSEUDOPOTENTIAL AND
TIGHT-BINDING MODEL BY P. SRICHAIKUL, A.-B. CHEN, AND W.J. CHOYKE (WITH
2 FIGURES) 170 METALLIZATION STUDIES ON EPITAXIAL 6H-SIC BY J. CROFTON,
J.M. FERRERO, P.A. BARNES, J.R. WILLIAMS, M.J. BOZACK, C.C. TIN, CD.
ELLIS, J.A. SPITZNAGEL, AND P.G. MCMULLIN (WITH 4 FIGURES) 176 *** STUDY
OF /?-SIC FILMS GROWN ON (111) SILICON SUBSTRATES BY K. FEKADE, M.G.
SPENCER, S. NAHM, AND L.G. SALAMANCA-RIBA (WITH 6 FIGURES) 183 THERMAL
OXIDATION OF SINGLE-CRYSTAL SILICON CARBIDE: KINETIC, ELECTRICAL, AND
CHEMICAL STUDIES BY J.B. PETIT, P.G. NEUDECK, L.G. MATUS, AND J.A.
POWELL (WITH 9 FIGURES) 190 DETERMINATION OF STACKING-FAULT ABUNDANCES
AND DISTRIBUTIONS IN SIC USING XRPD AND HRTEM BY P.J. SCHIELDS 197
STRUCTURAL DEFECTS IN EPITAXIAL LAYERS SIC-3C/SI GROWN BY CVD BY R.N.
KYUTT, LP. NIKITINA, S.S. RUVIMOV, AND D. BAITHER (WITH 4 FIGURES) 198
OBSERVATION OF LINEAR ELECTRO-OPTIC EFFECT IN CUBIC SILICON CARBIDE BY
X. TANG, K.G. IRVINE, D. ZHANG, AND M.G. SPENCER (WITH 3 FIGURES) 206
OPTICALLY INDUCED NEAR-IR ABSORPTION LINES IN 6H-SIC BY TH. STIASNY, R.
HELBIG, AND R.A. STEIN (WITH 9 FIGURES) 210 INTERFERENCE FRINGES IN THE
INFRARED REFLECTANCE OF 6H-SIC FILMS ON 6H-SIC SUBSTRATES BY M.F.
MACMILLAN, WJ. CHOYKE, AND R.P. DEVATY (WITH 3 FIGURES) 216 IX LOW
TEMPERATURE PHOTOLUMINESCENCE OF SIC: A METHOD FOR MATERIAL
CHARACTERIZATION AND THE INFLUENCE OF AN UNIAXIAL STRESS ON THE SPECTRA
BY CH. HABERSTROH, R. HELBIG, AND S. LEIBENZEDER (WITH 6 FIGURES) ....
221 PART HI GROWTH AND CHARACTERIZATION OF POLYCRYSTALLINE,
MICROCRYSTALLINE, AND AMORPHOUS SILICON CARBIDE NOVEL FEEDSTOCKS FOR
A-SIC:H FILMS BY Y.-M. LI, B.F. FIESELMANN, AND A. CATALANO (WITH 7
FIGURES) 229 STUDIES OF 1,3-DISILACYCLOBUTANES AS SINGLE-SOURCE CVD
PRECURSORS TO SILICON CARBIDE BY DJ. LARKIN AND L.V. INTERRANTE (WITH 3
FIGURES) 239 FREQUENCY DEPENDENCE OF CONDUCTIVITY OF HYDROGENATED
AMORPHOUS SIC FILMS PREPARED BY PCVD BY A. TABATA, K. TOMIITA, Y.
SUZUOKI, AND T. MIZUTANI (WITH 9 FIGURES) 245 FORMATION OF SIC FOR
MICROELECTRONIC APPLICATIONS BY * IMPLANTATION INTO DOPED A-SI BY B.M.
MANNING, S.B. HEWITT, N.G. TARR, AND T.W. MACELWEE (WITH 5 FIGURES) 252
POLYCRYSTALLINE SIC FILMS PREPARED BY A PLASMA ASSISTED METHOD AT
TEMPERATURES LOWER THAN 1000C BY K. KAMIMURA, K. KOIKE, H. ONO, T.
HOMMA, Y. ONUMA, AND S. YONEKUBO (WITH 4 FIGURES) 259 SIAA-J; ALLOYS
DEPOSITED ON SILICON USING A LOW-COST, HOT-WALL, LPCVD REACTOR BY F.
