Defects in semiconductors I: proceedings of the 1st National Conference on Defects in Semiconductors, held in St. Petersburg, Russia, April 26 - 30, 1992
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| Format: | Tagungsbericht Buch |
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| Sprache: | English |
| Veröffentlicht: |
Aedermannsdorf
Scitec Publ. Ltd.
1993
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| Schriftenreihe: | Diffusion and defect data / A
103/105 |
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| Beschreibung: | Literaturangaben |
| Beschreibung: | 678 S. |
| ISBN: | 0878496661 |
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| 245 | 1 | 0 | |a Defects in semiconductors I |b proceedings of the 1st National Conference on Defects in Semiconductors, held in St. Petersburg, Russia, April 26 - 30, 1992 |c ed. Nikolay T. Bagraev |
| 264 | 1 | |a Aedermannsdorf |b Scitec Publ. Ltd. |c 1993 | |
| 300 | |a 678 S. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 1 | |a Diffusion and defect data / A |v 103/105 | |
| 500 | |a Literaturangaben | ||
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| 700 | 1 | |a Bagraev, Nikolay T. |e Sonstige |4 oth | |
| 711 | 2 | |a National Conference on Defects in Semiconductors |n 1 |d 1992 |c Sankt Petersburg |j Sonstige |0 (DE-588)5138651-3 |4 oth | |
| 810 | 2 | |a A |t Diffusion and defect data |v 103/105 |w (DE-604)BV002354187 |9 103/105 | |
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Datensatz im Suchindex
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| adam_text | TABLE
OF CONTENTS
I. DEFECTS IN HIV COMPOUNDS
Anisotropie
Acceptors Induced in GaAs by Group I Elements
Cu, Ag,
Au:
Properties and Trends
(invited)
A.A.
Gutkin
13
3D-4D-5D Transition and 4F Rare Earth Elements in Ill-V and
II-V Semiconductors as Luminescent Centers and Probes in
Diagnostics of Implanted Layers
V.V. Ushakov and
A.A.
Gippius
25
Symmetry of
VQaTeĄs
Complex in GaAs and its
Reorientation
at Low Temperature
N.S. Averkiev,
A.A.
Gutkin, E.B. Osipov, M.A. Reshchikov
and
V.R.
Sosnovskij
31
Electrodipole Spin Transitions of the Neutral Manganese
Acceptor Mn°Qa in Gallium Arsenide
N.P.
Baran,
V.Ya. Bratus,
V.M.
Maksimenko, A.V. Markov
and Yu.G. Semenov
39
On the Ground State of MnQa Defects in a GaAs: Mn System
S.M. Yakubenya and K.F. Schtel makh
45
Defect Impurity Interaction in Irradiated n-GaAs
F.P. Korshunov, T.A. Prokhorenko, N.A. Sobolev and
E.A. Kudriavtseva
51
Long-Range Effect of Ion Irradiation on the System of
Defects in Indium Phosphide
N.V. Baidus , B.I. Bednyi, T.V. Belich and
D.I.
Tetelbaum
57
Phonon-Impurity Photoconductivity due to Ge Acceptor in
GaAsj.xSbx Alloys
T.Yu. Bilgildeyeva, T.A. Polyanskaya,
A.A.
Kopylov and
A.A.
Shakmaev
61
II. METASTABILITY
The EL2 Center in GaAs: Symmetry and Metastability
(invited)
N.T.
Bagraev
67
Metastable Electronic States Caused by Native Defects and
Ill-Group Impurities in A^B Semiconductors
(invited)
B.A. Akimov and L.I. Ryabova X5
Electric Field Induced Electron Emission from Deep Level
Center in GaAs
E.A.
Bobrova,
G.N.
Galkin, E.I.
Ivanov,
T.B.
Papkova
and
S.O.
Stapeev 1()5
Generation of the EL2 Defect in n-GaAs Irradiated by
High Energy Protons
P.N. Brunkov, S.G. Konnikov and M.M. Sobolev
1 1
Synergetic Photoelectric Phenomena Induced by Associations
of Rare-Earth Metal Impurities with Lattice Defects in Si
and Semiconductors of Type A3B5 and A2Bg
P.M. Karageorgy-Alkalaev, A.Yu.
Leiderman
and
S.Zh. Karazhanov 119
Peculiarities of Display of Multistable Defects in
Relaxation Spectroscopy
V.M.
Siratskü, M.G.
Sosnin,
V.l.
Shakhovtsov,
V.L.
