Proceedings of the Symposium on Defects in Silicon:
Gespeichert in:
| Körperschaft: | |
|---|---|
| Format: | Tagungsbericht Buch |
| Sprache: | English |
| Veröffentlicht: |
Pennington, NJ
1983
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| Schriftenreihe: | Electrochemical Society: Proceedings
83,9. |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | X, 648 S. Ill., graph. Darst. |
Internformat
MARC
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| 245 | 1 | 0 | |a Proceedings of the Symposium on Defects in Silicon |c Hrsg. von W. Murray Bullis* |
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| adam_text | IMAGE 1
PROCEEDINGS OF THE SYMPOSIUM ON
DEFECTS IN SILICON
EDITED BY
W. MURRAY BULLIS FAIRCHILD ADVANCED R&D LABORATORY PALO ALTO, CALIFORNIA
L. C. KIMERLING
BELL LABORATORIES
MURRAY HILL, NEW JERSEY
UB/TIB HANNOVER 89
103 031 43X
ASSISTANT EDITORS
J. ANDREWS
A. BAGHDADI
K. E. BEAN
R. A. CRAVEN
G. DAS
H. R. HUFF
L. JASTRZEBSKI
J. MIKKELSEN
J. PATEL
C. W. PEARCE
S. PRUSSIN
A. REISMAN
G. ROZGONYL W, T. STACY
ELECTRONICS DIVISION
PROCEEDINGS VOLUME 83-9
THE ELECTROCHEMICAL SOCIETY, INC., 10 SOUTH MAIN ST., PENNINGTON, NJ
08534-2896
(7S
UNIVERSLTATSBLBLIOTHII? HANNOVER
TECHNISCHE
VINFORMATIONSB,RJLIOTHE!
IMAGE 2
Q F / YFI/ ROJ J (/?-* TABLE OF CONTENTS
PREFACE ILL
REVIEWS AND OVERVIEWS 1
SILICON DEFECTS AND THEIR EFFECT ON INTEGRATED CIRCUITS, J.H. MATLOCK 3
TRENDS IN DEFECT AND IMPURITY CONTROL FOR FINE LINE VLSI PROCESSING,
G.A. ROZGONYI 29
POINT DEFECT COMPLEXING IN SILICON, E. SIRTL 45
OXYGEN: PROPERTIES AND PHENOMENA 59
OXYGEN AGGREGATION AND DIFFUSIVITY IN SILICON, MICHAEL STAVOLA AND
LAWRENCE C. SNYDER 61
PHOTOLUMINESCENCE STUDY OF OXYGEN RELATED DONORS IN SILICON,-ROGER W.
SHAW AND ROBERT A. CRAVEN 76
EFFECTS OF HIGH TEMPERATURE ANNEALING ON THE FORMATION OF OXYGEN THERMAL
DONORS AND ON THE CONCENTRATION OF A NEW ELECTRON TRAP IN CZOCHRALSKI
SILICON, B.-Y. MAO, J, LAGOWSKI AND H.C. GATOS 86
OXYGEN SOLUBILITY IN SILICON AS A FUNCTION OF OXIDIZING TEMPERATURE,
AMBIENT, AND WAFER ORIENTATION, J.C, MLKKELSEN, JR. 95
STRUCTURE OF THERMALLY-INDUCED MICRODEFECTS IN CZ SILICON, F.A. PONCE
AND T. YAMASHLTA 105
THE SEGREGATION COEFFICIENT OF OXYGEN IN SILICON, R.J. JACCODINE AND
C.W. PEARCE 115
OXYGEN IN SILICON, W.C. O MARA 120
OXYGEN: INTRINSIC GETTERLNG 131
OXYGEN OUT-DIFFUSION MODEL FOR DENUDED ZONE FORMATION IN
CZOCHRALISKI-GROWN SILICON WITH HIGH INTERSTITIAL OXYGEN CONTENT, JOHN
ANDREWS 133
V
IMAGE 3
INTERNAL GETTERING IN BIPOLAR PROCESS: PART I EFFECT ON CIRCUIT
PERFORMANCE, B. GOLDSMITH, L. JASTRZEBSKI AND R. SOYDEN 142
