Conference proceedings: 3rd European Symposium on Reliability of Electron Devices, Failure Physics and Analysis ; Schwäbisch Gmünd, Germany 5 - 8 October 1992
Gespeichert in:
| Körperschaft: | |
|---|---|
| Format: | Tagungsbericht Buch |
| Sprache: | English |
| Veröffentlicht: |
Berlin u.a.
VDE-Verl.
1992
|
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | Literaturangaben |
| Beschreibung: | 528 S. Ill., graph. Darst. |
| ISBN: | 3800718863 |
Internformat
MARC
| LEADER | 00000nam a2200000 c 4500 | ||
|---|---|---|---|
| 001 | BV006644097 | ||
| 003 | DE-604 | ||
| 005 | 19940105 | ||
| 007 | t | ||
| 008 | 930330s1992 gw ad|| |||| 10||| eng d | ||
| 020 | |a 3800718863 |9 3-8007-1886-3 | ||
| 035 | |a (OCoLC)29638647 | ||
| 035 | |a (DE-599)BVBBV006644097 | ||
| 040 | |a DE-604 |b ger |e rakddb | ||
| 041 | 0 | |a eng | |
| 044 | |a gw |c DE | ||
| 049 | |a DE-91 |a DE-83 |a DE-188 | ||
| 050 | 0 | |a TK7870 | |
| 082 | 0 | |a 621.381 |2 20 | |
| 084 | |a ZN 4030 |0 (DE-625)157339: |2 rvk | ||
| 084 | |a ELT 359f |2 stub | ||
| 084 | |a ELT 238f |2 stub | ||
| 111 | 2 | |a ESREF |n 3 |d 1992 |c Schwäbisch Gmünd |j Verfasser |0 (DE-588)2124491-1 |4 aut | |
| 245 | 1 | 0 | |a Conference proceedings |b 3rd European Symposium on Reliability of Electron Devices, Failure Physics and Analysis ; Schwäbisch Gmünd, Germany 5 - 8 October 1992 |c ESREF 92 ; Conference organizers ITG Informationstechnische Gesellschaft im VDE in co-operation with GME VDE/VDI-Gesellschaft Mikroelektronik ... [Chairman; W. H. Gerling] |
| 264 | 1 | |a Berlin u.a. |b VDE-Verl. |c 1992 | |
| 300 | |a 528 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 500 | |a Literaturangaben | ||
| 650 | 4 | |a Electronic apparatus and appliances |x Reliability |v Congresses | |
| 650 | 4 | |a Electronic apparatus and appliances |x Testing |v Congresses | |
| 650 | 4 | |a Integrated circuits |x Reliability |v Congresses | |
| 650 | 4 | |a Integrated circuits |x Testing |v Congresses | |
| 650 | 0 | 7 | |a Elektronisches Bauelement |0 (DE-588)4014360-0 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Fehlererkennung |0 (DE-588)4133764-5 |2 gnd |9 rswk-swf |
| 655 | 7 | |0 (DE-588)1071861417 |a Konferenzschrift |y 1992 |z Schwäbisch Gmünd |2 gnd-content | |
| 689 | 0 | 0 | |a Elektronisches Bauelement |0 (DE-588)4014360-0 |D s |
| 689 | 0 | 1 | |a Fehlererkennung |0 (DE-588)4133764-5 |D s |
| 689 | 0 | |5 DE-604 | |
| 700 | 1 | |a Gerling, Wolfgang H. |e Sonstige |4 oth | |
| 710 | 2 | |a Informationstechnische Gesellschaft |e Sonstige |0 (DE-588)2090359-5 |4 oth | |
| 856 | 4 | 2 | |m Digitalisierung TU Muenchen |q application/pdf |u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=004246974&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |3 Inhaltsverzeichnis |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-004246974 | ||
Datensatz im Suchindex
| _version_ | 1804120921440518144 |
|---|---|
| adam_text | Session 2
Reliability Correlation with Qualification, Yield
and Process Defects/Analysis Methods
Chair: W.T. Anderson
2.1
The Relationship between Failures at Qualification and in Field Service
С
Stephens -invited-
....................................................................................................... 17
2.2
Reliability, Yield and Qualitiy
-
A Link
J. Prendergast
.................................................................................................................. 27
2.3
Reliabiltiy Defect Detection, Monitoring and Screening During Processing
H. H. Huston,
С. Р.
Clarke
................................................................................................ 33
2.4
Specially Resolved Measurements of Current-Induced Temperature Changes
in Mikroelectronic Components from a Thermoreflectance Optical Test Probe
W. Claeys, S. Dilhaire, V. Qiurttard, J.
Grenier, Y.
Danto
.................................................. 37
2.5
Determination of the Charge Transfer Caused by Alpha-Particles in
Integrated Circuits
S.
Griep, Th. Künemund
................................................................................................... 43
Session
3
Power Devices
Chair:
Y
Danto
3.1
High Temperature Behavior of Power VDMOS Transistors
Z. Pavlovic, Z. Prijic,
S. Ristic,
N.
