Semiconductor memory design and application:
Gespeichert in:
Hauptverfasser: | , , |
---|---|
Format: | Buch |
Sprache: | English |
Veröffentlicht: |
New York
McGraw-Hill
1973
|
Schriftenreihe: | Texas Instruments electronics series
|
Schlagworte: | |
Beschreibung: | X, 320 S. Ill., graph. Darst. |
ISBN: | 0070389756 |
Internformat
MARC
LEADER | 00000nam a2200000 c 4500 | ||
---|---|---|---|
001 | BV007445327 | ||
003 | DE-604 | ||
005 | 19980526 | ||
007 | t| | ||
008 | 930421s1973 xx ad|| |||| 00||| eng d | ||
020 | |a 0070389756 |9 0-07-038975-6 | ||
035 | |a (OCoLC)250243886 | ||
035 | |a (DE-599)BVBBV007445327 | ||
040 | |a DE-604 |b ger |e rakddb | ||
041 | 0 | |a eng | |
049 | |a DE-91 |a DE-83 |a DE-188 | ||
050 | 0 | |a TK7895.M4 | |
082 | 0 | |a 621.3819/58/33 | |
084 | |a ZN 5640 |0 (DE-625)157473: |2 rvk | ||
100 | 1 | |a Luecke, Gerald |e Verfasser |4 aut | |
245 | 1 | 0 | |a Semiconductor memory design and application |c Gerald Luecke ; Jack P. Mize ; William N. Carr |
264 | 1 | |a New York |b McGraw-Hill |c 1973 | |
300 | |a X, 320 S. |b Ill., graph. Darst. | ||
336 | |b txt |2 rdacontent | ||
337 | |b n |2 rdamedia | ||
338 | |b nc |2 rdacarrier | ||
490 | 0 | |a Texas Instruments electronics series | |
650 | 7 | |a Memória (eletrônica digital) |2 larpcal | |
650 | 7 | |a Ordinateurs - Mémoires |2 ram | |
650 | 7 | |a Semiconducteurs |2 ram | |
650 | 7 | |a Semicondutores |2 larpcal | |
650 | 4 | |a Computer storage devices | |
650 | 4 | |a Semiconductors | |
650 | 0 | 7 | |a Halbleiterspeicher |0 (DE-588)4120419-0 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a Entwurf |0 (DE-588)4121208-3 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a Anwendung |0 (DE-588)4196864-5 |2 gnd |9 rswk-swf |
689 | 0 | 0 | |a Halbleiterspeicher |0 (DE-588)4120419-0 |D s |
689 | 0 | 1 | |a Anwendung |0 (DE-588)4196864-5 |D s |
689 | 0 | |5 DE-604 | |
689 | 1 | 0 | |a Halbleiterspeicher |0 (DE-588)4120419-0 |D s |
689 | 1 | 1 | |a Entwurf |0 (DE-588)4121208-3 |D s |
689 | 1 | |5 DE-604 | |
700 | 1 | |a Mize, Jack P. |e Verfasser |4 aut | |
700 | 1 | |a Carr, William N. |e Verfasser |4 aut | |
940 | 1 | |q TUB-nvmb | |
943 | 1 | |a oai:aleph.bib-bvb.de:BVB01-004828489 |
Datensatz im Suchindex
_version_ | 1817704504617861120 |
---|---|
adam_text | |
any_adam_object | |
author | Luecke, Gerald Mize, Jack P. Carr, William N. |
author_facet | Luecke, Gerald Mize, Jack P. Carr, William N. |
author_role | aut aut aut |
author_sort | Luecke, Gerald |
author_variant | g l gl j p m jp jpm w n c wn wnc |
building | Verbundindex |
bvnumber | BV007445327 |
callnumber-first | T - Technology |
callnumber-label | TK7895 |
callnumber-raw | TK7895.M4 |
callnumber-search | TK7895.M4 |
callnumber-sort | TK 47895 M4 |
callnumber-subject | TK - Electrical and Nuclear Engineering |
classification_rvk | ZN 5640 |
ctrlnum | (OCoLC)250243886 (DE-599)BVBBV007445327 |
dewey-full | 621.3819/58/33 |
dewey-hundreds | 600 - Technology (Applied sciences) |
dewey-ones | 621 - Applied physics |
dewey-raw | 621.3819/58/33 |
dewey-search | 621.3819/58/33 |
dewey-sort | 3621.3819 258 233 |
dewey-tens | 620 - Engineering and allied operations |
discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
format | Book |
fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>00000nam a2200000 c 4500</leader><controlfield tag="001">BV007445327</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">19980526</controlfield><controlfield tag="007">t|</controlfield><controlfield tag="008">930421s1973 xx ad|| |||| 00||| eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">0070389756</subfield><subfield code="9">0-07-038975-6</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)250243886</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV007445327</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakddb</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-91</subfield><subfield code="a">DE-83</subfield><subfield code="a">DE-188</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">TK7895.M4</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">621.3819/58/33</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">ZN 5640</subfield><subfield code="0">(DE-625)157473:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Luecke, Gerald</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Semiconductor memory design and application</subfield><subfield code="c">Gerald Luecke ; Jack P. Mize ; William N. Carr</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">New York</subfield><subfield code="b">McGraw-Hill</subfield><subfield code="c">1973</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">X, 320 S.</subfield><subfield code="b">Ill., graph. Darst.