Operation and modeling of the MOS transistor:
Saved in:
| Main Author: | |
|---|---|
| Format: | Book |
| Language: | English |
| Published: |
New York u.a.
McGraw-Hill
1988
|
| Edition: | 1. print. |
| Series: | McGraw-Hill international editions : Electrical engineering series
McGraw-Hill series in electrical engineering : VLSI, electronics, and electronic circuits |
| Subjects: | |
| Physical Description: | XX, 505 S. |
| ISBN: | 007065381X 0071003320 |
Staff View
MARC
| LEADER | 00000nam a2200000 c 4500 | ||
|---|---|---|---|
| 001 | BV008306145 | ||
| 003 | DE-604 | ||
| 005 | 20040205 | ||
| 007 | t | ||
| 008 | 931005s1988 |||| 00||| eng d | ||
| 020 | |a 007065381X |9 0-07-065381-X | ||
| 020 | |a 0071003320 |9 0-07-100332-0 | ||
| 035 | |a (OCoLC)393822758 | ||
| 035 | |a (DE-599)BVBBV008306145 | ||
| 040 | |a DE-604 |b ger |e rakwb | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-898 |a DE-29T |a DE-83 | ||
| 050 | 0 | |a TK7871 | |
| 084 | |a ZN 4870 |0 (DE-625)157415: |2 rvk | ||
| 100 | 1 | |a Tsividis, Yannis P. |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Operation and modeling of the MOS transistor |c Yannis P. Tsividis |
| 250 | |a 1. print. | ||
| 264 | 1 | |a New York u.a. |b McGraw-Hill |c 1988 | |
| 300 | |a XX, 505 S. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 0 | |a McGraw-Hill international editions : Electrical engineering series | |
| 490 | 0 | |a McGraw-Hill series in electrical engineering : VLSI, electronics, and electronic circuits | |
| 650 | 4 | |a Mathematisches Modell | |
| 650 | 4 | |a Metal oxide semiconductors |x Mathematical models | |
| 650 | 0 | 7 | |a MOS |0 (DE-588)4130209-6 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a MOS-FET |0 (DE-588)4207266-9 |2 gnd |9 rswk-swf |
| 689 | 0 | 0 | |a MOS-FET |0 (DE-588)4207266-9 |D s |
| 689 | 0 | |5 DE-604 | |
| 689 | 1 | 0 | |a MOS |0 (DE-588)4130209-6 |D s |
| 689 | 1 | |8 1\p |5 DE-604 | |
| 940 | 1 | |q TUB-nb | |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-005487016 | ||
| 883 | 1 | |8 1\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
Record in the Search Index
| _version_ | 1804122697513304064 |
|---|---|
| any_adam_object | |
| author | Tsividis, Yannis P. |
| author_facet | Tsividis, Yannis P. |
| author_role | aut |
| author_sort | Tsividis, Yannis P. |
| author_variant | y p t yp ypt |
| building | Verbundindex |
| bvnumber | BV008306145 |
| callnumber-first | T - Technology |
| callnumber-label | TK7871 |
| callnumber-raw | TK7871 |
| callnumber-search | TK7871 |
| callnumber-sort | TK 47871 |
| callnumber-subject | TK - Electrical and Nuclear Engineering |
| classification_rvk | ZN 4870 |
| ctrlnum | (OCoLC)393822758 (DE-599)BVBBV008306145 |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| edition | 1. print. |
| format | Book |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01513nam a2200445 c 4500</leader><controlfield tag="001">BV008306145</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20040205 </controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">931005s1988 |||| 00||| eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">007065381X</subfield><subfield code="9">0-07-065381-X</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">0071003320</subfield><subfield code="9">0-07-100332-0</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)393822758</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV008306145</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-898</subfield><subfield code="a">DE-29T</subfield><subfield code="a">DE-83</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">TK7871</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">ZN 4870</subfield><subfield code="0">(DE-625)157415:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Tsividis, Yannis P.</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Operation and modeling of the MOS transistor</subfield><subfield code="c">Yannis P. Tsividis</subfield></datafield><datafield tag="250" ind1=" " ind2=" "><subfield code="a">1. print.