MOS field-effect transistors and integrated circuits:
Saved in:
| Main Author: | |
|---|---|
| Format: | Book |
| Language: | English |
| Published: |
New York
Wiley
1973
|
| Subjects: | |
| Physical Description: | IX, 259 S. |
Staff View
MARC
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| 650 | 4 | |a Transistors à effet de champs | |
| 650 | 4 | |a Field-effect transistors | |
| 650 | 4 | |a Integrated circuits | |
| 650 | 4 | |a Metal oxide semiconductors | |
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Record in the Search Index
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|---|---|
| any_adam_object | |
| author | Richman, Paul |
| author_facet | Richman, Paul |
| author_role | aut |
| author_sort | Richman, Paul |
| author_variant | p r pr |
| building | Verbundindex |
| bvnumber | BV009053992 |
| callnumber-first | T - Technology |
| callnumber-label | TK7871 |
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| callnumber-search | TK7871.85 |
| callnumber-sort | TK 47871.85 |
| callnumber-subject | TK - Electrical and Nuclear Engineering |
| ctrlnum | (OCoLC)662199 (DE-599)BVBBV009053992 |
| dewey-full | 621.381/71 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.381/71 |
| dewey-search | 621.381/71 |
| dewey-sort | 3621.381 271 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Book |
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| id | DE-604.BV009053992 |
| illustrated | Not Illustrated |
| indexdate | 2024-07-09T17:29:20Z |
| institution | BVB |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-005993347 |
| oclc_num | 662199 |
| open_access_boolean | |
| owner | DE-91 DE-BY-TUM DE-706 |
| owner_facet | DE-91 DE-BY-TUM DE-706 |
| physical | IX, 259 S. |
| publishDate | 1973 |
| publishDateSearch | 1973 |
| publishDateSort | 1973 |
| publisher | Wiley |
| record_format | marc |
| spelling | Richman, Paul Verfasser aut MOS field-effect transistors and integrated circuits New York Wiley 1973 IX, 259 S. txt rdacontent n rdamedia nc rdacarrier Circuits intégrés MOS (Électronique) Transistors à effet de champs Field-effect transistors Integrated circuits Metal oxide semiconductors MOS (DE-588)4130209-6 gnd rswk-swf MOS (DE-588)4130209-6 s DE-604 |
| spellingShingle | Richman, Paul MOS field-effect transistors and integrated circuits Circuits intégrés MOS (Électronique) Transistors à effet de champs Field-effect transistors Integrated circuits Metal oxide semiconductors MOS (DE-588)4130209-6 gnd |
| subject_GND | (DE-588)4130209-6 |
| title | MOS field-effect transistors and integrated circuits |
| title_auth | MOS field-effect transistors and integrated circuits |
| title_exact_search | MOS field-effect transistors and integrated circuits |
| title_full | MOS field-effect transistors and integrated circuits |
| title_fullStr | MOS field-effect transistors and integrated circuits |
| title_full_unstemmed | MOS field-effect transistors and integrated circuits |
| title_short | MOS field-effect transistors and integrated circuits |
| title_sort | mos field effect transistors and integrated circuits |
| topic | Circuits intégrés MOS (Électronique) Transistors à effet de champs Field-effect transistors Integrated circuits Metal oxide semiconductors MOS (DE-588)4130209-6 gnd |
| topic_facet | Circuits intégrés MOS (Électronique) Transistors à effet de champs Field-effect transistors Integrated circuits Metal oxide semiconductors MOS |
| work_keys_str_mv | AT richmanpaul mosfieldeffecttransistorsandintegratedcircuits |