Solid state device research 92: proceedings of the 22nd European Solid State Device Research Conference ESSDERC '92, 14 - 17 September 1992, Leuven, Belgium
Gespeichert in:
| Format: | Tagungsbericht Buch |
|---|---|
| Sprache: | English |
| Veröffentlicht: |
Amsterdam [u.a.]
Elsevier
1992
|
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | Aus: Microelectronic engineering ; 19 |
| Beschreibung: | XXXVII, 931 S. Ill., graph. Darst. |
| ISBN: | 0444894780 |
Internformat
MARC
| LEADER | 00000nam a2200000 c 4500 | ||
|---|---|---|---|
| 001 | BV009126362 | ||
| 003 | DE-604 | ||
| 005 | 20121123 | ||
| 007 | t | ||
| 008 | 940311s1992 ad|| |||| 10||| eng d | ||
| 020 | |a 0444894780 |9 0-444-89478-0 | ||
| 035 | |a (OCoLC)26362235 | ||
| 035 | |a (DE-599)BVBBV009126362 | ||
| 040 | |a DE-604 |b ger |e rakddb | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-91 |a DE-83 | ||
| 050 | 0 | |a TK7871.85 | |
| 082 | 0 | |a 621.3815/2 |2 20 | |
| 084 | |a ELT 340f |2 stub | ||
| 245 | 1 | 0 | |a Solid state device research 92 |b proceedings of the 22nd European Solid State Device Research Conference ESSDERC '92, 14 - 17 September 1992, Leuven, Belgium |c ESSDERC '92. Ed. by H. E. Maes ... |
| 264 | 1 | |a Amsterdam [u.a.] |b Elsevier |c 1992 | |
| 300 | |a XXXVII, 931 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 500 | |a Aus: Microelectronic engineering ; 19 | ||
| 650 | 4 | |a Semiconductors |v Congresses | |
| 650 | 4 | |a Solid state electronics |v Congresses | |
| 650 | 0 | 7 | |a Halbleiterbauelement |0 (DE-588)4113826-0 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Festkörperbauelement |0 (DE-588)4154179-0 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Mikroelektronik |0 (DE-588)4039207-7 |2 gnd |9 rswk-swf |
| 655 | 7 | |0 (DE-588)1071861417 |a Konferenzschrift |y 1992 |z Löwen |2 gnd-content | |
| 689 | 0 | 0 | |a Mikroelektronik |0 (DE-588)4039207-7 |D s |
| 689 | 0 | 1 | |a Halbleiterbauelement |0 (DE-588)4113826-0 |D s |
| 689 | 0 | |5 DE-604 | |
| 689 | 1 | 0 | |a Festkörperbauelement |0 (DE-588)4154179-0 |D s |
| 689 | 1 | |5 DE-604 | |
| 700 | 1 | |a Maes, H. E. |e Sonstige |4 oth | |
| 711 | 2 | |a ESSDERC |n 22 |d 1992 |c Löwen |j Sonstige |0 (DE-588)5075220-0 |4 oth | |
| 856 | 4 | 2 | |m Digitalisierung TU Muenchen |q application/pdf |u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=006048992&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |3 Inhaltsverzeichnis |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-006048992 | ||
Datensatz im Suchindex
| _version_ | 1804123541717647360 |
|---|---|
| adam_text | XV
CONTENTS
Preface v
Committees
vii
Sponsors
xi
Timetable
xii
Contents
xv
[Šessío n
І
а
:
Ρ
LE
N
ARY
INVITED PAPERS
lai
USLI
CMOS
-
The Next Ten Years
(Invited Paper)
P. Chatterjee
Ia2
Recent Development in InP-based Optoelectronic Devices
(Invited Paper)
Y. Suematsu
Session II a: CMOS
liai
Isolation Design Comparisons for
0.5
μηι
CMOS Technology
using SILO Process
13
G. Guegan,
S. Deleonibus, M. Lerme, J.P.
Blanc
Ila2
Investigations of the Resistivity of
TÍSÍ/P+
Contacts and
their Optimisation in a
0.5
μηι
CMOS Technology
17
W. Neumueller, F. Hoehnel
НаЗ
Device Characterisation of a High-performance
0.25
μηι
CMOS Technology
21
P.H. Woerlee,
C.A.H. Juffermans,
Η.
Lifka,
W.H.
Manders,
H.G. Pomp,
G.M.
Paulzen, A.J. Walker, R. Woltjer
Ila4
Shallow
P-^-Junction Technology
for
0.25
μηι
CMOS
25
Η.
Pomp, P.H. Woerlee, A.J. Walker
Session
II
b:
MODELING OF COMPOUND SEMICONDUCTOR DEVICES
ИЫ
Simulation of Compound Semiconductor Devices
31
(invited Paper)
W.
Schoşnmaker,
R. Vankemmel
xvi Contents
ІІЬ2
Numerical Analysis of InP-JFET by use of a Quasi
20-Model
39
W.
Brockerhoíf,
P. Ellrodt, W.
Güldner,
К.
Heime,
F.J. Tegude
ІІЬЗ
Two-dimensional Noise Calculations of Sub-micrometer
MESFETs
43
A. Abou-Elnour, K.
Schünemann
Session II c: OPTOELECTRONICS]
lid
Fast and Sensitive Two-terminal Double-heterojunction
Optical
Thyristors 49
P.
L.
Heremans,
M.
Kuijk, R. Vounckx,
G. Borghs
Ilc2
Experiments on Optoelectronic
Bistability
in Distributed
AlAs/GaAs-Bragg Reflectors
53
S. Knigge, S. Zumkley, G.
Wingen, O.
Humbach, C.Chaix, D. Jäger
НсЗ
Surface
Emitting Semiconductor
Laserdiodes
Based on
Surface Mode Emission
57
A.K.
Köck,
A. Seeberg, M. Rosenberger, E.
Górnik,
C. Thanner, L.
Korte
Ilc4
First Demonstration of Sub-nanosecond Photon Timing
with a Germanium
Photodiode
61
A. Lacaita, S.
Cova,
F.
Zappa,
G.
Ripamonti, P. Lovati
Session III a: CMOSl
Illai
Total Quality Management (TQM) in Research and Development
67
(Invited Paper)
K. Beasley
Illa2
A GIGABIT Scalable SILO Field Isolation using Rapid
Thermal Nitridation (RTN) of Silicon
75
S. Deleonibus
ІІІаЗ
New Transient Characterization of Latchup Phenomenon
in CMOS Cell
79
F.M. Roche,
S.D.
Bocus, P.
Girard,
R.