INTERNAL GETTERING IN BIPOLAR PROCESS: PART II OXYGEN PRECIPITATION
KINETICS, R. SOYDEN, L. JASTRZEBSKI AND B. GOLDSMITH 153
THERMAL ANNEALING OF SILICON WAFERS FOR INTRINSIC GETTERING, F. SECCO
D ARAGONA, R.K. TSUI, H.M. LIAW AND P.L. FEJES 166
OXYGEN CONTROL AND INTRINSIC GETTERING IN CZ SILICON, R.B. SWAROOP AND
T. FISH 180
TWO- AND THREE-STEP ANNEALS AND OXYGEN PRECIPITATION IN HIGH CARBON CZ
SILICON, C.Y. KUNG, L. FORBES AND J.D. PENG 185
ACTIVATION OF THE INTRINSIC GETTERING MECHANISM BY THE GROWTH OF OXYGEN
RELATED PRECIPITATES IN CZ-GROWN SILICON WAFERS, JOHN OGAWA BORLAND 194
CARBON GETTERING IN SILICON, W.E. BAILEY, R.A. BOWLING AND K.E. BEAN 204
DARK CURRENT DEPENDENCE ON DENUDED ZONE DEPTH FOR INTRINSIC GETTERING OF
SILICON, D.N. NICHOLS 214
GENERATION LIFETIME IMPROVEMENT THROUGH INTRINSIC GETTERING IN N-TYPE
100 SI WAFERS, E.M. MURRAY, M.P. SCOTT, S. HAHN AND F.A. PONCE 220
OXYGEN PRECIPITATION, DENUDED ZONES, INTRINSIC GETTERING AND GENERATION
LIFETIMES ON (100) CZ SILICON, L. FORBES, C.Y. KUNG AND J.D. PENG 229
THE HOMOGENIZATION OF MICRO-DEFECTS IN THE BULK OF SILICON WAFERS BY A
THREE-STEP HEAT TREATMENT, JOHN OGAWA BORLAND 236
GETTERING OF P+ (100) SI SUBSTRATES FOR EPITAXIAL GROWTH, W. DYSON, L.
HELLWIG, J. MOODY AND J. ROSSI 246
THE INFLUENCE OF OXYGEN INTERNAL GETTERING ON THE QUALITY OF EPITAXIAL
LAYERS, K.H. YANG AND C.H. ORNER 256
VI
IMAGE 4
OXYGEN: INFRARED CHARACTERIZATION 263
CONVERSION COEFFICIENT FOR IR MEASUREMENT OF OXYGEN IN SI, T. IIZUKA, S.
TAKASU, M. TAJIMA, T. ARAL, T. NOZAKI, N. INOUE AND M. WATANABE 265
REPRODUCIBILITY OF OXYGEN AND CARBON DETERMINATIONS IN SILICON FROM IR
ABSORBANCE MEASUREMENTS, W. MURRAY BULLIS AND W.C. O MARA 275
PRECISE AND RAPID MEASUREMENT OF OXYGEN AND CARBON CONCENTRATIONS IN
SILICON, K. KRISHNAN 285
MULTIPLE-REFLECTION CORRECTIONS IN FOURIER TRANSFORM SPECTROSCOPY, ASIAN
BAGHDAD! 293
EFFECT OF STRIATIONS ON THE COMPOSITIONAL ANALYSIS OF SILICON CRYSTALS,
RICHARD A. FORMAN, MICHAEL I. BELL, ASIAN BAGHDADI AND SANTOS MAYO 303
OTHER IMPURITIES AND DEFECTS: PROPERTIES AND PHENOMENA 313
KINETICS OF SILICON INTERSTITIAL DEFECTS FROM OXIDATION STACKING FAULT
OBSERVATIONS, K. TANIGUCHL AND D.A, ANTONLADIS 315
AN
EXAMINATION OF VACANCY AND SELF-INTERSTITIAL CONTRIBUTIONS TO SILICON
SELF-DIFFUSION AND SWIRL DEFECT FORMATION, T.Y. TAN, F. MOREHEAD AND U.
GBSELE 325
DIFFUSION OF IMPURITIES IN SILICON AND DEFECT REACTIONS, G.M. BISIO, S.
DE PASQUALE, E. DI ZITTI AND P.G. GRAGLIA 337
BORON DIFFUSION IN HEAVILY N-DOPED SILICON, D. TSOUKALAS AND P.
CHENEVIER 347
EFFECT OF IMPURITY DIFFUSION ON OXIDATION-INDUCED STACKING FAULTS, S.
