Amorphous and crystalline silicon carbide III and other group IV - IV materials: proceedings of the 3rd International Conference, Howard University, Washington, D.C., April 11 - 13, 1990
Gespeichert in:
| Format: | Tagungsbericht Buch |
|---|---|
| Sprache: | English |
| Veröffentlicht: |
Berlin [u.a.]
Springer
1992
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| Schriftenreihe: | Springer proceedings in physics
56 |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | XI, 372 S. Ill., graph. Darst. |
| ISBN: | 3540536035 0387536035 |
Internformat
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| adam_text | G.L.HARRIS M.G.SPENCER C.Y.-W. YANG (EDS.) AMORPHOUS AND CRYSTALLINE
SILICON CARBIDE III AND OTHER GROUP IV - IV MATERIALS PROCEEDINGS OF THE
3RD INTERNATIONAL CONFERENCE, HOWARD UNIVERSITY, WASHINGTON, D.C., APRIL
11 - 13, 1990 WITH 265 FIGURES SPRINGER-VERLAG BERLIN HEIDELBERG NEW
YORK LONDON PARIS TOKYO HONG KONG BARCELONA BUDAPEST CONTENTS PART I
GROWTH OF SINGLE CRYSTAL SIC SIC-BASED SOLID SOLUTIONS: TECHNOLOGY AND
PROPERTIES BY V.A. DMITRIEV (WITH 12 FIGURES) 3 GROWTH AND MORPHOLOGY OF
6H-SIC PREPARED BY THE SUBLIMATION METHOD BY S. NISHINO, Y. KOJIMA, AND
J. SARAIE (WITH 5 FIGURES) 15 GROWTH OF 6H-SIC SINGLE CRYSTALS BY THE
MODIFIED SUBLIMATION METHOD BY HYEONG JOON KIM AND DONG WOOK SHIN (WITH
6 FIGURES) 23 A SYSTEM FOR GROWTH OF BULK BETA-SIC BY SUBLIMATION BY V.
SHIELDS, K. FEKADE, P. JOHNSON, M. SPENCER, M. ALUKO, AND G. HARRIS
(WITH 3 FIGURES) 29 SUBLIMATION VAPOR TRANSPORT GROWTH OF SILICON
CARBIDE BY D.L. BARRETT, R.G. SEIDENSTICKER, W. GAIDA, R.H. HOPKINS, AND
W.J. CHOYKE (WITH 7 FIGURES) . . 33 DEFECTS AND POLYTYPISM OF SIC BULK
SINGLE CRYSTALS BY YU.M. TAIROV AND V.F. TSVETKOV 41 PART II GROWTH AND
CHARACTERIZATION OF AMORPHOUS SIC GROWTH MECHANISM OF HYDROGENATED
AMORPHOUS SIC FROM A GLOW-DISCHARGE PLASMA BY A. MATSUDA (WITH 6
FIGURES) 45 AMORPHOUS SILICON-CARBON ALLOY PREPARED BY THE CONTROLLED
PLASMA MAGNETRON METHOD BY M. NISHIKUNI, M. KAMEDA, K. NINOMIYA, S.
OKAMATO, T. TAKAHAMA, Y. HISHIKAWA, S. TSUDA, M. OHNISHI, S. NAKANO, AND
Y. KUWANO (WITH 4 FIGURES) 53 VII STUDY OF SUBSTRATE DOPING AND
AMORPHOUS SIC:H/CRYSTALLINE SI INTERFACE WITH A MIS STRUCTURE BY *.
HARJONO, K.H. LUI, F.E. PAGADUAN, H. INOKAWA, M.M. RAHMAN, C.Y. YANG,
AND D. SUGIARTO (WITH 4 FIGURES) 57 EFFECTS OF OPERATING TEMPERATURES ON
OPTICAL AND ELECTRICAL PROPERTIES OF AMORPHOUS SIC DEPOSITED BY
PHOTO-CVD BY J.S. PARK, Y.S. KIM, C.H. OH, G.Y. KIM, W.Y. KIM, AND M.K.
