1. Laser diodes made from dislocation-free GaAs showing a homogeneous nearfield pattern:
Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
1968
|
| Schlagworte: | |
| Beschreibung: | Bern,Univ.,Philos.-naturwiss.Fak.,Diss.. - Aus: IEEE journal of quantum electronics.Vol.QE-3,11.1967 u.Physica status solidi. Bd.28.1968. - PST: 2. Some effects of material inhomogeneities on the nearfield pattern of GaAs diode lasers. - Beigedr.: Hatz, Jörg: Calculations of intrinsic threshold for TE and TM mode in GaAs laser diodes. Mohn, Eugen: Calculations of intrinsic threshold for TE and TM mode in GaAs laser diodes |
| Beschreibung: | S.643-644,S.233-245 |
Internformat
MARC
| LEADER | 00000nam a2200000 c 4500 | ||
|---|---|---|---|
| 001 | BV006688353 | ||
| 003 | DE-604 | ||
| 005 | 00000000000000.0 | ||
| 007 | t | ||
| 008 | 930406s1968 m||| 00||| eng d | ||
| 035 | |a (OCoLC)54524045 | ||
| 035 | |a (DE-599)BVBBV006688353 | ||
| 040 | |a DE-604 |b ger |e rakddb | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-355 | ||
| 100 | 1 | |a Hatz, Jörg |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a 1. Laser diodes made from dislocation-free GaAs showing a homogeneous nearfield pattern |
| 264 | 1 | |c 1968 | |
| 300 | |a S.643-644,S.233-245 | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 500 | |a Bern,Univ.,Philos.-naturwiss.Fak.,Diss.. - Aus: IEEE journal of quantum electronics.Vol.QE-3,11.1967 u.Physica status solidi. Bd.28.1968. - PST: 2. Some effects of material inhomogeneities on the nearfield pattern of GaAs diode lasers. - Beigedr.: Hatz, Jörg: Calculations of intrinsic threshold for TE and TM mode in GaAs laser diodes. Mohn, Eugen: Calculations of intrinsic threshold for TE and TM mode in GaAs laser diodes | ||
| 655 | 7 | |0 (DE-588)4113937-9 |a Hochschulschrift |2 gnd-content | |
| 700 | 1 | 2 | |a Hatz, Jörg |4 aut |t Calculations of intrinsic threshold for TE and TM mode in GaAs laser diodes |
| 700 | 1 | 2 | |a Mohn, Eugen |4 aut |t Calculations of intrinsic threshold for TE and TM mode in GaAs laser diodes |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-004255583 | ||
Datensatz im Suchindex
| _version_ | 1804120933269504000 |
|---|---|
| any_adam_object | |
| author | Hatz, Jörg Hatz, Jörg Mohn, Eugen |
| author_facet | Hatz, Jörg Hatz, Jörg Mohn, Eugen |
| author_role | aut aut aut |
| author_sort | Hatz, Jörg |
| author_variant | j h jh j h jh e m em |
| building | Verbundindex |
| bvnumber | BV006688353 |
| ctrlnum | (OCoLC)54524045 (DE-599)BVBBV006688353 |
| format | Book |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01396nam a2200289 c 4500</leader><controlfield tag="001">BV006688353</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">00000000000000.0</controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">930406s1968 m||| 00||| eng d</controlfield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)54524045</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV006688353</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakddb</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-355</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Hatz, Jörg</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">1. Laser diodes made from dislocation-free GaAs showing a homogeneous nearfield pattern</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1968</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">S.643-644,S.233-245</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Bern,Univ.,Philos.