Shallow impurities in semiconductors: proceedings of the fifth International Conference on Shallow Impurities in Semiconductors "Physics and Control of Impurities", International Conference Center Kobe, Japan, 5 to 8 August 1992
Gespeichert in:
| Format: | Tagungsbericht Buch |
|---|---|
| Sprache: | English |
| Veröffentlicht: |
Aedermannsdorf, Switzerland
Trans Tech Publ.
1993
|
| Schriftenreihe: | Materials science forum
117/118 |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | Literaturangaben |
| Beschreibung: | 528 S. Ill., graph. Darst. |
| ISBN: | 0878496548 |
Internformat
MARC
| LEADER | 00000nam a2200000 cb4500 | ||
|---|---|---|---|
| 001 | BV008336705 | ||
| 003 | DE-604 | ||
| 005 | 20230811 | ||
| 007 | t | ||
| 008 | 931122s1993 ad|| |||| 10||| eng d | ||
| 020 | |a 0878496548 |9 0-87849-654-8 | ||
| 035 | |a (OCoLC)27704826 | ||
| 035 | |a (DE-599)BVBBV008336705 | ||
| 040 | |a DE-604 |b ger |e rakddb | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-91G |a DE-703 |a DE-83 |a DE-11 |a DE-706 | ||
| 050 | 0 | |a TA401.3 | |
| 082 | 0 | |a 541.341 | |
| 084 | |a UP 3250 |0 (DE-625)146380: |2 rvk | ||
| 084 | |a PHY 696f |2 stub | ||
| 245 | 1 | 0 | |a Shallow impurities in semiconductors |b proceedings of the fifth International Conference on Shallow Impurities in Semiconductors "Physics and Control of Impurities", International Conference Center Kobe, Japan, 5 to 8 August 1992 |c ed. Tsunemasa Taguchi |
| 264 | 1 | |a Aedermannsdorf, Switzerland |b Trans Tech Publ. |c 1993 | |
| 300 | |a 528 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 1 | |a Materials science forum |v 117/118 | |
| 500 | |a Literaturangaben | ||
| 650 | 4 | |a Semiconductors |x Defects |v Congresses | |
| 650 | 4 | |a Semiconductors |x Impurity distribution |v Congresses | |
| 650 | 0 | 7 | |a Störstelle |0 (DE-588)4193400-3 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Halbleiter |0 (DE-588)4022993-2 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Verunreinigung |0 (DE-588)4188107-2 |2 gnd |9 rswk-swf |
| 655 | 7 | |0 (DE-588)1071861417 |a Konferenzschrift |y 1992 |z Kobe |2 gnd-content | |
| 689 | 0 | 0 | |a Halbleiter |0 (DE-588)4022993-2 |D s |
| 689 | 0 | 1 | |a Verunreinigung |0 (DE-588)4188107-2 |D s |
| 689 | 0 | |5 DE-604 | |
| 689 | 1 | 0 | |a Halbleiter |0 (DE-588)4022993-2 |D s |
| 689 | 1 | 1 | |a Störstelle |0 (DE-588)4193400-3 |D s |
| 689 | 1 | |5 DE-604 | |
| 700 | 1 | |a Taguchi, Tsunemasa |e Sonstige |4 oth | |
| 711 | 2 | |a International Conference on Shallow Impurities in Semiconductors |n 5 |d 1992 |c Kobe |j Sonstige |0 (DE-588)3015665-8 |4 oth | |
| 830 | 0 | |a Materials science forum |v 117/118 |w (DE-604)BV001902147 |9 117/118 | |
| 856 | 4 | 2 | |m Digitalisierung TU Muenchen |q application/pdf |u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=005507572&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |3 Inhaltsverzeichnis |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-005507572 | ||
Datensatz im Suchindex
| _version_ | 1804122732032425984 |
|---|---|
| adam_text | TABLE OF
CONTENTS
L
Recent Review
D*
Centers is High Magnetic Fields and Quantum Wells
J. Zhn, S.G.
Lenie
and T. Pang
Bectrraac States of Thermal Donors in Semiconductors
J. Zhn, S.G.
Lenie
and T. Pang
CAJ.