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="0" ind2=" "><subfield code="a">Texas Instruments electronics series</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Memória (eletrônica digital)</subfield><subfield code="2">larpcal</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Ordinateurs - Mémoires</subfield><subfield code="2">ram</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Semiconducteurs</subfield><subfield code="2">ram</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Semicondutores</subfield><subfield code="2">larpcal</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Computer storage devices</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Semiconductors</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleiterspeicher</subfield><subfield code="0">(DE-588)4120419-0</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Entwurf</subfield><subfield code="0">(DE-588)4121208-3</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Anwendung</subfield><subfield code="0">(DE-588)4196864-5</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Halbleiterspeicher</subfield><subfield code="0">(DE-588)4120419-0</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Anwendung</subfield><subfield code="0">(DE-588)4196864-5</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="1" ind2="0"><subfield code="a">Halbleiterspeicher</subfield><subfield code="0">(DE-588)4120419-0</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2="1"><subfield code="a">Entwurf</subfield><subfield code="0">(DE-588)4121208-3</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Mize, Jack P.</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Carr, William N.</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="940" ind1="1" ind2=" "><subfield code="q">TUB-nvmb</subfield></datafield><datafield tag="943" ind1="1" ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-004828489</subfield></datafield></record></collection> |
id | DE-604.BV007445327 |
illustrated | Illustrated |
indexdate | 2024-12-06T15:15:00Z |
institution | BVB |
isbn | 0070389756 |
language | English |
oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-004828489 |
oclc_num | 250243886 |
open_access_boolean | |
owner | DE-91 DE-BY-TUM DE-83 DE-188 |
owner_facet | DE-91 DE-BY-TUM DE-83 DE-188 |
physical | X, 320 S. Ill., graph. Darst. |
psigel | TUB-nvmb |
publishDate | 1973 |
publishDateSearch | 1973 |
publishDateSort | 1973 |
publisher | McGraw-Hill |
record_format | marc |
series2 | Texas Instruments electronics series |
spelling | Luecke, Gerald Verfasser aut Semiconductor memory design and application Gerald Luecke ; Jack P. Mize ; William N. Carr New York McGraw-Hill 1973 X, 320 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Texas Instruments electronics series Memória (eletrônica digital) larpcal Ordinateurs - Mémoires ram Semiconducteurs ram Semicondutores larpcal Computer storage devices Semiconductors Halbleiterspeicher (DE-588)4120419-0 gnd rswk-swf Entwurf (DE-588)4121208-3 gnd rswk-swf Anwendung (DE-588)4196864-5 gnd rswk-swf Halbleiterspeicher (DE-588)4120419-0 s Anwendung (DE-588)4196864-5 s DE-604 Entwurf (DE-588)4121208-3 s Mize, Jack P. Verfasser aut Carr, William N. Verfasser aut |
spellingShingle | Luecke, Gerald Mize, Jack P. Carr, William N. Semiconductor memory design and application Memória (eletrônica digital) larpcal Ordinateurs - Mémoires ram Semiconducteurs ram Semicondutores larpcal Computer storage devices Semiconductors Halbleiterspeicher (DE-588)4120419-0 gnd Entwurf (DE-588)4121208-3 gnd Anwendung (DE-588)4196864-5 gnd |
subject_GND | (DE-588)4120419-0 (DE-588)4121208-3 (DE-588)4196864-5 |
title | Semiconductor memory design and application |
title_auth | Semiconductor memory design and application |
title_exact_search | Semiconductor memory design and application |
title_full | Semiconductor memory design and application Gerald Luecke ; Jack P. Mize ; William N. Carr |
title_fullStr | Semiconductor memory design and application Gerald Luecke ; Jack P. Mize ; William N. Carr |
title_full_unstemmed | Semiconductor memory design and application Gerald Luecke ; Jack P. Mize ; William N. Carr |
title_short | Semiconductor memory design and application |
title_sort | semiconductor memory design and application |
topic | Memória (eletrônica digital) larpcal Ordinateurs - Mémoires ram Semiconducteurs ram Semicondutores larpcal Computer storage devices Semiconductors Halbleiterspeicher (DE-588)4120419-0 gnd Entwurf (DE-588)4121208-3 gnd Anwendung (DE-588)4196864-5 gnd |
topic_facet | Memória (eletrônica digital) Ordinateurs - Mémoires Semiconducteurs Semicondutores Computer storage devices Semiconductors Halbleiterspeicher Entwurf Anwendung |
work_keys_str_mv | AT lueckegerald semiconductormemorydesignandapplication AT mizejackp semiconductormemorydesignandapplication AT carrwilliamn semiconductormemorydesignandapplication |