HEBERT (WITH 4 FIGURES) 266 LOW TEMPERATURE PECVD GROWTH AND
CHARACTERIZATION OF A-SIC:H FILMS DEPOSITED FROM SILACYCLOBUTANE AND
SILANE/METHANE PRECURSOR GASES BY MJ. LOBODA (WITH 5 FIGURES) 271 STUDY
OF OPTIMUM CONDITION FOR MICROCRYSTALLINE SIC FILM FORMATION BY ECR
PLASMA CVD METHOD BY T. MIYAJIMA, K. SASAKI, AND S. FURUKAWA (WITH 5
FIGURES) 281 PART IV APPLICATIONS APPLICATIONS FOR 6H-SILICON CARBIDE
DEVICES BY J.W. PALMOUR, J.A. EDMOND, H.-S. KONG, AND CH. CARTER, JR.
(WITH 6 FIGURES) 289 HBTS USING A-SIC AND /XC-SI BY S. FURUKAWA AND K.
SASAKI (WITH 8 FIGURES) 298 X IMPACT OF SIC ON POWER DEVICES BY B.J.
BALIGA (WITH 7 FIGURES) 305 SIC X :F HETERO-EMITTER AND EPITAXIAL-BASE
BIPOLAR TRANSISTORS BY T. SUGII, T. YAMAZAKI, Y. ARIMOTO, T. ITO, I.
NAMURA, H. GOTO, AND A. TAHARA (WITH 15 FIGURES) 314 A NEW APPLICATION
OF A-SIC FILMS FOR REALIZING HIGH CURRENT GAIN SI HETEROJUNCTION BIPOLAR
TRANSISTORS BY K. SASAKI, T. MIYAJIMA, AND S. FURUKAWA (WITH 4 FIGURES)
322 THE DEVELOPMENT OF ECR-CVD SIC COATINGS FOR X-RAY MASK MEMBRANES BY
A.R. SHIMKUNAS, P.E. MAUGER, L.P. BOURGET, R.S. POST, L. SMITH, R.F.
DAVIS, G.M. WELLS, F. CERRINA, J.E. BUTLER, AND R.B. MCINTOSH .... 326
PATTERN ETCHING OF CRYSTALLINE SIC BY KRF EXCIMER LASER BY K. SHIRAKAWA
AND M. MURAHARA (WITH 13 FIGURES) 328 ELECTRICAL CHARACTERIZATION OF PIN
DIODE STRUCTURES IN 6H-SIC BY C.T. GARDNER, J.A. COOPER, JR., M.R.
MELLOCH, J.W. PALMOUR, AND C.H. CARTER, JR. (WITH 8 FIGURES) 338
HIGH-TEMPERATURE RECTIFIERS, UV PHOTODIODES, AND BLUE LEDS IN 6H-SIC BY
J.A. EDMOND, H.-S. KONG, AND C.H. CARTER, JR. (WITH 5 FIGURES) ... 344
DEPENDENCE OF THE AU-SIC(6H) SCHOTTKY BARRIERS HEIGHT ON THE SIC SURFACE
TREATMENT BY V.A. DMITRIEV, K. FEKADE, AND M.G. SPENCER (WITH 3 FIGURES)
.... 352 PHOTOELECTROCHEMICAL ETCHING AND DOPANT SELECTIVE ETCH-STOPS IN
SIC BY J.S. SHOR, X.G. ZHANG, A.D. KURTZ, AND R.M. OSGOOD, JR. (WITH 4
FIGURES) 356 FABRICATION AND ELECTRICAL PROPERTIES OF /3-SIC/SI AND
POLY-SIC/SI SOLAR CELLS BY A. SOLANGI AND M.I. CHAUDHRY (WITH 3 FIGURES)
362 SIMULATIONS OF GE AND * IMPLANTATIONS TO FORM SII-ZGE^ BJT BY A.
GUPTA, J.W. WATERS, M.M. RAHMAN, AND C.Y. YANG (WITH 5 FIGURES) 368 THE
LIGHT EMITTING DIODES ON THE BASIS OF FAST ELECTRON IRRADIATED SILICON
CARBIDE BY YU.A. VODAKOV, A.I. GIRKA, A.O. KONSTANTINOV, E.N. MOKHOV,
A.D. ROENKOV, S.V. SVIRIDA, V.V. SEMENOV, V.L. SOKOLOV, AND A.V.
SHISHKIN (WITH 4 FIGURES) 374 GRADED-GAP AND QUANTUM-WELL INJECTION
A-SIC:H P-I-N LIGHT-EMITTING DIODES BY JYH-WONG HONG, TEAN-SEN JEN,
SUI-LIANG NING, NERNG-FU SHIN, AND CHUN-YEN CHANG (WITH 5 FIGURES) 381
XI HIGH-TEMPERATURE AND HIGH-VOLTAGE DIAMOND DEVICES BY H. SHIOMI, Y.