Bariìle
Contents xvii
Ша4
A
Silicon
Vertical JFET Compatible with
Standard 0.7
μηι
CMOS Technology
83
A. Granier, M. Mouis,
N.
Degors, J. Kirtsch,
A. Chantre
Session III b: LARGE AREA ELECTRONICS
HIM
Physics and Modeling of Polycrystalline Silicon Thin-Film
Transistors
89
(Invited Paper)
P.
Migliorato
IIIÒ2
Comparative Study of Low Temperature Polycrystalline Silicon
Thin-Film Transistors Obtained by Various Crystallization
Techniques for use in Active Matrix LCDs
97
H. Pattyn, J.
Poortmans,
P. Debenest, M. Caymax, P.
Vetter,
M. Elliq,
E.
Fogarassy,
Ζ.
Nényei,
J. Nijs, R. Mertens
ІІІЬЗ
Laser
Crystallised
Polycrystalline Silicon
Thin-Film Transistors
101
S.D. Brotherton, DJ.
McCulloch, J.
P. Gowers, A. Gill
ІІІЬ4
Gate Bias Instability in Polycrystalline Silicon Thin-Film
Transistors Formed using Various Gate Dielectrics
105
N.D. Young, A. Gill
IHb5
Hot Carriers Effects in Polycrystalline Silicon Thin-Film
Transistors
109
L. Mariucci,
A. Pecora,
G.
Fortunato,
С.
Reità,
Р.
Migliorato
Session
III c:
III
-
V GENERAL!
nid
Compound Semiconductor Devices for Operation at
Elevated Temperatures
115
(Invited Paper)
H.L.
Hartnagel
ІІІС2
Modeling of Gain-guided Vertical-cavity Laser Diodes
123
R. Michalzik,
K.J.
Ebeling
ІІІсЗ
Tunneling and lonization Phenomena in GaAs Pin Diodes
127
D. Liebig, P.
Lugli,
P. Vogl, M. Claassen, W. Harth
xviii Contents
ІІІС4
The Permeable Junction Base Transistor with a New Gate
of Extremely High Doped p-^+GaAs
131
J.
Gräber,
M.
Kamp,
G.
Morsch,
R.
Meyer,
H.
Hardtdegen,
H.
Lüth
ІІІС5
Impact lonization
Phenomena in AIGaAs/GaAs HBTs
135
A. Di
Carlo, P.
Lugli,
P.
Pavan, E. Zanoni, R.
Malik
Session IV
a:
SMART
POWER TECHNOLOGY
IVa1
Smart
Power Devices
141
(Invited
Paper)
J.
Tihanyi
IVa2
Light Triggered
Thyristor
with
a MOS
Amplifying Gate:
An Example of Functionally Integrated Vertical High
Voltage Power Device
145
J.-L Sanchez, R. Berriane, F.
Rossel,
Ph. Leturcq
IVa3
A Self-isolated and Efficient Power Device for HVIC s:
RESURF LDMOS
with
SIPOS
Layers
149
G. Charitat, M.A. Bouanane, P.
Rossel
IVa4
A Smart Power Process in Direct-Bonded Silicon on
Insulator with
150
V VDMOS, CMOS and Bipolar Transistors
153
Th.
Ifström,
U.
Appel,
H-G.
Graf,
С.
Harendt,
В.
Höfflinger
IVa5
A Novel Technique for the Production of Thin Devices
157
R. Wilson, H.S. Gamble, A.S. Hudson
IVa6
Floating Well Based Design Methodology Aimed to Improve
Latch-up Immunity in a Smart Power Technology
161
M. Puig
Vidal, M.
Bafleur,
J.
Buxo,
G. Sarrabayrouse
IVa7
A
Fully Integrated Silicon-based 40-V
Thermal
Ink
Jet
1С 165
W.G.
Hawkins,
C.J.
Burke,
Т.Е. Watrobski, T.A.
Tellier,
S.
Verdonckt-Vandebroek,
T.P.
Chow
Contents xix
Session
IV
b:
LARGE AREA ELECTRONIC, SENSORS, MICROSYSTEMS
IVb1
Amorphous Silicon Thin-Film Transistors and their Applications
171
(Invited Paper)
F. Mo
rin
IVb2
Current DLTS Measurements on Polycrystalline Silicon Thin
Film Transistors
179
J.R. Ay res
IVb3
Analysis of Short Channel Effects in Polycrystalline Silicon
Thin Film Transistors: A New Method
183
C.
Reità,
P.
Migliorato, A. Pecora,
G.
Fortunato,
L.
Mariucci
IVb4
Thin Film Cadmium
Selenide
Technology in Large Area
Active Matrix High Resolution Displays
187
J. Farrell, M. Westcott, A. Van Calster, J.
De
Baets,
I. De Rycke,
J. Capon, H.
De Smet,
J. Doutreloigne, J. Vanfieteren
IVb5
Megárad-
a New Alpha Radiation Detection System for
Environmental Surveys
T. Streil, A. Erlebach, P.
Hübler,
A. Scade,
W.
Kluge, R. Jahne
IVb6
CMOS Compatible Micromachining by Dry Silicon-etching
Techniques
191
S. Adams, U. Hilleringmann, K. Goser
IVb7
Micromechanically Structurized Sensors on GaAs: An
Integrated Anemometer
195
K. Fricke, H.L.
Hartnagel,
S.
Ritter,
J.
WürfI
IVb8
Surface Micromachined Scanning Mirrors
199
K.E.
Mattsson
Paper not available at time of going to press
xx Contents
Session
IV
с:
INTEGRATION IN OPTOELECTRONICSj
IVd
Low Temperature Growth of GaAs-on-Si
(Invited Paper)
F. Briones
IVc2
High Performance Hybrid Optoelectronic Terminal
Components for Optical Interconnect
205
(Invited Paper)
A.J. Moseley, M.J. Goodwin, R.C. Goodfellow
IVc3
Heteroepitaxial or Epitaxial Lift-off Approach for Future
Optoelectronic GaAs MESFET/lnP Optical Switch Integration?
207
I.
Pollentier,
L.
Buydens, P. Van Daele, P. Demeester
IVc4
Results of Monolithic Integration of Optical Waveguides,
Photodiodes
and CMOS Circuits on Silicon
211
U. Hilleringmann, K. Goser
IVc5
6
x
700
Mbit/s Array Transmitter/Receiver Pair Realised
in Opto-hybrid Silicon Motherboard Technology
215
J.W. Parker, P.M. Harrison, P.J. Ayliffe, T.V. Clapp, M.C. Geear, R.G. Peall
IVc6
10
Gbit/s Operation of Integrated BRS Laser-MISFET on
Indium Phosphide
219
G. Post,
С
Kazmierski, F. Delorme
IVc7
Resonant Wavelength Selective Photo-detectors
223
T. Wipiejewski, K. Panzlaff, K. Ebeling
Session
V
a: PLENARY INVITED PAPERS^
Va1
Impact of New Chip Technologies on Consumer Products
229
(Invited Paper)
T.A.C.
