Containing papers presented at the 1st Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies: May 19 - 22, 1992, Ecully, France
Gespeichert in:
| Körperschaft: | |
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| Format: | Tagungsbericht Buch |
| Sprache: | English |
| Veröffentlicht: |
Lausanne, Switzerland
Elsevier Sequoia
1993
|
| Schriftenreihe: | Materials science & engineering : B
20,1/2 |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | Literaturangaben. - Einzelaufnahme eines Zs.-Bandes |
| Beschreibung: | 348 S. Ill., graph. Darst. |
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| 245 | 1 | 0 | |a Containing papers presented at the 1st Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies |b May 19 - 22, 1992, Ecully, France |c guest ed.: S. K. Krawczyk |
| 246 | 1 | 3 | |a Papers presented at the 1st Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies |
| 264 | 1 | |a Lausanne, Switzerland |b Elsevier Sequoia |c 1993 | |
| 300 | |a 348 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 0 | |a Materials science & engineering : B |v 20,1/2 | |
| 500 | |a Literaturangaben. - Einzelaufnahme eines Zs.-Bandes | ||
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| 655 | 7 | |0 (DE-588)1071861417 |a Konferenzschrift |y 1992 |z Ecully |2 gnd-content | |
| 689 | 0 | 0 | |a Halbleitertechnologie |0 (DE-588)4158814-9 |D s |
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| 700 | 1 | |a Krawczyk, S. K. |e Sonstige |4 oth | |
| 856 | 4 | 2 | |m Digitalisierung TU Muenchen |q application/pdf |u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=005895930&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |3 Inhaltsverzeichnis |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-005895930 | ||
Datensatz im Suchindex
| _version_ | 1804123269010292736 |
|---|---|
| adam_text | Materials Science and Engineering, B20
( 1993) 341 -348
341
Subject
Index
of
Volume
20
Alloys
effect of quenching temperature on the formation and mag¬
netic properties of the ferromagnetic
т
-phase in Mn-Al-C
alloys,
292
the effects of ionizing radiation on GaAs/AlGaAs and
InGaAs/AlInAs heterojunction bipolar transistors,
280
thermodynamics and phase equilibria in the Ga-Sb system,
308
Aluminium
first step of degradation mechanisms in AlGaAs/GaAs laser-
like structures,
29
Annealing
effective
η
-type
doping of InP by the neutron transmutation
technique,
113
photoluminescence
and photoacoustic investigation of resid¬
ual defects in semi-insulating
LEC GaAs,
100
recent advances in the assessment of GaAs substrate quality
by scanning
photoluminescence,
121
Antimony
thermodynamics and phase equilibria in the Ga-Sb system,
308
Arsenic
interface properties of strained in GaAs/InP quantum well
s
grown by low pressure, metallo-organic vapour phase
epitaxy,
66
Auger electron spectroscopy
microstructural
analysis and modeling of RuO2 thin film resis¬
tors,
301
Batteries
performance characteristics of quaternary silver-based battery
systems,
256
Beryllium
Be+ ion implantation in Ga(Al)Sb layers: radiation damage,
53
Bipolar transistor
the effects of ionizing radiation on GaAs/AlGaAs and
InGaAs/AlInAs heterojunction bipolar transistors,
280
Cadmium telluride
atomic-scale simulation of lattice-mismatched heterostruc-
tures: case of CdTE/GaAs,
88
Capacitors
microwave device for non-destructive magnetoresistance
measurement of semiconducting layers,
203
relating
μ
-wave
mapped data to physical parameters for
MODFETs,
37
Carbon
carbon doped GaAs and AlGaAs grown by OMVPE: doping
properties, oxygen incorporation, and hydrogen passiva¬
tion,
266
effect of quenching temperature on the formation and mag¬
netic properties of the ferromagnetic r-phase in Mn-Al-C
alloys,
292
Ceramics
electrical properties and degradation phenomena of glass-
doped ZnO chip varistors,
261
the low and high frequency dielectric relaxations in lead
magnesium
niobáte
ceramics,
318
varistors based on
п-ВаТіОз
ceramics,
271
Channeling
Be+ ion implantation in Ga(Al)Sb layers: radiation damage,
53
Chemical vapour deposition
physicochemical characterization by means of
IR
absorption
spectroscopy of
SÌ3N4
thin films obtained by chemical
vapour deposition assisted by in situ electrical discharge,
153
Cobalt
fabrication of compositionally modulated ferromagnetic
cobalt-palladium heterostructures by laser-induced
OMCVD,L1
the effects of ionizing radiation on GaAs/AlGaAs and
InGaAs/AlInAs heterojunction bipolar transistors,
280
Coercí
vity
effect of quenching temperature on the formation and mag¬
netic properties of the ferromagnetic
θ
-phase
in Mn-Al-C
alloys,
292
Compound semiconductors
application of deep-level transient spectroscopy for monitor¬
ing point defects in
III-V
semiconductors,
221
concepts of
ultrastable
metal contacts and their evaluation,
141
Czochralski growth of Te-doped GaSb single crystals,
249
improving the quality of microelectronic devices by strained
layer epitaxy,
41
materials-related reliability aspects of
III—V
optical devices,
9
optical characterization of Si wafers for ultraiarge-scale inte¬
gration,
172
recent advances in the assessment of GaAs substrate quality
by scanning
photoluminescence,
121
relating /¿-wave mapped data to physical parameters for
MODFETs,
37
the effects of ionizing radiation on GaAs/AlGaAs and
InGaAs/AlInAs heterojunction bipolar transistors,
280
the effects of probe power on the spatial variation of the room
temperature
photoluminescence
wavelength of an InGaAsP
epitaxial structure,
190
the effects of probe spot size and sampling grid density on