</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">New York u.a.</subfield><subfield code="b">McGraw-Hill</subfield><subfield code="c">1988</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">XX, 505 S.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="0" ind2=" "><subfield code="a">McGraw-Hill international editions : Electrical engineering series</subfield></datafield><datafield tag="490" ind1="0" ind2=" "><subfield code="a">McGraw-Hill series in electrical engineering : VLSI, electronics, and electronic circuits</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Mathematisches Modell</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Metal oxide semiconductors</subfield><subfield code="x">Mathematical models</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">MOS</subfield><subfield code="0">(DE-588)4130209-6</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">MOS-FET</subfield><subfield code="0">(DE-588)4207266-9</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">MOS-FET</subfield><subfield code="0">(DE-588)4207266-9</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="1" ind2="0"><subfield code="a">MOS</subfield><subfield code="0">(DE-588)4130209-6</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2=" "><subfield code="8">1\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="940" ind1="1" ind2=" "><subfield code="q">TUB-nb</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-005487016</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">1\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield></record></collection> |
| id | DE-604.BV008306145 |
| illustrated | Not Illustrated |
| indexdate | 2024-07-09T17:18:00Z |
| institution | BVB |
| isbn | 007065381X 0071003320 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-005487016 |
| oclc_num | 393822758 |
| open_access_boolean | |
| owner | DE-898 DE-BY-UBR DE-29T DE-83 |
| owner_facet | DE-898 DE-BY-UBR DE-29T DE-83 |
| physical | XX, 505 S. |
| psigel | TUB-nb |
| publishDate | 1988 |
| publishDateSearch | 1988 |
| publishDateSort | 1988 |
| publisher | McGraw-Hill |
| record_format | marc |
| series2 | McGraw-Hill international editions : Electrical engineering series McGraw-Hill series in electrical engineering : VLSI, electronics, and electronic circuits |
| spelling | Tsividis, Yannis P. Verfasser aut Operation and modeling of the MOS transistor Yannis P. Tsividis 1. print. New York u.a. McGraw-Hill 1988 XX, 505 S. txt rdacontent n rdamedia nc rdacarrier McGraw-Hill international editions : Electrical engineering series McGraw-Hill series in electrical engineering : VLSI, electronics, and electronic circuits Mathematisches Modell Metal oxide semiconductors Mathematical models MOS (DE-588)4130209-6 gnd rswk-swf MOS-FET (DE-588)4207266-9 gnd rswk-swf MOS-FET (DE-588)4207266-9 s DE-604 MOS (DE-588)4130209-6 s 1\p DE-604 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Tsividis, Yannis P. Operation and modeling of the MOS transistor Mathematisches Modell Metal oxide semiconductors Mathematical models MOS (DE-588)4130209-6 gnd MOS-FET (DE-588)4207266-9 gnd |
| subject_GND | (DE-588)4130209-6 (DE-588)4207266-9 |
| title | Operation and modeling of the MOS transistor |
| title_auth | Operation and modeling of the MOS transistor |
| title_exact_search | Operation and modeling of the MOS transistor |
| title_full | Operation and modeling of the MOS transistor Yannis P. Tsividis |
| title_fullStr | Operation and modeling of the MOS transistor Yannis P. Tsividis |
| title_full_unstemmed | Operation and modeling of the MOS transistor Yannis P. Tsividis |
| title_short | Operation and modeling of the MOS transistor |
| title_sort | operation and modeling of the mos transistor |
| topic | Mathematisches Modell Metal oxide semiconductors Mathematical models MOS (DE-588)4130209-6 gnd MOS-FET (DE-588)4207266-9 gnd |
| topic_facet | Mathematisches Modell Metal oxide semiconductors Mathematical models MOS MOS-FET |
| work_keys_str_mv | AT tsividisyannisp operationandmodelingofthemostransistor |