HAN (WITH 4 FIGURES) 61 POLYCRYSTALLINE SILICON-SILICON CARBIDE THIN
FILMS PRODUCED BY PLASMA ENHANCED CVD BY Y. ONUMA, K. KAMIMURA, Y.
NAGURA, K. KOIKE, AND S. YONEKUBO (WITH 9 FIGURES) 69 MODELING OF WIDE
BANDGAP MICROCRYSTALLINE SILICON CARBIDE/CRYSTALLINE SILICON
HETEROJUNCTIONS BY M.K. HAN, J.S. PARK, Y. MASTUMOTO, H. OKAMOTO, AND Y.
HAMAKAWA (WITH 5 FIGURES) 75 HYDROGEN DEPTH PROFILE MEASUREMENT IN
A-SII^C^IH FILMS BY ELASTIC RECOIL DETECTION BY V.KH. KUDOYAROVA, G.M.
GUSINSKY, L.A. RASSADIN, AND I.V. KUDRYAVTSEV (WITH 3 FIGURES) 81
INFRARED, RAMAN AND ESR STUDIES OF A-SIC PREPARED BY THE POLYMER ROUTE
BY C.-J. CHU, S.-J. TING, AND J.D. MACKENZIE (WITH 5 FIGURES) 87
AMORPHOUS SIC/SI HETEROJUNCTIONS PREPARED BY THE POLYMER ROUTE BY C.-J.
CHU, S.-J. TING, AND J.D. MACKENZIE (WITH 5 FIGURES) 93 PART * MATERIALS
AND DEVICE PROPERTIES CRYSTAL GROWTH OF /3-SIC ON SI AND ITS APPLICATION
TO MOSFETS BY A. SUZUKI, K. FURUKAWA, Y. FUJII, M. SHIGETA, AND S.
NAKAJIMA (WITH 11 FIGURES) 101 SENSOR PROPERTIES OF N-TYPE /3-SIC BY
J.S. SHOR, D. GOLDSTEIN, AND A.D. KURTZ (WITH 4 FIGURES) ILL CHARGE
TRAPPING IN CUBIC SILICON CARBIDE MIS CAPACITORS BY J.J. KOPANSKI AND
R.E. AVILA (WITH 6 FIGURES) 119 DEVELOPMENT PROSPECTS FOR SIC BIPOLAR
TRANSISTORS AND THYRISTORS BY V.E. CHELNOKOV (WITH 5 FIGURES) 125 VIII
INVESTIGATION OF THE BLUE ELECTROLUMINESCENCE EFFICIENCY OF EPITAXIAL
SIC-6H STRUCTURES BY L.M. KOGAN AND YA.V. MOROZENKO (WITH 3 FIGURES) 131
SPECTROSCOPIC STUDIES OF DONORS IN 3C-SIC FILMS BY J.A. FREITAS, JR.,
W.E. CARLOS, AND S.G. BISHOP (WITH 4 FIGURES) . . 135 ELECTRON
IRRADIATION EFFECTS ON CVD-GROWN 3C-SIC EPILAYERS BY H. ITOH, M.
YOSHIKAWA, I. NASHIYAMA, S. MISAWA, H. OKUMURA, AND S. YOSHIDA (WITH 6
FIGURES) 143 RESIDUAL CARRIERS AND ESR CENTERS IN EPITAXIALLY GROWN
3C-SIC BY I. NASHIYAMA, H. OKUMURA, E. SAKUMA, S. MISAWA, K. ENDO, AND
S. YOSHIDA (WITH 6 FIGURES) 149 TRANSPORT MEASUREMENTS AND SHALLOW
DONORS IN CUBIC SIC BY W.J. MOORE (WITH 4 FIGURES) 155 PHOTOLUMINESCENCE
PROPERTIES OF 6H-SIC GROWN BY STEP-CONTROLLED EPITAXY BY H. MATSUNAMI,
H. NISHINO, AND T. UEDA (WITH 3 FIGURES) 161 COMPARISON OF EXPERIMENTAL
LAUE TRANSMISSION AND REFLECTION PATTERNS FOR 4H, 6H, 15R, AND 3C SIC BY
W.J. CHOYKE, M. YOGANATHAN, AND * CARTER, JR. (WITH 11 FIGURES) 165
OHMIC CONTACTS TO SILICON CARBIDE DEVICES BY M.M. ANIKIN, M.G.