Shindich, L.I. Shpinar and I.I. Yaskovets 125
HI. DEFECTS IN II-VI COMPOUNDS
Spectroscopy of II-VI Compounds Doped with Transition-
Metal Ions
(invited)
A.I. Ryskin
33
Photoionization of the Impurity ion in ZnS:Fe: Influence
of Lattice Relaxation
Y.B. Rosenfeld,
A.I. Ryskin, A.V. Vasil ev and
G.M. Zinger
143
Vibronic Interaction and Luminescence of ZnSe:Cr
A.I. Ryskin, A.V. Vasil ev, V.A. Kremerman and
Yu.B.
Rosenfeld 149
Quenching Centers of Red Luminescence in ZnSe:Te
G. Riiciukaitis, V. Gavryushin, A. Kazlauskas,
V.D. Ryzhikov, R. Baltramiejunas and D. Juodzbalis
157
Dynamic of Electron-Phonon Interaction in ZnSe:Cr Crystals
under
Photoexcitation
in Charge Transfer Band
M.Ph.
Bulaný,
I.I.
Jeru. V.Yu.
Ivanov, A.P.
Stepanenko
andY.E. Zaly
163
Nonlinear Spectroscopy of DA-Centers of Green-Edge-Luminescence
in CdS Crystals. Stepwise Exciton Localization by Isoelectronic
Defects
R. Baltramiejunas, V. Gavryushin, V. Kubertavicius and
G. Raciukaitis 16C>
Superfine Splitting in CdS Doped by Fe
R.P. Vardapetyan, V.D. Kuznetsov, V.A. Kulbachinskii,
S.I. Reyman,
I.V.
Svistunov and S.M. Chudinov
17?
Peculiarities of Spin-Splitting in the Exciton Spectra of
Cdj.xMnxS Crystals in a Magnetic Field
V.G. Abramishvili, A.V.
Komárov, S.M.
Ryabchenko and
Yu.G. Semenov
1
fc I
Excitonic Spectra of Cdt^Fe^e Crystals
S.A.
Permogorov, L.N. Tenishev and T.P. Surkova
1
K
Energy
Stales of
Ni
in
Znj_xMnxSe:Ni
Solid Solutions
S.A.
Permogorov, L.N. Tenishev,
V.l.
Sokolov
and
T.P. Surkova
193
IV. DIFFUSION
Non-Equilibrium Diffusion in Silicon
N.T.
Bagraev, L.E. Klyachkin and
V.L.
Sukhanov
20
I
Non-Equilibrium Phenomena During Impurity Diffusion in
Heavily Doped Silicon
A.O. Konštantínov
215
Diffusion of Gold in Single Crystal Silicon with Growth
Microdefects
V.V. Vysotskaya and S.N. Gorin
22 1
Enhanced Gold Diffusion in Silicon under Intrinsic Point
Defect Flow
S.V.
Koveshnikov, E.B. Yakimov and N.A. Yarykin
227
Defect Formation in the Bulk of Silicon Wafers at the
Heating Upon Internal
Gettering
S.N. Gorin, G.N.
Petrov
and T.M. Tkacheva
233
Impurity Diffusion in Silicon under Strong Interaction
with the Point Defect Clusters
V.l.
Pashkov, V.A. Perevoshchikov and V.D. Skupov
239
Mechanisms of Impurity Diffusion into Pbj_xSnxTe Solid
Solution
J.B. Chesnokova and
Chu
Chor 243
The Effect of Abnormal Ion Electromigration in a Disorder
Media
D. Alimov, V. Goldman and B. Oksengendler
249
V. DEFECTS IN SILICON, GERMANIUM AND Si-Ge ALLOYS
H
States Passivation of Defects and Impurities in Silicon
(invited)
B.N. Mukashev and S.Zh. Tokmoldin
255
Electron Stimulated Defect Reactions in Silicon under
Pulsed Photon Treatment
V.l.
Belyavsky, Yu.A. Kapustin and V.V. Sviridov
265
Piezocapacitance Spectroscopy of Deep Level Centers in
Silicon
A.A.
Lebedev, W.
Ecke
and N.A.
Sultanov
273
Deep Levels of Thermal Defects in High Resistivity Silicon
E.M. Verbitskaya,
A.A.
Gribov, V.K. Eremin, A.M.
Ivanov
and
N.B.
Strokan
277
Capacitance Transient Spectroscopy of Process-Induced
Defects with Deep Levels in
P
-Туре
Silicon
E.V.
Astrová, V.B.
Voronkov and
A.A.