AmmerJaan and T. Gregorkicwicz
ћргћу
Control in Silicon Crystals for G-Kt Scale
Integration
17
T.Abe
Optical Spectroseopy of Shallow Impurity States in
SemicooÈîctor Quantum Wells
B.Moncmar, P.O. Holtz, C.I. Harris, J.P. Bergman,
E
Kalt,
M
Sondaram, J.L.
Merz, A.C. Gossard, 29
К. КоЫег
aud
Т.
Schweizer
Extremely Heavy
Doping
of Carbon in GaAs and InGaAs
37
it Konagai
Carbon and Sfficon Impurity Centers in GaAs
45
RC. Newman
^Equilibrium Point Defects and Diffusion in GaAs
and Related Compounds
53
U. Gesele, T. Y.
Тал,
M.
Uematsu and
К,
Wada
Säf-CorapensatíoninP.As.andNDopcdZnSc
61
DJ.ChadiandN.Trßullisr
vacandes in
Semiconductors Characterized by Slow Positron
«ω
their Effect on Electrical Properties
67
Í.-L.
Lee
П.
Theory
^tof External
Pressore
and Internal Stress on Impurity
»rasión
in Sfficon
75
0.
Sngino and A. Oshiyama
yrity Vibrations of Carbon-Oxygen Complexes in Crystaffine
silicon gl
С
Kaneta, T. Sasaki and H. ICatayama-Yoshida
«fongElectron Correlation in Si:OV and Si:V
-
an
ab Initio
duster Study-
87
A.B.
van
Oosten, A.M.
Frens and J. Schmidt
ferirai
Model of Shallow Acceptor Resonant ?y2 States in
^bic Semiconductors
93
s. R-Buczko
Quanï I)eep Instabîlîty
of
a Hydrogenîc
Impurity in
All I Shinozuka
τ
,
Iу. Broadening of the Acceptor-Related Near-Gap
^nescence in Semiconductor Alloys 105
J.M.
Langer,
R.
Buczko and A.M. Stoneham
HL Ge
Isotopie
Dependence of Near-Band-Gap Luminescence from
Germanium
.„τι.
G.
Davies, E.C. Lightowlers, V. Ozhogm, K. Itoh,
щ
W.L.
Hansen
and E.E.
Haller
Neutron Transmutation Doping of Isotopically Controlled
Ge
K. Itoh, W.L.
Hansen, E.E.
Haller, J.W. Farmer and
117
V.l.
Ozhogin
Zeeman
and Landau Spectroscopy of Group
Ш
Acceptors
in Germanium
123
G.J.
Takács, R.E.M.
Vickers, P. Fisher and C.A. Freeth
Zeeman
and Piezo-Zeeman Spectroscopy of Zinc and Copper
Acceptors in Germanium
129
A.D.
Warner,
D.S.
Ryan, P. Fisher and
CA.
Freeth
rv.si
Hydrogen-Induced Isotope Shift of
Dipole
Transitions of
Shallow Donors in Silicon
135
J.
Härtung
and J. Weber
The Structure of a Metastable Luminescent Defect in
Sulphur-doped Silicon
141
M. Singh, G. Davies, E.C. Lightowlers and G.D.
Waťkins
Iron-, Manganese- and Chromium-Indium Pairs in Silicon
147
U. Reislohner, S.
Schwarz
and W.
Witthuhn
Electrical Characteristics of
В
Doped Ge Film Epitaxially
Grown on Si Using Ultradean Chemical Vapor Deposition
153
K. Goto, J. Murota and
S. Ono
Self-Modulating Incorporation of Sb in Si/SiGe Superlattices
during Molecular Beam Epitaxial Growth
K. Fujita, S. Fukatsu,
N.
Usami,
H.
Yaguchi,
Y. Shiraki
159
and
R.
Ito
Strong Electron-Phonon Interaction of a Hydrogen-Carbon
Complex and the Motion of Isolated Hydrogen in Si
Y.
Kamimura,
T. Okashita, Y.
Nishiyama and
165
F. Hashimoto
Piezo-Magneto-Resistivity of Si:B in the Hopping Regime
171
M. Stohr, P. Janiszewski and J.A. Chroboczek
Photoluminescence
Measurements of a Beryllium-Related Deep
Center in Silicon
J.D. Campion, K.G. McGuigan, M.O. Henry and
177
M.H.
