Electrical behaviour of defects at a thermally oxidized silicon surface:
Gespeichert in:
1. Verfasser: | |
---|---|
Format: | Buch |
Sprache: | English |
Veröffentlicht: |
Eindhoven
Philips
1970
|
Schriftenreihe: | Philips' Gloeilampenfabrieken <Eindhoven>: Philips research reports / Supplements
1970,6 |
Schlagworte: | |
Beschreibung: | Zugl.: Eindhoven, Techn. Univ., Diss. |
Beschreibung: | 93 S. zahlr. graph. Darst. |
Internformat
MARC
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300 | |a 93 S. |b zahlr. graph. Darst. | ||
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500 | |a Zugl.: Eindhoven, Techn. Univ., Diss. | ||
650 | 4 | |a Crystals |x Defects | |
650 | 4 | |a Electricity | |
650 | 4 | |a Silica | |
650 | 4 | |a Silicon | |
650 | 4 | |a Silicon crystals |x Electric properties | |
650 | 0 | 7 | |a Oberfläche |0 (DE-588)4042907-6 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a Betriebsverhalten |0 (DE-588)4138142-7 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a Silicium |0 (DE-588)4077445-4 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a MOS |0 (DE-588)4130209-6 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a Störstelle |0 (DE-588)4193400-3 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a Gitterbaufehler |0 (DE-588)4125030-8 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a Oxidation |0 (DE-588)4137187-2 |2 gnd |9 rswk-swf |
655 | 7 | |0 (DE-588)4113937-9 |a Hochschulschrift |2 gnd-content | |
689 | 0 | 0 | |a Silicium |0 (DE-588)4077445-4 |D s |
689 | 0 | 1 | |a Oberfläche |0 (DE-588)4042907-6 |D s |
689 | 0 | 2 | |a Oxidation |0 (DE-588)4137187-2 |D s |
689 | 0 | 3 | |a Gitterbaufehler |0 (DE-588)4125030-8 |D s |
689 | 0 | |5 DE-604 | |
689 | 1 | 0 | |a Störstelle |0 (DE-588)4193400-3 |D s |
689 | 1 | |8 1\p |5 DE-604 | |
689 | 2 | 0 | |a Betriebsverhalten |0 (DE-588)4138142-7 |D s |
689 | 2 | |8 2\p |5 DE-604 | |
689 | 3 | 0 | |a MOS |0 (DE-588)4130209-6 |D s |
689 | 3 | |8 3\p |5 DE-604 | |
810 | 2 | |a Supplements |t Philips' Gloeilampenfabrieken <Eindhoven>: Philips research reports |v 1970,6 |w (DE-604)BV021853844 |9 1970,6 | |
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883 | 1 | |8 3\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk |
Datensatz im Suchindex
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any_adam_object | |
author | Whelan, Maurice V. |
author_facet | Whelan, Maurice V. |
author_role | aut |
author_sort | Whelan, Maurice V. |
author_variant | m v w mv mvw |
building | Verbundindex |
bvnumber | BV009061843 |
callnumber-first | Q - Science |
callnumber-label | Q1 |
callnumber-raw | Q1 QD939 |
callnumber-search | Q1 QD939 |
callnumber-sort | Q 11 |
callnumber-subject | Q - General Science |
ctrlnum | (OCoLC)532699 (DE-599)BVBBV009061843 |
dewey-full | 548/.85 508/.1 |
dewey-hundreds | 500 - Natural sciences and mathematics |
dewey-ones | 548 - Crystallography 508 - Natural history |
dewey-raw | 548/.85 508/.1 |
dewey-search | 548/.85 508/.1 |
dewey-sort | 3548 285 |
dewey-tens | 540 - Chemistry and allied sciences 500 - Natural sciences and mathematics |
discipline | Chemie / Pharmazie Allgemeine Naturwissenschaft |
format | Book |
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genre | (DE-588)4113937-9 Hochschulschrift gnd-content |
genre_facet | Hochschulschrift |
id | DE-604.BV009061843 |
illustrated | Illustrated |
indexdate | 2024-07-09T17:30:17Z |
institution | BVB |
language | English |
oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-006000537 |
oclc_num | 532699 |
open_access_boolean | |
owner | DE-29T DE-355 DE-BY-UBR DE-91 DE-BY-TUM DE-83 DE-210 |