MATSUMOTO AND T. NIIMI 356
ANNEALING OF INTERSTITIAL LOOPS IN ARSENIC IMPLANTED SILICON, N.R. WU,
P. LING, D.K. SADANA. J. WASHBURN AND M.I. CURRENT 366
VII
IMAGE 5
OTHER IMPURITIES AND DEFECTS: CONTAMINANTS AND GETTERING 373
SILICON MICRODEFECTS AND CONTAMINATION CONTROL IN MOS DEVICE PROCESSING,
JOHN R. CARRUTHERS 375
IRON CONTAMINATION IN SILICON PROCESSING, K.G. BARRACLOUGH AND P.J. WARD
388
SAUCER PIT DEFECTS IN SILICON, C.W. PEARCE AND V.C. KANNAN 396
MICRODEFECTS NEAR THE SURFACE OF OXIDIZED SILICON WAFERS, G.
KEEFE-FRAUNDORF AND R.A. CRAVEN 406
PRISMATIC PUNCHING OF DISLOCATIONS FROM NISI. PRECIPITATES IN EPITAXIAL
SILICON, P.D. AUGUSTUS 414
THE MICROSTRUCTURE OF POLYSILICON BACKSURFACE GETTERING, W.T. STACY,
M.C. ARST, K.N. RITZ, J.G. DE GROOT AND M.H. NORCOTT 423
GETTERING OF GOLD IN SILICON WAFERS USING VARIOUS BACKSIDE GETTERING
TECHNIQUES, DALE E. HILL 433
ANNEALING OF SI SURFACES AFTER EPITAXIAL GROWTH, C.H. ORNER 442
ORIGINS OF OISF S IN N-TYPE (100) SI WAFERS, DAVID CHENG 453
SOME SOURCES OF EMITTER-COLLECTOR SHORTS IN BIPOLAR TRANSISTORS, M.E.
LUNNON, D.F. ALLISON AND W.T. STACY 463
DEFECT INDUCED LEAKAGE FROM BIPOLAR TRANSISTOR ISOLATION PROCESSING,
D.C. AHLGREN, A.G. DOMENICUCCI, R. KARCHER, S.R. MADER AND M.R. POPONIAK
472
OTHER IMPURITIES AND DEFECTS: CHARACTERIZATION 483
IMPROVED ANALYSIS PROCEDURES FOR DEEP-LEVEL MEASUREMENTS BY TRANSIENT
CAPACITANCE W.E. PHILLIPS, W.R. THURBER AND J.R. LOWNEY 485
VIII
IMAGE 6
NOVEL MEASUREMENTS OF ELECTRIC FIELD ENHANCED CARRIER EMISSION OF
DEFECTS IN SILICON, Z.F. GUAN, G.P. LI, K.L. WANG AND F. CHANG 491
A COMPARISON OF DONOR AND ACCEPTOR LEVELS IN SILICON AS DETERMINED BY
INFRARED AND PHOTOLDMINESCENCE ANALYSIS, H. MOLLENKOPF AND LARRY W.
SHIVE 499
LOCAL PHONON MODE CALCULATIONS FOR POINT DEFECTS IN SI, R.J. HAUENSTEIN,
T.C. MCGILL AND R.M. FEENSTRA 503
ISOTOPE SHIFTS OF THE P,Q,R LINES IN INDIUM-DOPED SILICON, T.E.
SCHLESINGER AND T.C. MCGILL 512
THE CHARACTERIZATION OF HETEROEPITAXIAL SILICON BY SURFACE PHOTOVOLTAGE
TECHNIQUE: IMPROVED PROPERTIES IN SOS FILMS RESULTING FROM IMPLANT
DAMAGE AND SOLID-STATE REGROWTH, J. LAGOWSKI L. JASTRZEBSKI, M.T. DUFFY,
C. MAGEE AND
G.W. CULLEN 519
CRYSTAL GROWTH AND EPITAXY 525
BULK PROPERTIES IMPROVEMENT OF CZ SILICON FROM LARGE MELTS BY THERMAL
CONVECTIVE FLOW CONTROL, GEORGE FIEGL 527
SUBMICRON EPITAXIAL FILMS, V.J. SILVESTRI, B. GINSBERG AND G.R.
