Physikalische Grundlagen und Realisierung eines Heterobipolartransistors und Tunnel-Emitter-Bipolar-Transistors im Materialsystem Ga(0,5)In(0,5)P GaAs:
Gespeichert in:
| 1. Verfasser: | |
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| Format: | Buch |
| Sprache: | German |
| Veröffentlicht: |
1992
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| Schlagworte: | |
| Beschreibung: | Erlangen-Nürnberg, Univ., Diss. |
| Beschreibung: | VI, 107 S. Ill., graph. Darst. |
Internformat
MARC
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| 245 | 1 | 0 | |a Physikalische Grundlagen und Realisierung eines Heterobipolartransistors und Tunnel-Emitter-Bipolar-Transistors im Materialsystem Ga(0,5)In(0,5)P GaAs |c von Thomas Lauterbach |
| 264 | 1 | |c 1992 | |
| 300 | |a VI, 107 S. |b Ill., graph. Darst. | ||
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Datensatz im Suchindex
| _version_ | 1804121752640421888 |
|---|---|
| any_adam_object | |
| author | Lauterbach, Thomas |
| author_facet | Lauterbach, Thomas |
| author_role | aut |
| author_sort | Lauterbach, Thomas |
| author_variant | t l tl |
| building | Verbundindex |
| bvnumber | BV007475320 |
| ctrlnum | (OCoLC)46177272 (DE-599)BVBBV007475320 |
| format | Book |
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| genre | (DE-588)4113937-9 Hochschulschrift gnd-content Gallium-Indium-Phosphor-System gnd |
| genre_facet | Hochschulschrift Gallium-Indium-Phosphor-System |
| id | DE-604.BV007475320 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T17:02:59Z |
| institution | BVB |
| language | German |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-004853512 |
| oclc_num | 46177272 |
| open_access_boolean | |
| owner | DE-355 DE-BY-UBR DE-703 DE-29 DE-29T |
| owner_facet | DE-355 DE-BY-UBR DE-703 DE-29 DE-29T |
| physical | VI, 107 S. Ill., graph. Darst. |
| publishDate | 1992 |
| publishDateSearch | 1992 |
| publishDateSort | 1992 |
| record_format | marc |
| spelling | Lauterbach, Thomas Verfasser aut Physikalische Grundlagen und Realisierung eines Heterobipolartransistors und Tunnel-Emitter-Bipolar-Transistors im Materialsystem Ga(0,5)In(0,5)P GaAs von Thomas Lauterbach 1992 VI, 107 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Erlangen-Nürnberg, Univ., Diss. Galliumphosphid (DE-588)4155879-0 gnd rswk-swf Bipolartransistor (DE-588)4145669-5 gnd rswk-swf Heterostruktur (DE-588)4123378-5 gnd rswk-swf Mischkristall (DE-588)4170112-4 gnd rswk-swf Heterobipolartransistor (DE-588)4254091-4 gnd rswk-swf Indiumphosphid (DE-588)4161535-9 gnd rswk-swf Indiumarsenid (DE-588)4249718-8 gnd rswk-swf Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd rswk-swf Galliumarsenid (DE-588)4019155-2 gnd rswk-swf Phosphor (DE-588)4045855-6 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Gallium-Indium-Phosphor-System gnd rswk-swf Bipolartransistor (DE-588)4145669-5 s Heterostruktur (DE-588)4123378-5 s Galliumarsenid (DE-588)4019155-2 s Indiumarsenid (DE-588)4249718-8 s Phosphor (DE-588)4045855-6 s DE-604 Heterobipolartransistor (DE-588)4254091-4 s Drei-Fünf-Halbleiter (DE-588)4150649-2 s Gallium-Indium-Phosphor-System f Galliumphosphid (DE-588)4155879-0 s Indiumphosphid (DE-588)4161535-9 s Mischkristall (DE-588)4170112-4 s 1\p DE-604 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Lauterbach, Thomas Physikalische Grundlagen und Realisierung eines Heterobipolartransistors und Tunnel-Emitter-Bipolar-Transistors im Materialsystem Ga(0,5)In(0,5)P GaAs Galliumphosphid (DE-588)4155879-0 gnd Bipolartransistor (DE-588)4145669-5 gnd Heterostruktur (DE-588)4123378-5 gnd Mischkristall (DE-588)4170112-4 gnd Heterobipolartransistor (DE-588)4254091-4 gnd Indiumphosphid (DE-588)4161535-9 gnd Indiumarsenid (DE-588)4249718-8 gnd Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd Galliumarsenid (DE-588)4019155-2 gnd Phosphor (DE-588)4045855-6 gnd |
| subject_GND | (DE-588)4155879-0 (DE-588)4145669-5 (DE-588)4123378-5 (DE-588)4170112-4 (DE-588)4254091-4 (DE-588)4161535-9 (DE-588)4249718-8 (DE-588)4150649-2 (DE-588)4019155-2 (DE-588)4045855-6 (DE-588)4113937-9 |
| title | Physikalische Grundlagen und Realisierung eines Heterobipolartransistors und Tunnel-Emitter-Bipolar-Transistors im Materialsystem Ga(0,5)In(0,5)P GaAs |
| title_auth | Physikalische Grundlagen und Realisierung eines Heterobipolartransistors und Tunnel-Emitter-Bipolar-Transistors im Materialsystem Ga(0,5)In(0,5)P GaAs |
| title_exact_search | Physikalische Grundlagen und Realisierung eines Heterobipolartransistors und Tunnel-Emitter-Bipolar-Transistors im Materialsystem Ga(0,5)In(0,5)P GaAs |
| title_full | Physikalische Grundlagen und Realisierung eines Heterobipolartransistors und Tunnel-Emitter-Bipolar-Transistors im Materialsystem Ga(0,5)In(0,5)P GaAs von Thomas Lauterbach |
| title_fullStr | Physikalische Grundlagen und Realisierung eines Heterobipolartransistors und Tunnel-Emitter-Bipolar-Transistors im Materialsystem Ga(0,5)In(0,5)P GaAs von Thomas Lauterbach |
| title_full_unstemmed | Physikalische Grundlagen und Realisierung eines Heterobipolartransistors und Tunnel-Emitter-Bipolar-Transistors im Materialsystem Ga(0,5)In(0,5)P GaAs von Thomas Lauterbach |
| title_short | Physikalische Grundlagen und Realisierung eines Heterobipolartransistors und Tunnel-Emitter-Bipolar-Transistors im Materialsystem Ga(0,5)In(0,5)P GaAs |
| title_sort | physikalische grundlagen und realisierung eines heterobipolartransistors und tunnel emitter bipolar transistors im materialsystem ga 0 5 in 0 5 p gaas |
| topic | Galliumphosphid (DE-588)4155879-0 gnd Bipolartransistor (DE-588)4145669-5 gnd Heterostruktur (DE-588)4123378-5 gnd Mischkristall (DE-588)4170112-4 gnd Heterobipolartransistor (DE-588)4254091-4 gnd Indiumphosphid (DE-588)4161535-9 gnd Indiumarsenid (DE-588)4249718-8 gnd Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd Galliumarsenid (DE-588)4019155-2 gnd Phosphor (DE-588)4045855-6 gnd |
| topic_facet | Galliumphosphid Bipolartransistor Heterostruktur Mischkristall Heterobipolartransistor Indiumphosphid Indiumarsenid Drei-Fünf-Halbleiter Galliumarsenid Phosphor Hochschulschrift Gallium-Indium-Phosphor-System |
| work_keys_str_mv | AT lauterbachthomas physikalischegrundlagenundrealisierungeinesheterobipolartransistorsundtunnelemitterbipolartransistorsimmaterialsystemga05in05pgaas |