M.
Ciaassen
*
Paper not available at time of going to press
Contents xxi
Va2
Impact
of New Chip
Technologies
on Telecommunications
235
(Invited
Paper)
D. Rabaey
Session
VI
a: NON-VOLÂtÎLË
MEMORIES!
Vial
Ferro-electrics for Non-volatile Memories
245
(Invited Paper)
Ft. Cuppens, P.K. Larsen,
G.A.C.
M. Pierings
Vla2
A Novel Isolation Scheme for Implementation in Very High
Density AMG
EPROM
and FLASH
EEPROM
Arrays
253
G.R. Wolstenholme, A. Bergemont
Vla3
An Analytical Model for the Optimization of High Injection
MOS
Flash E2PROM Devices
257
J. Van
Houdt,
G.
Groeseneken,
H.E.
Maes
Vla4
Simulation of
EPROM
Device Programming using the
Hydrodynamic Model
261
S. Keeney, A. Mathewson, L. Ravazzi, C.
Lombardi
Vla5
Carrier Temperature Dependent Gate Current Modeling
for
EEPROM
Simulation
265
J.G. Rollins, V. Axelrad, S.J. Motzny
Vla6
Reliability Properties of Rapid Thermal Processed Nitrided
Oxides after Fowler-Nordheim Electrical Stress
269
С
Papadas,
G. Ghibaudo, G. Pananakakis, P. Mortini,
C. Riva,
F.
Pio
і
Session
VI
b:
HIGHER ORDER
TRANSPORT
MODELS!
Vlb1
Monte Carlo Simulation
of
Charge Transport in
Semiconductor
Devices
275
(Invited
Paper)
P.
Lugli
xxii Contents
Vlb2
Ensemble Monte Carlo Simulation
of a Pulse-doped GaAs
MESFET
with a Doped-layer of 100A
283
Y. Yamada, T.
Tornita
Vlb3
Quantum
Analysis of Zener-assisted
Impact lonization for
Transient Regimes and Strong Electric Fields
287
W. Quade, F. Rossi,
С
Jacoboni, E.
Scholl
Vlb4
Hydrodynamic Simulation of an n-MOSFET at
77
К
291
A. Leone, A. Gnudi, G. Baccarani
Vlb5
Hydrodynamic Simulation of Hysteresis Phenomena in SOI
MOSFET Characteristics
295
I.
Bork,
В.
Meinerzhagen,
W.
L. Engl
Vlb6
Non-local Avalanche
Calculation for Deep Sub-micron
Silicon Devices
299
G. Streutker, J.W.
Slotboom
[Session VI c: Ill-V
μ
-WAVE
DEVICES;
Vici
Current Status of Heterojunction Bipolar and High-electron
Mobility Transistor Technologies
305
(Invited Paper)
D. Pavlidis
Vlc2
Experimental and Theoretical Investigation of Parameter
Evolution of Ultra-short Gate Standard and
Pseudomorphic HEMTs
313
A. de
Lustrac, P. Crozat, P. Dollfus, Y. Jin, K. Yazbek, R. Adde, G.
Vemet,
M.
Van Hove,
W. De
Raedt, M. Van Rossum, Y. Jin, B.
Etienne, H. Launois
Vlc3
Metamorphic lno.27Gao.73As/lnQ.25Alo.75As
HEMT
on
GaAs: MBE Growth and Device Performance
317
P. Win, Y. Cordier, Y. Druelle,
С
Bouillet, J. Favre, A. Cappy
Vlc4
Fabrication of
Ο.Ι-μηι
Planar-doped Pseudomorphic HEMT s
using a PECVD Silicon Nitride Assisted Process
321
G.
Zou,
W.
De
Raedt,
M.
Van Hove,
M.
Van Rossum, Y. Jin, H.Launois
Contents xxiii
Vlc5
Fabrication of Striped Channel Pseudomorphic HEMTs
325
S. Bollaert, P. Legry, P. Win, H. Happy, A. Cappy
Vlc6
Pseudomorphic GaxIni-xAs on InP for
HEMT
Structures
Grown by MBE
329
H.
Künzel,
H.G.
Bach,
J.
Böttcher, J. Dickmann,
H. Dämbkes,
G.
Nachtwei, S. Heide
Session
VII al
:
Si HETEROJUNCTIONS AND
BIPOLAR
DEVICES
Vllai/1
SiC
Growth and its
Application
to High-speed
Silicon HBT s
335
(Invited
Paper)
T. Sugii, T. Yamazaki, Y. Arimoto, T. Ito, Y.
Furumura, I. Namura,
H. Goto, A. Tahara
Vllai/2
PolySilicon Emitter
with a Nitrided Interface
343
S.M.
Savage
Vlial
/3
Ultrashallow Emitter-base Profiles by Double Diffusion
347
M.
Biebl,
M.
Bianco,
К.
Ehinger,
H. v.
Philipsborn,
H.
Klose
Vllai/4
SiCGe Ternary Alloys
-
Extending Silicon-based Heterostructures
351
S.S.
Iyer, K. Eberl, A.R. Powell, B.A. Ek
Session
VII
b: SILICIDES-RTP
-
SHALLOW JUNCTIONS
Vl!b1
Avoiding Dislocations in Ion-implanted Silicon
357
(Invited Paper)
F.W. Saris, J.S. Custer, RJ. Schreuteikamp, R.J. Liefting, R. Wijburg,
H.
Wallinga
Vllb2
Electrical Behaviour of Junctions Obtained by Rapid
Thermal Annealing of BF2 Implanted Layers
363
M.L. Polignano, A. Losavio
Vllb3
Anomalous Electrical Deactivation of Low Concentration
Rapid Thermally Annealed Arsenic Implanted Silicon
367
J.L Altrip, A.G.R. Evans
xxiv Contents
Vllb4
Process
Integration
for Barrier Layers and Al-Alloys Using
a Sputtering Cluster Tool
371
H.
Wendt,
J.
Willer,
D.
Emmer,
S. Irl
Vllb5
Properties of LPCVD TiN Barrier Layers
375
J.
T.
Hillman,
D.W. Studiner, M.J. Rice
Jr.,
С.
Arena
Vllb6
In-process Control of Co Suicide Formation by
RTA
379
J-M. Dilhac,
С
Ganibal,
N.
Nolhier, P.B. Moynagh, C.P. Chew, P.J.
