Verfügbarkeit: Gas source molecular beam epitaxy

Gas source molecular beam epitaxy: growth and properties of phosphorus containing III - V heterostructures

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Bibliographische Detailangaben
Hauptverfasser:	Panish, Morton B. (VerfasserIn), Temkin, Henryk 1947- (VerfasserIn)
Format:	Buch
Sprache:	English
Veröffentlicht:	Berlin [u.a.] Springer 1993
Schriftenreihe:	Springer series in materials science 26
Schlagworte:	Gallium arsenide semiconductors Molecular beam epitaxy Drei-Fünf-Halbleiter Gas Heterostruktur Molekularstrahlepitaxie
Beschreibung:	XIV, 428 S. Ill., graph. Darst.
ISBN:	354056540X 038756540X

Internformat

MARC


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245	1	0	\|a Gas source molecular beam epitaxy \|b growth and properties of phosphorus containing III - V heterostructures \|c M. B. Panish ; H. Temkin
264		1	\|a Berlin [u.a.] \|b Springer \|c 1993
300			\|a XIV, 428 S. \|b Ill., graph. Darst.
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650	0	7	\|a Heterostruktur \|0 (DE-588)4123378-5 \|2 gnd \|9 rswk-swf
650	0	7	\|a Molekularstrahlepitaxie \|0 (DE-588)4170399-6 \|2 gnd \|9 rswk-swf
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830		0	\|a Springer series in materials science \|v 26 \|w (DE-604)BV000683335 \|9 26
999			\|a oai:aleph.bib-bvb.de:BVB01-005381157

Datensatz im Suchindex

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author	Panish, Morton B. Temkin, Henryk 1947-
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dewey-tens	620 - Engineering and allied operations
discipline	Physik Elektrotechnik Elektrotechnik / Elektronik / Nachrichtentechnik
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indexdate	2024-07-09T17:15:28Z
institution	BVB
isbn	354056540X 038756540X
language	English
oai_aleph_id	oai:aleph.bib-bvb.de:BVB01-005381157
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physical	XIV, 428 S. Ill., graph. Darst.
publishDate	1993
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publisher	Springer
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series	Springer series in materials science
series2	Springer series in materials science
spelling	Panish, Morton B. Verfasser aut Gas source molecular beam epitaxy growth and properties of phosphorus containing III - V heterostructures M. B. Panish ; H. Temkin Berlin [u.a.] Springer 1993 XIV, 428 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Springer series in materials science 26 Gallium arsenide semiconductors Molecular beam epitaxy Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd rswk-swf Gas (DE-588)4019320-2 gnd rswk-swf Heterostruktur (DE-588)4123378-5 gnd rswk-swf Molekularstrahlepitaxie (DE-588)4170399-6 gnd rswk-swf Drei-Fünf-Halbleiter (DE-588)4150649-2 s Heterostruktur (DE-588)4123378-5 s Molekularstrahlepitaxie (DE-588)4170399-6 s DE-604 Gas (DE-588)4019320-2 s Temkin, Henryk 1947- Verfasser (DE-588)113479468 aut Springer series in materials science 26 (DE-604)BV000683335 26
spellingShingle	Panish, Morton B. Temkin, Henryk 1947- Gas source molecular beam epitaxy growth and properties of phosphorus containing III - V heterostructures Springer series in materials science Gallium arsenide semiconductors Molecular beam epitaxy Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd Gas (DE-588)4019320-2 gnd Heterostruktur (DE-588)4123378-5 gnd Molekularstrahlepitaxie (DE-588)4170399-6 gnd
subject_GND	(DE-588)4150649-2 (DE-588)4019320-2 (DE-588)4123378-5 (DE-588)4170399-6
title	Gas source molecular beam epitaxy growth and properties of phosphorus containing III - V heterostructures
title_auth	Gas source molecular beam epitaxy growth and properties of phosphorus containing III - V heterostructures
title_exact_search	Gas source molecular beam epitaxy growth and properties of phosphorus containing III - V heterostructures
title_full	Gas source molecular beam epitaxy growth and properties of phosphorus containing III - V heterostructures M. B. Panish ; H. Temkin
title_fullStr	Gas source molecular beam epitaxy growth and properties of phosphorus containing III - V heterostructures M. B. Panish ; H. Temkin
title_full_unstemmed	Gas source molecular beam epitaxy growth and properties of phosphorus containing III - V heterostructures M. B. Panish ; H. Temkin
title_short	Gas source molecular beam epitaxy
title_sort	gas source molecular beam epitaxy growth and properties of phosphorus containing iii v heterostructures
title_sub	growth and properties of phosphorus containing III - V heterostructures
topic	Gallium arsenide semiconductors Molecular beam epitaxy Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd Gas (DE-588)4019320-2 gnd Heterostruktur (DE-588)4123378-5 gnd Molekularstrahlepitaxie (DE-588)4170399-6 gnd
topic_facet	Gallium arsenide semiconductors Molecular beam epitaxy Drei-Fünf-Halbleiter Gas Heterostruktur Molekularstrahlepitaxie
volume_link	(DE-604)BV000683335
work_keys_str_mv	AT panishmortonb gassourcemolecularbeamepitaxygrowthandpropertiesofphosphoruscontainingiiivheterostructures AT temkinhenryk gassourcemolecularbeamepitaxygrowthandpropertiesofphosphoruscontainingiiivheterostructures

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