RASTEGAEVA, A.L. SYRKIN, AND I.V. CHUIKO (WITH 3 FIGURES) 183 SURFACE
MICROMACHINING OF N-TYPE /3-SIC USING LASER ASSISTED
PHOTOELECTROCHEMICAL ETCHING BY J.S. SHOR, X.G. ZHANG, M.N. RUBERTO, AND
R.M. OSGOOD (WITH 6 FIGURES) 191 MICROPLASMAS AND CURRENT FLUCTUATIONS
IN SILICON CARBIDE P-N STRUCTURES BY B.S. KONDRATJEV AND I.V. POPOV
(WITH 4 FIGURES) 199 POSITRON DIAGNOSTICS OF RADIATION DEFECTS IN
SILICON CARBIDE BY A.L GIRKA, A.D. MOKRUSHIN, E.N. MOKHOV, S.V. SVIRIDA,
AND A.V. SHISHKIN (WITH 3 FIGURES) 207 THE TEMPERATURE DEPENDENCE OF
IMPACT IONIZATION IN SILICON CARBIDE, AND RELATED EFFECTS BY A.O.
KONSTANTINOV (WITH 6 FIGURES) 213 THE WANNIER-STARK EFFECT AND N-SHAPED
VOLT-AMPERE CHARACTERISTICS IN A SUPERLATTICE OF 6H-SIC BY V.L. SANKIN
AND A.V. NAUMOV (WITH 3 FIGURES) 221 IX PHYSICAL AND PRACTICAL ASPECTS
OF ELECTRON HEATING IN SUPERLATTICE CV-SIC BY V.L. SANKIN, D.P. LITVIN,
AND YU.A. VODAKOV (WITH 6 FIGURES) ... 225 INVESTIGATION OF STRUCTURAL
DEFECTS IN SIC CRYSTALS BY TRANSMISSION ELECTRON MICROSCOPY BY E.N.
MOKHOV, E.I. RADOVANOVA, AND A.A. SITNIKOVA (WITH 5 FIGURES) 231 STUDY
OF AL/THERMAL OXIDE//3-SIC MOS DIODES BY H. FUMA, M. KODAMA, H. TADANO,
S. SUGIYAMA, AND M. TAKIGAWA (WITH 7 FIGURES) 237 DISSIPATIVE STRUCTURES
IN HOT ELECTRON-HOLE PLASMA OF HEXAGONAL SILICON CARBIDE (A-SIC) BY B.S.
KERNER, D.P. LITVIN, V.L. SANKIN, AND A.D. ROENKOV (WITH 4 FIGURES) 243
CHARACTERIZATION OF THE ELECTRONIC AND ATOMIC STRUCTURE OF SURFACES AND
INTERFACES OF SIC/SI GROWN AT LOW TEMPERATURE BY M. HIRAI, M. IWAMI, M.
KUSAKA, K. FUKUMOTO, H. NAKAMURA, AND H. WATABE (WITH 3 FIGURES) 251
TWO-DIMENSIONAL MODELING OF NEW SILICON CARBIDE DEVICES BY W.R. CURTICE,
J.R. SZEDON, P.G. MCMULLIN, F.R. SUTHERLAND, A.W. MORSE, AND J.A.
