Modeling of hot-electron effects in si mos devices:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | Undetermined |
| Veröffentlicht: |
1993
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| Schlagworte: | |
| Beschreibung: | Eindhoven, Techn. Univ., Diss., 1993 |
| Beschreibung: | 136 S. graph. Darst. |
Internformat
MARC
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| 003 | DE-604 | ||
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| 007 | t | ||
| 008 | 940221s1993 d||| m||| 00||| undod | ||
| 035 | |a (OCoLC)634299487 | ||
| 035 | |a (DE-599)BVBBV008894523 | ||
| 040 | |a DE-604 |b ger |e rakddb | ||
| 041 | |a und | ||
| 049 | |a DE-355 | ||
| 100 | 1 | |a Elias, Peter |d 1946- |e Verfasser |0 (DE-588)121161900 |4 aut | |
| 245 | 1 | 0 | |a Modeling of hot-electron effects in si mos devices |c door Petrus Johannes Henricus Elias |
| 264 | 1 | |c 1993 | |
| 300 | |a 136 S. |b graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 500 | |a Eindhoven, Techn. Univ., Diss., 1993 | ||
| 650 | 0 | 7 | |a Elektronische Eigenschaft |0 (DE-588)4235053-0 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a MOS |0 (DE-588)4130209-6 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Silicium |0 (DE-588)4077445-4 |2 gnd |9 rswk-swf |
| 655 | 7 | |0 (DE-588)4113937-9 |a Hochschulschrift |2 gnd-content | |
| 689 | 0 | 0 | |a Silicium |0 (DE-588)4077445-4 |D s |
| 689 | 0 | 1 | |a MOS |0 (DE-588)4130209-6 |D s |
| 689 | 0 | 2 | |a Elektronische Eigenschaft |0 (DE-588)4235053-0 |D s |
| 689 | 0 | |5 DE-604 | |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-005885214 | ||
Datensatz im Suchindex
| _version_ | 1804123252733247488 |
|---|---|
| any_adam_object | |
| author | Elias, Peter 1946- |
| author_GND | (DE-588)121161900 |
| author_facet | Elias, Peter 1946- |
| author_role | aut |
| author_sort | Elias, Peter 1946- |
| author_variant | p e pe |
| building | Verbundindex |
| bvnumber | BV008894523 |
| ctrlnum | (OCoLC)634299487 (DE-599)BVBBV008894523 |
| format | Book |
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| genre | (DE-588)4113937-9 Hochschulschrift gnd-content |
| genre_facet | Hochschulschrift |
| id | DE-604.BV008894523 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T17:26:49Z |
| institution | BVB |
| language | Undetermined |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-005885214 |
| oclc_num | 634299487 |
| open_access_boolean | |
| owner | DE-355 DE-BY-UBR |
| owner_facet | DE-355 DE-BY-UBR |
| physical | 136 S. graph. Darst. |
| publishDate | 1993 |
| publishDateSearch | 1993 |
| publishDateSort | 1993 |
| record_format | marc |
| spelling | Elias, Peter 1946- Verfasser (DE-588)121161900 aut Modeling of hot-electron effects in si mos devices door Petrus Johannes Henricus Elias 1993 136 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Eindhoven, Techn. Univ., Diss., 1993 Elektronische Eigenschaft (DE-588)4235053-0 gnd rswk-swf MOS (DE-588)4130209-6 gnd rswk-swf Silicium (DE-588)4077445-4 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Silicium (DE-588)4077445-4 s MOS (DE-588)4130209-6 s Elektronische Eigenschaft (DE-588)4235053-0 s DE-604 |
| spellingShingle | Elias, Peter 1946- Modeling of hot-electron effects in si mos devices Elektronische Eigenschaft (DE-588)4235053-0 gnd MOS (DE-588)4130209-6 gnd Silicium (DE-588)4077445-4 gnd |
| subject_GND | (DE-588)4235053-0 (DE-588)4130209-6 (DE-588)4077445-4 (DE-588)4113937-9 |
| title | Modeling of hot-electron effects in si mos devices |
| title_auth | Modeling of hot-electron effects in si mos devices |
| title_exact_search | Modeling of hot-electron effects in si mos devices |
| title_full | Modeling of hot-electron effects in si mos devices door Petrus Johannes Henricus Elias |
| title_fullStr | Modeling of hot-electron effects in si mos devices door Petrus Johannes Henricus Elias |
| title_full_unstemmed | Modeling of hot-electron effects in si mos devices door Petrus Johannes Henricus Elias |
| title_short | Modeling of hot-electron effects in si mos devices |
| title_sort | modeling of hot electron effects in si mos devices |
| topic | Elektronische Eigenschaft (DE-588)4235053-0 gnd MOS (DE-588)4130209-6 gnd Silicium (DE-588)4077445-4 gnd |
| topic_facet | Elektronische Eigenschaft MOS Silicium Hochschulschrift |
| work_keys_str_mv | AT eliaspeter modelingofhotelectroneffectsinsimosdevices |