Common themes and mechanisms of epitaxial growth: symposium held April 13 - 15, 1993, San Francisco, California, U.S.A.
Gespeichert in:
Format: | Buch |
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Sprache: | English |
Veröffentlicht: |
Pittsburgh, Pa.
1993
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Schriftenreihe: | Materials Research Society: Materials Research Society symposia proceedings
312 |
Schlagworte: | |
Online-Zugang: | Inhaltsverzeichnis |
Beschreibung: | IX, 348 S. Ill., graph. Darst. |
ISBN: | 1558992081 |
Internformat
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adam_text | MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS VOLUME 312 COMMON
THEMES AND MECHANISMS OF EPITAXIAL GROWTH SYMPOSIUM HELD APRIL 13-15,
1993, SAN FRANCISCO, CALIFORNIA, U.S.A. EDITORS: PAUL FUOSS AT&T BELL
LABORATORIES MURRAY HILL, NEW JERSEY, U.S.A. JEFFREY TSAO SANDIA
NATIONAL LABORATORIES ALBUQUERQUE, NEW MEXICO, U.S.A. DAVID W. KISKER
IBM T.J. WATSON RESEARCH CENTER YORKTOWN HEIGHTS, NEW YORK, U.S.A. *
ANDREW ZANGWILL GEORGIA INSTITUTE OF TECHNOLOGY ATLANTA, GEORGIA, U.S.A.
THOMAS KUECH UNIVERSITY OF WISCONSIN, MADISON MADISON, WISCONSIN, U.S.A.
MATERIALS RESEARCH SOCIETY PITTSBURGH, PENNSYLVANIA CONTENTS PREFACE
MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS *FROM ADATOM MIGRATION
TO CHEMICAL KINETICS: MODELS FOR MBE, MOMBE AND MOCVD * 3 D.D.
VVEDENSKY, T. SHITARA, P. SMILAUER, T. KANEKO, AND A. ZANGWILL *THE
DYNAMICAL TRANSITION TO STEP-FLOW GROWTH DURING HOMOEPITAXY OF GAAS
(001) 15 B.G. ORR, J. SUDIJONO, AND M.D. JOHNSON EVOLUTION OF ROUGHNESS
ON INP LAYERS OBSERVED BY SCANNING FORCE MICROSCOPY 23 M.A. COTTA, R.A.
HAMM, S.N.G. CHU, T.W. STALEY, L.R. HARRIOTT, M.B. PANISH, AND H. TEMKIN
LOW TEMPERATURE SI HOMOEPITAXY: EFFECTS OF IMPURITIES ON MICROSTRUCTURE
29 DP. ADAMS, D.J. EAGLESHAM, AND S.M. YALISOVE »COMPOSITIONAL ORDERING
IN SEMICONDUCTOR ALLOYS 35 G.B. STRINGFELLOW EVOLVING SURFACE CUSPS
DURING STRAINED LAYER EPITAXY 47 D.E. JESSON, S.J. PENNYCOOK, J.-M.
BARIBEAU, AND D.C. HOUGHTON EFFECTS OF MINIMIZING THE DRIVING FORCE FOR
EPITAXY IN THE GE/SI(001) SYSTEM 53 P.O. HANSSON, E. BAUSER, M.
ALBRECHT, AND H.P. STRUNK A COMPARISON OF TWO EPITAXIAL FORMATION
MECHANISMS IN THE SIGE SYSTEM 59 S.M. PROKES AND A.K. RAI THE ROLE OF
VERTICAL EXCHANGE IN THE GROWTH OF GAAS/ALAS LATERAL AND VERTICAL
SUPERLATTICES 65 AXEL LORKE, MOHAN KRISHNAMURTHY, AND PIERRE M. PETROFF
SURFACE ORDERING OF MBE GROWN 001 GA* .JAL;, 5 AS* A THEORETICAL STUDY
71 RITA TRIVEDI, R. VENKATASUBRAMANIAN, AND DONALD L. DORSEY
STRAIN-FIELD INDUCED CROSSHATCH FORMATION DURING MOLECULAR BEAM EPITAXY
OF INGAAS/GAAS FILMS 77 X.C. ZHOU, J. JIANG, A.Y. DU, J.W. ZHAO, S.M.