process control values derived from
photoluminescence
mapping,
198
whole wafer assessment of electronic materials by scanning
photoluminescence
and surface
photovoltage,
186
study of bands and conductivities of Cu-TCNQ and
Ag-TCNQ films,
298
Contact formation
concepts of
ultrastable
metal contacts and their evaluation,
141
from micro- to nanoelectronics: new technology require¬
ments,
128
Contact resistance
Au
and Au-Zn contacts on p-GaSb and the characteristics of
the interfaces,
328
characterization of ohmic contacts on n- and p-type GaSb,
162
342
Copper
supermodulus effect in Cu/Mn multilayer films, L5
Crystal growth
photoluminescence and photoacoustic investigation of resid¬
ual defects in semi-insulating
LEC GaAs,
100
Deep level transient spectroscopy
application of deep-level transient spectroscopy for monitor¬
ing point defects in IH-V semiconductors,
221
new method of deep level transient spectroscopy analysis: a
five emission rate method,
214
Defects
application of deep-level transient spectroscopy for monitor¬
ing point defects in IH-V semiconductors,
221
characterization of
LEC GaAs
by electron beam induced cur¬
rent analysis,
175
materials-related reliability aspects of IH-V optical devices,
9
optical characterization of Si wafers for ultralarge-scale inte¬
gration,
172
optical non-destructive tests for the evaluation of micro-
precipitates in semiconductors and devices,
165
paramagnetic
anion
antisites
in neutron-irradiated InP:
thermal recovery and photo-behaviour,
117
recent advances in the assessment of GaAs substrate quality
by scanning photoluminescence,
121
scanning
IR
microscopy and transmission electron micros¬
copy studies of inhomogeneities in
LEC S-doped
InP,
94
Degradation
electrical properties and degradation phenomena of glass-
doped ZnO chip
Varistors, 261
Dielectric properties
the low and high frequency dielectric relaxations in lead
magnesium
niobáte
ceramics,
318
varistore
based on n-BaTiO, ceramics,
271
Dielectrics
UVCVD dielectric films for InP-based optoelectronic devices,
134
Diffusion
characterization of
LEC GaAs
by electron beam induced
current analysis,
175
material related issues and their characterization with a view
to III-V heterojunction device optimization,
1
Raman characterization of GaAs doped with Sn by laser
assisted diffusion,
144
Diodes
low frequency noise as a characterization tool for InP- and
GaAs-based double barrier resonant tunnelling diodes,
207
new method of deep level transient spectroscopy analysis: a
five emission rate method,
214
Doping and impurity implantation
effective
η
-type
doping of InP by the neutron transmutation
technique,
113
Doping effects
carbon doped GaAs and AlGaAs grown by OMVPE: doping
properties, oxygen incorporation, and hydrogen passiva¬
tion,
266
characterization of the homogeneity of semi-insulating InP by
the spatially resolved photocurrent,
105
Czochralski growth of Te-doped GaSb single crystals,249
effect of quenching temperature on the formation and mag¬
netic properties of the ferromagnetic
т
-phase in Mn-Al-C
alloys,
292
Raman investigation of the
photocarrier
properties in both
undoped and Fe-doped InP substrates,
109
scanning
IR
microscopy and transmission electron micros¬
copy studies of inhomogeneities in
LEC
S-doped InP,
94
scanning photoluminescence characterization of iron-doped
gas source molecular beam epitaxy indium phosphide
layers,
82
studies of GaAs surfaces by scanning tunnelling induced
photon emission,
183
Electrical measurements
characterization of
LEC GaAs
by electron beam induced
current analysis,
175
investigation of stability of GaAs metal/electron/semicon¬
ductor field effect transistor gate contacts by high resolu¬
tion transmission electron microscopy analysis,
33
microwave device for non-destructive magnetoresistance
measurement of semiconducting layers,
203
optoelectronic modulation spectroscopy (OEMS)
—
a new tool
for device investigations,
225
performance characteristics of quaternary silver-based battery
systems,
256
the low and high frequency dielectric relaxations in lead mag¬
nesium
niobáte
ceramics,
318
theoretical and experimental study of failure mechanisms in
r.f. reliability life tested high electron mobility transistors,
26
varistore
based on
n
-ВаТіО,
ceramics,
271
Electrical properties
electrical properties and degradation phenomena of glass-
doped ZnO chip varistors,
261
from micro- to nanoelectronics: new technology require¬
ments,
128
microwave device for non-destructive magnetoresistance
measurement of semiconducting layers,
203
physicochemical characterization by means of
IR
absorption
spectroscopy of
SÌ3N4
thin films obtained by chemical
vapour deposition assisted by in situ electrical discharge,
153
Electrodes
concepts of
ultrastable
metal contacts and their evaluation,
141
Electron beams
supermodulus effect in
Cu
/Μη
multilayer films,
L
5
Electron microscopy
microscope observation of a self-standing film of porous
silicon,
324
Electron paramagnetic resonance
paramagnetic
anion
antisites
in neutron-irradiated InP: ther¬
mal recovery and photo-behaviour,
117
Electron spectroscopy
optoelectronic modulation spectroscopy (OEMS)—a new tool
for device investigations,
225
the low and high frequency dielectric relaxations in lead mag¬
nesium
niobáte
ceramics,
318
Electron states
optoelectronic modulation spectroscopy (OEMS)—a new tool
for device investigations,
225
Electronic band structure
electronic structure of (In,Ga)As-(Ga,Al)As strained-layer
quantum wells,
58
Ellipsometry