Rosser
Vllb7
Measurement of Wafer Temperature by Interference
383
D. Bollmann, K. Haberger
Session
VII c:
Hl-V
μ
-WAVE
DEVICES]
Vild
Advanced
Hl-V HEMT Technology
for Microwave and
Millimetere-wave Applications
389
(Invited Paper)
A.P. Long and I.G. Eddison
Vllc2
Very
non
Linear Transconductance of Highly
Delta-Doped Multichannel HEMT s
397
D. Théron, T. Coupez,
В.
Bonte,
Y. Crosnier
Vllc3
Analysis of Gate Leakage on MOVPE Grown
InAIAs/lnGaAs-HFET
401
F.
Buchali,
С.
Heedt,
W.
Prost,
I. Gyuro,
H.
Meschede, F.J. Tegude
Vllc4
Hot-electron Induced Degradation in AIGaAs/GaAs HEMTs
405
С
Tedesco,
С.
Canali,
F.
Magistrali, A. Paccagnella, E. Zanoni
Vllc5
Normally-off GaAs BMFET
with Heterojunction Emitter
409
G.
Schweeger,
H.L.
Hartnagel
Vllc6
A 45GHz AIGaAs/GaAs HBT
1С
Technology
without
łon-implantation
413
SJ.
Prasad,
B. Vetanen, C.
Haynes, S.
Park, I. Beers, S. Diamond,
G. Pubanz, J.
Ebner,
S.
Sanielevici,
A. Ágoston
Contents xxv
Vllcľ
Linear and Nonlinear Analysis of
Submicron
П+
nn* Diodes
for Microwave Generators
417
V. Gruzhinskis, E. Starikov, P. Shiktorov, L.
Reggiani, L. Varani,
T.Kuhn
Vllc8
Coplanar
Microwave
Phase
Shifter for InP-based MMICs
421
M. Dragoman, M. Block, R. Kremer, F.
Buchali,
F.J.
Tegude,
D.
Jäger
(Session
Vlil a:
Si HETEROJUNCTION DEVICES
Villái
Heterojunction Bipolar Transistors with Si^Gex Base
427
(Invited Paper)
A. Pruijmboom,
C.E. Timmering,
J.M.L.
van Rooij-Mulder, DJ.
Gravesteijn,
W.B. De Boer,
J.W.
Kersten,
J.W.
Slotboom,
C.J.
Vriezema, R.
de Kruif
Vllla2
The Influence of
MBE-layer Design
on the High Frequency
Performance of Si/SiGe HBTs
435
A. Gruhle, H.
Kibbel, E.
Kasper
Vllla3
Band Offsets
in Heaviliy
Doped
p
Type GeSi/Si^OO)
Strained
Layers: Applications to Design of Long Wave length Infrared
(LWIR) detectors
439
S.C. Jain, J.
Poortmans,
J. Nijs,
P. Van Mieghem, R.P. Mertens,
R. Van Overstraeten
VIIIa4
Evidence of the Influence of Heavy-doping Induced
Bandgap
Narrowing on the Collector Current of Strained
SiGe-base Heterojunction Bipolar Transistors
443
J.
Poortmans,
S.C.
Jain,
M.
Caymax, A. Van Ammel, J. Nijs, R.P. Mertens,
R. Van Overstraeten
Vllla5
Characterisation of Heterojunction Bipolar Transistors
Incorporating Si/Sh-xGex Epitaxial Double Layers with
n+ Emitter Implants
447
D.J. Robbins, W.Y. Leong, J.L. Glasper, A.J. Pidduck, R. Jackson,
I.R.C. Post, Z.A. Shafi. P. Ashburn
xxvi Contents
Session
VIII b:
HOT CARRIER D_EGRADAJJON_OF MOSFET sj
Vlllbi
Dynamic Effects in Hot-carrier Degradation Relevant for
CMOS Operation
453
(Invited Paper)
W. Weber, M. Brox
Vlllb2
Aging Study of Optimized
Submicron n-MOSFET s
(DC, AC,
and Alternating Stress Conditions): Correlation between
Charge Pumping and Classical Parameters
461
N.
Revil, S. Cristoloveanu, P. Mortini
Vlllb3
On the Different Time Dependence of Interface Trap
Generation and Charge Trapping During Hot Carrier
Degradation in CMOS
465
R.
Bellens,
G. Groeseneken, P.
Heremans, H.E.
Maes
Vlllb4
A Simple Charge-pumping Method to Measure the
Logarithmic-time Dependence of Trapped Oxide Charge
in P-MOSFET s
469
A. Bravaix, D. Vuillaume
Vlllb5
Hot Carrier-induced Degradation Mechanisms in
Short-channel
SIMOX
P-MOSFET s
473
T. Ouisse, A.J.
Auberton-Hervé,
В.
Giffard,
G.
Reimbold
Vilibe
Hole
Trapping
and Hot-hole Induced Interface Trap
Generation in MOSFET s at Different Temperatures
477
G. Van den Bosch, G. Groeseneken, P.
Heremans,
M.
Heyns, H.E.
Maes
Vlllbľ
Dumping of Electron Heating Effects in Thermal Oxides on
Ge-doped Silicon
481
V.V. Afanas ev, A.Ph. Akulov, E.M. Gorid, V.V.
Petrov, V.S.
Prosolovich
Session
VIII
c: PROCESS MODELING1
Vllld
The Role of Electrically Active and Inactive
Donators in
the
Oxidation Rate Enhancement of Silicon
487
P.H.
Linke, B.
Müller, H.H.
Berger
Contents xxvii
Vlllc2
Pseudo-analytical Modelling of Stress Dependent Silicon
Oxidation
491
D. Collard, B. Baccus, V. Senez
VIIIC3
The Segregation of Main Dopant Species at the SiO2-Si
Interface Calculated by First Order Thermodynamics*
K.
Haberger, G. Neumayer, R. Büchner
V[llc4
Simulation of High Energy Implantation Profiles in
Crystalline Silicon
495
L. Gong, S.
Bogen,
L.
Frey,
W. Jung,
H. Ryssel
Vilico
Aluminum Thinning onto Blanket and Etched Back Tungsten
Plugs: Simulation of Geometrical Effects
499
M.S. Marangon, G.
De Santi, A. Marmi
rol
i, R.
Pasinetti
VIIIC6
A Dual Sticking-coefficient Chemical Vapor Deposition Model
503
H.
Wille,
E.P. Burte
VIIIC7
Process Technology Optimization using an Integrated
Process and Device Simulation Sequencing System
507
R. Cartuyvels, R. Booth, L.
Dupas,
К.