owner_facet | DE-29T DE-355 DE-BY-UBR DE-91 DE-BY-TUM DE-83 DE-210 |
physical | 93 S. zahlr. graph. Darst. |
psigel | TUB-nvmb |
publishDate | 1970 |
publishDateSearch | 1970 |
publishDateSort | 1970 |
publisher | Philips |
record_format | marc |
series2 | Philips' Gloeilampenfabrieken <Eindhoven>: Philips research reports / Supplements |
spelling | Whelan, Maurice V. Verfasser aut Electrical behaviour of defects at a thermally oxidized silicon surface M. V. Whelan Eindhoven Philips 1970 93 S. zahlr. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Philips' Gloeilampenfabrieken <Eindhoven>: Philips research reports / Supplements 1970,6 Zugl.: Eindhoven, Techn. Univ., Diss. Crystals Defects Electricity Silica Silicon Silicon crystals Electric properties Oberfläche (DE-588)4042907-6 gnd rswk-swf Betriebsverhalten (DE-588)4138142-7 gnd rswk-swf Silicium (DE-588)4077445-4 gnd rswk-swf MOS (DE-588)4130209-6 gnd rswk-swf Störstelle (DE-588)4193400-3 gnd rswk-swf Gitterbaufehler (DE-588)4125030-8 gnd rswk-swf Oxidation (DE-588)4137187-2 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Silicium (DE-588)4077445-4 s Oberfläche (DE-588)4042907-6 s Oxidation (DE-588)4137187-2 s Gitterbaufehler (DE-588)4125030-8 s DE-604 Störstelle (DE-588)4193400-3 s 1\p DE-604 Betriebsverhalten (DE-588)4138142-7 s 2\p DE-604 MOS (DE-588)4130209-6 s 3\p DE-604 Supplements Philips' Gloeilampenfabrieken <Eindhoven>: Philips research reports 1970,6 (DE-604)BV021853844 1970,6 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 2\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 3\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
spellingShingle | Whelan, Maurice V. Electrical behaviour of defects at a thermally oxidized silicon surface Crystals Defects Electricity Silica Silicon Silicon crystals Electric properties Oberfläche (DE-588)4042907-6 gnd Betriebsverhalten (DE-588)4138142-7 gnd Silicium (DE-588)4077445-4 gnd MOS (DE-588)4130209-6 gnd Störstelle (DE-588)4193400-3 gnd Gitterbaufehler (DE-588)4125030-8 gnd Oxidation (DE-588)4137187-2 gnd |
subject_GND | (DE-588)4042907-6 (DE-588)4138142-7 (DE-588)4077445-4 (DE-588)4130209-6 (DE-588)4193400-3 (DE-588)4125030-8 (DE-588)4137187-2 (DE-588)4113937-9 |
title | Electrical behaviour of defects at a thermally oxidized silicon surface |
title_auth | Electrical behaviour of defects at a thermally oxidized silicon surface |
title_exact_search | Electrical behaviour of defects at a thermally oxidized silicon surface |
title_full | Electrical behaviour of defects at a thermally oxidized silicon surface M. V. Whelan |
title_fullStr | Electrical behaviour of defects at a thermally oxidized silicon surface M. V. Whelan |
title_full_unstemmed | Electrical behaviour of defects at a thermally oxidized silicon surface M. V. Whelan |
title_short | Electrical behaviour of defects at a thermally oxidized silicon surface |
title_sort | electrical behaviour of defects at a thermally oxidized silicon surface |
topic | Crystals Defects Electricity Silica Silicon Silicon crystals Electric properties Oberfläche (DE-588)4042907-6 gnd Betriebsverhalten (DE-588)4138142-7 gnd Silicium (DE-588)4077445-4 gnd MOS (DE-588)4130209-6 gnd Störstelle (DE-588)4193400-3 gnd Gitterbaufehler (DE-588)4125030-8 gnd Oxidation (DE-588)4137187-2 gnd |
topic_facet | Crystals Defects Electricity Silica Silicon Silicon crystals Electric properties Oberfläche Betriebsverhalten Silicium MOS Störstelle Gitterbaufehler Oxidation Hochschulschrift |
volume_link | (DE-604)BV021853844 |
work_keys_str_mv | AT whelanmauricev electricalbehaviourofdefectsatathermallyoxidizedsiliconsurface |