Nazaré
Accurate Evaluation Techniques of the Interstitial Oxygen
Concentrations in the Oxygen Precipitated and the Low-Resistivity
CZ-Si Crystals
183
Y. Kitagawara, K. Takamizawa and T. Takenaka
Measurement of Interstitial Oxygen Striations in Silicon
Single Crystals Using the Micro-FTIR Method
189
E. lino, I. Fusegawa and H. Yamagishi
The Dynamics of the Non-Radiative Triplet State of the
(V-O) Defect in SilicomEvidence for a Radical Pair
Mechanism
A.M. Frens, M.E. Braat,
A.B.
van
Oosten
and J. Schmidt
195
Carbon-Oxygen Complexes and Oxygen Precipitation in Silicon
Crystals Observed by Low-Temperature Infrared Absorption
Y. Shirakawa, H. Yamada-Kaneta and T. Ogawa
201
Shifts of the Infrared Absorption Peaks of Oxygen in Silicon
Caused by Germanium-Doping
H. Yamada-Kaneta, C. Kaneta, T. Ogawa 2°7
Observation of Five Additional Thermal Donors and Kinetics
of Thermal Donor Formation and Annihilation at Temperatures
above SOOT in Czochralski-Grown Si
W.
Götz,
G.
Pensi
and
W.
Zulehner 213
Ultrashallow Hydrogen-Like Thermal Donors in Silicon
Crystals
А. Нага,
M.
Aold,
T.
Fukuda
and A. Ohsawa 219
Formation of Oxygen Clusters in Quenched Cz- and MCz-Si
Crystals
A.Ikari.H.Haga.O.Yoda.A.UedonoandY.Ujihira 225
Simulation of Oxygen Precipitation and Denuded Zone
Formation during Thermal Anneals
M. Schrems 231
Characterization of Excimer Laser Annealing of Arsenic
Implanted Silicon
T. Akane, S. Mastumoto and I. Mizushima 23
Heavily Arsenic Doping into Si by ArF Excimer Laser
Irradiation using Tertiarybutylarsine (tBAs)
S. Chichibu, T. Nii, T. Akane and S. Matsumoto 24j
Effective-Mass-like Excited Pseudo-Donor States of a Complex
Metastable Defect in Silicon
J.H.
Svensson,
E.
Janzen,
О.
Kordina
and
В.
Monemar
Zeeman
Study of
735
nm
Photoluminescence Band in Iron-Doped
Silicon
Mi. Calao
and M.C.
Carmo
_
255
Thermal Process Dependence of Chromium Donor/Acceptor in
Silicon
M. Takiyama, S. Ohtsuka and M. Tachimori 261
Co-Acceptor Complexes in Si 267
A.-M. Van Bavel and G. Langouche
Defect Observation in Silicon Surface Layers by Surface Wave
Resonance in RHEED o^o
K.Ueda
Differential Hall-Effect Spectroscopy of Rare-Earth
Impurities (Ce,Er) in Silicon 279
H. Nakayama, A. Matsuura, M. Kohno and T. Nishino
ν.πΐ-ν
Dispersion
in Bound
Exciten
Binding
Energy
via Coupling
to Interface Localization Potentials in GaAs/AlGaAs Quantum
Wells
„ .
CI.
Harris, B. Monemar, P.O. Holtz, M.
Sundaram, 285
J.L.
Merz
and
A.C.
Gossard
Impurities and Point Defects in GaAs and AlAs Grown by
Atomic Layer Epitaxy
291
K.
Baita,
H. Yokoyama
and
N.
boue
Partial Ferromagnetic Order in
p
-Туре
(bi,Mn)As Diluted
Magnetic
Ш
-V
Semiconductors
H. Ohno, H. Munekata, T. Penney, S.
von
Moinar
and 297
L.L. Chang
Yb Intra^f-Shell Luminescence in Yb- and Zn-Doped InP 303
A. Taguchi and K. Takahei
Infrared Absorption Lines in Hydrogen-Plasma Treated
Se-Doped GaAs
399
J.H.