determination of refractive indexes of
Inü52Al048As
on InP in
the wavelength range from
250
to
1900
nm by
spectro¬
scopie
ellipsometry,
180
transport processes in Au/n-InP and Au/oxide/n-InP devices
treated in oxygen
multipolar
plasma,
157
343
Epilayers
applications of deep-level transient spectroscopy for monitor¬
ing point defects in III-V semiconductors,
221
atomic-scale simulation of lattice-mismatched heterostruc-
tures: case of CdTE/GaAs,
88
characterization of the crystallographic defect structure in
selected area epitaxial growth of GalnAs on InP by
metallo-organic chemical vapour deposition,
48
first step of degradation mechanisms in AlGaAs/GaAs laser-
like structures,
29
improving the quality of microelectronic devices by strained
layer epitaxy,
41
the effects of probe power on the spatial variation of the room
temperature
photoluminescence
wavelength of an InGaAsP
epitaxial structure,
190
the effects of probe spot size and sampling grid density on
process control values derived from
photoluminescence
mapping,
198
Etching
AljGa^As/GaAs heterostructure characterization by wet
chemical etching,
332
material related issues and their characterization with a view
to III-V heterojunction device optimization,
1
microscope observation of a self-standing film of porous
silicon,
324
Evaporation
Raman characterization of GaAs doped with Sn by laser
assisted diffusion,
144
Fast ion conductors
performance characteristics of quaternary silver-based battery
systems,
256
Field effect
material related issues and their characterization with a view
to III-V heterojunction device optimization,
1
Field effect transistor
Hall mobility profiling in high electron mobility transistor
structures,
77
investigation of stability of GaAs metal/electron/semicon¬
ductor field effect transistor gate contacts by high resolu¬
tion transmission electron microscopy analysis,
33
photoluminescence
characterization of structures obtained by
multipolar
plasma oxidation of InP,
148
relating
μ
-wave
mapped data to physical parameters for
MODFETs,
37
theoretical and experimental study of failure mechanisms in
r.f. reliability life tested high electron mobility transistors,
26
Film deposition
physicochemical characterization by means of
IR
absorption
spectroscopy of Si3N4 thin films obtained by chemical
vapour deposition assisted by in situ electrical discharge,
153
Gallium
thermodynamics and phase equilibria in the Ga-Sb system,
308
Gallium antimonide
Au
and Au-Zn contacts on p-GaSb and the characteristics of
the interfaces,
328
characterization of ohmic contacts on n- and p-type GaSb,
162
Czochralski growth of Te-doped GaSb single crystals,
249
Gallium arsenide
AlTGa; ^As/GaAs heterostructure characterization by wet
chemical etching,
332
application of deep-level transient spectroscopy for monitor¬
ing point defects in III-V semiconductors,
221
atomic-scale simulation of lattice-mismatched heterostruc-
tures: case of CdTE/GaAs,
88
carbon doped GaAs and AlGaAs grown by OMVPE: doping
properties, oxygen incorporation, and hydrogen passiva¬
tion,
266
determination of refractive indexes of In,, 52
Al„ 48
As on InP in
the wavelength range from
250
to
1900
ran by
spectro¬
scopie
ellipsometry,
180
characterization of
LEC GaAs
by electron beam induced
current analysis,
175
electronic structure of (In,Ga)As-(Ga,Al)As strained-layer
quantum wells,
58
first step of degradation mechanisms in AlGaAs/GaAs laser-
like structures,
29
Hall mobility profiling in high electron mobility transistor
structures,
77
investigation of stability of GaAs metal/electron/semicon¬
ductor field effect transistor gate contacts by high resolu¬
tion transmission electron microscopy analysis,
33
investigation of the distribution of Fe in semi-insulating LEC-
grown InP by
photoluminescence
and absorption imaging,
91
investigations of the n-GaAs/electrolyte interface with time-
resolved
photoluminescence,
232
optical non-destructive tests for the evaluation of micro-
precipitates in semiconductors and devices,
165
photoluminescence
and photoacoustic investigation of resid¬
ual defects in semi-insulating
LEC GaAs,
100
Raman characterization of GaAs doped with Sn by laser
assisted diffusion,
144
Raman scattering in In^Ga, ^As/GaAs superlattices grown
by molecular beam epitaxy,
69
recent advances in the assessment of GaAs substrate quality
by scanning
photoluminescence,
121
studies of GaAs surfaces by scanning tunnelling induced
photon emission,
183
the effects of ionizing radiation on GaAs/AlGaAs and
InGaAs/AlInAs heterojunction bipolar transistors,
280
theoretical and experimental study of failure mechanisms in
r.f. reliability life tested high electron mobility transistors,
26
whole wafer assessment of electronic materials by scanning
photoluminescence and surface
photovoltage,
186
Glass
electrical properties and degradation phenomena of glass-
doped ZnO chip
Varistors, 261
Gold
Au
and Au-Zn contacts on p-GaSb and the characteristics of
the interfaces,
328
Grain boundaries
effect of Ca2PbO4 on the formation of the
(2223)
phase in the
Bi-Pb-Sr-Ca-Cu-O system,
312
Hall effect
effective
η
-type
doping of InP by the neutron transmutation
technique,
113
Heterojunctions
material related issues and their characterization with a view
to III-V heterojunction device optimization,
1
the effects of ionizing radiation on GaAs/AlGaAs and
InGaAs/AlInAs heterojunction bipolar transistors,
280
theoretical and experimental study of failure mechanisms in
r.f. reliability life tested high electron mobility transistors.