COSTELLO (WITH 3 FIGURES) 257 OPTICAL PROPERTIES OF 3C-SIC UNDER HIGH
HYDROSTATIC PRESSURE BY M. KOBAYASHI, R. AKIMOTO, S. ENDO, M. YAMANAKA,
M. SHINOHARA, AND K. IKOMA (WITH 4 FIGURES) 263 MINORITY CARRIER
DIFFUSION LENGTH IN EPITAXIALLY GROWN SIC(6H) PN DIODES BY M.M. ANIKIN,
A.A. LEBEDEV, S.N. PYATKO, V.A. SOLOVIEV, AND A.M. STRELCHUK (WITH 5
FIGURES) . 269 CONTACT RESISTANCE OF HIGH-TEMPERATURE SIC METALLIZATION
BY P.G. MCMULLIN, J.A. SPITZNAGEL, J.R. SZEDON, AND J.A. COSTELLO (WITH
3 FIGURES) 275 BREAKDOWN IN SILICON CARBIDE PN JUNCTIONS BY M.M. ANIKIN,
M.E. LEVINSTEIN, A.M. STRELCHUK, AND A.L. SYRKIN (WITH 4 FIGURES) 283
SIC P-N JUNCTION PHOTOSENSITIVITY IN THE LONG-WAVELENGTH REGION BY E.YE.
VIOLIN, YU.M. TAIROV, AND I.YE. JAREMENKO 287 X PART ** TECHNIQUES FOR
THIN FILM GROWTH LOW PRESSURE GROWTH OF SILICON CARBIDE ON SILICON IN A
VERTICAL REACTOR BY K.G. IRVINE, M.G. SPENCER, AND M. ALUKO (WITH 2
FIGURES) 291 SELECTIVE GROWTH OF CUBIC SIC ON SI BY CHEMICAL VAPOR
DEPOSITION BY S. NISHINO, K. TAKAHASHI, H. ISHIDA, AND J. SARAIE (WITH 5
FIGURES) 295 SHORTWAVE SIC-LEDS PREPARED BY THE SUBLIMATION SANDWICH
METHOD BY YU.A. VODAKOV, E.N. MOKHOV, A.D. ROENKOV, V.V. SEMENOV, R.G.
VERENCHIKOVA, A.O. KONSTANTINOV, V.L. SOKOLOV, AND V.G. ODING (WITH 4
FIGURES) 301 LIQUID-PHASE EPITAXY OF SILICON CARBIDE AT TEMPERATURES OF
1100-1200C BY V.A. DMITRIEV, L.B. ELFIMOV, N.D. IL INSKAYA, AND S.V.
RENDAKOVA (WITH 3 FIGURES) 307 GROWTH AND CHARACTERIZATON OF 3C-SIC AND
6H-SIC FILMS ON 6H-SIC WAFERS BY J.A. POWELL, J.B. PETIT, L.G. MATUS,
AND S.E. LEMPNER (WITH 6 FIGURES) 313 THE EFFECTS OF IMPURITIES ON MASS
TRANSPORT AND THE GROWTH MECHANISM OF SIC EPITAXIAL LAYERS GROWN BY
SUBLIMATION BY YU.A. VODAKOV, E.N. MOKHOV, M.G. RAMM, AND A.D. ROENKOV
(WITH 3 FIGURES) 323 DOPING PECULIARITIES OF SIC EPITAXIAL LAYERS GROWN
BY THE SUBLIMATION SANDWICH METHOD BY YU.A. VODAKOV, E.N. MOKHOV, M.G.
RAMM, AND A.D. ROENKOV (WITH 4 FIGURES) 329 FORMATION OF A SILICON
HETEROSTRUCTURE BY GERMANIUM ION IMPLANTATION BY A. FUKAMI, K. SHOJI,
AND T. NAGANO (WITH 12 FIGURES) 335 LOW TEMPERATURE SELECTIVE DEPOSITION
OF DIAMOND THIN FILMS BY R. RAMESHAM, * ELLIS, AND T. ROPPEL (WITH 4
FIGURES) 345 TWO-DIMENSIONAL COMPUTATIONAL MODELING OF SILICON CARBIDE
DEPOSITION IN A VERTICAL CVD REACTOR BY M.E. ALUKO AND W. GIVENS, JR.