De
Meyer
Villc8
Process Analysis using RSM and Simulation
511
M. Cecchetti, M. Lissoni, C.
Lombardi,
A. Marmiroli
Session IX a: PLENARY INVITED PAPERS
IXa1
The Future for Multichip Modules
517
(Invited Paper)
M. Sage
¡Xa2
SiGe Heterojunctions: Devices and Applications
519
(Invited Paper)
M. Arienzo, J.H. Comfort, E.F.
Crabbé, D.L. Harame,
S.S.
Iyer, V.P. Kesan,
B.S. Meyerson, G.L.
Patton,
J.M.C.
Stork. Y-C. Sun
Paper not available at time of going to press
xxviii Contents
Session
X
a: Si
BIPOLAR DEVICES AND TECHNOLOGY;
Xa1
Novel
Bipolar Transistor Isolation
Structure Using Combined
Selective Epitaxial Growth and Planarization Technique
531
J.N.
Burghartz,
J.
Warnock,
J.D.
Cressler,
С.
L.Stanis,
R.C. Mclntosh,
J.Y.-C. Sun, J.H.
Comfort, J.M.C.
Stork, K.A. Jenkins,
E.F. Crabbé,
W.
Lee,
M. Gilbert
Xa2
Near-future
Perspectives for Si
and Sh-yGey Bipolar
Transistors
535
S.
Marksteiner,
A.
Felder,
T.F. Meister
ХаЗ
High-speed, High-quality WEB NPN Transistors with
Phosphorous Emitters
539
L.K. Nanver, E.J.G. Goudena, H.W. van Zeijl
Xa4
Improvement of Device Characteristics by Multiple Step
Implants or Introducing
a C Gettering
Layer
543
R.C.M. Wijburg,
J.R. Liefting, J.S. Custer, H.
Wallinga, F.W.
Saris
Xa5
Performance
of a CMOS Compatible Polysilicon Bipolar
Transistor with High Energy Ion Implanted Collector
547
A. Marty,
N.
Degors, J. Kirtsch,
A. Chantre,
A. Nouailhat
Xa6
A
0.8
џт
BiCMOS Technology for Mixed Analog-digital
Applications with Complementary Bipolar Transistors
551
J.
Arndt,
P. Conze
Xa7
A Modular BiCMOS Technology Including 85V DMOS
Devices for Analogue/Digital ASIC Applications
555
J.S. Witters
Session X b: INTERCONNECTION
ХЫ
Limitations of Electrical Interconnections in Electronic
Systems
561
(Invited Paper)
T.G. Noll
Contents xxix
ХЬ2
Interconnect
Technologies
for Multi-chip
Modules:
High
Frequency Characterization and Loss Analysis
563
J. Peeters, E. Beyne and G.
Brandii
ХЬЗ
Short Links Modelling in Multi-level Package
567
N.
Hassaïne,
R.
Mezui-Mintsa,
A. Boudiaf, A. Konczykowska, H. Wang
ХЬ4
Thermodynamic analysis of Copper CVD using CuCI as
Precursor
571
R. Madar,
С
Bernard, J. Palleau, J. Torres
Xb5
Ta/Polyimide Adhesion Durability
575
A. Callegari,
B. Furman, T.
Graham,
H. Clearíield, W.
Price,
S. Purushothaman
Xb6
The Influence
of Current
Stress on
the Ageing of
Au-AI1%Si
( T/oCu)
Ball-bond Contacts Studied by
SEM
and EDX
579
M. D Olieslaeger, L.
De Schepper,
W.
De Ceuninck,
L.
Stals
Session
X
c: CHARACTERIZATION
Хс1
Measurement of Two-dimensional Doping Profiles
585
(Invited Paper)
R. Subrahmanyan
Xc2
Lateral Spread of High Energy
P
and
B lons
Implanted in
Silicon along the
[100]
Axis and in Random Direction
593
V. Privitera, V. Raineri,
E. Rimini
Xc3
Charge Trapping in Wafer Bonded
MOS
Structures
597
A. Jauhiainen. S.
Bengtsson, O. Engström
Xc4
Temperature and Field Effects on the Conduction
Mechanisms in Semi-insulating Polycrystalline Silicon
601
S.
Lombardo.
S.U.
Campisano. F.
Baroetto
Xc5
Random Telegraph Signal Noise: A Probe for Hot-carrier
Degradation Effects in Submicrometer MOSFET s
? 605
E. Simoen. B. Dienckx,
С
Claeys
xxx Contents
Хсб
Characterization
of the Ionizing
Radiation
Sensitivity of
a CCD
Technology
609
Α.
Simone,
I. Debusschere, A. Alaerts,
С
Claeys
Session XI a: SOLID STATE IMAGE
ŔS]
Xla1
Technology and Applications of High-density Sensors
615
(Invited Paper)
R.P. Koshla
Xla2
A
2
Million Pixel FIT
CCD
Image Sensor for HDTV
Camera System*
M. Yamagishi, T.
Oda,
K. Harada
ХІаЗ
A CCD
Delay Line to Determine Low Concentrations of Bulk
Traps in Silicon
623
W.J.
Toren, J.
Bisschop
Xla4
A Defect-limited Noise Model for a Charge-coupled
Device Pixel
627
R.D. McGrath, S.F. Clark, P.K. Duane, S. Haque-Ahmed
Xla5
Pixel Structure with Logarithmic Response for Intelligent
and Flexible Imager Architectures
631
N.
Ricquier, B. Dierickx
ХІаб
A
3X3
Infrared Matrix Sensor Using PVDF on Silicon
635
P.C.
A.
Hammes,
P.P.
L
Regtien
Xla7
Smart Imager for Fast and Inexpensive Mass-spectrometer
Back-ends
639
B. Dierickx, D. Geeraert, D. Nevejans
Xla8
Novel Contribution in Branch of Ultra-fast Condensed
Matter
Spectroscopie
Photon Counting System
643
i. Procházka,
К.
Hamal,
В.
Sopko, I. Mácha
Paper not available at time of going to press
Contents xxxi
Sessjon_X
IJ^SILICiDES-RTP-SH
ALLOW
JUNCTIONSJ
Х1Ы
Shallow Junctions, Suicide Requirements and Process
Technology for sub
0.5
μΐη
CMOS
649
(Invited Paper)
B. Davari
Xlb2
Electrical Properties of Thin S1O2 Films Nitrided in
N2
О
by Rapid Thermal Processing
657
M.
Severi,
G.
Mattéi,
L.
Dori,
P. Maccagnani, G.
L.
Baldini, G. Pizzochero
ХІЬЗ
Implementation of a TiN Cap Layer into Conventional
Self-aligned RTP Titanium Disilicide
MOS
Process
661
W. Kaplan, S-L. Zhang, H.
Norström,
M.