26
344
Heterostructures
Al,Ga|_,As/GaAs
heterostructure characterization
by wet
chemical etching,
332
Ве+
ion implantation in Ga(Al)Sb layers: radiation damage,
53
electronic structure of (In,Ga)As-(Ga,Al)As strained-layer
quantum wells,
58
fabrication of compositionally modulated ferromagnetic
cobalt-palladium heterostructures by laser-induced
OMCVD.L1
first step of degradation mechanisms in AlGaAs/GaAs laser-
like structures,
29
materials-related reliability aspects of III-V optical devices,
9
High transition temperature superconductors
effect of Ca2PbO4 on the formation of the
(2223)
phase in the
Bi-Pb-Sr-Ca-Cu-O system,
312
Impurities
Czochralski growth of Te-doped GaSb single crystals,
249
characterization of
LEC GaAs
by electron beam induced
current analysis,
175
photoluminescence and photoacoustic investigation of resid¬
ual defects in semi-insulating
LEC GaAs,
100
Indium arsenide
electronic structure of (In,Ga)As-(Ga,Al)As strained-layer
quantum wells,
58
Indium oxide
scanning
IR
microscopy and transmission electron micros¬
copy studies of inhomogeneities in
LEC S-doped
InP,
94
Indium phosphide
Al,Ga,_tAs/GaAs heterostructure characterization by wet
chemical etching,
332
characterization of the crystallographic defect structure in
selected area epitaxial growth of GalnAs on InP by
metallo-organic chemical vapour deposition,
48
characterization of the homogeneity of semi-insulating InP by
the spatially resolved photocurrent,
105
determination of refractive indexes of In052Al048As on InP in
the wavelength range from
250
to
1900
run by
spectro¬
scopie
ellipsometry,
180
effective
η
-type
doping of InP by the neutron transmutation
technique,
113
evidence for non-uniform interface thickness in strained
InGaAs/InP quantum wells,
62
investigation of the distribution of Fe in semi-insulating LEC-
grown InP by photoluminescence and absorption imaging,
91
materials problems for the development of InGaAs/InAlAs
HEMT
technology,
21
new method of deep level transient spectroscopy spectrum
analysis: a five emission rate method,
214
non-destructive approaches to
interdiffusion
phenomena
across GalnAs/GalnAsP interfaces: photoluminescence vs.
Raman.
73
paramagnetic
anion
antisites
in neutron-irradiated InP: ther¬
mal recovery and photo-behaviour,
117
photoluminescence characterization of structures obtained by
multipolar
plasma oxidation of InP,
148
Raman investigation of the
photocarrier
properties in both
undoped and Fe-doped InP substrates,
109
Scanning photoluminescence characterization of iron-doped
gas source molecular beam epitaxy indium phosphide
la vers.
82
UVCVD dielectric films for InP-based optoelectronic devices,
134
Indium sulphide
transport processes in Au/n-InP and Au/oxide/n-InP devices
treated in oxygen
multipolar
plasma,
157
Infrared spectroscopy
physicochemical characterization by means of
IR
absorption
spectroscopy of S13N4 thin films obtained by chemical
vapour deposition assisted by in situ electrical discharge,
153
scanning
IR
microscopy and transmission electron microscopy
studies of inhomogeneities in
LEC
S-doped InP,
94
Infrared technology
optical characterization of Si wafers for ultralarge-scale inte¬
gration,
172
Integrated technology
concepts of
ultrastable
metal contacts and their evaluation,
141
from micro- to nanoelectronics: new technology require¬
ments,
128
improving the quality of microelectronic devices by strained
layer epitaxy,
41
materials problems for the development of InGaAs/InAlAs
HEMT
technology,
21
optical characterization of Si wafers for ultralarge-scale inte¬
gration,
172
optical non-destructive tests for the evaluation of micro-
precipitates in semiconductors and devices,
165
relating
μ
-wave
mapped data to physical parameters for
MODFETs,
37
whole wafer assessment of electronic matreials by scanning
photoluminescence and surface
photovoltage,
186
Interdiffusion
non-destructive approaches to
interdiffusion
phenomena
across GalnAs/GalnAsP interfaces: photoluminescence vs.