Svensson
and J. Weber
Monoenergetic Positron Beam Study of Heavily Si-doped GaAs
Grown by MOCVD using Tertiarybutylarsine
S. Chichibu, A. Iwai, Y. Nakahara, S. Matsumoto,
3^5
H. Higuchi, L. Wei and S. Tanigawa
Anti-Stokes
Photoluminescence
Related to the Deep Donor
States in Si Double
б
-Doped
AlxGaj.xAs
321
M.R. Jurmarkar, E. Yamaguchi and
T. Saku
Shallow Donor Bound State in an AlAs/GaAs Quantum Well with
Γ
-
X Mixing
327
E.A.
de Andrada
e
Silva, D.
Wang and
1С.
da Cunha
Lima
Optical Studies of
Excitons
in Be-Doped GaAs/AIGaAs Symmetric
Coupled Double Quantum Wells
Q.X. Zhao, T. Westgaard, B. Monemar, B.O. Fimland
333
and K.
Johannessen
Hydrogen Passivation of Shallow Impurities in GaAs/AIGaAs
Quantum Wells
339
CI.
Harris, M. Stutzrnann and K.
Kohier
Multi-Level Dynamics between Below-Gap States in Heavily
Doped Quantum Wells by Time-Resolved and Selectively-
Excited
Photoluminescence
345
N.
Kamata,
E.
Kanoh,
T.
Ohsałd and
К.
Yamada
Deep Electron Trap Studies of GaAlAs/GaAs Single and
Multiple Quantum Well Lasers Fabricated on Si Substrate by
MOCVD 351
L. Liwu, Z. Jie, Z. Wanra and M. Umeno
Optical Absorption Lines in Heat-Treated GaAs
357
M. Suezawa and K. Sumino
Te-Related Donor States in AlxGa!.xAs
36З
J. Kang, Q. Huang, K. Hoshikawa and T. Fukueda
Shallow Donor States in InP -Electron-Spin-Resonance Induced
Overhauser Shift- 3g9
K. Murakami, T. Ohyanagi, K.
Hara
and K. Masuda
Donor Concentration Dependence of GaP Luminescence
T.
Monteiro,
E.
Pereira,
F.
Domínguez-
Adame
and
J.
Piqueras
Various Configurations of Silicon-Related Defects in GaAs
Y.Okada and K.
Fujii
381
Si Doping of GaAs Grown by Molecular Beam Epitaxy on
Different Substrate Orientations
L.
Pavesi,
F.
Piazza, I. Harrison and M. Henini
387
The Effect of Arsenic Vapor Pressure on Site Distribution
of Silicon in Gallium Arsenide Grown by the Gradient Freeze
Method
K.
Fujii,
F.
Orito and H. Fujita 393
Fermi Level Effect and Vacancy Contribution to the Out-
diffusion of Si in GaAs
H.-M.You.U.M.GoseleandT.Y.Tan 3
Carbon in
LEC
Grown GaAs Crystals
Y.
Otoki,
M.
Sahara,
S.
Shinzawa and S.
Kuma
4Ü5
The Study of Defects Induced by the Implantation of
О
Ions into GaAs by a Slow Positron Beam
S.
Fujii,
L.
Wei and
S.
Tanigawa 411
Impurity Diffusion into GaAs through the S1O2 Protective
Layers
D.K. Gautam, Y. Shimogaki, Y.
Nakano
and K.
Tada
^1
Electron Beam Doping of Si and Zn Impurities into GaAs
T.Wada.M.TakedaandA.Takeda
Effect of Hydrogen Passivation on Lightly
η
-Doped GaAs
CJ. Chen, Y.H. Chang, T.C. Chen,
S.H. Li, Y.F.
Chen
and
H.H.
Lin
42У
Free-Carrier Saturation in
Ш
-V
Compound Semiconductors 435
E. Tokumitsu and M. Konagai
The Sn- and Si-DX Centre Properties in Double Doped
(Al,Ga)As
D.K. Maude, U.
Willke, M.L.
Fille,
P.
Gibart
and
¿¿л
J.C.
Portal
Multiplicity and Lattice Relaxation of DX Center in AIGaAs:Si
Studied by Electron Emission Spectra under Pressure
K. Takarabe, H. Ashizawa, S.
Minomura,
H.
Kato,
^
Y.
Watanabe and
К.
