Contribution a l'étude de l'effet tunnel dans les semiconducteurs:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Abschlussarbeit Buch |
| Sprache: | French |
| Veröffentlicht: |
Eindhoven
1972
|
| Schriftenreihe: | Philips' Gloeilampenfabrieken <Eindhoven>: Philips research reports / Supplements.
1972,6 |
| Schlagworte: | |
| Beschreibung: | 109 S. zahlr. graph. Darst. |
Internformat
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| 502 | |a Zugl.: Paris, Univ., Diss., 1972 | ||
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| 650 | 4 | |a Tunneling (Physics) | |
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Datensatz im Suchindex
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| author | Schréder, G. |
| author_facet | Schréder, G. |
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| dewey-sort | 3621.38152 |
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| genre_facet | Hochschulschrift |
| id | DE-604.BV009061864 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T17:30:17Z |
| institution | BVB |
| language | French |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-006000558 |
| oclc_num | 1126673 |
| open_access_boolean | |
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| owner_facet | DE-29T DE-355 DE-BY-UBR DE-91 DE-BY-TUM DE-83 DE-188 |
| physical | 109 S. zahlr. graph. Darst. |
| psigel | TUB-nveb |
| publishDate | 1972 |
| publishDateSearch | 1972 |
| publishDateSort | 1972 |
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| series2 | Philips' Gloeilampenfabrieken <Eindhoven>: Philips research reports / Supplements. |
| spelling | Schréder, G. Verfasser aut Contribution a l'étude de l'effet tunnel dans les semiconducteurs Eindhoven 1972 109 S. zahlr. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Philips' Gloeilampenfabrieken <Eindhoven>: Philips research reports / Supplements. 1972,6 Zugl.: Paris, Univ., Diss., 1972 Semiconductors Tunneling (Physics) Halbleiter (DE-588)4022993-2 gnd rswk-swf Tunneleffekt (DE-588)4136216-0 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Tunneleffekt (DE-588)4136216-0 s DE-604 Halbleiter (DE-588)4022993-2 s 1\p DE-604 Supplements. Philips' Gloeilampenfabrieken <Eindhoven>: Philips research reports 1972,6 (DE-604)BV021853844 1972,6 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Schréder, G. Contribution a l'étude de l'effet tunnel dans les semiconducteurs Semiconductors Tunneling (Physics) Halbleiter (DE-588)4022993-2 gnd Tunneleffekt (DE-588)4136216-0 gnd |
| subject_GND | (DE-588)4022993-2 (DE-588)4136216-0 (DE-588)4113937-9 |
| title | Contribution a l'étude de l'effet tunnel dans les semiconducteurs |
| title_auth | Contribution a l'étude de l'effet tunnel dans les semiconducteurs |
| title_exact_search | Contribution a l'étude de l'effet tunnel dans les semiconducteurs |
| title_full | Contribution a l'étude de l'effet tunnel dans les semiconducteurs |
| title_fullStr | Contribution a l'étude de l'effet tunnel dans les semiconducteurs |
| title_full_unstemmed | Contribution a l'étude de l'effet tunnel dans les semiconducteurs |
| title_short | Contribution a l'étude de l'effet tunnel dans les semiconducteurs |
| title_sort | contribution a l etude de l effet tunnel dans les semiconducteurs |
| topic | Semiconductors Tunneling (Physics) Halbleiter (DE-588)4022993-2 gnd Tunneleffekt (DE-588)4136216-0 gnd |
| topic_facet | Semiconductors Tunneling (Physics) Halbleiter Tunneleffekt Hochschulschrift |
| volume_link | (DE-604)BV021853844 |
| work_keys_str_mv | AT schrederg contributionaletudedeleffettunneldanslessemiconducteurs |