Raman,
73
Interfaces
Au
and Au-Zn contacts on p-GaSb and the characteristics of
the interfaces,
328
determination of refractive indexes of In0 52A1O 48 As on InP in
the wavelength range from
250
to
1900
run by
spectro¬
scopie
ellipsometry,
180
interface properties of strained in GaAs/InP quantum wells
grown by low pressure, metallo-organic vapour phase
epitaxy,
66
investigations of the n-GaAs/electrolyte interface with time-
resolved photoluminescence,
232
Interfacial
strain
improving the quality of microelectronic devices by strained
layer epitaxy,
41
Raman scattering in In^Ga^As/GaAs superlattices grown
by molecular beam epitaxy,
69
Interfacial
stress
characterization of the crystallographic defect structure in
selected area epitaxial growth of GalnAs on InP by
metallo-organic chemical vapour deposition,
48
Ion implantation
Be+ ion implantation in Ga(Al)Sb layers: radiation damage,
53
Iron
characterization of the homogeneity of semi-insulating
InP by the spatially resolved photocurrent,
105
investigation of the distribution of Fe in semi-insulating LEC-
grown InP by photoluminescence and absorption imaging,
91
Raman investigation of the
photocarrier
properties in both
undoped and Fe-doped InP substrates,
109
345
scanning photoluminescence characterization of iron doped
gas source molecular beam epitaxy indium phosphide
layers,
82
Laser processing
fabrication of compositionally modulated ferromagnetic
cobalt-palladium heterostructures by laser-induced
OMCVD,L1
Raman characterization of GaAs doped with Sn by laser
assisted diffusion,
144
the effects of probe power on the spatial variation of the room
temperature photoluminescence wavelength of an InGaAsP
epitaxial structure,
190
Lasers
Au
and Au-Zn contacts on p-GaSb and the characteristics of
the interfaces,
328
first step of degradation mechanisms in AlGaAs/GaAs laser-
like structures,
29
materials-related reliability aspects of
ПІ
-V
optical devices,
9
Lead
effect of Ca2PbO4 on the formation of the
(2223)
phase in the
Bi-Pb-Sr-Ca-Cu-O system,
312
Luminescence
studies of GaAs surfaces by scanning tunnelling induced
photon emission,
183
Magnetic measurements
effect of quenching temperature on the formation and mag¬
netic properties of the ferromagnetic
т
-phase in Mn-Al-C
alloys,
292
Hall mobility profiling in high electron mobility transistor
structures,
77
Magnetic properties
effect of Ca2PbO4 on the formation of the
(2223)
phase in the
Bi-Pb-Sr-Ca-Cu-O system,
312
effect of quenching temperature on the formation and mag¬
netic properties of the ferromagnetic r-phase in Mn-Al-C
alloys,
292
fabrication of compositionally modulated ferromagnetic
cobalt-palladium heterostructures by laser-induced
OMCVD, LI
varistore
based on n-BaTiOj ceramics,
271
Manganese
supermodulus effect in
Cu
/Μη
multilayer films, L5
Metal-organic chemical vapour deposition
characterization of the crystallographic defect structure in
selected area epitaxial growth of GalnAs on InP by
metallo-organic chemical vapour deposition,
48
Metal-organic vapour phase epitaxy
evidence for non-uniform interface thickness in strained
InGaAs/InP quantum wells,
62
interface properties of strained in GaAs/InP quantum wells
grown by low pressure, metallo-organic vapour phase
epitaxy,
66
Metal-oxide-semiconductor structures
transport
proceses
in Au/n-nP and Au/oxide/n-InP devices
treated in oxygen
multipolar
plasma,
157
Methanol
microscope observation of a self-standing film of poroous
silicon,
324
Microstructural
development
varistors based on
п-ВаТіОз
ceramics,
271
Models of surface and interface atomic displacement
atomic-scale simulation of lattice-mismatched heterostruc¬
tures: case of CdTE/GaAs,
88
Molecular beam epitaxy
determination of refractive indexes of In,, 5: AI(U(i As on InP in
the wavelength range from
250
to
1900
nm by
spectro¬
scopie
ellipsometry,
180
materials problems for the development of InGaAs/InAlAs
HEMT
technology,
21
Raman scattering in
InrGa,^tAs/GaAs superlattices
grown
by molecular beam epitaxy,
69
scanning photoluminescence characterization of iron-doped
gas source molecular beam epitaxy indium phosphide
layers,
82
Monte-Carlo models
atomic-scale simulation of lattice-mismatched heterostruc¬
tures: case of CdTE/GaAs.
88
theoretical and experimental study of failure mechanisms in
r.f. reliability life tested high electron mobility transistors,
26
Multilayer materials
characterization of ohmic contacts on n- and p-type GaSb.
162
supermodulus effect in
Cu
/Μη
multilayer films, L5
Neutron scattering
paramagnetic
anion
antisites
in neutron-irradiated InP: ther¬
mal recovery and photo-behaviour,
117
Neutrons
effective
η
-type
doping of InP by the neutron transmutaton
technique,
113
Noise processes and phenomena
low frequency noise as a characterization tool for InP- and
GaAs-based double barrier resonant tunnelling diodes,
207
Non-destructive measurements
investigations of the n-GaAs/electrolyte interface with time-
resolved photolumnescence,
232
microwave device for non-destructive magnetoresistance
measurement of semiconducting layers,
203
non-destructive approaches to
interdiffusion
phenomena
across GalnAs/GalnAsP interfaces: photoluminescence vs.
Raman,
73
optical non-destructive tests for the evaluation of micro-
precipitates in semiconductors and devices,
165
physicochemical characterization by means of
IR
absorption
spectroscopy of Si3N4 thin films obtained by chemical
vapour deposition assisted by in situ electrical discharge.