Östling,
A. Lindberg
ХІЬ4
Thermal
Stability of C0S12 on
Submicron Polycrystalline
Silicon Lines
665
R.J. Schreutelkamp, B. Deweerdt, R. Verbeeck, K.
Маех
Xlb5
Comparison of Self-aligned Suicide Technologies for
Shallow
C0SÌ2
-Contacts in VLSI Devices
669
C. Schäffer, D.
Depta,
L.
Niewöhner
ХІЬб
Shallow Junction Formation using M0S12 as Diffusion Source
673
R. Angelucci, M.
Impronta,
G.
Pizocchero,
A. Poggi,
S.
Solmi, R. Canteri
j
Session
XI
с:
CHARACTERIZATION AND MODELING,
Xlc1
On-wafer High-frequency Device Characterization
679
(Invited Paper)
M.C.A.M.
Kooien
Xlc2
Transient Two-dimensional Numerical Analysis of the
Charge-pumping Experiment
687
P.
Habaš,
О.
Heinreichsberger,
S. Selberherr
ХісЗ
Accurate Determination of
Bandgap
Narrowing in
Heavily-doped Epitaxial P-type Silicon
691
M.Y. Ghannam, R.P. Mertens
xxxii Contents
Xlc4
Emitter-base Breakdown: Measurement and Simulation
695
W. Bergner, P.
Packán,
В.
Seidl,
H.
Klose
Xlc5
Explanation of Current Crowding Phenomena Induced by
Impact lonization in Advanced Si Bipolar Transistors by Means
of Electrical Measurements and Light Emission Microscopy
699
P. Pavan,
L
Vendrame, S. Bigliardi, A. Marty,
A. Chantre,
E. Zanoni
ХІсб
Measuring the Drain Voltage Dependent Series Resistance
in
Submicron LDD
MOSFETs
703
J.A.M. Otten, F.M. Klaassen
Xlc7
Small Geometry Effects on the Maximum Cutoff Frequency
of Bipolar Transistors
707
S. Decoutere, L Deferm
Xlc8
Low-frequency Noise in BJTs And HBTs: Influence of
Internal Series Resistances
711
T.G.M. Kleinpenning,
Â.J.
Holden
Xlla1
A
Silicon Technology
for Active High Frequency Circuits
717
K.M.
Strohm, J. Buechler, J.-F.
Luy, F. Schattier
Xlla2
Polyoxide Edge Tunnelling Current Reduction by Top
Corner Rounding
721
L. Haspeslagh, G. Vanhorebeek, L. Determ
ХІІаЗ
Thin High-dielectric T1O2 Films Prepared by Low Pressure
MOCVD
725
N. Rausch,
E.
P.
Butte
Xlla4
Laser Direct Writing of Aluminum Multilevel Interconnects
for VLSI Applications
729
L.M. Treiger,
A.A.
Popov
Contents xxxiii
Xlla5
Integration
of
Vertical/Quasivertical, DMOS, CMOS and
Bipolar Transistors in
a 50V
SIMOX Process
733
J.
Weyers,
H.
Vogt,
M.
Berger,
W.
Mach,
В.
Mütterlein,
M.
Raab,
F. Richter, F. Vogt
ХІІаб
Fabrication
of
Submicron
Microwave Bipolar Transistors by
Direct Write Electron Beam Lithography
737
M.N. Webster,
A.H. Verbruggen,
J.
Romijn, H.F.F.
Jos, P.
M.
A. Moors,
S.
Radelaar
Session
XI
Мэ
:_SOL
I D- S T AT E Ď
E
V
I
CES]
ХНЫ
A Systematic Investigation of N-Channel Delta-doped
MOSFETs Grown by M.B.E.
743
A.G. O Neill, A.C.G. Wood, P. Phillips,
Т.Е.
Whall,
E.H.C.
Parker, A. Gundlach,
S. Taylor
Xllb2
Photon Emission from Sub-micron p-Channel MOSFETs
Biased at High Fields
747
L.
Selmi,
M.
Lanzoni,
S.
Bigliardi,
E. Sangiorgi
ХІІЬЗ
Effect of Electron Heating on RTS in Deep
Submicron
n-MOSFET s
751
Z.M. Shi, J.-P.
Miéville, M. Dutoit
Xllb4
Identification and Characterization of the 1/f Low-frequency
Noise in GaAs MESFETs Grown on InP Substrates
755
M. Chertouk, A. Chovet,
A. Clei
Xllb5
White Noise Study of JFET s on a New Mixed
Rad-hard
Technology
759
E. Delevoye, A. Chovet
ХІІЬб
Microwave Characterization of High Tc Superconducting
YBaCuO Thin Films and Preliminary Device Realization
763
U.C.
Carru, F. Mehri, D. Chauvel, Y. Crosnier, K. Deneffe, J.C. Villegier
xxxiv Contents
Session XII
с:
DEVICE
МО
DE L
I
N Gj
Xlld
Accurate Modeling of Electro-thermal Effects in Silicon
Devices
769
A. Pierantoni, P. Ciampolini, G. Baccarani
ХІІС2
Analysis of Transient Behaviour of Floating Gate EEPROMs
773
A. Concannon, S. Keeney, A, Mathewson,
R. Bez, C.
Lombardi
ХІІсЗ
Accurate
Analysis of Emitter Ballasting in HBT Power
Transistors
777
R. Mezui-Mintsa,
N.
Hassaïne, M.
Riet,
В.
Villeforceix, A. Konczykowska,
S. Vuye, H. Wang
ХІІС4
Influence
of
Short
Channel Effects on Microwave
Performances
of AIGaAs/lnGaAs HEMTs Using
Monte Carlo
Simulation
781
P. Dollfus,
С
Bru, S. Galdin, P. Hesto
ХІІС5
Correlation between Mobility Degradation and Threshold
Voltage Behavior of Subhalf-micron MOSFETs
785
H.-J. Wildau, H.
Bernt,
D.
Friedrich,
W.
Seifert,
P. Staudt-Fischbach,
H.G.
Wagemann, W. Windbracke
ХІІсб
The Efficiënt
Simulation of Point-defect Diffusion by an
Adaptive Multigrid Method
789
D.
Pantić,
S.
Mijalković,
N.
Stojadinović
Session
Xlii
a: SILICON-ON-INSULATOR
Xlllai
Trends in
Silicon-on-lnsulator Technology
795
(Invited
Paper)
J.-P.
