Gettering and defect engineering in semiconductor technology: proceedings of the 5th international autumn meeting, held in Chossewitz, near Frankfurt (Oder), Germany, October 09 - 14, 1993
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| Veröffentlicht: |
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Scitec Publ. Ltd.
1993
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| Schriftenreihe: | Diffusion and defect data
B, Solid state phenomena ; 32/33 |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | Literaturangaben |
| Beschreibung: | XVII, 630 S. Ill., graph. Darst. |
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| 245 | 1 | 0 | |a Gettering and defect engineering in semiconductor technology |b proceedings of the 5th international autumn meeting, held in Chossewitz, near Frankfurt (Oder), Germany, October 09 - 14, 1993 |c GADEST '93. Eds. H. G. Grimmeiss ... |
| 264 | 1 | |a Zug, Switzerland |b Scitec Publ. Ltd. |c 1993 | |
| 300 | |a XVII, 630 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 1 | |a Diffusion and defect data : B, Solid state phenomena |v 32/33 | |
| 500 | |a Literaturangaben | ||
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| 830 | 0 | |a Diffusion and defect data |v B, Solid state phenomena ; 32/33 |w (DE-604)BV021637351 |9 32/33 | |
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| 999 | |a oai:aleph.bib-bvb.de:BVB01-005546251 | ||
Datensatz im Suchindex
| _version_ | 1804122786313011200 |
|---|---|
| adam_text | TABLE
OF
CONTENTS
I.
GENERAL
ULSI Technology
-
A
Complex Device Manufacturing Process
S.J. Hillenius
1
Semiconductor
Isotope Engineering
E.E.
Haller j
,
Crystalline Silicon for Solar Cells
G. Martinelli
21
Light-Emitting Porous Silicon:
A Defective Quantum Sponge Structure?
U.
Gösele
and V.
Lehmann 27
Semiconducting Silicide-Silicon Heterostructures
J. Chevrier, J.Y.
Natoli.
I. Berbezier.
A. Ronda
and J. Derrien
39
What Local-Density Calculations Can Teach about Semiconductor
Surfaces, Interfaces, and Defects (Extended Abstract)
M. Methfessel and J.
Dąbrowski
5
II. DEFECT CONTROL AND
GETTERING
Mechanisms of Transition Metal
Gettering
in Silicon
D.
Gilles
57
Gettering
in Silicon under Vacancy Generation Conditions
N.T.
Bagraev, L.E. Klyachkin and
V.L.
Sukhanov
71
Phosphorus External
Gettering
Efficiency in Multicrystalline
Silicon Wafers
I. Perichaud, F. Floret. M.
Stemmer
and S. Martinuzzi
77
Defect Engineering in Erbium-Doped Silicon Structure Technology
N.A. Sobolev, O.V. Alexandrov. B.N. Gresserov. G.M. Gusinskii.
V.O.
Naidenov. E.I. Sheck.
V.l.
Stepanov. Yu. V. Vyzhidn.
L.F. Chepnik and E.P. Troshina g3
Contents
PN
Junction Formation by Two Steps Annealing
C.S. Chen,
CF.
Li, M.C. He, D.R. Yang and D.L.
Que
89
Generation of the P-Induced
Misfît
Dislocations during the Diffusion
in Silicon: Analytical Determination of the Criticy Conditions
F. Gaiseanu, R.
Plugaru,
M. Bazu
and
0.
Buiu
93
Processes of Defect Formation and
Gettering
under Dry Etching
of Si and GaAs and Measurements of Diffusion Length Profile
O.V. Kononchuk and E.B. Yakimov
99
On the Interaction of Transition Metals with Silicon Grain Boundaries
M.
Stemmer,
S.
Martinuzzi and M. Pasquinelli
105
Dry Cleaning of Silicon Wafers in a Low Energy Hydrogen Plasma
J.
Ramm,
E.
Beck,
Α.
Dommann,
I. Eisele,
D.
Krüger
and
G. Lippert
111
Reduction of
Interfacial
Carbon and Boron Contamination as
Sources for Degradation of Epitaxial SiGe Layers Grown by MBE
H.P. Zeindl, G. Lippert, J. Drews, R. Kurps and
HJ. Osten 117
Misfit Strain Engineering in Heteroepitaxial Structures
H.