Lebedev 2S3
Radiation
Defect
Formation in Silicon
Doped with Impurities
of the Group IV Transition Metals
L.A. Kazakevich,
V.l.
Kuznetsov, P.F. Lugakov and
A.R. Salmanov 287
Influence Intrinsic Elastic Stresses on the Annealing
Processes of Radiation Defects in Silicon
L.I. Khirunenko, Yu.V. Pomozov,
V.l.
Shakhovtsov,
V.K. Shinkarenko and
V.l.
Yashnik 293
Thermal Broadening of the Absorbtion Lines of Group HI
and V Elements in Single-Crystal Silicon
N.I. Agladze, A.S, Kaminskii and
A.N.
Safonov 2
Interstitial Oxygen in Nature and Monoisotopic Germanium
F.M. Vorobkalo, L.I. Khirunenko,
V.l.
Shakhovtsov and
V.K. Shinkarenko 305
Defect Production in Si:Ge Irradiated by Gamma-Rays at
4.2K,78Kand300K
V.V. Emtsev, V.G. Golubev, P.M. Klinger, G.I. Kropotov
and Yu.V. Shmartsev
311
The Substitutional Reaction in Alloys Sij_xGex
B. Askarov, B. Oksengendler, S. Sokhataliyev, M. Khaitova
and A. Yusupov 3 7
The Defects in Germanium-Silicon Alloys
S.I. Shakhovtsova and M.M. Shvarts 323
The Influence of Current Carriers on Shallow Impurity
Limited Solubility in Semiconductors
I.G. Atabaev 329
New Shape of Inhomogeneously Broadened Resonance Lines
in Semi-Infinite Media: Luminescence of Sm^+ Ions in the
Epitaxial CaF2 Films on Si (111)
N.S. Averkiev, V.S. Vikhnin, N.S.
Sokolov
and
N.L. Yakovlev 335
Hopping Conductivity of Ion-Implanted by Sulfur Silicon
V.A. Kulbachinskii, V.G. Kytin,
A.B.
Timofeev,
A.G. Uliashin, V.V. Abramov, G.A.
Mironova
and
N.V. Shlopak
341
VI. NEGATIVE-L PROPERTIES FOR DEFECTS IN SEMICONDUCTORS
Method and Model for Treating Negative-U Centers in Silicon:
Si:V° and Si:(VH3r
S.S.
Moliver
349
Zn-Related Center in Silicon: Negative-U Properties
N.T.
Bagraev and I.S. Polovtsev
367
VII.
DEFECTS IN IV-VI COMPOUNDS
Resonance
(Quasilocal) States in A*
*» *
Semiconductors
(invited)
V.l.
Kaidanov
387
Superconductivity
in IV-VI Semiconductors
Induced by
Impurity Resonance States
(invited)
V.l.
Kaidanov,
S.A.
Nemov, A.V. Berezin, M.K. Zhitinskaya.
R.V. Parfeniev and D.V. Shamshur
407
The Self-Compensation of Electrical Active Impurity by
Intrinsic Defects in Solid Solutions Pb() 8Sn0,2Te and
pb0,93Sn0,07Se
S.A.
Nemov,
V.l.
Proshin, M.K. Zhitinskaya and
Yu.I. Ravich
417
Tunnel Spectroscopy of Resonance and Metastable Impurity
States in Lead Telluride
V.l.
Kaidanov and
S.A.
Rykov
421
PbTe(Ga) Photoconductivity Spectra in the Far Infrared
A.I. Belogorokhov, I.I. Ivanchik, D.R. Khokhlov and
E.I. Slyn ko
433
Low-Temperature Switching in PbTe<Ga> at High Electric
Fields
B.A. Akimov, A.V.
Albul
and E.B. Bogdanov
437
Localization in Ultrahigh Magnetic Fields in the
Pb|.xSnxTe (In) Alloys
I.I. Ivanchik, D.R. Khokhlov,
A. de Visser
and
A.V. Nikorich
443
Microwave Resonance of the Persistent Photoconductivity in
РО!.хЅпхТе(1п)
Alloys
S.N. Chesnokov,
D.E.
Dolzhenko, I.I. Ivanchik and
D.R. Khokhlov
449
Electrical and Photoelectrical Properties of PbSnTe/PbTeS
Lattice Matched Heterostructure Diodes
V.V. Tetyorkin,
F.F.
Sizov, V.B. Alenberg, S.N. Davidenko
and V.Yu. Chopik
453
Vin.