NISHIBAYASHI, AND N. FUJIMORI (WITH 7 FIGURES) 387 GAMMA-RAY IRRADIATION
EFFECTS ON CUBIC SILICON CARBIDE METAL-OXIDE-SEMICONDUCTOR STRUCTURE BY
M. YOSHIKAWA, Y. MORITA, H. ITOH, I. NASHIYAMA, S. MISAWA, H. OKUMURA,
AND S. YOSHIDA (WITH 4 FIGURES) 393 FORMATION OF SIGE/SI
HETEROSTRUCTURES BY LOW-TEMPERATURE GERMANIUM ION IMPLANTATION BY K.
SHOJI, A. FUKAMI, T. NAGANO, T. TOKUYAMA, A. GUPTA, AND C.Y. YANG (WITH
4 FIGURES) 399 CHARACTERIZATION OF GE AND * IMPLANTED SI DIODES BY *
COOK, A. GUPTA, AND C.Y. YANG (WITH 3 FIGURES) 405 SELECTIVE GROWTH OF
SIC AND APPLICATION TO HETEROJUNCTION DEVICES BY S. NISHINO, H. TANAKA,
K. TAKAHASHI, AND J. SARAIE (WITH 5 FIGURES) 411 ELECTRICAL
CHARACTERIZATION OF EPITAXIAL TITANIUM CONTACTS TO ALPHA (6H) SILICONE
CARBIDE BY L.M. SPELLMAN, R.C. GLASS, R.F. DAVIS, T.P. HUMPHREYS, R.J.
NEMANICH, *. DAS, AND S. CHEVACHAROENKUL (WITH 8 FIGURES) 417 EFFECT OF
H2 ADDITIVE ON REACTIVE ION ETCHING OF /3-SIC IN CHF3/O2 PLASMA BY A.J.
STECKL AND P.H. YIH (WITH 5 FIGURES) 423 INDEX OF CONTRIBUTORS 431 XII
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| indexdate | 2024-07-09T17:31:42Z |
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| spelling | Amorphous and crystalline silicon carbide IV proceedings of the 4th international conference, Santa Clara, CA, October 9 - 11, 1991 C. Y. Yang ... (ed.) Berlin [u.a.] Springer 1992 XII, 432 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Springer proceedings in physics 71 Siliciumcarbid (DE-588)4055009-6 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 1991 Santa Clara Calif. gnd-content Siliciumcarbid (DE-588)4055009-6 s DE-604 Yang, Cary Y. Sonstige oth Springer proceedings in physics 71 (DE-604)BV000018744 71 GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=006061192&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Amorphous and crystalline silicon carbide IV proceedings of the 4th international conference, Santa Clara, CA, October 9 - 11, 1991 Springer proceedings in physics Siliciumcarbid (DE-588)4055009-6 gnd |
| subject_GND | (DE-588)4055009-6 (DE-588)1071861417 |
| title | Amorphous and crystalline silicon carbide IV proceedings of the 4th international conference, Santa Clara, CA, October 9 - 11, 1991 |
| title_auth | Amorphous and crystalline silicon carbide IV proceedings of the 4th international conference, Santa Clara, CA, October 9 - 11, 1991 |
| title_exact_search | Amorphous and crystalline silicon carbide IV proceedings of the 4th international conference, Santa Clara, CA, October 9 - 11, 1991 |
| title_full | Amorphous and crystalline silicon carbide IV proceedings of the 4th international conference, Santa Clara, CA, October 9 - 11, 1991 C. Y. Yang ... (ed.) |
| title_fullStr | Amorphous and crystalline silicon carbide IV proceedings of the 4th international conference, Santa Clara, CA, October 9 - 11, 1991 C. Y. Yang ... (ed.) |
| title_full_unstemmed | Amorphous and crystalline silicon carbide IV proceedings of the 4th international conference, Santa Clara, CA, October 9 - 11, 1991 C. Y. Yang ... (ed.) |
| title_short | Amorphous and crystalline silicon carbide IV |
| title_sort | amorphous and crystalline silicon carbide iv proceedings of the 4th international conference santa clara ca october 9 11 1991 |
| title_sub | proceedings of the 4th international conference, Santa Clara, CA, October 9 - 11, 1991 |
| topic | Siliciumcarbid (DE-588)4055009-6 gnd |
| topic_facet | Siliciumcarbid Konferenzschrift 1991 Santa Clara Calif. |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=006061192&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| volume_link | (DE-604)BV000018744 |
| work_keys_str_mv | AT yangcaryy amorphousandcrystallinesiliconcarbideivproceedingsofthe4thinternationalconferencesantaclaracaoctober9111991 |