Electrical behaviour of defects at a thermally oxidized silicon surface:
Saved in:
| Main Author: | |
|---|---|
| Format: | Book |
| Language: | English |
| Published: |
Eindhoven
Philips
1970
|
| Series: | Philips' Gloeilampenfabrieken <Eindhoven>: Philips research reports / Supplements
1970,6 |
| Subjects: | |
| Item Description: | Zugl.: Eindhoven, Techn. Univ., Diss. |
| Physical Description: | 93 S. zahlr. graph. Darst. |
Staff View
MARC
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| 245 | 1 | 0 | |a Electrical behaviour of defects at a thermally oxidized silicon surface |c M. V. Whelan |
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| 500 | |a Zugl.: Eindhoven, Techn. Univ., Diss. | ||
| 650 | 4 | |a Crystals |x Defects | |
| 650 | 4 | |a Electricity | |
| 650 | 4 | |a Silica | |
| 650 | 4 | |a Silicon | |
| 650 | 4 | |a Silicon crystals |x Electric properties | |
| 650 | 0 | 7 | |a Oberfläche |0 (DE-588)4042907-6 |2 gnd |9 rswk-swf |
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| 650 | 0 | 7 | |a MOS |0 (DE-588)4130209-6 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Störstelle |0 (DE-588)4193400-3 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Gitterbaufehler |0 (DE-588)4125030-8 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Oxidation |0 (DE-588)4137187-2 |2 gnd |9 rswk-swf |
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Record in the Search Index
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| any_adam_object | |
| author | Whelan, Maurice V. |
| author_facet | Whelan, Maurice V. |
| author_role | aut |
| author_sort | Whelan, Maurice V. |
| author_variant | m v w mv mvw |
| building | Verbundindex |
| bvnumber | BV009061843 |
| callnumber-first | Q - Science |
| callnumber-label | Q1 |
| callnumber-raw | Q1 QD939 |
| callnumber-search | Q1 QD939 |
| callnumber-sort | Q 11 |
| callnumber-subject | Q - General Science |
| ctrlnum | (OCoLC)532699 (DE-599)BVBBV009061843 |
| dewey-full | 548/.85 508/.1 |
| dewey-hundreds | 500 - Natural sciences and mathematics |
| dewey-ones | 548 - Crystallography 508 - Natural history |
| dewey-raw | 548/.85 508/.1 |
| dewey-search | 548/.85 508/.1 |
| dewey-sort | 3548 285 |
| dewey-tens | 540 - Chemistry and allied sciences 500 - Natural sciences and mathematics |
| discipline | Chemie / Pharmazie Allgemeine Naturwissenschaft |
| format | Book |
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| genre | (DE-588)4113937-9 Hochschulschrift gnd-content |
| genre_facet | Hochschulschrift |
| id | DE-604.BV009061843 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T17:30:17Z |
| institution | BVB |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-006000537 |
| oclc_num | 532699 |
| open_access_boolean | |
| owner | DE-29T DE-355 DE-BY-UBR DE-91 DE-BY-TUM DE-83 DE-210 |
| owner_facet | DE-29T DE-355 DE-BY-UBR DE-91 DE-BY-TUM DE-83 DE-210 |
| physical | 93 S. zahlr. graph. Darst. |
| psigel | TUB-nvmb |
| publishDate | 1970 |
| publishDateSearch | 1970 |
| publishDateSort | 1970 |
| publisher | Philips |
| record_format | marc |
| series2 | Philips' Gloeilampenfabrieken <Eindhoven>: Philips research reports / Supplements |
| spelling | Whelan, Maurice V. Verfasser aut Electrical behaviour of defects at a thermally oxidized silicon surface M. V. Whelan Eindhoven Philips 1970 93 S. zahlr. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Philips' Gloeilampenfabrieken <Eindhoven>: Philips research reports / Supplements 1970,6 Zugl.: Eindhoven, Techn. Univ., Diss. Crystals Defects Electricity Silica Silicon Silicon crystals Electric properties Oberfläche (DE-588)4042907-6 gnd rswk-swf Betriebsverhalten (DE-588)4138142-7 gnd rswk-swf Silicium (DE-588)4077445-4 gnd rswk-swf MOS (DE-588)4130209-6 gnd rswk-swf Störstelle (DE-588)4193400-3 gnd rswk-swf Gitterbaufehler (DE-588)4125030-8 gnd rswk-swf Oxidation (DE-588)4137187-2 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Silicium (DE-588)4077445-4 s Oberfläche (DE-588)4042907-6 s Oxidation (DE-588)4137187-2 s Gitterbaufehler (DE-588)4125030-8 s DE-604 Störstelle (DE-588)4193400-3 s 1\p DE-604 Betriebsverhalten (DE-588)4138142-7 s 2\p DE-604 MOS (DE-588)4130209-6 s 3\p DE-604 Supplements Philips' Gloeilampenfabrieken <Eindhoven>: Philips research reports 1970,6 (DE-604)BV021853844 1970,6 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 2\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 3\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Whelan, Maurice V. Electrical behaviour of defects at a thermally oxidized silicon surface Crystals Defects Electricity Silica Silicon Silicon crystals Electric properties Oberfläche (DE-588)4042907-6 gnd Betriebsverhalten (DE-588)4138142-7 gnd Silicium (DE-588)4077445-4 gnd MOS (DE-588)4130209-6 gnd Störstelle (DE-588)4193400-3 gnd Gitterbaufehler (DE-588)4125030-8 gnd Oxidation (DE-588)4137187-2 gnd |
| subject_GND | (DE-588)4042907-6 (DE-588)4138142-7 (DE-588)4077445-4 (DE-588)4130209-6 (DE-588)4193400-3 (DE-588)4125030-8 (DE-588)4137187-2 (DE-588)4113937-9 |
| title | Electrical behaviour of defects at a thermally oxidized silicon surface |
| title_auth | Electrical behaviour of defects at a thermally oxidized silicon surface |
| title_exact_search | Electrical behaviour of defects at a thermally oxidized silicon surface |
| title_full | Electrical behaviour of defects at a thermally oxidized silicon surface M. V. Whelan |
| title_fullStr | Electrical behaviour of defects at a thermally oxidized silicon surface M. V. Whelan |
| title_full_unstemmed | Electrical behaviour of defects at a thermally oxidized silicon surface M. V. Whelan |
| title_short | Electrical behaviour of defects at a thermally oxidized silicon surface |
| title_sort | electrical behaviour of defects at a thermally oxidized silicon surface |
| topic | Crystals Defects Electricity Silica Silicon Silicon crystals Electric properties Oberfläche (DE-588)4042907-6 gnd Betriebsverhalten (DE-588)4138142-7 gnd Silicium (DE-588)4077445-4 gnd MOS (DE-588)4130209-6 gnd Störstelle (DE-588)4193400-3 gnd Gitterbaufehler (DE-588)4125030-8 gnd Oxidation (DE-588)4137187-2 gnd |
| topic_facet | Crystals Defects Electricity Silica Silicon Silicon crystals Electric properties Oberfläche Betriebsverhalten Silicium MOS Störstelle Gitterbaufehler Oxidation Hochschulschrift |
| volume_link | (DE-604)BV021853844 |
| work_keys_str_mv | AT whelanmauricev electricalbehaviourofdefectsatathermallyoxidizedsiliconsurface |