Matsuda
rerastent Photoconductivity and Electric-Field Quenching
«elated with DX Centers in AlGaAs/GaAs Heterostructure
Aoki
Photo-Induced Simultaneous Transformations of Shallow Donors
and EL2 States in Semi-Insulating GaAs
459
T. Shimizu, H. Kobori, T. Ohyama and E. Otsuka
rnotoluminescence Study of Yb-Doped biP under Low Temperature
and Pressure 465
K. Takarabe, S.
Minomura,
A. Taguchi and K. Takahei
Identification of Residual Donors in CdTe Grown by the
ndgman Method
471
S.
Seto
and A. Tanaka
«ar-infrared Magneto-Absorption of Donors in Epitaxial ZnSe
LayersonGaAs
R· Komeda, H.
Nakata
and T. Ohyama
Origin of the Carrier Reduction by Annealing in
η
-Type
ZnSe
T. Miyajiraa, H. Okuyama, K. Akimoto, L. Wei and
S. Tanigawa 483
Vu.
Widegap and Exotic Materials
Photoluminescence
Characterization of Defects in CuGaS2
Crystals
._„
S. Shirakata, T.
Miyazaki
and S. bomura
Ч0У
Hall Effect and Infrared Absorption Measurements on Nitrogen
Donors in
4H-SÍC
W.
Götz,
Α.
Schoner,
G.
Pensi,
W.
Suttrop,
W.J.
Choyke,
R.
Stein
and
S.
Leibenzeder
Characterization of Defects in As-Grown and Electron-Irradiated
ЗС
-SiC
Epilayers by Using Slow Positron
H. Itoh, M. Yoshikawa, I Nashiyama, L. Wei, S. Tanigawa,
S.
Misawa,
H.
Okumura
and
S.
Yoshida su
Localized-Pair recombination Nature of Visible Luminescence
from Anodized Porous-Si
,_
Y. Mochizuki and M. Mizuta
Visible
Photoluminescence
of Porous Silicon
,. ,
H. Nishitani, H.
Nakata,
T.
Ohyama and
Y. Fujiwara
VIU.
Short Communication
Photoluminescence
due to Zn-0 Complexes in Silicon
J.D. Campion, M.O. Henry, K.G. McGuigan and
ς1
Q
E.C. Lightowlers
э
High-Resolution EPR Spectroscopy of the Si-NL
10
Thermal
Donor
T. Gregorkiewicz, H.H.P.Th. Bekamn,
CAJ.
Ammerlaan, „i
W.
Knap, L.C.
Brunei and
G.
Martinez
Morphology of Oxide Precipitates in Czochralski Silicon
Crystals 3
K. Sueoka,
N. Ľceda,
T.
Yamamoto and S. Kobayashi
Site Change of Li Atoms in ZnSe by
Photoirradiation o5
M. Ichimura, T.
Wada, Sz.
Fujita and Sg. Fujita
Characterization of Impurities in Si(C2Hc0)4 for
Efficient
SiO2 Production in ULSI Technology
-„
T.
Danno
and K. Seki ^
Author Index 529
Keyword Index 533
|
| any_adam_object | 1 |
| building | Verbundindex |
| bvnumber | BV008336705 |
| callnumber-first | T - Technology |
| callnumber-label | TA401 |
| callnumber-raw | TA401.3 |
| callnumber-search | TA401.3 |
| callnumber-sort | TA 3401.3 |
| callnumber-subject | TA - General and Civil Engineering |
| classification_rvk | UP 3250 |
| classification_tum | PHY 696f |
| ctrlnum | (OCoLC)27704826 (DE-599)BVBBV008336705 |
| dewey-full | 541.341 |
| dewey-hundreds | 500 - Natural sciences and mathematics |
| dewey-ones | 541 - Physical chemistry |
| dewey-raw | 541.341 |
| dewey-search | 541.341 |
| dewey-sort | 3541.341 |
| dewey-tens | 540 - Chemistry and allied sciences |
| discipline | Chemie / Pharmazie Physik |
| format | Conference Proceeding Book |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>02262nam a2200505 cb4500</leader><controlfield tag="001">BV008336705</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20230811 </controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">931122s1993 ad|| |||| 10||| eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">0878496548</subfield><subfield code="9">0-87849-654-8</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)27704826</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV008336705</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakddb</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-91G</subfield><subfield code="a">DE-703</subfield><subfield code="a">DE-83</subfield><subfield code="a">DE-11</subfield><subfield code="a">DE-706</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">TA401.3</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">541.341</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">UP 3250</subfield><subfield code="0">(DE-625)146380:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">PHY 696f</subfield><subfield code="2">stub</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Shallow impurities in semiconductors</subfield><subfield code="b">proceedings of the fifth International Conference on Shallow Impurities in Semiconductors "Physics and Control of Impurities", International Conference Center Kobe, Japan, 5 to 8 August 1992</subfield><subfield code="c">ed. Tsunemasa Taguchi</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Aedermannsdorf, Switzerland</subfield><subfield code="b">Trans Tech Publ.