Operation and modeling of the MOS transistor:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
New York u.a.
McGraw-Hill
1988
|
| Ausgabe: | 1. print. |
| Schriftenreihe: | McGraw-Hill international editions : Electrical engineering series
McGraw-Hill series in electrical engineering : VLSI, electronics, and electronic circuits |
| Schlagworte: | |
| Beschreibung: | XX, 505 S. |
| ISBN: | 007065381X 0071003320 |
Internformat
MARC
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| 100 | 1 | |a Tsividis, Yannis P. |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Operation and modeling of the MOS transistor |c Yannis P. Tsividis |
| 250 | |a 1. print. | ||
| 264 | 1 | |a New York u.a. |b McGraw-Hill |c 1988 | |
| 300 | |a XX, 505 S. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 0 | |a McGraw-Hill international editions : Electrical engineering series | |
| 490 | 0 | |a McGraw-Hill series in electrical engineering : VLSI, electronics, and electronic circuits | |
| 650 | 4 | |a Mathematisches Modell | |
| 650 | 4 | |a Metal oxide semiconductors |x Mathematical models | |
| 650 | 0 | 7 | |a MOS |0 (DE-588)4130209-6 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a MOS-FET |0 (DE-588)4207266-9 |2 gnd |9 rswk-swf |
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Datensatz im Suchindex
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| author_facet | Tsividis, Yannis P. |
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| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| edition | 1. print. |
| format | Book |
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| id | DE-604.BV008306145 |
| illustrated | Not Illustrated |
| indexdate | 2024-07-09T17:18:00Z |
| institution | BVB |
| isbn | 007065381X 0071003320 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-005487016 |
| oclc_num | 393822758 |
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| physical | XX, 505 S. |
| psigel | TUB-nb |
| publishDate | 1988 |
| publishDateSearch | 1988 |
| publishDateSort | 1988 |
| publisher | McGraw-Hill |
| record_format | marc |
| series2 | McGraw-Hill international editions : Electrical engineering series McGraw-Hill series in electrical engineering : VLSI, electronics, and electronic circuits |
| spelling | Tsividis, Yannis P. Verfasser aut Operation and modeling of the MOS transistor Yannis P. Tsividis 1. print. New York u.a. McGraw-Hill 1988 XX, 505 S. txt rdacontent n rdamedia nc rdacarrier McGraw-Hill international editions : Electrical engineering series McGraw-Hill series in electrical engineering : VLSI, electronics, and electronic circuits Mathematisches Modell Metal oxide semiconductors Mathematical models MOS (DE-588)4130209-6 gnd rswk-swf MOS-FET (DE-588)4207266-9 gnd rswk-swf MOS-FET (DE-588)4207266-9 s DE-604 MOS (DE-588)4130209-6 s 1\p DE-604 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Tsividis, Yannis P. Operation and modeling of the MOS transistor Mathematisches Modell Metal oxide semiconductors Mathematical models MOS (DE-588)4130209-6 gnd MOS-FET (DE-588)4207266-9 gnd |
| subject_GND | (DE-588)4130209-6 (DE-588)4207266-9 |
| title | Operation and modeling of the MOS transistor |
| title_auth | Operation and modeling of the MOS transistor |
| title_exact_search | Operation and modeling of the MOS transistor |
| title_full | Operation and modeling of the MOS transistor Yannis P. Tsividis |
| title_fullStr | Operation and modeling of the MOS transistor Yannis P. Tsividis |
| title_full_unstemmed | Operation and modeling of the MOS transistor Yannis P. Tsividis |
| title_short | Operation and modeling of the MOS transistor |
| title_sort | operation and modeling of the mos transistor |
| topic | Mathematisches Modell Metal oxide semiconductors Mathematical models MOS (DE-588)4130209-6 gnd MOS-FET (DE-588)4207266-9 gnd |
| topic_facet | Mathematisches Modell Metal oxide semiconductors Mathematical models MOS MOS-FET |
| work_keys_str_mv | AT tsividisyannisp operationandmodelingofthemostransistor |