Gas source molecular beam epitaxy: growth and properties of phosphorus containing III - V heterostructures
Saved in:
| Main Authors: | , |
|---|---|
| Format: | Book |
| Language: | English |
| Published: |
Berlin [u.a.]
Springer
1993
|
| Series: | Springer series in materials science
26 |
| Subjects: | |
| Physical Description: | XIV, 428 S. Ill., graph. Darst. |
| ISBN: | 354056540X 038756540X |
Staff View
MARC
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| 245 | 1 | 0 | |a Gas source molecular beam epitaxy |b growth and properties of phosphorus containing III - V heterostructures |c M. B. Panish ; H. Temkin |
| 264 | 1 | |a Berlin [u.a.] |b Springer |c 1993 | |
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| id | DE-604.BV008154245 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T17:15:28Z |
| institution | BVB |
| isbn | 354056540X 038756540X |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-005381157 |
| oclc_num | 27938319 |
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| physical | XIV, 428 S. Ill., graph. Darst. |
| publishDate | 1993 |
| publishDateSearch | 1993 |
| publishDateSort | 1993 |
| publisher | Springer |
| record_format | marc |
| series | Springer series in materials science |
| series2 | Springer series in materials science |
| spelling | Panish, Morton B. Verfasser aut Gas source molecular beam epitaxy growth and properties of phosphorus containing III - V heterostructures M. B. Panish ; H. Temkin Berlin [u.a.] Springer 1993 XIV, 428 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Springer series in materials science 26 Gallium arsenide semiconductors Molecular beam epitaxy Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd rswk-swf Gas (DE-588)4019320-2 gnd rswk-swf Heterostruktur (DE-588)4123378-5 gnd rswk-swf Molekularstrahlepitaxie (DE-588)4170399-6 gnd rswk-swf Drei-Fünf-Halbleiter (DE-588)4150649-2 s Heterostruktur (DE-588)4123378-5 s Molekularstrahlepitaxie (DE-588)4170399-6 s DE-604 Gas (DE-588)4019320-2 s Temkin, Henryk 1947- Verfasser (DE-588)113479468 aut Springer series in materials science 26 (DE-604)BV000683335 26 |
| spellingShingle | Panish, Morton B. Temkin, Henryk 1947- Gas source molecular beam epitaxy growth and properties of phosphorus containing III - V heterostructures Springer series in materials science Gallium arsenide semiconductors Molecular beam epitaxy Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd Gas (DE-588)4019320-2 gnd Heterostruktur (DE-588)4123378-5 gnd Molekularstrahlepitaxie (DE-588)4170399-6 gnd |
| subject_GND | (DE-588)4150649-2 (DE-588)4019320-2 (DE-588)4123378-5 (DE-588)4170399-6 |
| title | Gas source molecular beam epitaxy growth and properties of phosphorus containing III - V heterostructures |
| title_auth | Gas source molecular beam epitaxy growth and properties of phosphorus containing III - V heterostructures |
| title_exact_search | Gas source molecular beam epitaxy growth and properties of phosphorus containing III - V heterostructures |
| title_full | Gas source molecular beam epitaxy growth and properties of phosphorus containing III - V heterostructures M. B. Panish ; H. Temkin |
| title_fullStr | Gas source molecular beam epitaxy growth and properties of phosphorus containing III - V heterostructures M. B. Panish ; H. Temkin |
| title_full_unstemmed | Gas source molecular beam epitaxy growth and properties of phosphorus containing III - V heterostructures M. B. Panish ; H. Temkin |
| title_short | Gas source molecular beam epitaxy |
| title_sort | gas source molecular beam epitaxy growth and properties of phosphorus containing iii v heterostructures |
| title_sub | growth and properties of phosphorus containing III - V heterostructures |
| topic | Gallium arsenide semiconductors Molecular beam epitaxy Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd Gas (DE-588)4019320-2 gnd Heterostruktur (DE-588)4123378-5 gnd Molekularstrahlepitaxie (DE-588)4170399-6 gnd |
| topic_facet | Gallium arsenide semiconductors Molecular beam epitaxy Drei-Fünf-Halbleiter Gas Heterostruktur Molekularstrahlepitaxie |
| volume_link | (DE-604)BV000683335 |
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