Richter,
A. Fischer, H.
Kühne
and M. Eichler
123
Surfactant-Mediated MBE of Strained-Layer III-V Semiconductor
Heterostructures
K.H. Ploog and
E. Tournié
129
Transition Metal
Gettering
in Poly-Silicon for Photovoltaic
Applications (Abstract)
E.R. Weber and J. Bailey
141
III. IMPURITIES
Properties of Hydrogen, Oxygen and Carbon in Silicon
A.L.
Endrös
143
Solubility of Hydrogen in Silicon at High Temperatures
R.C. Newman. M.J. Binns,
S.A.
McQuaid and E.C. Lightowlers
155
Contents xi
Effect of Oxygen Concentration on the Kinetics of Oxygen Loss and
Thermal Donor Formation in Silicon at Temperatures between
350°C and 500°C
C.A. Londos,
S.A.
McQuaid, M.J. Binns, R.C. Newman and J.H. Tucker
161
Evolution of Oxygen Clusters and Agglomerates in Annealed Cz-Si
at High Pressure
-
High Temperature
A. Misiuk, J. Adamczewska, J. Bak-Misiuk and J. Wolf
167
Peculiarities in the Defect Behavior in Heat-Treated Cz-Si with a
Low and High Oxygen Content
V.V. Emtsev, G.A. Oganesyan and K.
Schmalz 173
New Evidences about Carbon and Oxygen Segregation Processes in
Polycrystalline Silicon
S. Binetti, S. Ferrari, M. Acciarri, S. Acerboni, R.
Canteri
and S. Pizzini
181
Oxygen and Copper Precipitation at the Silicon/Silicon Dioxide
Interface
A. Correia,
A. Boutry-Forveille
,
D. Ballutaud and J.L. Maurice
191
The Role of Oxygen for Defect Formation in Oxygen-Rich
Si- and Si^Ge^Layers on Silicon Grown by APCVD
D.
Krüger,
Th.
Morgenstern,
R.
Kurps and Ch. Quick
197
Annealing Properties of N-Doped Cz-Si Crystals
C.S. Chen,
CF.
Li, F. Dai, H.J. Ye, Y.C. Huang,
D.R. Yang and H.N. Yao
203
Oxygen-Related Clusters of Platinum in Silicon
-
an Electron Spin
Resonance Study
M.
Höhne
and
U. Juda
207
Formation and Properties of Tetranuclear Clusters of Manganese
in Silicon
J. Kreissl and W. Gehlhoff
213
EPR Identification of the Different Charge States of the
Iron-Acceptor Pairs in Silicon
W. Gehlhoff and K. Irmscher
219
Investigation of Deep Levels and Carrier Dynamics in SiC Films
M. Petrauskas, V. Bikbayev, R. Tomasiunas, M.
Willander
and Q. Wahab
225
xii
Contents
IV. DEFECTS AND DEFECT-RELATED PHENOMENA
Process-Induced Defects in Silicon Technology
B.O. Kolbesen, M. Dellith, R. Booker, H.
Cerva,
F. Gelsdorf
and
W.
Bergholz 231
Lattice Defects Induced in Si^Ge, Diodes by 1-MeV Electron
Irradiation and their Influence on Electrical Characteristics
H. Ohyama, J. Vanhellemont, J. Poortmans, M. Caymax and P. Clauws
247
Non-Equilibrium Impurity Diffusion in Silicon and Silicon Carbide
N.T.
Bagraev, E.I. Chaikina and L.E. Klyachkin
253
Dopant Migration Caused by Point Defect Gradients
P. Pichler and S. List
259
Vacancy-Assisted Diffusion of Si in GaAs: Microscopic Theory
J.
Dąbrowski
and J. Northrup
269
Investigation of Defect Generation and Precipitation in Antimony
Implanted Silicon
D.
Krüger,
R.
Kurps and P.
