The method of Baliga-Patankar and 3-D device simulation:
Abstract: "The carrier transport in a semiconductor device is described by the classical drift-diffusion equations, which can be discretized by the method of Baliga-Patankar [6]. However, the computation of the minority charge densities is sensitive with respect to round-off errors, if the Bali...
Saved in:
| Main Author: | |
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| Format: | Book |
| Language: | English |
| Published: |
München
1993
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| Series: | Technische Universität <München>: TUM-MATH
9307 |
| Subjects: | |
| Summary: | Abstract: "The carrier transport in a semiconductor device is described by the classical drift-diffusion equations, which can be discretized by the method of Baliga-Patankar [6]. However, the computation of the minority charge densities is sensitive with respect to round-off errors, if the Baliga-Patankar discretization scheme is used. This will be shown by a 2-D counterexample. A new, stable discretization scheme will be proposed which preserves the advantage of the Baliga-Patankar discretization scheme: No restrictions on the angles of the finite- elements in the mesh need to be imposed." |
| Physical Description: | 15 S. graph. Darst. |
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MARC
| LEADER | 00000nam a2200000 cb4500 | ||
|---|---|---|---|
| 001 | BV007518797 | ||
| 003 | DE-604 | ||
| 005 | 20040413 | ||
| 007 | t | ||
| 008 | 930517s1993 gw d||| t||| 00||| eng d | ||
| 035 | |a (OCoLC)34523875 | ||
| 035 | |a (DE-599)BVBBV007518797 | ||
| 040 | |a DE-604 |b ger |e rakwb | ||
| 041 | 0 | |a eng | |
| 044 | |a gw |c DE | ||
| 049 | |a DE-12 |a DE-91G | ||
| 088 | |a TUM M 9307 | ||
| 100 | 1 | |a Montrone, Francesco |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a The method of Baliga-Patankar and 3-D device simulation |c Francesco Montrone |
| 264 | 1 | |a München |c 1993 | |
| 300 | |a 15 S. |b graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 1 | |a Technische Universität <München>: TUM-MATH |v 9307 | |
| 520 | 3 | |a Abstract: "The carrier transport in a semiconductor device is described by the classical drift-diffusion equations, which can be discretized by the method of Baliga-Patankar [6]. However, the computation of the minority charge densities is sensitive with respect to round-off errors, if the Baliga-Patankar discretization scheme is used. This will be shown by a 2-D counterexample. A new, stable discretization scheme will be proposed which preserves the advantage of the Baliga-Patankar discretization scheme: No restrictions on the angles of the finite- elements in the mesh need to be imposed." | |
| 650 | 4 | |a Computer-aided design | |
| 650 | 4 | |a Semiconductors |x Computer simulation | |
| 650 | 4 | |a Semiconductors |x Diffusion | |
| 830 | 0 | |a Technische Universität <München>: TUM-MATH |v 9307 |w (DE-604)BV006186461 |9 9307 | |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-004893483 | ||
Record in the Search Index
| _version_ | 1804121809426055168 |
|---|---|
| any_adam_object | |
| author | Montrone, Francesco |
| author_facet | Montrone, Francesco |
| author_role | aut |
| author_sort | Montrone, Francesco |
| author_variant | f m fm |
| building | Verbundindex |
| bvnumber | BV007518797 |
| ctrlnum | (OCoLC)34523875 (DE-599)BVBBV007518797 |
| format | Book |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01638nam a2200337 cb4500</leader><controlfield tag="001">BV007518797</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20040413 </controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">930517s1993 gw d||| t||| 00||| eng d</controlfield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)34523875</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV007518797</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="044" ind1=" " ind2=" "><subfield code="a">gw</subfield><subfield code="c">DE</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-12</subfield><subfield code="a">DE-91G</subfield></datafield><datafield tag="088" ind1=" " ind2=" "><subfield code="a">TUM M 9307</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Montrone, Francesco</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">The method of Baliga-Patankar and 3-D device simulation</subfield><subfield code="c">Francesco Montrone</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">München</subfield><subfield code="c">1993</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">15 S.