Electronic properties of dilute delta-doping layers in GaAs and investigation of the Si-SiO2 interface using a stress-degradation-anneal cycle:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | Undetermined |
| Veröffentlicht: |
1989
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| Schlagworte: | |
| Beschreibung: | München, Techn. Univ., Diss. |
| Beschreibung: | II, 105 S. |
Internformat
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Datensatz im Suchindex
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| author | Ye, Qiu-Yi |
| author_facet | Ye, Qiu-Yi |
| author_role | aut |
| author_sort | Ye, Qiu-Yi |
| author_variant | q y y qyy |
| building | Verbundindex |
| bvnumber | BV008974320 |
| ctrlnum | (OCoLC)220719539 (DE-599)BVBBV008974320 |
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| genre | (DE-588)4113937-9 Hochschulschrift gnd-content |
| genre_facet | Hochschulschrift |
| id | DE-604.BV008974320 |
| illustrated | Not Illustrated |
| indexdate | 2024-07-09T17:27:46Z |
| institution | BVB |
| language | Undetermined |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-005925910 |
| oclc_num | 220719539 |
| open_access_boolean | |
| owner | DE-29T |
| owner_facet | DE-29T |
| physical | II, 105 S. |
| publishDate | 1989 |
| publishDateSearch | 1989 |
| publishDateSort | 1989 |
| record_format | marc |
| spelling | Ye, Qiu-Yi Verfasser aut Electronic properties of dilute delta-doping layers in GaAs and investigation of the Si-SiO2 interface using a stress-degradation-anneal cycle Qiu-Yi Ye 1989 II, 105 S. txt rdacontent n rdamedia nc rdacarrier München, Techn. Univ., Diss. Galliumarsenid - Mehrschichtsystem - Deltadotierung Silicium - Siliciumdioxid - Grenzfläche - Struktur Elektronische Eigenschaft swd Galliumarsenid swd Grenzfläche swd Hopping-Leitfähigkeit swd Silicium swd Siliciumdioxid swd Grenzfläche (DE-588)4021991-4 gnd rswk-swf Mehrschichtsystem (DE-588)4244347-7 gnd rswk-swf Struktur (DE-588)4058125-1 gnd rswk-swf Siliciumdioxid (DE-588)4077447-8 gnd rswk-swf Silicium (DE-588)4077445-4 gnd rswk-swf Deltadotierung (DE-588)4290571-0 gnd rswk-swf Galliumarsenid (DE-588)4019155-2 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Galliumarsenid (DE-588)4019155-2 s Mehrschichtsystem (DE-588)4244347-7 s Deltadotierung (DE-588)4290571-0 s DE-604 Silicium (DE-588)4077445-4 s Siliciumdioxid (DE-588)4077447-8 s Grenzfläche (DE-588)4021991-4 s Struktur (DE-588)4058125-1 s |
| spellingShingle | Ye, Qiu-Yi Electronic properties of dilute delta-doping layers in GaAs and investigation of the Si-SiO2 interface using a stress-degradation-anneal cycle Galliumarsenid - Mehrschichtsystem - Deltadotierung Silicium - Siliciumdioxid - Grenzfläche - Struktur Elektronische Eigenschaft swd Galliumarsenid swd Grenzfläche swd Hopping-Leitfähigkeit swd Silicium swd Siliciumdioxid swd Grenzfläche (DE-588)4021991-4 gnd Mehrschichtsystem (DE-588)4244347-7 gnd Struktur (DE-588)4058125-1 gnd Siliciumdioxid (DE-588)4077447-8 gnd Silicium (DE-588)4077445-4 gnd Deltadotierung (DE-588)4290571-0 gnd Galliumarsenid (DE-588)4019155-2 gnd |
| subject_GND | (DE-588)4021991-4 (DE-588)4244347-7 (DE-588)4058125-1 (DE-588)4077447-8 (DE-588)4077445-4 (DE-588)4290571-0 (DE-588)4019155-2 (DE-588)4113937-9 |
| title | Electronic properties of dilute delta-doping layers in GaAs and investigation of the Si-SiO2 interface using a stress-degradation-anneal cycle |
| title_auth | Electronic properties of dilute delta-doping layers in GaAs and investigation of the Si-SiO2 interface using a stress-degradation-anneal cycle |
| title_exact_search | Electronic properties of dilute delta-doping layers in GaAs and investigation of the Si-SiO2 interface using a stress-degradation-anneal cycle |
| title_full | Electronic properties of dilute delta-doping layers in GaAs and investigation of the Si-SiO2 interface using a stress-degradation-anneal cycle Qiu-Yi Ye |
| title_fullStr | Electronic properties of dilute delta-doping layers in GaAs and investigation of the Si-SiO2 interface using a stress-degradation-anneal cycle Qiu-Yi Ye |
| title_full_unstemmed | Electronic properties of dilute delta-doping layers in GaAs and investigation of the Si-SiO2 interface using a stress-degradation-anneal cycle Qiu-Yi Ye |
| title_short | Electronic properties of dilute delta-doping layers in GaAs and investigation of the Si-SiO2 interface using a stress-degradation-anneal cycle |
| title_sort | electronic properties of dilute delta doping layers in gaas and investigation of the si sio2 interface using a stress degradation anneal cycle |
| topic | Galliumarsenid - Mehrschichtsystem - Deltadotierung Silicium - Siliciumdioxid - Grenzfläche - Struktur Elektronische Eigenschaft swd Galliumarsenid swd Grenzfläche swd Hopping-Leitfähigkeit swd Silicium swd Siliciumdioxid swd Grenzfläche (DE-588)4021991-4 gnd Mehrschichtsystem (DE-588)4244347-7 gnd Struktur (DE-588)4058125-1 gnd Siliciumdioxid (DE-588)4077447-8 gnd Silicium (DE-588)4077445-4 gnd Deltadotierung (DE-588)4290571-0 gnd Galliumarsenid (DE-588)4019155-2 gnd |
| topic_facet | Galliumarsenid - Mehrschichtsystem - Deltadotierung Silicium - Siliciumdioxid - Grenzfläche - Struktur Elektronische Eigenschaft Galliumarsenid Grenzfläche Hopping-Leitfähigkeit Silicium Siliciumdioxid Mehrschichtsystem Struktur Deltadotierung Hochschulschrift |
| work_keys_str_mv | AT yeqiuyi electronicpropertiesofdilutedeltadopinglayersingaasandinvestigationofthesisio2interfaceusingastressdegradationannealcycle |