Colinge
Xllla2
Physics and
Performances
of Accumulation-mode
SOI
p-MOSFET s from Low (77K) to High (150-320°C)
Temperatures
803
D. Flandre,
A. Terao, T. Loo, J.-P.
Colinge
Contents xxxv
ХІІІаЗ
Investigation of the Influence of the Film Thickness in
Accumulation-mode Fully-depleted
SIMOX
MOSFET s
807
O. Faynot, A.-J.
Auberton-Hervé, S. Cristoloveanu
Xllla4
Analysis of the Latch Phenomenon in Thin Film SOI
MOSFET s as a Function of Temperature
811
F.
Balestra
ХІІІаб
Characteristics of nMOS/GAA (Gate-AII-Around) Transistors
near Threshold
815
P. Francis, A. Terao, D.
Flandre, F.
Van
de Wiele
ХІІІаб
Analysis of Geometric Charge-Pumping Components in a
Thin-Film SOI Device
819
O. Heinreichsberger, P. HabaS, S.Selberherr
Xllla7
Correlation between Spectroscopic Reflectrometry and
Electrical Measurements of
SIMOX SOI
Film Thickness
823
P. Smeys, U.
Magnusson,
J.
P.
Colinge
ХІІІаб
SOI Material Properties Determined by Electrical
Characterization
827
P. Rai-Choudhury, R.J. Hillard, J.M. Heddleson, S.R. Weinzierl, T. Abe,
P.
Karulkar,
M.
Pawlik
Г
Xli
lb:
LÖ
wT
ËM
PE
RYTÍŘE
DE VICE Si
XIIIM
A
Survey of
MOS
Device Physics for low Temperature
Electronics
833
(Invited Paper)
G. Ghibaudo, F.
Balestra,
A. Emrani
Xlllb2
SiGe-Base Bipolar Transistors for Cryogenic BiCMOS
Applications
841
(Invited Paper)
J.D. Cressler
ХІІІЬЗ
Base Profile Tail Effects on the Low Temperature Operation
of Silicon Bipolar Transistors
849
N.
Degors,
A. Chantre,
A. Nouailhat
xxxvi Contents
Xlllb4
Electron
Heating and
Quantum Transport in Deep
Submicrometer n-MOSFET
at Low Temperature and
High Magnetic Field
853
J.P.
Miéville, T. Ouisse, S. Cristoloveanu,
N.
Revii,
Z.M.
Shi,
M. Dutoit
Xlllb5
Low Temperature Behaviour ot
Submicron
Accumulation
Mode p-Channel SOI MOSFETs
857
A.L.P. Rotondaro, U.
Magnusson,
E. Simoen,
С.
Claeys, J.-P.
Colinge
ХІІІЬб
Cryogenic Behaviour of
Ultrashort Gate
AIGaAs/GaAs and
Pseudomorphic AIGaAs/lnGaAs/GaAs HEMTs
861
P. Crozat, D.
Bouchon, A. de
Lustrac, F.
Aniel,
Y.
Jin,
R.
Adde, G.
Vemet,
Y.
Jin,
В.
Etienne, H. Launois, M.
Van Hove,
W.
De Raedt, M. Van Rossum
Xlllbľ
Experimental Determination of Selfheating in Silicon
Resistors Operated at Cryogenic Temperatures
865
E.A.
Gutiérrez-D.,
L.
Deferm,
S. Decoutere, G. Declerck
Session
XIII
c: QUANTUM AND RESONANCE DEVICES
Xllld
New Developments in Quantum Heterostructures
871
(Invited Paper)
C.
Weisbuch
ХІІІС2
Improved Triple Resonant Tunneling Diodes using
InxGai-xAs/GaAs/AIAs Strained Layers
879
D.
Lippens,
J.
Nagle,
B. Grimbert,
V.
Sadaune, E. Lheurette,
B. Vinter,
P. Tilmant,
M. François
ХІІІсЗ
Sequential Analysis of Resonant Tunneling Diodes
883
J. Genoe,
С
Van Hoof, G. Borghs
Х1ІІС4
Generation of Four Negative Differential Resistance Regions
Using Two Resonant Tunneling Diodes
887
K. Fobelets, J. Genoe, R. Vounckx. G. Borghs
ХІІІС5
Interface Properties of Strained InGaAs/lnP Quantum Wells
Grown by LP-MOVPE
891
R.
Schwedler,
В.
Gallman,
К.
Wolter,
Α.
Kohl,
Κ.
Leo,
Η.
Kurz,
S. Juillaguet, J. Camassel, J. Laurenti, F.H.
Baumann
Contents
ХІІІСб
Electro-optic Characterization of InGaAs/lnP MQW p-i-n
Modulator
Structures
895
R.
Schwedler,
H. Mikkelsen, R. Kersting, D.
Laschet,
A.
Kohl,
K.
Wolter,
K.
Leo,
H. Kurz
Xlllcľ
Self-consistent Modelling of Charge Storage Effects in
Resonant Tunnel Diodes
899
R.