MU, L.-M. PENG, AND Z.T. ZHONG COMPETING KINETIC AND THERMODYNAMIC
PROCESSES IN THE GROWTH AND ORDERING OF GA 0 5 IN 0 5 P SARAH R. KURTZ,
J.M. OLSON, D.J. AEIENT, A.E. KIBBLER, AND K.A. BERTNESS FORMATION OF
INTRINSIC DEFECTS AT MBE-GROWN GAAS/ALAS INTERFACES P. KRISPIN, R. HEY,
H. KOSTIAL, AND M. HOERICKE INVITED PAPER 83 V GROWTH MORPHOLOGY OF INN
THIN FILMS BY SCANNING TUNNELING AND ATOMIC FORCE MICROSCOPIES AND X-RAY
SCATTERING 95 WAYNE A. BRYDEN, MARILYN E. HAWLEY, SCOTT A. ECELBERGER,
AND THOMAS J. KISTENMACHER STRAIN RELAXATION DURING GROWTH OF EPITAXIAL
FE ON CU(001)/MGO(001) 101 B.J. DANIELS, N.M. RENSING, J.A. BAIN, S.
BRENNAN, B.M. LAIRSON, A.P. PAYNE, AND B.M. CLEMENS ANISOTROPIC SURFACE
ROUGHNESS IN STRAIN RELAXED IN* 40 GAQ 60 AS ON GAAS WITH A STEP-GRADED
IR^GA, X AS BUFFER LAYER 107 J.C.P. CHANG, B.K. KAD, S.R. NUTT, AND
K.L. KAVANAGH SEGREGATION AND INTERDIFFUSION OF IN ATOMS IN
GAAS/INAS/GAAS HETEROSTRUCTURES 113 T. KAWAI, H. YONEZU, Y. OGASAWARA,
D. SAITO, AND *. *** MEASUREMENT OF THE LATERAL PERIODICITY OF A QUANTUM
DOT ARRAY BY TRIPLE CRYSTAL DIFFRACTOMETRY 119 B. JENICHEN, K. PLOOG,
AND O. BRANDT EPITAXIAL GROWTH OF RARE EARTH SILICIDES ON (LLL)SI 125
T.L. LEE, W.D. SUE, J.H. LIN, C.H. LUO, AND L.J. CHEN STACKING
FAULT-LIKE FRINGES ALONG 010 DIRECTIONS OBSERVED IN IN 0 *AL 048 AS
LAYERS ON THE (100) ZONE AXIS 131 F. PEIROE, A. CORNET, AND J.R. MORANTE
X-RAY DIFFRACTION DETERMINATION OF INTERFACE ROUGHNESS IN GAAS/AL X GA!
X AS MULTILAYERS S. NAYAK, J.M. REDWING, T.F. KUECH, Y.-H. PHANG, D.E.
SAVAGE, AND M.G. LAGALLY 137 INTERFACE QUALITY AND INTERDIFFUSION IN
SI-GE HETEROSTRUCTURES 145 J.-M. BARIBEAU, D.J. LOCKWOOD, G.C. AERS, AND
M.W.C. DHARMA-WARDANA EXAMINATION OF GALLIUM ARSENIDE MOCVD REACTION
MECHANISMS 151 ROBERT S. WINDEIER AND ROBERT F. HICKS CHANGE OF ARSENIC
COVERAGE ON GAAS(OOL) 159 HOLGER NOERENBERG AND NOBUYUKI KOGUCHI X-RAY
SPECTROSCOPIC STUDIES OF ORGANO-METALLIC VAPOR PHASE EPITAXIAL GROWTH
165 S. BRENNAN, P.H. FUOSS, D.W. KISKER, F.J. LAMELAS, P. IMPERATORI,
AND G.B. STEPHENSON SIGNIFICANCE OF A NUCLEATION LAYER IN INHIBITING
INTERFACIAL PITTING IN INAS FILMS GROWN BY TWO-STEP MOCVD ON (100) INP
SUBSTRATES 173 A.K. BALLAL, L. SALAMANCA-RIBA, AND D.L. PARTIN EFFECTS
OF GROWTH CONDITIONS AND SUBSTRATE ORIENTATION ON THE PROPERTIES OF INSB
179 R.M. BIEFELD AND K.C. BAUCOM VI CRYSTAL QUALITY OF III-V SUBSTRATE
WAFERS AND EPITAXIAL LAYERS STUDIED BY X-RAY TOPOGRAPHY 185 I.C.
BASSIGNANA AND D.A. MACQUISTAN EPITAXIAL COSI, FILM FORMATION ON (100)
SI BY ANNEALING OF CO/TI/SI STRUCTURE IN N 2 193 SHINICHI OGAWA, M.