(WITH 6 FIGURES) 353 EPITAXIAL GROWTH OF 6H-SIC BY CHEMICAL VAPOR
DEPOSITION BY S. NISHINO, K. TAKAHASHI, Y. KOJIMA, AND J. SARAIE (WITH 5
FIGURES) 363 INDEX OF CONTRIBUTORS 371 XI
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| spelling | Amorphous and crystalline silicon carbide III and other group IV - IV materials proceedings of the 3rd International Conference, Howard University, Washington, D.C., April 11 - 13, 1990 G. L. Harris ... (Eds.) Berlin [u.a.] Springer 1992 XI, 372 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Springer proceedings in physics 56 Carbure de silicium ram Silicon carbide Congresses Siliciumcarbid (DE-588)4055009-6 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 1990 Washington DC gnd-content Siliciumcarbid (DE-588)4055009-6 s DE-604 Harris, Gary L. Sonstige oth International Conference on Amorphous and Crystalline Silicon Carbide and Other Group IV-IV Materials 3 1990 Washington, DC Sonstige (DE-588)5070338-9 oth Springer proceedings in physics 56 (DE-604)BV000018744 56 GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=005065713&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Amorphous and crystalline silicon carbide III and other group IV - IV materials proceedings of the 3rd International Conference, Howard University, Washington, D.C., April 11 - 13, 1990 Springer proceedings in physics Carbure de silicium ram Silicon carbide Congresses Siliciumcarbid (DE-588)4055009-6 gnd |
| subject_GND | (DE-588)4055009-6 (DE-588)1071861417 |
| title | Amorphous and crystalline silicon carbide III and other group IV - IV materials proceedings of the 3rd International Conference, Howard University, Washington, D.C., April 11 - 13, 1990 |
| title_auth | Amorphous and crystalline silicon carbide III and other group IV - IV materials proceedings of the 3rd International Conference, Howard University, Washington, D.C., April 11 - 13, 1990 |
| title_exact_search | Amorphous and crystalline silicon carbide III and other group IV - IV materials proceedings of the 3rd International Conference, Howard University, Washington, D.C., April 11 - 13, 1990 |
| title_full | Amorphous and crystalline silicon carbide III and other group IV - IV materials proceedings of the 3rd International Conference, Howard University, Washington, D.C., April 11 - 13, 1990 G. L. Harris ... (Eds.) |
| title_fullStr | Amorphous and crystalline silicon carbide III and other group IV - IV materials proceedings of the 3rd International Conference, Howard University, Washington, D.C., April 11 - 13, 1990 G. L. Harris ... (Eds.) |
| title_full_unstemmed | Amorphous and crystalline silicon carbide III and other group IV - IV materials proceedings of the 3rd International Conference, Howard University, Washington, D.C., April 11 - 13, 1990 G. L. Harris ... (Eds.) |
| title_short | Amorphous and crystalline silicon carbide III and other group IV - IV materials |
| title_sort | amorphous and crystalline silicon carbide iii and other group iv iv materials proceedings of the 3rd international conference howard university washington d c april 11 13 1990 |
| title_sub | proceedings of the 3rd International Conference, Howard University, Washington, D.C., April 11 - 13, 1990 |
| topic | Carbure de silicium ram Silicon carbide Congresses Siliciumcarbid (DE-588)4055009-6 gnd |
| topic_facet | Carbure de silicium Silicon carbide Congresses Siliciumcarbid Konferenzschrift 1990 Washington DC |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=005065713&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| volume_link | (DE-604)BV000018744 |
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