153
the effects of probe power on the spatial variation of the room
temperature photoluminescence wavelength of an JnGaAsP
epitaxal structure,
190
whole wafer assessment of electronic materials by scanning
photoluminescence and surface
photovoltage.
186
Optical absorption
paramagnetic
anion
antisites
in neutron-irradiated InP: ther¬
mal recovery and photo-behaviour.
117
Optical measurements
from micro- to nanoelectronics: new technology require¬
ments.
128
microscope observation of a self-standing film of porous
silicon.
324
optical non-destructive tests for the evaluation of micro-
precipitates in semiconductors and devices.
165
Raman scattering in In,Ga,
.
.As/GaAs superlattices grown
by molecular beam epitaxy,
69
346
the effects of probe spot size and sampling grid density on
process control values derived from
photoluminescence
mapping,
198
Optical properties
determination of refractive indexes of In0 52A1O 48As on InP in
the wavelength range from
250
to
1900
run by
spectro¬
scopie
ellipsometry,
180
materials problems for the development of InGaAs/InAlAs
HEMT
technology,
21
materials-related reliability aspects of I1I-V optical devices,
9
Raman investigation of the
photocarrier
properties in both
undoped and Fe-doped InP substrates,
109
Optoelectronic devices
evidence for non-uniform interface thickness in strained
inGaAs/InP quantum wells,
62
UVCVD dielectric films for InP-based optoelectronic devices,
134
Optoelectronics
characterization of the crystallographic defect structure in
selected area epitaxial growth of GalnAs on InP by
metallo-organic chemical vapour deposition,
48
characterization of the homogeneity of semi-insulating InP by
spatially resolved photocurrent,
105
first step of degradation mechanisms in AlGaAs/GaAs laser-
like structures,
29
investigation of the distribution of Fe in semi-insulating LEC-
grown InP by
photoluminescence
and absorption imaging,
91
optoelectronic modulation spectroscopy (OEMS)—a new tool
for device investigations,
225
Organic substances
study of bands and conductivities of Cu-TCNQ and
Ag-TCNQ films,
298
Organometallic chemical vapour deposition
fabrication of compositionally modulated ferromagnetic
cobalt-palladium heterostructures by laser-induced
OMCVD.L1
Oxidation
Hall mobility profiling in high electron mobility transistor
structures,
77
photoluminescence
characterization of structures obtained by
multipolar
plasma oxidation of InP,
148
Oxygen
application of deep-level transient spectroscopy for monitor¬
ing point defects in UI-V semiconductors,
221
carbon doped GaAs and AlGaAs grown by OMVPE: doping
properties, oxygen incorporation, and hydrogen passiva¬
tion.
266
Palladium
fabrication of compositionally modulated ferromagnetic
cobalt-palladium heterostructures by laser-induced
OMCVD.L1
Passivation
carbon doped GaAs and AlGaAs grown by OMVPE: doping
properties, oxygen incorporation, and hydrogen passiva¬
tion,
266
transpon
processes in Au/n-InP and Au/oxide/n-InP devices
treated in oxygen
multipolar
plasma,
157
Perovskites
the low and high frequency dielectric relaxations in lead mag¬
nesium
niobáte
ceramics.
318
Phase diagram
thermodynamics and phase equilibria in the Ga-Sb system,
308
Phosphorus
interface properties of strained in GaAs/InP quantum wells
grown by low pressure, metallo-organic vapour phase
epitaxy,
66
Photoacoustic measurements
photoluminescence
and photoacoustic investigation of resid¬
ual defects in semi-insulating
LEC GaAs,
100
Photocurrent
characterization of the homogeneity of semi-insulating InP by
the spatially resolved photocurrent,
105
investigations of the n-GaAs/electrolyte interface with time-
resolved
photoluminescence,
232
Photodetectors
Be+ ion implantation in Ga(Al)Sb layers: radiation damage,
53
UVCVD dielectric films for InP-based optoelectronic devices,
134
Photodiodes
UVCVD dielectric films for InP-based optoelectronic devices,
134
Photoluminescence
electronic structure of (In,Ga)As-(Ga,Al)As strained-layer
quantum wells,
58
evidence for non-uniform interface thickness in strained
InGaAs/InP quantum wells,
62
investigation of the distribution of Fe in semi-insulating LEC-
grown InP by
photoluminescence
and absorption imaging,
91
investigations of the n-GaAs/electrolyte interface with time-
resolved
photoluminescence,
232
non-destructive approaches to
interdiffusion
phenomena
across GalnAs/GalnAsP interfaces:
photoluminescence
vs.