Redhammer, D.W.E. Allsopp
XlltcS
High-speed Integrated Quantum Well Self-electrooptic
Effect Device
903
V.!. Toistikhin
Session
XIV
a: PLENARY INVITED PAPERS
XlVal
Quantum electron and Optoelectronic Devices
909
(Invited Paper)
F. Capasso
XIVa2
Two-dimensional MOSFET Simulation by means of a Multi¬
dimensional Spherical Harmonics Expansion of the
Boltzmann Transport Equation
917
(Invited Paper)
A. Gnudi. D. Ventura. G. Baccarani. F. Odeh
AUTHOR INDEX
925
|
| any_adam_object | 1 |
| building | Verbundindex |
| bvnumber | BV009126362 |
| callnumber-first | T - Technology |
| callnumber-label | TK7871 |
| callnumber-raw | TK7871.85 |
| callnumber-search | TK7871.85 |
| callnumber-sort | TK 47871.85 |
| callnumber-subject | TK - Electrical and Nuclear Engineering |
| classification_tum | ELT 340f |
| ctrlnum | (OCoLC)26362235 (DE-599)BVBBV009126362 |
| dewey-full | 621.3815/2 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.3815/2 |
| dewey-search | 621.3815/2 |
| dewey-sort | 3621.3815 12 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Conference Proceeding Book |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01935nam a2200457 c 4500</leader><controlfield tag="001">BV009126362</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20121123 </controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">940311s1992 ad|| |||| 10||| eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">0444894780</subfield><subfield code="9">0-444-89478-0</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)26362235</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV009126362</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakddb</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-91</subfield><subfield code="a">DE-83</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">TK7871.85</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">621.3815/2</subfield><subfield code="2">20</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">ELT 340f</subfield><subfield code="2">stub</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Solid state device research 92</subfield><subfield code="b">proceedings of the 22nd European Solid State Device Research Conference ESSDERC '92, 14 - 17 September 1992, Leuven, Belgium</subfield><subfield code="c">ESSDERC '92. Ed. by H. E. Maes ...</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Amsterdam [u.a.]</subfield><subfield code="b">Elsevier</subfield><subfield code="c">1992</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">XXXVII, 931 S.</subfield><subfield code="b">Ill., graph. Darst.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Aus: Microelectronic engineering ; 19</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Semiconductors</subfield><subfield code="v">Congresses</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Solid state electronics</subfield><subfield code="v">Congresses</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleiterbauelement</subfield><subfield code="0">(DE-588)4113826-0</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Festkörperbauelement</subfield><subfield code="0">(DE-588)4154179-0</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Mikroelektronik</subfield><subfield code="0">(DE-588)4039207-7</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="655" ind1=" " ind2="7"><subfield code="0">(DE-588)1071861417</subfield><subfield code="a">Konferenzschrift</subfield><subfield code="y">1992</subfield><subfield code="z">Löwen</subfield><subfield code="2">gnd-content</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Mikroelektronik</subfield><subfield code="0">(DE-588)4039207-7</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Halbleiterbauelement</subfield><subfield code="0">(DE-588)4113826-0</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="1" ind2="0"><subfield code="a">Festkörperbauelement</subfield><subfield code="0">(DE-588)4154179-0</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Maes, H. E.</subfield><subfield code="e">Sonstige</subfield><subfield code="4">oth</subfield></datafield><datafield tag="711" ind1="2" ind2=" "><subfield code="a">ESSDERC</subfield><subfield code="n">22</subfield><subfield code="d">1992</subfield><subfield code="c">Löwen</subfield><subfield code="j">Sonstige</subfield><subfield code="0">(DE-588)5075220-0</subfield><subfield code="4">oth</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="m">Digitalisierung TU Muenchen</subfield><subfield code="q">application/pdf</subfield><subfield code="u">http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=006048992&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA</subfield><subfield code="3">Inhaltsverzeichnis</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-006048992</subfield></datafield></record></collection> |
| genre | (DE-588)1071861417 Konferenzschrift 1992 Löwen gnd-content |
| genre_facet | Konferenzschrift 1992 Löwen |
| id | DE-604.BV009126362 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T17:31:25Z |
| institution | BVB |
| institution_GND | (DE-588)5075220-0 |
| isbn | 0444894780 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-006048992 |
| oclc_num | 26362235 |
| open_access_boolean | |
| owner | DE-91 DE-BY-TUM DE-83 |
| owner_facet | DE-91 DE-BY-TUM DE-83 |
| physical | XXXVII, 931 S. Ill., graph. Darst. |
| publishDate | 1992 |
| publishDateSearch | 1992 |
| publishDateSort | 1992 |
| publisher | Elsevier |
| record_format | marc |
| spelling | Solid state device research 92 proceedings of the 22nd European Solid State Device Research Conference ESSDERC '92, 14 - 17 September 1992, Leuven, Belgium ESSDERC '92. Ed. by H. E. Maes ... Amsterdam [u.a.] Elsevier 1992 XXXVII, 931 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Aus: Microelectronic engineering ; 19 Semiconductors Congresses Solid state electronics Congresses Halbleiterbauelement (DE-588)4113826-0 gnd rswk-swf Festkörperbauelement (DE-588)4154179-0 gnd rswk-swf Mikroelektronik (DE-588)4039207-7 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 1992 Löwen gnd-content Mikroelektronik (DE-588)4039207-7 s Halbleiterbauelement (DE-588)4113826-0 s DE-604 Festkörperbauelement (DE-588)4154179-0 s Maes, H. E. Sonstige oth ESSDERC 22 1992 Löwen Sonstige (DE-588)5075220-0 oth Digitalisierung TU Muenchen application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=006048992&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Solid state device research 92 proceedings of the 22nd European Solid State Device Research Conference ESSDERC '92, 14 - 17 September 1992, Leuven, Belgium Semiconductors Congresses Solid state electronics Congresses Halbleiterbauelement (DE-588)4113826-0 gnd Festkörperbauelement (DE-588)4154179-0 gnd Mikroelektronik (DE-588)4039207-7 gnd |
| subject_GND | (DE-588)4113826-0 (DE-588)4154179-0 (DE-588)4039207-7 (DE-588)1071861417 |
| title | Solid state device research 92 proceedings of the 22nd European Solid State Device Research Conference ESSDERC '92, 14 - 17 September 1992, Leuven, Belgium |
| title_auth | Solid state device research 92 proceedings of the 22nd European Solid State Device Research Conference ESSDERC '92, 14 - 17 September 1992, Leuven, Belgium |
| title_exact_search | Solid state device research 92 proceedings of the 22nd European Solid State Device Research Conference ESSDERC '92, 14 - 17 September 1992, Leuven, Belgium |
| title_full | Solid state device research 92 proceedings of the 22nd European Solid State Device Research Conference ESSDERC '92, 14 - 17 September 1992, Leuven, Belgium ESSDERC '92. Ed. by H. E. Maes ... |
| title_fullStr | Solid state device research 92 proceedings of the 22nd European Solid State Device Research Conference ESSDERC '92, 14 - 17 September 1992, Leuven, Belgium ESSDERC '92. Ed. by H. E. Maes ... |
| title_full_unstemmed | Solid state device research 92 proceedings of the 22nd European Solid State Device Research Conference ESSDERC '92, 14 - 17 September 1992, Leuven, Belgium ESSDERC '92. Ed. by H. E. Maes ... |
| title_short | Solid state device research 92 |
| title_sort | solid state device research 92 proceedings of the 22nd european solid state device research conference essderc 92 14 17 september 1992 leuven belgium |
| title_sub | proceedings of the 22nd European Solid State Device Research Conference ESSDERC '92, 14 - 17 September 1992, Leuven, Belgium |
| topic | Semiconductors Congresses Solid state electronics Congresses Halbleiterbauelement (DE-588)4113826-0 gnd Festkörperbauelement (DE-588)4154179-0 gnd Mikroelektronik (DE-588)4039207-7 gnd |
| topic_facet | Semiconductors Congresses Solid state electronics Congresses Halbleiterbauelement Festkörperbauelement Mikroelektronik Konferenzschrift 1992 Löwen |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=006048992&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT maeshe solidstatedeviceresearch92proceedingsofthe22ndeuropeansolidstatedeviceresearchconferenceessderc921417september1992leuvenbelgium AT essderclowen solidstatedeviceresearch92proceedingsofthe22ndeuropeansolidstatedeviceresearchconferenceessderc921417september1992leuvenbelgium |