Zaumseil 273
Electric-Dipole Spin Resonance of Extended Defects in Silicon
V.V. Kveder
279
Luminescence of Dislocations in SiGe/Si Structures
V. Higgs
291
On the Nature of Dislocation Luminescence in Si and Ge
E.A. Steinman
303
Defect Electrical Activity Study using a Si(Ge) Heteroepitaxial
Structure
Z.J. Radzimski, A. Buczkowski and G.A. Rozgonyi
309
Properties of Dislocations and Point Defects in Fz-Si
D. Cavalcoli.
A. Cavallini, E.
Gombia and M.
Reiche 319
Metastable States Associated with
Interfacial
Misfit Dislocations in
Si/Si(Ge) Heterostructures
S.V.
Koveshnikov. A. Agarwal and G.A. Rozgonyi
325
Contents xiii
Experimental
Study of Anomalous Dislocation Kinks Drift in
Germanium Single Crystals
Yu. L. Iunin,
V.l.
Nikitenko,
V.l.
Orlov
and B.V. Petukhov
333
Cu Precipitation in Strained and Relaxing Ge.Si,.,
Heteroepitaxial Layers
G. Kissinger, G.
Morgenstern
and H.
Richter 339
Peculiarities of Defect Formation in SiGe/Si and SiGe/Ge
Heterostructures
V.l.
Vdovin, M.G.
MiľVidskii
and T.G. Yugova
345
The Influence of Oxidation Induced Stacking Faults on Electrical
Parameters of a CCD Device
P. Schley, G. Kissinger, R.
Barth
and K.-E. Ehwald
353
Metals, Oxide Precipitates and Minority Carrier Lifetime in Silicon
(Extended Abstract)
R. Falster and D.
Gámbaro
359
V. GROWTH AND PROPERTIES OF SEMICONDUCTOR
HETEROSTRUCTURES
UHV-VLPCVD Heteroepitaxial Growth of Thin SiGe-Layers on
Si Substrates: Influence of Pressure on Kinetics and on Surface-
Morphology
M.R. Caymax, J.
Poortmans
and A. Van Ammel
361
Formation of High Quality SiGe/Si Heterostructures
Y. Shiraki, S. Fukatsu, K. Fujita, T.
Usami, D.K.
Nayak,
H. Sunamura and R.
Ito
373
Liquid Phase Epitaxy of SiGe Structures
E. Bauser, P.O.
Hansson,
M.
Albrecht,
Н.Р.
Strunk
and A. Gustafsson
385
Planar
Defects and Misfit Dislocations in
(001)
GaAs/Ge
Heterostructures MOCVD Grown with Different V/III Ratio
С
Frigeri, G. Attolini, C.
Pelosi
and A. Armigliato
397
xiv
Contents
Solvents Influencing the Morphology of Epitaxial Solution-Grown
Strained Ge/Si Layers
P.O.
Hansson,
E.
Bauser,
M.
Albrecht
and
Н.Р.
Strunk 403
Deposition and Phosphorus Doping of Si^Ge, Layers in a
Conventional Horizontal Tube APCVD Reactor without
Load Lock System
Th.
Morgenstern,
I. Babanskaya, G.
Morgenstern,
К.
Schmalz,
P. Gaworzewski, P.
Zaumseil,
D.
Krüger,
К.
Tittelbach-Helmrich
and H.
Kühne 409
Misfit Dislocations in Strained Layer Epitaxy
R. Hull, JC. Bean and R.A. Logan
417
Stress Relaxation Mechanisms by Dislocations in the System
Ge on Si
M.
Albrecht,
S.
Christiansen,
Н.Р.
Strunk,
P.O.
Hansson
and
E.
Bauser
433
Strain Relaxation and Threading Dislocation Density in
Lattice-Mismatched Semiconductor Systems
H.-H.
Wehmann, G.-P.
Tang and A. Schlachetzki
445
Relaxation Phenomena of Strained Si^Ge, Layers on Planar
and Differently Patterned Si Substrates
E.
Bugiei,
P.
Zaumseil,
В.
Dietrich and H.J.
Osten 451
Equilibrium Configuration of Misfit Dislocations in Graded Buffers
G. Span, G. Heigl and E.
Kasper 457
Evolution of Amorphous/Crystalline
Interfacial
Roughness and
End-of-Range Defects During Solid-Phase Epitaxial Regrowth of
Ge Implanted Silicon
M. Seibt
463
Investigations of 2D Hole Gas in Strained Ge-Ge^Si, Superlattices
L.K.
