Hydrogenated amorphous silicon alloy deposition processes:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
New York u.a.
Dekker
1993
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| Schriftenreihe: | Applied physics
1 |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | XIV, 327 S. graph. Darst. |
| ISBN: | 0824791460 |
Internformat
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Datensatz im Suchindex
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| adam_text | HYDROGENATED AMORPHOUS SILICON ALLOY DEPOSITION PROCESSES WERNER LUFT *
Y. SIMON TSUO NATIONAL RENEWABLE ENERGY LABORATORY GOLDEN, COLORADO
MARCEL DEKKER, INC. NEW YORK BASEL HONG KONG CONTENTS PREFACE III LIST
OF SYMBOLS XI ACRONYMS XIII 1. INTRODUCTION 1 1.1 POTENTIAL APPLICATIONS
OF AMORPHOUS SILICON-BASED ALLOYS 1 1.2 DEPOSITION PROCESSES FOR
AMORPHOUS SILICON- BASED ALLOYS 6 2. MATERIAL CHARACTERISTICS OF
AMORPHOUS SILICON- BASED ALLOYS 10 2.1 DEFECTS IN AMORPHOUS
SILICON-BASED ALLOYS 13 2.2 CHARACTERISTICS OF HYDROGENATED AMOROHOUS
SILICON 20 2.3 CHARACTERISTICS OF HYDROGENATED AMORPHOUS SILICON
GERMANIUM 27 2.4 CHARACTERISTICS OF HYDROGENATED AMORPHOUS SILICON
CARBIDE 45 2.5 CHARACTERISTICS OF HYDROGENATED AMORPHOUS SILICON NITRIDE
AND HYDROGENATED AMORPHOUS SILICON TIN 57 2.6 METASTABLE PROPERTIES OF
AMORPHOUS SILICON-BASED ALLOYS 63 3. FILM DIAGNOSTIC MEASUREMENTS 75 3.1
OPTICAL MEASUREMENTS 76 3.2 ELECTRICAL MEASUREMENTS 86 3.3 PHOTOELECTRIC
MEASUREMENTS 89 3.4 MECHANICAL MEASUREMENTS 92 3.5 CHEMICAL ANALYSIS
MEASUREMENTS 94 3.6 MICROSCOPIC MEASUREMENTS 96 4. CONVENTIONAL GLOW
DISCHARGE DEPOSITION PROCESSES FOR AMORPHOUS SILICON-BASED ALLOYS 99 4.1
PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION 100 4.2 PLASMA DIAGNOSTICS 103
4.3 FEED-GAS ANALYSIS 107 VLL VUL CONTENTS DESIGN OF GLOW DISCHARGE
DEPOSITION REACTORS 5.1 GEOMETRY 5.2 BIAS CONTROL 5.3 PLASMA CONFINEMENT
5.4 HOT WALLS 5.5 CONTAMINATION FROM IMPURITIES GLOW DISCHARGE
DEPOSITION PARAMETERS FOR HYDROGENATED AMORPHOUS SILICON 6.1 POWER
DENSITY 6.2 SUBSTRATE TEMPERATURE 6.3 FEED-GAS CONCENTRATION 6.4
PRESSURE 6.5 GAS FLOW RATE 6.6 MAGNETIC FIELD 6.7 FREQUENCY 6.8
SUBSTRATE EFFECTS 6.9 DEPOSITION RATE 108 109 116 119 121 122 124 125
128 130 131 131 133 133 134 139 GLOW DISCHARGE DEPOSITION REACTION
CHEMISTRY FOR HYDROGENATED AMORPHOUS SILICON 145 7.1 GENERAL EFFECTS OF
THE GAS PHASE AND PLASMA SPECIES 146 7.2 EFFECTS OF DILUENTS 150 7.3
REACTIONS AT THE GROWING FILM SURFACE 156 7.4 INTENTIONAL CONTROL OF THE
GROWING FILM SURFACE 159 7.5 MODELS OF SILANE GLOW DISCHARGE DEPOSITION
161 MODIFICATIONS OF CONVENTIONAL GLOW DISCHARGE PROCESSES AND EQUIPMENT
166 8.1 THE NEED FOR ALTERNATIVE DEPOSITION PROCESSES 166 8.2 FEED-GAS
MODIFICATIONS 168 8.3 SEPARATED PLASMA TRIODE GLOW DISCHARGE 170 8.4
CONTROLLED PLASMA MAGNETRON (CPM) GLOW DISCHARGE 171 8.5 LOW- AND
HIGH-FREQUENCY GLOW DISCHARGES 171 8.6 PULSED AND SQUARE-WAVE DISCHARGES
173 8.7 PERIODIC ETCHING DEPOSITION (PED) GLOW DISCHARGE 174 CONTENTS IX
8.8 ILLUMINATED GLOW DISCHARGE 176 9. REMOTE-PLASMA-ASSISTED CHEMICAL
VAPOR DEPOSITION METHODS 177 9.1 GLOW DISCHARGE REMOTE-PLASMA CVD 178
9.2 ELECTRON-CYCLOTRON-RESONANCE MICROWAVE REMOTE-PLASMA CVD 178 9.3
MICROWAVE-EXCITED REMOTE-PLASMA CVD 181 9.4 HYDROGEN-RADICAL-ENHANCED
CVD 183 10. PHOTOCHEMICAL VAPOR DEPOSITION 185 11. THERMALLY-INDUCED
CHEMICAL VAPOR DEPOSITION 188 11.1 THERMAL CHEMICAL VAPOR DEPOSITION 188
11.2 HOMOGENEOUS CHEMICAL VAPOR DEPOSITION (HOMOCVD) 190 11.3 HOT-WIRE
CHEMICAL VAPOR DEPOSITION 190 11.4 PHOTOTHERMAL CHEMICAL VAPOR
DEPOSITION 193 11.5 SPONTANEOUS CHEMICAL VAPOR DEPOSITION 194 12.
