NASECODE IX transactions: selected papers from the ninth International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits, Copper Mountain, Colorado, USA, April 1993
Gespeichert in:
| Körperschaft: | |
|---|---|
| Format: | Tagungsbericht Buch |
| Sprache: | English |
| Veröffentlicht: |
London u.a.
James & James u.a.
1993
|
| Schriftenreihe: | Compel
12,4 |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | Literaturangaben. - Einzelaufnahme eines Zs.-Bandes |
| Beschreibung: | V S., S. 221 - 556 graph. Darst. |
Internformat
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| 111 | 2 | |a NASECODE Conference |n 9 |d 1993 |c Copper Mountain, Colo. |j Verfasser |0 (DE-588)5089727-5 |4 aut | |
| 245 | 1 | 0 | |a NASECODE IX transactions |b selected papers from the ninth International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits, Copper Mountain, Colorado, USA, April 1993 |c ed. by John J. H. Miller |
| 264 | 1 | |a London u.a. |b James & James u.a. |c 1993 | |
| 300 | |a V S., S. 221 - 556 |b graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
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| 490 | 0 | |a Compel |v 12,4 | |
| 500 | |a Literaturangaben. - Einzelaufnahme eines Zs.-Bandes | ||
| 650 | 4 | |a Mathematisches Modell | |
| 650 | 4 | |a Integrated circuits |x Mathematical models |v Congresses | |
| 650 | 4 | |a Numerical analysis |v Congresses | |
| 650 | 4 | |a Semiconductors |x Mathematical models |v Congresses | |
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| 655 | 7 | |0 (DE-588)1071861417 |a Konferenzschrift |y 1993 |z Copper Mountain Colo. |2 gnd-content | |
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| 999 | |a oai:aleph.bib-bvb.de:BVB01-005890555 | ||
Datensatz im Suchindex
| _version_ | 1804123261290676224 |
|---|---|
| adam_text | CONTENTS
Preface
BOLTZMANN TRANSPORT
AND HYDRODYNAMICS
A comparison of energy balance and simplified hydrodynamic models for GaAs
device simulation
Y. Apanovich
et al.
221
A computationally efficient velocity-space transport model for device simulation
D. Dunn
231
A study of the influence of hydrodynamic model effects on characteristics of
silicon bipolar transistors
A.D.
Sadovníkov
and D.J. Roulston
245
Investigations of a new impact ionization model for
submicron
devices
K. Souissi and H.H.K. Tang
263
MATHEMATICAL ANALYSIS
Using Green s functions to improve conjugate gradient convergence for the semi¬
conductor equations
S. Chandler
297
Speeding-up of convergence of Gummel iterations for transient simulation
M. Obrecht and M. Elmasry
311
DEVICE MODELING
A compound emitter hetcrojunction bipolar transistor
E.
Chor
and
С
Peng
319
Two-dimensional simulations of cutoff frequency characteristics for AIGaAs/GaAs
HBTs with planar structures
K. Horio and A. Nakatani
331
Lateral gate bias effects in resistive gate NMOS transistors
P. Schieke and M.
du Plessis 341
Simulation of the electrical behaviour of GaAs MESFETS with doping and low-field
mobility profiles in the active layer
F. Schwierz
353
Characterization of submicrometer GaAs MESFET using drift-diffusion simulator
H. Z.
Fardi
361
CIRCUIT ANALYSIS
Method for ordering integrated circuit equations in spectral analysis of their transient
behavior
O.A.
Palusinski and M. Abdennadher
377
Module level performance simulator for electrical and optical interconnects
L. Guan, C. Pusarla, G.
Halkias and A. Christou
393
PROCESS SIMULATION
The development of the radiation enhanced diffusion model of boron in silicon
G. Gadiyak and D. Blaghinin
407
Numerical simulation of the thermal oxidation of polycrystalline silicon
G. Gadiyak, J. Korobitsina and
V. Kramarenko
417
A theoretical study of surface kinetic processes in the MBE growth of GaAs
( 100)
R. Venkatasubramanian and S.
Bendi
423
PHYSICAL ASPECTS
Non-equilibrium multi-valley electron distribution functions in GaAs
M. Cheng and R. Chennupati
435
Boundstates of two-electron systems in quantum confined geometries
T. Singh,
С
Engle and M. Cahay
447
The use of realistic bandstructure in impact
ionisation
calculations for wide
bandgap
semiconductors: application to InP and GaAs
S.P Wilson, S. Brand, A.R. Beattie and R.A.
Abram
457
An efficient solution of the multi-band Boltzmann transport equation in silicon
Yu-Jen Wu and
N.