-naturwiss.Fak.,Diss.. - Aus: IEEE journal of quantum electronics.Vol.QE-3,11.1967 u.Physica status solidi. Bd.28.1968. - PST: 2. Some effects of material inhomogeneities on the nearfield pattern of GaAs diode lasers. - Beigedr.: Hatz, Jörg: Calculations of intrinsic threshold for TE and TM mode in GaAs laser diodes. Mohn, Eugen: Calculations of intrinsic threshold for TE and TM mode in GaAs laser diodes</subfield></datafield><datafield tag="655" ind1=" " ind2="7"><subfield code="0">(DE-588)4113937-9</subfield><subfield code="a">Hochschulschrift</subfield><subfield code="2">gnd-content</subfield></datafield><datafield tag="700" ind1="1" ind2="2"><subfield code="a">Hatz, Jörg</subfield><subfield code="4">aut</subfield><subfield code="t">Calculations of intrinsic threshold for TE and TM mode in GaAs laser diodes</subfield></datafield><datafield tag="700" ind1="1" ind2="2"><subfield code="a">Mohn, Eugen</subfield><subfield code="4">aut</subfield><subfield code="t">Calculations of intrinsic threshold for TE and TM mode in GaAs laser diodes</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-004255583</subfield></datafield></record></collection> |
| genre | (DE-588)4113937-9 Hochschulschrift gnd-content |
| genre_facet | Hochschulschrift |
| id | DE-604.BV006688353 |
| illustrated | Not Illustrated |
| indexdate | 2024-07-09T16:49:57Z |
| institution | BVB |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-004255583 |
| oclc_num | 54524045 |
| open_access_boolean | |
| owner | DE-355 DE-BY-UBR |
| owner_facet | DE-355 DE-BY-UBR |
| physical | S.643-644,S.233-245 |
| publishDate | 1968 |
| publishDateSearch | 1968 |
| publishDateSort | 1968 |
| record_format | marc |
| spelling | Hatz, Jörg Verfasser aut 1. Laser diodes made from dislocation-free GaAs showing a homogeneous nearfield pattern 1968 S.643-644,S.233-245 txt rdacontent n rdamedia nc rdacarrier Bern,Univ.,Philos.-naturwiss.Fak.,Diss.. - Aus: IEEE journal of quantum electronics.Vol.QE-3,11.1967 u.Physica status solidi. Bd.28.1968. - PST: 2. Some effects of material inhomogeneities on the nearfield pattern of GaAs diode lasers. - Beigedr.: Hatz, Jörg: Calculations of intrinsic threshold for TE and TM mode in GaAs laser diodes. Mohn, Eugen: Calculations of intrinsic threshold for TE and TM mode in GaAs laser diodes (DE-588)4113937-9 Hochschulschrift gnd-content Hatz, Jörg aut Calculations of intrinsic threshold for TE and TM mode in GaAs laser diodes Mohn, Eugen aut Calculations of intrinsic threshold for TE and TM mode in GaAs laser diodes |
| spellingShingle | Hatz, Jörg Hatz, Jörg Mohn, Eugen 1. Laser diodes made from dislocation-free GaAs showing a homogeneous nearfield pattern |
| subject_GND | (DE-588)4113937-9 |
| title | 1. Laser diodes made from dislocation-free GaAs showing a homogeneous nearfield pattern |
| title_alt | Calculations of intrinsic threshold for TE and TM mode in GaAs laser diodes |
| title_auth | 1. Laser diodes made from dislocation-free GaAs showing a homogeneous nearfield pattern |
| title_exact_search | 1. Laser diodes made from dislocation-free GaAs showing a homogeneous nearfield pattern |
| title_full | 1. Laser diodes made from dislocation-free GaAs showing a homogeneous nearfield pattern |
| title_fullStr | 1. Laser diodes made from dislocation-free GaAs showing a homogeneous nearfield pattern |
| title_full_unstemmed | 1. Laser diodes made from dislocation-free GaAs showing a homogeneous nearfield pattern |
| title_short | 1. Laser diodes made from dislocation-free GaAs showing a homogeneous nearfield pattern |
| title_sort | 1 laser diodes made from dislocation free gaas showing a homogeneous nearfield pattern |
| topic_facet | Hochschulschrift |
| work_keys_str_mv | AT hatzjorg 1laserdiodesmadefromdislocationfreegaasshowingahomogeneousnearfieldpattern AT mohneugen 1laserdiodesmadefromdislocationfreegaasshowingahomogeneousnearfieldpattern |