</subfield><subfield code="c">1993</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">528 S.</subfield><subfield code="b">Ill., graph. Darst.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="1" ind2=" "><subfield code="a">Materials science forum</subfield><subfield code="v">117/118</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Literaturangaben</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Semiconductors</subfield><subfield code="x">Defects</subfield><subfield code="v">Congresses</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Semiconductors</subfield><subfield code="x">Impurity distribution</subfield><subfield code="v">Congresses</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Störstelle</subfield><subfield code="0">(DE-588)4193400-3</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleiter</subfield><subfield code="0">(DE-588)4022993-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Verunreinigung</subfield><subfield code="0">(DE-588)4188107-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="655" ind1=" " ind2="7"><subfield code="0">(DE-588)1071861417</subfield><subfield code="a">Konferenzschrift</subfield><subfield code="y">1992</subfield><subfield code="z">Kobe</subfield><subfield code="2">gnd-content</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Halbleiter</subfield><subfield code="0">(DE-588)4022993-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Verunreinigung</subfield><subfield code="0">(DE-588)4188107-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="1" ind2="0"><subfield code="a">Halbleiter</subfield><subfield code="0">(DE-588)4022993-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2="1"><subfield code="a">Störstelle</subfield><subfield code="0">(DE-588)4193400-3</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Taguchi, Tsunemasa</subfield><subfield code="e">Sonstige</subfield><subfield code="4">oth</subfield></datafield><datafield tag="711" ind1="2" ind2=" "><subfield code="a">International Conference on Shallow Impurities in Semiconductors</subfield><subfield code="n">5</subfield><subfield code="d">1992</subfield><subfield code="c">Kobe</subfield><subfield code="j">Sonstige</subfield><subfield code="0">(DE-588)3015665-8</subfield><subfield code="4">oth</subfield></datafield><datafield tag="830" ind1=" " ind2="0"><subfield code="a">Materials science forum</subfield><subfield code="v">117/118</subfield><subfield code="w">(DE-604)BV001902147</subfield><subfield code="9">117/118</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="m">Digitalisierung TU Muenchen</subfield><subfield code="q">application/pdf</subfield><subfield code="u">http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=005507572&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA</subfield><subfield code="3">Inhaltsverzeichnis</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-005507572</subfield></datafield></record></collection> |
| genre | (DE-588)1071861417 Konferenzschrift 1992 Kobe gnd-content |
| genre_facet | Konferenzschrift 1992 Kobe |
| id | DE-604.BV008336705 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T17:18:33Z |
| institution | BVB |
| institution_GND | (DE-588)3015665-8 |
| isbn | 0878496548 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-005507572 |
| oclc_num | 27704826 |
| open_access_boolean | |
| owner | DE-91G DE-BY-TUM DE-703 DE-83 DE-11 DE-706 |
| owner_facet | DE-91G DE-BY-TUM DE-703 DE-83 DE-11 DE-706 |
| physical | 528 S. Ill., graph. Darst. |
| publishDate | 1993 |
| publishDateSearch | 1993 |
| publishDateSort | 1993 |
| publisher | Trans Tech Publ. |
| record_format | marc |
| series | Materials science forum |
| series2 | Materials science forum |