PHYSICAL VAPOR DEPOSITION METHODS 196 12.1 EVAPORATION 196 12.2
SPUTTERING 197 12.3 POSTHYDROGENATION METHODS 199 13. ETCHING PROPERTIES
OF AMORPHOUS SILICON-BASED ALLOYS 203 13.1 WET CHEMICAL ETCHING 204 13.2
PLASMA ETCHING 206 13.3 VAPOR ETCHING 208 13.4 ION BEAM PROCESSING 208
13.5 DOPING EFFECTS 209 13.6 OXIDATION 209 14. COMPARISON OF ALTERNATIVE
DEPOSITION METHODS 211 15. MICROCRYSTALLINE SILICON AND SILICON CARBIDE
217 15.1 MICROCRYSTALLINE FILM DEPOSITION 219 15.2 DOPED
MICROCRYSTALLINE FILMS 224 15.3 COMPOSITIONALLY GRADED BUFFER LAYERS 233
15.4 POST-DEPOSITION CRYSTALLIZATION METHODS 234 X CONTENTS 16. SAFETY
16.1 16.2 16.3 16.4 HAZARDS CODES AND REGULATIONS EQUIPMENT AND
FACILITIES OPERATION 238 238 238 239 239 243 INDEX 317
|
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| discipline | Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
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| indexdate | 2024-07-09T17:18:26Z |
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| isbn | 0824791460 |
| language | English |
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| physical | XIV, 327 S. graph. Darst. |
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| publisher | Dekker |
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| series | Applied physics |
| series2 | Applied physics |
| spelling | Luft, Werner Verfasser aut Hydrogenated amorphous silicon alloy deposition processes Werner Luft ; Y. Simon Tsuo New York u.a. Dekker 1993 XIV, 327 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Applied physics 1 Plasma-enhanced chemical vapor deposition Silicon alloys Thin film devices Design and construction Thin films Electric properties Thin films Optical properties Amorpher Zustand (DE-588)4306087-0 gnd rswk-swf Halbleiterschicht (DE-588)4158812-5 gnd rswk-swf Dünne Schicht (DE-588)4136925-7 gnd rswk-swf Amorpher Halbleiter (DE-588)4001756-4 gnd rswk-swf Silicium (DE-588)4077445-4 gnd rswk-swf Silicium (DE-588)4077445-4 s Dünne Schicht (DE-588)4136925-7 s Amorpher Zustand (DE-588)4306087-0 s DE-604 Halbleiterschicht (DE-588)4158812-5 s Amorpher Halbleiter (DE-588)4001756-4 s Tsuo, Y. S. Sonstige oth Applied physics 1 (DE-604)BV008330721 1 GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=005503260&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Luft, Werner Hydrogenated amorphous silicon alloy deposition processes Applied physics Plasma-enhanced chemical vapor deposition Silicon alloys Thin film devices Design and construction Thin films Electric properties Thin films Optical properties Amorpher Zustand (DE-588)4306087-0 gnd Halbleiterschicht (DE-588)4158812-5 gnd Dünne Schicht (DE-588)4136925-7 gnd Amorpher Halbleiter (DE-588)4001756-4 gnd Silicium (DE-588)4077445-4 gnd |
| subject_GND | (DE-588)4306087-0 (DE-588)4158812-5 (DE-588)4136925-7 (DE-588)4001756-4 (DE-588)4077445-4 |
| title | Hydrogenated amorphous silicon alloy deposition processes |
| title_auth | Hydrogenated amorphous silicon alloy deposition processes |
| title_exact_search | Hydrogenated amorphous silicon alloy deposition processes |
| title_full | Hydrogenated amorphous silicon alloy deposition processes Werner Luft ; Y. Simon Tsuo |
| title_fullStr | Hydrogenated amorphous silicon alloy deposition processes Werner Luft ; Y. Simon Tsuo |
| title_full_unstemmed | Hydrogenated amorphous silicon alloy deposition processes Werner Luft ; Y. Simon Tsuo |
| title_short | Hydrogenated amorphous silicon alloy deposition processes |
| title_sort | hydrogenated amorphous silicon alloy deposition processes |
| topic | Plasma-enhanced chemical vapor deposition Silicon alloys Thin film devices Design and construction Thin films Electric properties Thin films Optical properties Amorpher Zustand (DE-588)4306087-0 gnd Halbleiterschicht (DE-588)4158812-5 gnd Dünne Schicht (DE-588)4136925-7 gnd Amorpher Halbleiter (DE-588)4001756-4 gnd Silicium (DE-588)4077445-4 gnd |
| topic_facet | Plasma-enhanced chemical vapor deposition Silicon alloys Thin film devices Design and construction Thin films Electric properties Thin films Optical properties Amorpher Zustand Halbleiterschicht Dünne Schicht Amorpher Halbleiter Silicium |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=005503260&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
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