Raman,
73
photoluminescence
and photoacoustic investigation of resid¬
ual defects in semi-insulating
LEC GaAs,
100
photoluminescence
characterization of structures obtained by
multipolar
plasma oxidation of InP,
148
recent advances in the assessment of GaAs substrate quality
by scanning
photoluminescence,
121
scanning
photoluminescence
characterization of iron doped
gas source molecular beam epitaxy indium phosphide
layers,
82
the effects of probe power on the spatial variation of the room
teperature
photoluminescence
wavelength of an InGaAsP
epitaxial structure,
190
the effects of probe spot size and sampling grid density on
process control values derived from
photoluminescence
mapping,
198
whole wafer assessment of electronic materials by scanning
photoluminescence
and surface
photovoltage,
186
Photons
optoelectronic modulation spectroscopy (OEMS)—a new tool
for device investigations,
225
Raman investigation of the
photocarrier
properties in both
undoped and Fe-doped InP substrates,
109
studies of GaAs surfaces by scanning tunnelling induced
photon emission,
183
Plasma processing
photoluminescence
characterization of structures obtained by
multipolar
plasma oxidation of InP,
148
Process and device modeling
atomic-scale simulation of lattice-mismatched heterostruc¬
tures: case of CdTE/GaAs,
88
347
investigations
of the n-GaAs/electrolyte interface with time-
resolved
photoluminescence,
232
microstructural
analysis and modeling of RuO2 thin film resis¬
tors,
301
relating
μ
-wave
mapped data to physical parameters for
MODFETs,
37
Quantum wells
electronic structure of (In,Ga)As-(Ga,Al)As strained-layer
quantum wells,
58
evidence for non-uniform interface thickness in strained
InGaAs/InP quantum wells,
62
improving the quality of microelectronic devices by strained
layer epitaxy,
41
interface properties of strained in GaAs/InP quantum wells
grown by low pressure, metallo-organic vapour phase
epitaxy,
66
low frequency noise as a characterization tool for InP- and
GaAs-based double barrier resonant tunnelling diodes,
207
non-destructive approaches to
interdiffusion
phenomena
across GalnAs/GalnAsP interfaces:
photoluminescence
ví.
Raman,
73
Raman scattering
effective
η
-type
doping of InP by the neutron trasmutation
technique,
113
Raman investigation of the
photocarrier
properties in both
undoped and Fe-doped InP substrates,
109
Raman scattering in InxGa,_^As/GaAs superlattices grown
by molecular beam epitaxy,
69
Raman spectroscopy
non-destructive approaches to
interdiffusion
phenomena
across GalnAs/GalnAsP interfaces:
photoluminescence
vs.
Raman,
73
Raman characterization of GaAs doped with Sn by laser
assisted diffusion,
144
Reflection
optical characterization of Si wafers for ultralarge-scale inte¬
gration,
172
Relaxor ferroelectrics
the low and high frequency dielectric relaxations in lead mag¬
nesium
niobáte
ceramics,
318
Resistors
microstructural
analysis and modeling of RuO2 thin film resis¬
tors,
301
Resonant effects
low frequency noise as a characterization tool for InP- and
GaAs-based double barrier resonant tunnelling diodes,
207
Ruthenium dioxide
microstructural
analysis and modeling of RuO-> thin film resis¬
tors,
301
Scanning electron microscopy
AljGa^As/GaAs heterostrucrure characterization by wet
chemical etching,
332
Scanning tunnelling microscopy
studies of GaAs surfaces by scanning tunnelling induced
photon emission,
183
Schottky barrier
concepts of
ultrastable
metal contacts and their evalution,
141
characterization of
LEC GaAs
by electron beam induced
current analysis,
175
investigation of stability of GaAs metal/electron/semiconduc¬
tor field effect transistor gate contacts by high resolution
transmission electron microscopy analysis,
33
new method of deep level transient spectroscopy analysis: a
five emission rate method,
214
photoluminescence
characterization of structures obtained by
multipolar
plasma oxidation of InP,
148
Secondary ion mass spectroscopy
Be+ ion implantation in Ga(Al)Sb layers: radiation damage,
53
characterization of ohmic contacts on n- and p-type GaSb,
162
Selenium
Raman charcterization of GaAs doped with Sn by laser
assisted diffusion,
144
Semiconductor devices
from micro- to nanoelectronics: new technology require¬
ments,
128
Hall mobility profiling in high electron mobility transistor
structures,
77
material related issues and their characterization with a view
to III-V heterojunction device optimization,
1
materials-related reliability aspects of III-V optical devices,
9
optical non-destructive tests for the evaluation of micro-
precipitates in semiconductors and devices,
165
Semiconductors
microwave device for non-destructive magnetoresistance
measurement of semiconducting layers,
203
study of bands and conductivities of Cu-TCNQ and
Ag-TCNQ films,
298
Silicon
microscope observation of a self-standing film of porous
silicon,
324
optical characterization of Si wafers for ultralarge-scale inte¬
gration,
172
whole wafer assessment of electronic materials by scanning
photoluminescence
and surface
photovoltage,
186
Silicon nitride
UVCVD dielectric films for InP-based optoelectronic devices,
134
Silver
performance characteristics of quaternary silver-based battery
systems,
256
Solid state ionic devices
performance characteristics of quaternary silver-based battery
systems,
256
Solid-solid interfaces
evidence for non-uniform interface thickness in strained
InGaAs/InP quantum wells,
62
Stress
material related issues and their characterization with a view
to III-V heterojunction device optimization,
1
Structural properties
from micro- to nanoelectronics: new technology require¬
ments,
128
materials problems for the development of InGaAs/InAlAs
HEMT
technology,
21
Superlattices
improving the quality of microelectronic devices by strained
layer epitaxy,
41
Raman scattering in In,
Ga,
_r As/GaAs superlattices grown
by molecular beam epitaxy,
69
theoretical and experimental study of failure mechanisms in
r.f. reliability life tested high electron mobility transistors,
26
348
Surface
morphology
recent advances in the assessment of GaAs substrate quality
by scanning
photoluminescence,
121
Surfaces
studies of GaAs surfaces by scanning tunnelling induced
photon emission,
183
Tellurium
Czochralski growth of Te-doped GaSb single crystals,
249
Theory of transport properties
low frequency noise as a characterization tool for InP- and
GaAs-based double barrier resonant tunnelling diodes,
207
new method of deep level transient spectroscopy analysis; a
five emission rate method,
214
study of bands and conductivities of Cu-TCNQ and
Ag-TCNQ films,
298
Thermal processing
characterization of ohmic contacts on n- and p-type GaSb,
162
Thin films
microstructural
analysis and modeling of RuO2 thin film resis¬
tors,
301
physicochemical characterization by means of
IR
absorption
spectroscopy of Si,N4 thin films obtained by chemical
vapour deposition assisted by in situ electrical discharge,
153
Transmission electron microscopy
investigation of stability of GaAs metal/organic/semiconduc¬
tor field effect transistor gate contacts by high resolution
ТЕМ
analysis,
33
scanning
IR
microscopy and transmission electron micros¬
copy studies of inhomogeneities in 1EC S-doped InP,
94
Transport properties
Hall mobility profiling in high electron mobility transistor
structures.