Orlov,
O.A.
Kuznetsov, R.A. Rubtsova, A.L. Chernov,
V.l.
Vdovin. N.A. Gorodilov, N.G. Kalugin and
V.l.
Gavrilenko
469
Photoluminescence of ID-Excitons in Ge Layers of Ge-Ge^Si,
Multiple Quantum Well Structures
N.G. Kalugin. L.K.
Orlov
and
O.A.
Kuznetsov
475
Contents xv
Strained Quaternary Compounds GalnAsP/InP for Infrared Laser
(1.5
μΐη)
L.
Goldstein, P. Pagnod-Rossiaux, F.
Gáborit,
P. Garabedian,
M. Magnabal, F. Brillouet and M. Matabon
481
Persistent Decrease of Dark Conductivity due to Illumination in
AlGaAs/GaAs Modulation-Doped Heterostructures
H.
Pettersson,
H.G.
Grimmeiss,
A.L.
Powell,
CC.
Button,
J.S.
Roberts and P.I. Rockett
489
Photoelectrical Interface Processes in Multilayer-Type
Heterostructures Based on Silicon, II-VI Compounds and
Photosyntbetic Pigments
M. Gherghel
495
VI. CHARACTERIZATION TECHNIQUES
Application of Electron Microscopy to- Semiconductor Materials
Research
J. Heydenreich
511
Х
-Ray Analysis of Strained Layer Configurations
H.-J.
Herzog 523
In-Situ
Х
-Ray Investigation of Relaxation Processes in
Si,„Ge,
Layers on Silicon Substrate
P.
Zaumseil 535
Determination of Superlartice Structural Parameters in Mismatched
Epitaxial Structures
R.N. Kyutt,
S.S.
Ruvimov and M.P. Scheglov
541
Investigation of Strain in Si^Ge./Si Heterostructures and Local
Isolation Structures by Convergent Beam Electron Diffraction
A. Armigliato, R. Balboni, S. Frabboni and J. Vanhellemont
547
New Applications of Diffraction Analysis for Dislocation Structure in
High Lattice-Mismatch MBE Grown Epitaxial Structures
R.N. Kyutt, J. Heydenreich,
S.S.
Ruvimov, R.
Scholz,
T.S.
Ajgunova,
S.V.
Ivanov,
P.S.
Kop ev and L.M. Sorokin
553
xv¡
Contents
Detection of Threading Dislocations by EBIC in a SiGe Epilayer with
Graded Buffer
M. Kittler,
С
Ulhaq-Bouillet, J. Hersener and
F. Schäffler 559
HREM and DLTS of
Σ37(610)
and
129(520) [001]
Tilt Grain
Boundaries in Ge Bicrystals
N.I. Bochkareva, J. Heydenreich, S. Ruvimov, R.
Scholz,
К.
Scheerschmidt and L.M. Sorokin
565
TEM In-Situ
Investigations of
Interfacial
Processes in the
Pd/a-GeSi System
M.
Reiche, F.
Edelman
and J. Heydenreich
571
Micro-Raman Investigations of Elastic and Plastic Strain Relief in
Sii.,Ge, Heterostructures
B. Dietrich, E.
Bugiei,
HJ. Osten
and P.
Zaumseil 577
Raman Study of the Phonon-Plasmon Modes in the Short Period
GaAs/AlAs Superlattices
M.D. Efremov, V.A. Volodin and V.V. Bolotov
583
Positron Annihilation on Thermal Defects in Cz-Si and Fz-Si
N.
Yu. Axutyunov
589
Characterization of MBE Grown Si/Si^Ge/Si Structures using
np-Diodes
K.
Schmalz,
H.
Rücker,
H.G. Grimmeiss,
В.
Dietrich,
H.
Frankenfeldt,
W.
Mehr, HJ. Osten and P. Schley 595
Investigations on Surface and Bulk Semiconductor Properties using
Two-Wavelength TRMC Measurements
G. Betz, W.
Gründler,
J. Quick and H.
Richter 601
Investigation of Recombination Properties of
Ti
Double Donor in Si
G. Ferenczi, T.
Pavelka,
P.
Tutto
and L.
Köster 609
Contents xvii
VII.
