Charge trapping near the Si SiO2 interface in semiconductor devices:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
1981
|
| Schlagworte: | |
| Beschreibung: | Groningen, Diss. |
| Beschreibung: | 160 S. zahlr. graph. Darst. |
Internformat
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| 245 | 1 | 0 | |a Charge trapping near the Si SiO2 interface in semiconductor devices |
| 264 | 1 | |c 1981 | |
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| 650 | 7 | |a Halbleiterbauelement |2 swd | |
| 650 | 7 | |a Silicium |2 swd | |
| 650 | 7 | |a Siliciumdioxid |2 swd | |
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Datensatz im Suchindex
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| author | Hillen, Michiel W. |
| author_facet | Hillen, Michiel W. |
| author_role | aut |
| author_sort | Hillen, Michiel W. |
| author_variant | m w h mw mwh |
| building | Verbundindex |
| bvnumber | BV009065621 |
| ctrlnum | (OCoLC)45936773 (DE-599)BVBBV009065621 |
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| genre_facet | Hochschulschrift |
| id | DE-604.BV009065621 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T17:30:22Z |
| institution | BVB |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-006004035 |
| oclc_num | 45936773 |
| open_access_boolean | |
| owner | DE-29T |
| owner_facet | DE-29T |
| physical | 160 S. zahlr. graph. Darst. |
| publishDate | 1981 |
| publishDateSearch | 1981 |
| publishDateSort | 1981 |
| record_format | marc |
| spelling | Hillen, Michiel W. Verfasser aut Charge trapping near the Si SiO2 interface in semiconductor devices 1981 160 S. zahlr. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Groningen, Diss. Grenzschicht swd Halbleiterbauelement swd Silicium swd Siliciumdioxid swd Grenzschicht (DE-588)4022005-9 gnd rswk-swf Silicium (DE-588)4077445-4 gnd rswk-swf Siliciumdioxid (DE-588)4077447-8 gnd rswk-swf Halbleiterbauelement (DE-588)4113826-0 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Halbleiterbauelement (DE-588)4113826-0 s Silicium (DE-588)4077445-4 s Siliciumdioxid (DE-588)4077447-8 s Grenzschicht (DE-588)4022005-9 s DE-604 |
| spellingShingle | Hillen, Michiel W. Charge trapping near the Si SiO2 interface in semiconductor devices Grenzschicht swd Halbleiterbauelement swd Silicium swd Siliciumdioxid swd Grenzschicht (DE-588)4022005-9 gnd Silicium (DE-588)4077445-4 gnd Siliciumdioxid (DE-588)4077447-8 gnd Halbleiterbauelement (DE-588)4113826-0 gnd |
| subject_GND | (DE-588)4022005-9 (DE-588)4077445-4 (DE-588)4077447-8 (DE-588)4113826-0 (DE-588)4113937-9 |
| title | Charge trapping near the Si SiO2 interface in semiconductor devices |
| title_auth | Charge trapping near the Si SiO2 interface in semiconductor devices |
| title_exact_search | Charge trapping near the Si SiO2 interface in semiconductor devices |
| title_full | Charge trapping near the Si SiO2 interface in semiconductor devices |
| title_fullStr | Charge trapping near the Si SiO2 interface in semiconductor devices |
| title_full_unstemmed | Charge trapping near the Si SiO2 interface in semiconductor devices |
| title_short | Charge trapping near the Si SiO2 interface in semiconductor devices |
| title_sort | charge trapping near the si sio2 interface in semiconductor devices |
| topic | Grenzschicht swd Halbleiterbauelement swd Silicium swd Siliciumdioxid swd Grenzschicht (DE-588)4022005-9 gnd Silicium (DE-588)4077445-4 gnd Siliciumdioxid (DE-588)4077447-8 gnd Halbleiterbauelement (DE-588)4113826-0 gnd |
| topic_facet | Grenzschicht Halbleiterbauelement Silicium Siliciumdioxid Hochschulschrift |
| work_keys_str_mv | AT hillenmichielw chargetrappingnearthesisio2interfaceinsemiconductordevices |