Goldsman
475
DYNA
-a hydrodynamic simulator for two-valley semiconductor devices
Y. Zhang and
M. El
Nokali
487
Voltage controlled
Josephson
junction arrays
G. Qian, M. Cahay, D.B. Mast and H.C. Lee
497
Simulation of field emission from silicon: self-consistent corrections using the
Wigner distribution function
K.L. Jensen and A.K. Ganguly
507
Evanescent modes and scattering effects on resonant tunneling in zero dimensional
nanostructures: a scattering matrix approach
С
Lee and M. Weichold
517
Simulations of defect assisted tunneling and its effect on I-V characteristics in
resonant tunneling diodes
S. Lee, M. Weichold, D. Parker and G. Spencer
525
HOT CARRIER EFFECTS
The influence of lattice heating on semiconductor device characteristics
Y. Apanovich
et al.
531
A physical model for the hot-carrier induced degradation of LDD-PMOS transistor
and its experimental verification
Y. Pan
541
Author Index to Volume
12 553
Subject Index to Volume
12 555
|
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| illustrated | Illustrated |
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| language | English |
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| physical | V S., S. 221 - 556 graph. Darst. |
| publishDate | 1993 |
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| spelling | NASECODE Conference 9 1993 Copper Mountain, Colo. Verfasser (DE-588)5089727-5 aut NASECODE IX transactions selected papers from the ninth International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits, Copper Mountain, Colorado, USA, April 1993 ed. by John J. H. Miller London u.a. James & James u.a. 1993 V S., S. 221 - 556 graph. Darst. txt rdacontent n rdamedia nc rdacarrier Compel 12,4 Literaturangaben. - Einzelaufnahme eines Zs.-Bandes Mathematisches Modell Integrated circuits Mathematical models Congresses Numerical analysis Congresses Semiconductors Mathematical models Congresses Numerische Mathematik (DE-588)4042805-9 gnd rswk-swf Halbleiterbauelement (DE-588)4113826-0 gnd rswk-swf Integrierte Schaltung (DE-588)4027242-4 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 1993 Copper Mountain Colo. gnd-content Halbleiterbauelement (DE-588)4113826-0 s Numerische Mathematik (DE-588)4042805-9 s DE-604 Integrierte Schaltung (DE-588)4027242-4 s Miller, John J. Sonstige (DE-588)106662562 oth Digitalisierung TU Muenchen application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=005890555&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | NASECODE IX transactions selected papers from the ninth International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits, Copper Mountain, Colorado, USA, April 1993 Mathematisches Modell Integrated circuits Mathematical models Congresses Numerical analysis Congresses Semiconductors Mathematical models Congresses Numerische Mathematik (DE-588)4042805-9 gnd Halbleiterbauelement (DE-588)4113826-0 gnd Integrierte Schaltung (DE-588)4027242-4 gnd |
| subject_GND | (DE-588)4042805-9 (DE-588)4113826-0 (DE-588)4027242-4 (DE-588)1071861417 |
| title | NASECODE IX transactions selected papers from the ninth International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits, Copper Mountain, Colorado, USA, April 1993 |
| title_auth | NASECODE IX transactions selected papers from the ninth International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits, Copper Mountain, Colorado, USA, April 1993 |
| title_exact_search | NASECODE IX transactions selected papers from the ninth International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits, Copper Mountain, Colorado, USA, April 1993 |
| title_full | NASECODE IX transactions selected papers from the ninth International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits, Copper Mountain, Colorado, USA, April 1993 ed. by John J. H. Miller |
| title_fullStr | NASECODE IX transactions selected papers from the ninth International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits, Copper Mountain, Colorado, USA, April 1993 ed. by John J. H. Miller |
| title_full_unstemmed | NASECODE IX transactions selected papers from the ninth International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits, Copper Mountain, Colorado, USA, April 1993 ed. by John J. H. Miller |
| title_short | NASECODE IX transactions |
| title_sort | nasecode ix transactions selected papers from the ninth international conference on the numerical analysis of semiconductor devices and integrated circuits copper mountain colorado usa april 1993 |
| title_sub | selected papers from the ninth International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits, Copper Mountain, Colorado, USA, April 1993 |
| topic | Mathematisches Modell Integrated circuits Mathematical models Congresses Numerical analysis Congresses Semiconductors Mathematical models Congresses Numerische Mathematik (DE-588)4042805-9 gnd Halbleiterbauelement (DE-588)4113826-0 gnd Integrierte Schaltung (DE-588)4027242-4 gnd |
| topic_facet | Mathematisches Modell Integrated circuits Mathematical models Congresses Numerical analysis Congresses Semiconductors Mathematical models Congresses Numerische Mathematik Halbleiterbauelement Integrierte Schaltung Konferenzschrift 1993 Copper Mountain Colo. |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=005890555&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
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