APPENDIX
Mapping
Interfacial
Roughness and Composition in Elemental
Semiconductor Systems (Extended Abstract)
A. Ourmazd, P.
Schwander,
С.
Kisielowski,
M.
Seibt,
F.H.
Baumann
and Y.O.
Kim
615
The Influence of the Electron Subsystem Excitation on the Kinetics
and Dynamics of Dislocations
V.A. Makara, L.P. Steblenko and E.G. Robur
619
Author Index
627
|
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| indexdate | 2024-07-09T17:19:24Z |
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| record_format | marc |
| series | Diffusion and defect data |
| series2 | Diffusion and defect data : B, Solid state phenomena |
| spelling | Gettering and defect engineering in semiconductor technology proceedings of the 5th international autumn meeting, held in Chossewitz, near Frankfurt (Oder), Germany, October 09 - 14, 1993 GADEST '93. Eds. H. G. Grimmeiss ... Zug, Switzerland Scitec Publ. Ltd. 1993 XVII, 630 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Diffusion and defect data : B, Solid state phenomena 32/33 Literaturangaben Halbleiter (DE-588)4022993-2 gnd rswk-swf Gitterbaufehler (DE-588)4125030-8 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 1993 Chossewitz gnd-content Halbleiter (DE-588)4022993-2 s Gitterbaufehler (DE-588)4125030-8 s DE-604 Grimmeiss, Hermann G. Sonstige oth GADEST 5 1993 Chossewitz Sonstige (DE-588)1400409-4 oth Diffusion and defect data B, Solid state phenomena ; 32/33 (DE-604)BV021637351 32/33 Digitalisierung TU Muenchen application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=005546251&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Gettering and defect engineering in semiconductor technology proceedings of the 5th international autumn meeting, held in Chossewitz, near Frankfurt (Oder), Germany, October 09 - 14, 1993 Diffusion and defect data Halbleiter (DE-588)4022993-2 gnd Gitterbaufehler (DE-588)4125030-8 gnd |
| subject_GND | (DE-588)4022993-2 (DE-588)4125030-8 (DE-588)1071861417 |
| title | Gettering and defect engineering in semiconductor technology proceedings of the 5th international autumn meeting, held in Chossewitz, near Frankfurt (Oder), Germany, October 09 - 14, 1993 |
| title_auth | Gettering and defect engineering in semiconductor technology proceedings of the 5th international autumn meeting, held in Chossewitz, near Frankfurt (Oder), Germany, October 09 - 14, 1993 |
| title_exact_search | Gettering and defect engineering in semiconductor technology proceedings of the 5th international autumn meeting, held in Chossewitz, near Frankfurt (Oder), Germany, October 09 - 14, 1993 |
| title_full | Gettering and defect engineering in semiconductor technology proceedings of the 5th international autumn meeting, held in Chossewitz, near Frankfurt (Oder), Germany, October 09 - 14, 1993 GADEST '93. Eds. H. G. Grimmeiss ... |
| title_fullStr | Gettering and defect engineering in semiconductor technology proceedings of the 5th international autumn meeting, held in Chossewitz, near Frankfurt (Oder), Germany, October 09 - 14, 1993 GADEST '93. Eds. H. G. Grimmeiss ... |
| title_full_unstemmed | Gettering and defect engineering in semiconductor technology proceedings of the 5th international autumn meeting, held in Chossewitz, near Frankfurt (Oder), Germany, October 09 - 14, 1993 GADEST '93. Eds. H. G. Grimmeiss ... |
| title_short | Gettering and defect engineering in semiconductor technology |
| title_sort | gettering and defect engineering in semiconductor technology proceedings of the 5th international autumn meeting held in chossewitz near frankfurt oder germany october 09 14 1993 |
| title_sub | proceedings of the 5th international autumn meeting, held in Chossewitz, near Frankfurt (Oder), Germany, October 09 - 14, 1993 |
| topic | Halbleiter (DE-588)4022993-2 gnd Gitterbaufehler (DE-588)4125030-8 gnd |
| topic_facet | Halbleiter Gitterbaufehler Konferenzschrift 1993 Chossewitz |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=005546251&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| volume_link | (DE-604)BV021637351 |
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