LAWRENCE A. DASS, JAMES A. FAIR, TAKASHI KOUZAKI, AND DAVID B. FRAESER
GROWTH MECHANISMS OF YBA,CU,0 7J5 THIN FILMS POST ANNEALED AT A LOW
OXYGEN PARTIAL PRESSURE 201 S.Y. HOU, D.J. WERDER, JULIA M. PHILLIPS,
AND J.H. MARSHALL KINETIC CONTROL OF CAF 2 ON SI(LLL) GROWTH MORPHOLOGY
207 J.D. DENLINGER, ELI ROTENBERG, U. HESSINGER, M. LESKOVAR, AND
MARJORIE A. OLMSTEAD ORDERED STRUCTURES OF ZN, X FE X SE EPILAYERS GROWN
ON INP AND GAAS SUBSTRATES 213 K. PARK, H.-Y. WEI, L. SALAMANCA-RIBA,
AND B.T. JONKER STM IMAGING OF ADSORBED TRIMETHYLGALLIUM ON
GAAS(001)-(2X4) 219 A.R. AVERY, A.J. MAYNE, CM. GORINGE, J.H.G. OWEN,
C.W. SMITH, M.O. SCHWEITZER, T.S. JONES, G.A.D. BRIGGS, AND W.H.
WEINBERG STEPS OF SURFACE ETCHING AND CARBON DEPOSITION ON THE GRAPHITE
BASAL PLANE 225 XI CHU, VINCENT CHAN, AND LANNY D. SCHMIDT EFFECTS OF
PHOSPHORUS EXPOSURE ON ARSENIC-STABILIZED GAAS 2X4 SURFACE 231 A.H.
BENSAOULA, A. FREUNDLICH, A. BENSAOULA, AND V. ROSSIGNOL KINETICS OF
EPITAXIAL LAYER GROWTH FROM SILANE ON (100) SILICON 237 D.W. GREVE THE
EPITAXIAL GROWTH OF GE ON SI(100) USING ** AS A SURFACTANT 243 X. YANG,
R. CAO, J. LI, J. TERRY, J. WU, AND P. PIANETTA LOW TEMPERATURE GROWTH
MECHANISMS FOR RHEED OSCILLATIONS 249 R. BISWAS, K. ROOS, AND M.C.
TRINGIDES NUCLEATION AND GROWTH MODEL FOR METAL-ON-FCC(IOO) METAL
DEPOSITION 255 M.C. BARTELT AND J.W. EVANS HOPPING BARRIERS AT STEP
EDGES 261 PAVEL SMILAUER, MARK R. WILBY, AND DIMITRI D. VVEDENSKY COMMON
FEATURES OF EPITAXIAL GROWTH ON VICINAL GAAS(OOL), ALAS(OOL) AND
INAS(OOL) SURFACES 267 T. SHITARA, D.D. VVEDENSKY, J.H. NEAVE, AND B.A.
JOYCE TEMPERATURE DEPENDENT QUASI-PERIODIC FACETING OF ALAS GROWN BY MBE
ON (100) GAAS SUBSTRATES 273 RICHARD MIRIN, MOHAN KRISHNAMURTHY, JAMES
IBBETSON, ARTHUR GOSSARD, JOHN ENGLISH, AND PIERRE PETROFF VII
PHOTOLUMINESCENCE STUDIES OF A QUANTUM WELL MODULATED BY FACETING ON
GAAS (110) SURFACES 279 S. TOMIYA, CM. REAVES, M. KRISHNAMURTHY, M.
WASSERMEIER, D. BIMBERG, P.M. PETROFF, AND S.P. DENBAARS EPITAXIAL
GROWTH OF CU THIN FILMS ON (LLL)SI AT ROOM TEMPERATURE 285 CS. LIU AND
L.J. CHEN IN-SITU OBSERVATION OF THE INITIAL STAGES OF CO (0001) EPITAXY
ON PT (111) USING GRAZING INCIDENCE X-RAY DIFFRACTION 291 JAMES A. BAIN,
BRUCE M. CLEMENS, AND SEAN BRENNAN ATOMIC STRUCTURE OF THE A-AL 2 O 3
(0001)(^31 X,/31)R+9 RECONSTRUCTION 297 G. RENAUD AND B. VILLETTE
INTERFACIAL ATOMIC STRUCTURE IN HETEROEPITAXIAL /3-SIC ON TIC SUBSTRATES
303 FEN-REN CHIEN, S.R. NUTT, J. CARULLI, N. BUCHAN, W.S. YOO, AND P.M.
MAILLOUX CRYSTALLOGRAPHIC ANALYSIS OF (110)CEO 2 /(100)SI USING RBS/
CHANNELING TECHNIQUE 309 MASATAKA SATOH, YASUHIRO YAMAMOTO, SHIGEYUKI
NAKAJIMA, YOSHINOBU SAKURAI, TOMOYASU INOUE, AND TETSU OHSUNA *NATURAL
PATTERNING OF HIGH-INDEX GAAS SURFACES 315 RICHARD NOETZEL AND KLAUS H.