</subfield><subfield code="b">graph. Darst.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="1" ind2=" "><subfield code="a">Technische Universität <München>: TUM-MATH</subfield><subfield code="v">9307</subfield></datafield><datafield tag="520" ind1="3" ind2=" "><subfield code="a">Abstract: "The carrier transport in a semiconductor device is described by the classical drift-diffusion equations, which can be discretized by the method of Baliga-Patankar [6]. However, the computation of the minority charge densities is sensitive with respect to round-off errors, if the Baliga-Patankar discretization scheme is used. This will be shown by a 2-D counterexample. A new, stable discretization scheme will be proposed which preserves the advantage of the Baliga-Patankar discretization scheme: No restrictions on the angles of the finite- elements in the mesh need to be imposed."</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Computer-aided design</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Semiconductors</subfield><subfield code="x">Computer simulation</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Semiconductors</subfield><subfield code="x">Diffusion</subfield></datafield><datafield tag="830" ind1=" " ind2="0"><subfield code="a">Technische Universität <München>: TUM-MATH</subfield><subfield code="v">9307</subfield><subfield code="w">(DE-604)BV006186461</subfield><subfield code="9">9307</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-004893483</subfield></datafield></record></collection> |
| id | DE-604.BV007518797 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T17:03:53Z |
| institution | BVB |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-004893483 |
| oclc_num | 34523875 |
| open_access_boolean | |
| owner | DE-12 DE-91G DE-BY-TUM |
| owner_facet | DE-12 DE-91G DE-BY-TUM |
| physical | 15 S. graph. Darst. |
| publishDate | 1993 |
| publishDateSearch | 1993 |
| publishDateSort | 1993 |
| record_format | marc |
| series | Technische Universität <München>: TUM-MATH |
| series2 | Technische Universität <München>: TUM-MATH |
| spelling | Montrone, Francesco Verfasser aut The method of Baliga-Patankar and 3-D device simulation Francesco Montrone München 1993 15 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Technische Universität <München>: TUM-MATH 9307 Abstract: "The carrier transport in a semiconductor device is described by the classical drift-diffusion equations, which can be discretized by the method of Baliga-Patankar [6]. However, the computation of the minority charge densities is sensitive with respect to round-off errors, if the Baliga-Patankar discretization scheme is used. This will be shown by a 2-D counterexample. A new, stable discretization scheme will be proposed which preserves the advantage of the Baliga-Patankar discretization scheme: No restrictions on the angles of the finite- elements in the mesh need to be imposed." Computer-aided design Semiconductors Computer simulation Semiconductors Diffusion Technische Universität <München>: TUM-MATH 9307 (DE-604)BV006186461 9307 |
| spellingShingle | Montrone, Francesco The method of Baliga-Patankar and 3-D device simulation Technische Universität <München>: TUM-MATH Computer-aided design Semiconductors Computer simulation Semiconductors Diffusion |
| title | The method of Baliga-Patankar and 3-D device simulation |
| title_auth | The method of Baliga-Patankar and 3-D device simulation |
| title_exact_search | The method of Baliga-Patankar and 3-D device simulation |
| title_full | The method of Baliga-Patankar and 3-D device simulation Francesco Montrone |
| title_fullStr | The method of Baliga-Patankar and 3-D device simulation Francesco Montrone |
| title_full_unstemmed | The method of Baliga-Patankar and 3-D device simulation Francesco Montrone |
| title_short | The method of Baliga-Patankar and 3-D device simulation |
| title_sort | the method of baliga patankar and 3 d device simulation |
| topic | Computer-aided design Semiconductors Computer simulation Semiconductors Diffusion |
| topic_facet | Computer-aided design Semiconductors Computer simulation Semiconductors Diffusion |
| volume_link | (DE-604)BV006186461 |
| work_keys_str_mv | AT montronefrancesco themethodofbaligapatankarand3ddevicesimulation |