DISLOCATIONS
Dislocations in Semiconductors as One Dimensional
Electronic Systems
(invited)
V.V. Kveder
461
Dislocation Superlattices Based on Lead Chalcogenides as
HTSC Models
(invited)
O.A.
Mironov, V.V. Zorchenko, A.Yu. Sipatov, A.I. Fedorenko,
O.N. Nashchekina and
S.V.
Chistyakov
473
Metastable
Behavior of Dislocation Charge in Space Charge
Region
E.B. Yakimov and N.A. Yarykin
485
Possibility of Reconstruction of the Concentration Profile
of Point Defects in Crystals by the Method of X-Ray
Interference Diffractometry
Т.Е.
Goureev, A.Yu. Nikulin, P.V.
Petrachen
and
A.A.
Snigirev
491
Anomalously Wide Impurity Atmosphere Near the Dislocation
Slip Plane in Si
V.G. Eremenko and O.V. Trofimov
497
IX. THERMAL DONORS IN SILICON
Oxygen-Related Thermal Donors in Heat-Treated Cz-Si
(invited)
V.V. Emtsev, G.A. Oganesyan and K.
Schmalz 505
Formation and Properties of Thermal Donors Generated by
Prolonged Annealing in Si Crystals with Different Oxygen and
Carbon Contents
(invited)
V.M.
Babich,
N.P.
Baran,
A.A.
Bugai, V.B. Kovalchuk,
V.M.
Maksimenko and
B.D.
Shanina
517
Metastability of Thermal Donors in Silicon: Photo-EPR Study
N.T.
Bagraev
529
Peculiarities of Thermal Donors Generation and Oxygen
Precipitation at
650°C
with Silicon Irrradiated by Neutrons
V.B. Nejmash, Yu.V. Pomozov,
V.l.
Shakhovtsov,
A.N.
Cabaldin, L.R.
Malko
and
V.M.
Tsmots
537
Thermal Donor Formation Affected by Strain Fields Induced
Imperfections of Silicon Crystal Lattice
I.I. Kolkovskii, P.F. Lugakov, V.V. Lukyanitsa and
A.V. Tsikunov
543
X. THEORY
Analytical Approach to the Theory of Transition-Metal
Impurities in Semiconductors
(invited)
N.P.
Ifin
and V.F. Masterov
551
Cluster Approach for Investigation of Semiconductor
Crystals
D.E.
Onopko and A.I. Ryskin
565
Structure of Deep Impurity States of II, III, IV Group
Elements in IV-VI Semiconductors
V.S. Vinogradov
571
Coexistence
of Large and Small Radius Electron States
on Defect and Problem of Charge Photo
-
Transfer in Ruby
(invited)
V.S. Vikhnin
579
Two-Level Correlated Model for Recombination in
y,e
-
Irradiated Silicon
S.M.
Dickmann 5X7
Fluctuation-Slow-Interface-Traps
B.I. Fouks
595
Surface Coulomb Traps
B.I. Fouks and
N.M.
Storonskii
603
Impurity Polarizability in Silicon due to the Magnetic
Degeneracy of Donor States in a Finite Magnetic Field
S.M.
Dickmann
and
D.I.
Sidel nikov
61 1
XI. DEFECTS IN SiC
New Ideas Concerning the Nitrogen Donor States in Noncubic SiC Basing on the High-
Resolution EPR Data
(invited)
B.D.
Shanina, E.N. Kalabukhova, S.N. Lukin and
E.N. Mokhov
619
Definition of the Off-Center Positions Coordinates of Boron
in 6H SiC from High-Resolution EPR Spectra
B.D.
Shanina, E.N. Kalabukhova, S.N. Lukin and
E.N. Mokhov
627
EPR and DLTS of Point Defects in Silicon Carbide Crystals
(invited)
V.A.
Ilin
and V.A. Ballandovich
633
Electronic Structure of Boron in Silicon Carbide
V.Ya. Bratus , N.P.
Baran,
A.A.
Bugai,
A.A.
Klimov,
V.M.
Maksimenko, T.L. Petrenko and V.V. Romanenko
645
EPR of the
Antisite
Defect in Epitaxial Layers of 4H SiC
E.N. Kalabukhova, S.N. Lukin, E.N. Mokhov and
B.D.
Shanina
655
Electron Structure of J1B Impurity in 6H SiC Crystal
Measured by Endor
T.L. Petrenko, V.V. Teslenko and E.N. Mokhov
661
Models of Impurity Boron in Various SiC Polytypes
T.L. Petrenko, V.V. Teslenko and E.N. Mokhov
667
Radiative and Radiationless Recombination Processes in 6H
and 4H SiC Diodes and the Effect of Deep Centers
M.M. Anikin,
A.A.