77
materials problems for the development of InGaAs/InAlAs
HEMT
technology,
21
relating
μ
-wave
mapped data to physical parameters for
MODFETs,
37
transport processes in Au/n-inP and Au/oxide/n-InP devices
treated in oxygen
multipolar
plasma,
157
Tungsten
optoelectronic modulation spectroscopy (OEMS)—a new tool
for device investigations,
225
Tunneling
low frequency noise as, a characterization tool for InP and
GaAs-based double barrier resonant tunnelling diodes,
207
Tunnelling
transport processes in Au/n-InP and Au/oxide/n-InP devices
treated in oxygen
multipolar
plasma,
157
Vanadium
performance characteristics of quaternary silver-based battery
systems,
256
Varistors
Varistors
based on n-BaTiO, ceramics,
271
X-ray spectroscopy
characterization of the crystallographic defect structure in
selected area epitaxial growth of GalnAs on InP by
metallo-organic chemical vapour deposition,
45
effect of Ca2PbO4 on the formation of the
(2223)
phase in the
Bi-Pb-Sr-Ca-Cu-O system,
312
microstructural analysis and modeling of RuO2 thin film resis¬
tors,
301
Zinc
Au
and Au-Zn contacts on p-GaSb and the characteristics of
the interfaces,
328
Zinc oxide
electrical properties and degradation phenomena of glass-
doped ZnO chip varistors,
261
|
| any_adam_object | 1 |
| author_corporate | Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies Ecully |
| author_corporate_role | aut |
| author_facet | Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies Ecully |
| author_sort | Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies Ecully |
| building | Verbundindex |
| bvnumber | BV008938825 |
| classification_tum | ELT 270f |
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| genre_facet | Konferenzschrift 1992 Ecully |
| id | DE-604.BV008938825 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T17:27:05Z |
| institution | BVB |
| institution_GND | (DE-588)5094921-4 |
| language | English |
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| physical | 348 S. Ill., graph. Darst. |
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| spelling | Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies 1 1992 Ecully Verfasser (DE-588)5094921-4 aut Containing papers presented at the 1st Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies May 19 - 22, 1992, Ecully, France guest ed.: S. K. Krawczyk Papers presented at the 1st Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies Lausanne, Switzerland Elsevier Sequoia 1993 348 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Materials science & engineering : B 20,1/2 Literaturangaben. - Einzelaufnahme eines Zs.-Bandes Halbleitertechnologie (DE-588)4158814-9 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 1992 Ecully gnd-content Halbleitertechnologie (DE-588)4158814-9 s DE-604 Krawczyk, S. K. Sonstige oth Digitalisierung TU Muenchen application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=005895930&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Containing papers presented at the 1st Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies May 19 - 22, 1992, Ecully, France Halbleitertechnologie (DE-588)4158814-9 gnd |
| subject_GND | (DE-588)4158814-9 (DE-588)1071861417 |
| title | Containing papers presented at the 1st Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies May 19 - 22, 1992, Ecully, France |
| title_alt | Papers presented at the 1st Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies |
| title_auth | Containing papers presented at the 1st Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies May 19 - 22, 1992, Ecully, France |
| title_exact_search | Containing papers presented at the 1st Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies May 19 - 22, 1992, Ecully, France |
| title_full | Containing papers presented at the 1st Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies May 19 - 22, 1992, Ecully, France guest ed.: S. K. Krawczyk |
| title_fullStr | Containing papers presented at the 1st Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies May 19 - 22, 1992, Ecully, France guest ed.: S. K. Krawczyk |
| title_full_unstemmed | Containing papers presented at the 1st Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies May 19 - 22, 1992, Ecully, France guest ed.: S. K. Krawczyk |
| title_short | Containing papers presented at the 1st Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies |
| title_sort | containing papers presented at the 1st workshop on expert evaluation and control of compound semiconductor materials and technologies may 19 22 1992 ecully france |
| title_sub | May 19 - 22, 1992, Ecully, France |
| topic | Halbleitertechnologie (DE-588)4158814-9 gnd |
| topic_facet | Halbleitertechnologie Konferenzschrift 1992 Ecully |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=005895930&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
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