SRINLVASAN 539
DEFECT CONTROL FOR SILICON EPITAXIAL PROCESSES USING SILANE,
DICHLOROSILANE, AND SILICON TETRACHLORIDE, HSUEH-RONG CHANG 549
DEFECT REDUCTION BY DICHLOROSILANE EPITAXIAL GROWTH, S.B. KULKARNI 558
ION IMPLANTATION 569
DEFECT FORMATION FOR ION IMPLANTATION, S. PRUSSIN, DAVID I. MARGOLESE
AND RICHARD N. TAUBER 571
UNDERSTANDING AND CONTROL OF RESIDUAL ,
DEFECTS GENERATED BY IMPLANTED HIGH DOSE AS BIPOLAR SUBCOLLECTORS, D.
HAGMANN 578
IX
IMAGE 7
ELECTRICAL CHARACTERISTICS OF SILICON IMPLANTED WITH 11 MEV ARSENIC,
P.F. BYRNE, N.W. CHEUNG, D.K. SADANA AND D.L. POLLA 589
LOCALIZED LIFETIME CONTROL BY ARGON IMPLANTATION INTO SILICON, A.
MOGRO-CAMPERO AND R.P. LOVE 595
OXIDATION STACKING FAULTS IN SILICON INDUCED BY BF +
IMPLANTATION USED FOR SELF ALIGNED FIELD DOPING, S. ALBIN AND R. LAMBERT
604
OXIDE DEFECTS 615
THE EFFECTS OF PRESSURE, TEMPERATURE AND TIME ON THE ANNEALING OF
IONIZING RADIATION INDUCED INSULATOR DAMAGE IN N-CHANNEL IGFETS, A.
REISMAN AND C.J. MERZ 617
THICKNESS DEPENDENCE OF DIELECTRIC BREAKDOWN FAILURE OF THERMAL SIO
FILMS, K. YAMABE, K. TANIGUCHI AND Y. MATSUSHITA 629
AUTHOR INDEX 639
SUBJECT INDEX 641
X
|
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| discipline | Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
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| id | DE-604.BV007633839 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T17:06:13Z |
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| institution_GND | (DE-588)1099310-1 |
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| physical | X, 648 S. Ill., graph. Darst. |
| publishDate | 1983 |
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| series | Electrochemical Society: Proceedings |
| series2 | Electrochemical Society: Proceedings |
| spelling | Symposium on Defects in Silicon 1983 San Francisco, Calif. Verfasser (DE-588)1099310-1 aut Proceedings of the Symposium on Defects in Silicon Hrsg. von W. Murray Bullis* Pennington, NJ 1983 X, 648 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Electrochemical Society: Proceedings 83,9. Semiconductors Defects Congresses Silicon Defects Congresses Gitterbaufehler (DE-588)4125030-8 gnd rswk-swf Silicium (DE-588)4077445-4 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 1983 San Francisco Calif. gnd-content Gitterbaufehler (DE-588)4125030-8 s Silicium (DE-588)4077445-4 s DE-604 Bullis, W. M. Sonstige oth Electrochemical Society: Proceedings 83,9. (DE-604)BV001900941 83,9 GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=004998252&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Proceedings of the Symposium on Defects in Silicon Electrochemical Society: Proceedings Semiconductors Defects Congresses Silicon Defects Congresses Gitterbaufehler (DE-588)4125030-8 gnd Silicium (DE-588)4077445-4 gnd |
| subject_GND | (DE-588)4125030-8 (DE-588)4077445-4 (DE-588)1071861417 |
| title | Proceedings of the Symposium on Defects in Silicon |
| title_auth | Proceedings of the Symposium on Defects in Silicon |
| title_exact_search | Proceedings of the Symposium on Defects in Silicon |
| title_full | Proceedings of the Symposium on Defects in Silicon Hrsg. von W. Murray Bullis* |
| title_fullStr | Proceedings of the Symposium on Defects in Silicon Hrsg. von W. Murray Bullis* |
| title_full_unstemmed | Proceedings of the Symposium on Defects in Silicon Hrsg. von W. Murray Bullis* |
| title_short | Proceedings of the Symposium on Defects in Silicon |
| title_sort | proceedings of the symposium on defects in silicon |
| topic | Semiconductors Defects Congresses Silicon Defects Congresses Gitterbaufehler (DE-588)4125030-8 gnd Silicium (DE-588)4077445-4 gnd |
| topic_facet | Semiconductors Defects Congresses Silicon Defects Congresses Gitterbaufehler Silicium Konferenzschrift 1983 San Francisco Calif. |
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