The method of Baliga-Patankar and 3-D device simulation:
Abstract: "The carrier transport in a semiconductor device is described by the classical drift-diffusion equations, which can be discretized by the method of Baliga-Patankar [6]. However, the computation of the minority charge densities is sensitive with respect to round-off errors, if the Bali...
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
München
1993
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| Schriftenreihe: | Technische Universität <München>: TUM-MATH
9307 |
| Schlagworte: | |
| Zusammenfassung: | Abstract: "The carrier transport in a semiconductor device is described by the classical drift-diffusion equations, which can be discretized by the method of Baliga-Patankar [6]. However, the computation of the minority charge densities is sensitive with respect to round-off errors, if the Baliga-Patankar discretization scheme is used. This will be shown by a 2-D counterexample. A new, stable discretization scheme will be proposed which preserves the advantage of the Baliga-Patankar discretization scheme: No restrictions on the angles of the finite- elements in the mesh need to be imposed." |
| Beschreibung: | 15 S. graph. Darst. |
Internformat
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| 100 | 1 | |a Montrone, Francesco |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a The method of Baliga-Patankar and 3-D device simulation |c Francesco Montrone |
| 264 | 1 | |a München |c 1993 | |
| 300 | |a 15 S. |b graph. Darst. | ||
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| 490 | 1 | |a Technische Universität <München>: TUM-MATH |v 9307 | |
| 520 | 3 | |a Abstract: "The carrier transport in a semiconductor device is described by the classical drift-diffusion equations, which can be discretized by the method of Baliga-Patankar [6]. However, the computation of the minority charge densities is sensitive with respect to round-off errors, if the Baliga-Patankar discretization scheme is used. This will be shown by a 2-D counterexample. A new, stable discretization scheme will be proposed which preserves the advantage of the Baliga-Patankar discretization scheme: No restrictions on the angles of the finite- elements in the mesh need to be imposed." | |
| 650 | 4 | |a Computer-aided design | |
| 650 | 4 | |a Semiconductors |x Computer simulation | |
| 650 | 4 | |a Semiconductors |x Diffusion | |
| 830 | 0 | |a Technische Universität <München>: TUM-MATH |v 9307 |w (DE-604)BV006186461 |9 9307 | |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-004893483 | ||
Datensatz im Suchindex
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| author | Montrone, Francesco |
| author_facet | Montrone, Francesco |
| author_role | aut |
| author_sort | Montrone, Francesco |
| author_variant | f m fm |
| building | Verbundindex |
| bvnumber | BV007518797 |
| ctrlnum | (OCoLC)34523875 (DE-599)BVBBV007518797 |
| format | Book |
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| id | DE-604.BV007518797 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T17:03:53Z |
| institution | BVB |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-004893483 |
| oclc_num | 34523875 |
| open_access_boolean | |
| owner | DE-12 DE-91G DE-BY-TUM |
| owner_facet | DE-12 DE-91G DE-BY-TUM |
| physical | 15 S. graph. Darst. |
| publishDate | 1993 |
| publishDateSearch | 1993 |
| publishDateSort | 1993 |
| record_format | marc |
| series | Technische Universität <München>: TUM-MATH |
| series2 | Technische Universität <München>: TUM-MATH |
| spelling | Montrone, Francesco Verfasser aut The method of Baliga-Patankar and 3-D device simulation Francesco Montrone München 1993 15 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Technische Universität <München>: TUM-MATH 9307 Abstract: "The carrier transport in a semiconductor device is described by the classical drift-diffusion equations, which can be discretized by the method of Baliga-Patankar [6]. However, the computation of the minority charge densities is sensitive with respect to round-off errors, if the Baliga-Patankar discretization scheme is used. This will be shown by a 2-D counterexample. A new, stable discretization scheme will be proposed which preserves the advantage of the Baliga-Patankar discretization scheme: No restrictions on the angles of the finite- elements in the mesh need to be imposed." Computer-aided design Semiconductors Computer simulation Semiconductors Diffusion Technische Universität <München>: TUM-MATH 9307 (DE-604)BV006186461 9307 |
| spellingShingle | Montrone, Francesco The method of Baliga-Patankar and 3-D device simulation Technische Universität <München>: TUM-MATH Computer-aided design Semiconductors Computer simulation Semiconductors Diffusion |
| title | The method of Baliga-Patankar and 3-D device simulation |
| title_auth | The method of Baliga-Patankar and 3-D device simulation |
| title_exact_search | The method of Baliga-Patankar and 3-D device simulation |
| title_full | The method of Baliga-Patankar and 3-D device simulation Francesco Montrone |
| title_fullStr | The method of Baliga-Patankar and 3-D device simulation Francesco Montrone |
| title_full_unstemmed | The method of Baliga-Patankar and 3-D device simulation Francesco Montrone |
| title_short | The method of Baliga-Patankar and 3-D device simulation |
| title_sort | the method of baliga patankar and 3 d device simulation |
| topic | Computer-aided design Semiconductors Computer simulation Semiconductors Diffusion |
| topic_facet | Computer-aided design Semiconductors Computer simulation Semiconductors Diffusion |
| volume_link | (DE-604)BV006186461 |
| work_keys_str_mv | AT montronefrancesco themethodofbaligapatankarand3ddevicesimulation |