PLOOG KINETIC ROUGHENING IN EPITAXIAL GROWTH OF BCC (110) FILMS 321
HELMUT FRITZSCHE AND ULRICH GRADMANN DYNAMICS OF PERIODIC STEP-BUNCHING
DURING GROWTH ON VICINAL GAAS(LLO) SURFACES: COMPUTER SIMULATIONS AND
EXPERIMENTS 327 MOHAN KRISHNAMURTHY, D.R.M. WILLIAMS, AND P.M. PETROFF
DISLOCATIONS NUCLEATING GROWTH IN LIQUID PHASE EPITAXY OF GALLIUM
ARSENIDE 333 WERNER MOEHLING, H. WEISHART, AND E. BAUSER MIGRATION
ENHANCED EPITAXY OF GAAS STUDIED BY REFLECTION HIGH ENERGY ELECTRON
DIFFRACTION AND SCANNING TUNNELING MICROSCOPY 339 JIANMING FU, D.L.
MILLER, J. KIM, M.C GALLAGHER, AND R.F. WILLIS AUTHOR INDEX 345 SUBJECT
INDEX 347 *INVITED PAPER
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genre_facet | Konferenzschrift 1993 San Francisco Calif. |
id | DE-604.BV008894059 |
illustrated | Illustrated |
indexdate | 2024-07-09T17:26:49Z |
institution | BVB |
isbn | 1558992081 |
language | English |
oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-005884823 |
oclc_num | 28584139 |
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owner_facet | DE-384 DE-29T DE-703 DE-83 DE-91G DE-BY-TUM |
physical | IX, 348 S. Ill., graph. Darst. |
publishDate | 1993 |
publishDateSearch | 1993 |
publishDateSort | 1993 |
record_format | marc |
series | Materials Research Society: Materials Research Society symposia proceedings |
series2 | Materials Research Society: Materials Research Society symposia proceedings |
spelling | Common themes and mechanisms of epitaxial growth symposium held April 13 - 15, 1993, San Francisco, California, U.S.A. ed.: Paul Fuoss ... Pittsburgh, Pa. 1993 IX, 348 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Materials Research Society: Materials Research Society symposia proceedings 312 Compound semiconductors Surfaces Congresses Crystal growth Congresses Molecular beam epitaxy Congresses Epitaxie (DE-588)4152545-0 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 1993 San Francisco Calif. gnd-content Epitaxie (DE-588)4152545-0 s DE-604 Fuoss, Paul Sonstige oth Materials Research Society: Materials Research Society symposia proceedings 312 (DE-604)BV001899105 312 GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=005884823&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
spellingShingle | Common themes and mechanisms of epitaxial growth symposium held April 13 - 15, 1993, San Francisco, California, U.S.A. Materials Research Society: Materials Research Society symposia proceedings Compound semiconductors Surfaces Congresses Crystal growth Congresses Molecular beam epitaxy Congresses Epitaxie (DE-588)4152545-0 gnd |
subject_GND | (DE-588)4152545-0 (DE-588)1071861417 |
title | Common themes and mechanisms of epitaxial growth symposium held April 13 - 15, 1993, San Francisco, California, U.S.A. |
title_auth | Common themes and mechanisms of epitaxial growth symposium held April 13 - 15, 1993, San Francisco, California, U.S.A. |
title_exact_search | Common themes and mechanisms of epitaxial growth symposium held April 13 - 15, 1993, San Francisco, California, U.S.A. |
title_full | Common themes and mechanisms of epitaxial growth symposium held April 13 - 15, 1993, San Francisco, California, U.S.A. ed.: Paul Fuoss ... |
title_fullStr | Common themes and mechanisms of epitaxial growth symposium held April 13 - 15, 1993, San Francisco, California, U.S.A. ed.: Paul Fuoss ... |
title_full_unstemmed | Common themes and mechanisms of epitaxial growth symposium held April 13 - 15, 1993, San Francisco, California, U.S.A. ed.: Paul Fuoss ... |
title_short | Common themes and mechanisms of epitaxial growth |
title_sort | common themes and mechanisms of epitaxial growth symposium held april 13 15 1993 san francisco california u s a |
title_sub | symposium held April 13 - 15, 1993, San Francisco, California, U.S.A. |
topic | Compound semiconductors Surfaces Congresses Crystal growth Congresses Molecular beam epitaxy Congresses Epitaxie (DE-588)4152545-0 gnd |
topic_facet | Compound semiconductors Surfaces Congresses Crystal growth Congresses Molecular beam epitaxy Congresses Epitaxie Konferenzschrift 1993 San Francisco Calif. |
url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=005884823&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
volume_link | (DE-604)BV001899105 |
work_keys_str_mv | AT fuosspaul commonthemesandmechanismsofepitaxialgrowthsymposiumheldapril13151993sanfranciscocaliforniausa |