| spelling | Shallow impurities in semiconductors proceedings of the fifth International Conference on Shallow Impurities in Semiconductors "Physics and Control of Impurities", International Conference Center Kobe, Japan, 5 to 8 August 1992 ed. Tsunemasa Taguchi Aedermannsdorf, Switzerland Trans Tech Publ. 1993 528 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Materials science forum 117/118 Literaturangaben Semiconductors Defects Congresses Semiconductors Impurity distribution Congresses Störstelle (DE-588)4193400-3 gnd rswk-swf Halbleiter (DE-588)4022993-2 gnd rswk-swf Verunreinigung (DE-588)4188107-2 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 1992 Kobe gnd-content Halbleiter (DE-588)4022993-2 s Verunreinigung (DE-588)4188107-2 s DE-604 Störstelle (DE-588)4193400-3 s Taguchi, Tsunemasa Sonstige oth International Conference on Shallow Impurities in Semiconductors 5 1992 Kobe Sonstige (DE-588)3015665-8 oth Materials science forum 117/118 (DE-604)BV001902147 117/118 Digitalisierung TU Muenchen application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=005507572&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Shallow impurities in semiconductors proceedings of the fifth International Conference on Shallow Impurities in Semiconductors "Physics and Control of Impurities", International Conference Center Kobe, Japan, 5 to 8 August 1992 Materials science forum Semiconductors Defects Congresses Semiconductors Impurity distribution Congresses Störstelle (DE-588)4193400-3 gnd Halbleiter (DE-588)4022993-2 gnd Verunreinigung (DE-588)4188107-2 gnd |
| subject_GND | (DE-588)4193400-3 (DE-588)4022993-2 (DE-588)4188107-2 (DE-588)1071861417 |
| title | Shallow impurities in semiconductors proceedings of the fifth International Conference on Shallow Impurities in Semiconductors "Physics and Control of Impurities", International Conference Center Kobe, Japan, 5 to 8 August 1992 |
| title_auth | Shallow impurities in semiconductors proceedings of the fifth International Conference on Shallow Impurities in Semiconductors "Physics and Control of Impurities", International Conference Center Kobe, Japan, 5 to 8 August 1992 |
| title_exact_search | Shallow impurities in semiconductors proceedings of the fifth International Conference on Shallow Impurities in Semiconductors "Physics and Control of Impurities", International Conference Center Kobe, Japan, 5 to 8 August 1992 |
| title_full | Shallow impurities in semiconductors proceedings of the fifth International Conference on Shallow Impurities in Semiconductors "Physics and Control of Impurities", International Conference Center Kobe, Japan, 5 to 8 August 1992 ed. Tsunemasa Taguchi |
| title_fullStr | Shallow impurities in semiconductors proceedings of the fifth International Conference on Shallow Impurities in Semiconductors "Physics and Control of Impurities", International Conference Center Kobe, Japan, 5 to 8 August 1992 ed. Tsunemasa Taguchi |
| title_full_unstemmed | Shallow impurities in semiconductors proceedings of the fifth International Conference on Shallow Impurities in Semiconductors "Physics and Control of Impurities", International Conference Center Kobe, Japan, 5 to 8 August 1992 ed. Tsunemasa Taguchi |
| title_short | Shallow impurities in semiconductors |
| title_sort | shallow impurities in semiconductors proceedings of the fifth international conference on shallow impurities in semiconductors physics and control of impurities international conference center kobe japan 5 to 8 august 1992 |
| title_sub | proceedings of the fifth International Conference on Shallow Impurities in Semiconductors "Physics and Control of Impurities", International Conference Center Kobe, Japan, 5 to 8 August 1992 |
| topic | Semiconductors Defects Congresses Semiconductors Impurity distribution Congresses Störstelle (DE-588)4193400-3 gnd Halbleiter (DE-588)4022993-2 gnd Verunreinigung (DE-588)4188107-2 gnd |
| topic_facet | Semiconductors Defects Congresses Semiconductors Impurity distribution Congresses Störstelle Halbleiter Verunreinigung Konferenzschrift 1992 Kobe |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=005507572&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| volume_link | (DE-604)BV001902147 |
| work_keys_str_mv | AT taguchitsunemasa shallowimpuritiesinsemiconductorsproceedingsofthefifthinternationalconferenceonshallowimpuritiesinsemiconductorsphysicsandcontrolofimpuritiesinternationalconferencecenterkobejapan5to8august1992 AT internationalconferenceonshallowimpuritiesinsemiconductorskobe shallowimpuritiesinsemiconductorsproceedingsofthefifthinternationalconferenceonshallowimpuritiesinsemiconductorsphysicsandcontrolofimpuritiesinternationalconferencecenterkobejapan5to8august1992 |