Lebedev and A.M. Strel chuk
673
AUTHOR INDEX
679
|
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| genre | (DE-588)1071861417 Konferenzschrift 1992 Sankt Petersburg gnd-content |
| genre_facet | Konferenzschrift 1992 Sankt Petersburg |
| id | DE-604.BV009041098 |
| illustrated | Not Illustrated |
| indexdate | 2024-07-09T17:29:06Z |
| institution | BVB |
| institution_GND | (DE-588)5138651-3 |
| isbn | 0878496661 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-005982505 |
| oclc_num | 30887083 |
| open_access_boolean | |
| owner | DE-29T DE-91 DE-BY-TUM DE-703 |
| owner_facet | DE-29T DE-91 DE-BY-TUM DE-703 |
| physical | 678 S. |
| publishDate | 1993 |
| publishDateSearch | 1993 |
| publishDateSort | 1993 |
| publisher | Scitec Publ. Ltd. |
| record_format | marc |
| series2 | Diffusion and defect data / A |
| spelling | Defects in semiconductors I proceedings of the 1st National Conference on Defects in Semiconductors, held in St. Petersburg, Russia, April 26 - 30, 1992 ed. Nikolay T. Bagraev Aedermannsdorf Scitec Publ. Ltd. 1993 678 S. txt rdacontent n rdamedia nc rdacarrier Diffusion and defect data / A 103/105 Literaturangaben Semiconductors Defects Congresses Gitterbaufehler (DE-588)4125030-8 gnd rswk-swf Halbleiter (DE-588)4022993-2 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 1992 Sankt Petersburg gnd-content Halbleiter (DE-588)4022993-2 s Gitterbaufehler (DE-588)4125030-8 s DE-604 Bagraev, Nikolay T. Sonstige oth National Conference on Defects in Semiconductors 1 1992 Sankt Petersburg Sonstige (DE-588)5138651-3 oth A Diffusion and defect data 103/105 (DE-604)BV002354187 103/105 Digitalisierung TU Muenchen application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=005982505&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Defects in semiconductors I proceedings of the 1st National Conference on Defects in Semiconductors, held in St. Petersburg, Russia, April 26 - 30, 1992 Semiconductors Defects Congresses Gitterbaufehler (DE-588)4125030-8 gnd Halbleiter (DE-588)4022993-2 gnd |
| subject_GND | (DE-588)4125030-8 (DE-588)4022993-2 (DE-588)1071861417 |
| title | Defects in semiconductors I proceedings of the 1st National Conference on Defects in Semiconductors, held in St. Petersburg, Russia, April 26 - 30, 1992 |
| title_auth | Defects in semiconductors I proceedings of the 1st National Conference on Defects in Semiconductors, held in St. Petersburg, Russia, April 26 - 30, 1992 |
| title_exact_search | Defects in semiconductors I proceedings of the 1st National Conference on Defects in Semiconductors, held in St. Petersburg, Russia, April 26 - 30, 1992 |
| title_full | Defects in semiconductors I proceedings of the 1st National Conference on Defects in Semiconductors, held in St. Petersburg, Russia, April 26 - 30, 1992 ed. Nikolay T. Bagraev |
| title_fullStr | Defects in semiconductors I proceedings of the 1st National Conference on Defects in Semiconductors, held in St. Petersburg, Russia, April 26 - 30, 1992 ed. Nikolay T. Bagraev |
| title_full_unstemmed | Defects in semiconductors I proceedings of the 1st National Conference on Defects in Semiconductors, held in St. Petersburg, Russia, April 26 - 30, 1992 ed. Nikolay T. Bagraev |
| title_short | Defects in semiconductors I |
| title_sort | defects in semiconductors i proceedings of the 1st national conference on defects in semiconductors held in st petersburg russia april 26 30 1992 |
| title_sub | proceedings of the 1st National Conference on Defects in Semiconductors, held in St. Petersburg, Russia, April 26 - 30, 1992 |
| topic | Semiconductors Defects Congresses Gitterbaufehler (DE-588)4125030-8 gnd Halbleiter (DE-588)4022993-2 gnd |
| topic_facet | Semiconductors Defects Congresses Gitterbaufehler Halbleiter Konferenzschrift 1992 Sankt Petersburg |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=005982505&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| volume_link | (DE-604)BV002354187 |
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