MOS field-effect transistors and integrated circuits:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
New York
Wiley
1973
|
| Schlagworte: | |
| Beschreibung: | IX, 259 S. |
Internformat
MARC
| LEADER | 00000nam a2200000 c 4500 | ||
|---|---|---|---|
| 001 | BV009053992 | ||
| 003 | DE-604 | ||
| 005 | 20030325 | ||
| 007 | t | ||
| 008 | 940227s1973 |||| 00||| eng d | ||
| 035 | |a (OCoLC)662199 | ||
| 035 | |a (DE-599)BVBBV009053992 | ||
| 040 | |a DE-604 |b ger |e rakddb | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-91 |a DE-706 | ||
| 050 | 0 | |a TK7871.85 | |
| 082 | 0 | |a 621.381/71 | |
| 100 | 1 | |a Richman, Paul |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a MOS field-effect transistors and integrated circuits |
| 264 | 1 | |a New York |b Wiley |c 1973 | |
| 300 | |a IX, 259 S. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 650 | 4 | |a Circuits intégrés | |
| 650 | 4 | |a MOS (Électronique) | |
| 650 | 4 | |a Transistors à effet de champs | |
| 650 | 4 | |a Field-effect transistors | |
| 650 | 4 | |a Integrated circuits | |
| 650 | 4 | |a Metal oxide semiconductors | |
| 650 | 0 | 7 | |a MOS |0 (DE-588)4130209-6 |2 gnd |9 rswk-swf |
| 689 | 0 | 0 | |a MOS |0 (DE-588)4130209-6 |D s |
| 689 | 0 | |5 DE-604 | |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-005993347 | ||
Datensatz im Suchindex
| _version_ | 1804123410425446400 |
|---|---|
| any_adam_object | |
| author | Richman, Paul |
| author_facet | Richman, Paul |
| author_role | aut |
| author_sort | Richman, Paul |
| author_variant | p r pr |
| building | Verbundindex |
| bvnumber | BV009053992 |
| callnumber-first | T - Technology |
| callnumber-label | TK7871 |
| callnumber-raw | TK7871.85 |
| callnumber-search | TK7871.85 |
| callnumber-sort | TK 47871.85 |
| callnumber-subject | TK - Electrical and Nuclear Engineering |
| ctrlnum | (OCoLC)662199 (DE-599)BVBBV009053992 |
| dewey-full | 621.381/71 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.381/71 |
| dewey-search | 621.381/71 |
| dewey-sort | 3621.381 271 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Book |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01055nam a2200373 c 4500</leader><controlfield tag="001">BV009053992</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20030325 </controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">940227s1973 |||| 00||| eng d</controlfield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)662199</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV009053992</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakddb</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-91</subfield><subfield code="a">DE-706</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">TK7871.85</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">621.381/71</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Richman, Paul</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">MOS field-effect transistors and integrated circuits</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">New York</subfield><subfield code="b">Wiley</subfield><subfield code="c">1973</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">IX, 259 S.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Circuits intégrés</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">MOS (Électronique)</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Transistors à effet de champs</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Field-effect transistors</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Integrated circuits</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Metal oxide semiconductors</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">MOS</subfield><subfield code="0">(DE-588)4130209-6</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">MOS</subfield><subfield code="0">(DE-588)4130209-6</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-005993347</subfield></datafield></record></collection> |
| id | DE-604.BV009053992 |
| illustrated | Not Illustrated |
| indexdate | 2024-07-09T17:29:20Z |
| institution | BVB |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-005993347 |
| oclc_num | 662199 |
| open_access_boolean | |
| owner | DE-91 DE-BY-TUM DE-706 |
| owner_facet | DE-91 DE-BY-TUM DE-706 |
| physical | IX, 259 S. |
| publishDate | 1973 |
| publishDateSearch | 1973 |
| publishDateSort | 1973 |
| publisher | Wiley |
| record_format | marc |
| spelling | Richman, Paul Verfasser aut MOS field-effect transistors and integrated circuits New York Wiley 1973 IX, 259 S. txt rdacontent n rdamedia nc rdacarrier Circuits intégrés MOS (Électronique) Transistors à effet de champs Field-effect transistors Integrated circuits Metal oxide semiconductors MOS (DE-588)4130209-6 gnd rswk-swf MOS (DE-588)4130209-6 s DE-604 |
| spellingShingle | Richman, Paul MOS field-effect transistors and integrated circuits Circuits intégrés MOS (Électronique) Transistors à effet de champs Field-effect transistors Integrated circuits Metal oxide semiconductors MOS (DE-588)4130209-6 gnd |
| subject_GND | (DE-588)4130209-6 |
| title | MOS field-effect transistors and integrated circuits |
| title_auth | MOS field-effect transistors and integrated circuits |
| title_exact_search | MOS field-effect transistors and integrated circuits |
| title_full | MOS field-effect transistors and integrated circuits |
| title_fullStr | MOS field-effect transistors and integrated circuits |
| title_full_unstemmed | MOS field-effect transistors and integrated circuits |
| title_short | MOS field-effect transistors and integrated circuits |
| title_sort | mos field effect transistors and integrated circuits |
| topic | Circuits intégrés MOS (Électronique) Transistors à effet de champs Field-effect transistors Integrated circuits Metal oxide semiconductors MOS (DE-588)4130209-6 gnd |
| topic_facet | Circuits intégrés MOS (Électronique) Transistors à effet de champs Field-effect transistors Integrated circuits Metal oxide semiconductors MOS |
| work_keys_str_mv | AT richmanpaul mosfieldeffecttransistorsandintegratedcircuits |