Stojadinovic
................................................................. 47
3.2
Reliability
Evaluation
of
Power SCR s
G.
Bricca,
G.
Franceschini,
M. Muschitiello, D.
Salini,
F.
Fantini
...................................... 51
3.3
Reliability
Issues
ol
High Power GaAs FETs
F.
Magistrali,
G.
Muzzin,
M.
Sangalli,
С.
Tedesco
............................................................ 55
Session
4
Reliability Assurance and
ESD
-
Problems
Chair: K. Hess
4.1
Reliability Assurance of Electronic Components for Space Applications
B. Walker, L. Hagstrom, P. Ellen -invited-
........................................................................ 61
4.2
On the Use of DC Measurements for
ESD
Related Process Monitoring
J. M. Luchies, J. Verwey, F.
Kuper
.................................................................................. 69
4.3
Analysis of
ESD
Protection Networks for DMOS Power Transistors by
Means of Static and Time-Resolved Emission Microscopy
B.
Boriati,
A. Canclini, M. Cavone, E. Novarini, P. Pavan, R. Rivoir, M.
Stucchi,
E. Zanoni
......................................................................................................................... 73
4.4
Numerial Simulation of Electrothermal Effects in
ESD
Protection Devices
S.
Hellstrom,
В.
Freydin,
E.
Veimre,
A. Udal
.................................................................. 77
Session
5
Field Reliability Results and Oxide Breakdown
Chair:
O. Hallberg
5.1
Field Components Reliability Analysis for French Telecommunications Equipment
J. Y. Boulaire, B. Bauduin, A. Lelievre -invited-
..............................................................81
5.2
Breakdown Characteristics of Gate and Tunnel Oxides Versus Field
and Temperature
Ch.
Monséríé,
P. Mortini,
G. Gérard, G. Pananakakis
.....................................................93
5.3
A New Approach of Statistical Modelling the Time Dependent Oxide Breakdown
R.-P. Vollertsen
................................................................................................................ 97
5.4
Limitations ot Oxide Breakdown Accelerated Testing lor Reliability Simulation
M. Nafria, J.
Süné,
X. Aymerich
......................................................................................101
5.5
Influence of Series Resistance in Oxide Parameter Extraction from Accelerated
Tests Data
F. Pk>, L. Ravazzi,
С
Riva...............................................................................................
105
Session
6
Electronic Device Reliability in Automotive Applications
Chair: E. Wolfgang
6.1a) The EUREKA Program for European Traffic with Highest Efficiency and
Unprecedented Safety (PROMETHEUS) and some of its Reliability Issues
B.
Höfflinger
-invited-
.......................................................................................................109
6.1b) Reliability Research in the PRO-CHIP Program of PROMETHEUS
H. Herrmann -invited-
.....................................................................................................111
6.2
Reliability Approach in Automotive Electronics
J. Robineau, M. Lazartigues, W. Binroth -invited-
..........................................................133
6.3
The Impact of Electronic Components on the Reliability of Cars
H.-G.
Kumpfmüller
...........................................................................................................141
Session
7
Monolithic Microwave Integrated Circuits and HEMT-Devices
Chair:
HL. Hartnagel
7.1
Reliability of GaAs Microwave Monolithic Integrated Circuits
A. Christou -invited-
........................................................................................................149
7.2
Emission Microscopy as a Tool for the Reliability Assessment
of AIGaAs/GaAs HEMTs
A. Gallesio, L. Marchisk), D.
Riva
....................................................................................161
7.3
Failure Mechanisms in Life Tested HEMTs
W. T. Anderson,
K. A. Christianson, C. Moglestue
..........................................................167
7.4
Analysis of Deep Levels in AIGaAs HEMTs by low Frequency
Experimental Techniques
A. Paccagnella, C.
Tedesco,
N.
Labat,
D. Ouro
Bodi,
A. Touboul,
Y.
Danto,
C. Lanzieri
. 171
7.5
Rapid Degradation Induced by Hot-Electron in AIGaAs/GaAs HEMTs
С
Tedesco,
С.
Canali,
F.
Magistrali, A. Paccagnella, E. Zanoni
.....................................175
Session 8
Electromigration
Chair:
В.
Bonati
8.1
Electromigration,
Models
and Atomistic Interpretation
R.
Kirchheim
-invited-
.....................................................................................................179
8.2
New Computational Model and Electron-Probe Technique for Studying
Electromigration Reliability of
AL
Interconnects
A.N.
Priymak
..................................................................................................................187
8.3
Electromigration in AlCu Interconnections with W-Plug Contacts
L. Ferlazzo, G.
Reimbold,
J. P. Gonchond, M. Heitzmann, O. Demolliens, G. Lormand
193
8.4
Robust Design of Circuits Susceptible to Electromigration
E. van
Geest,
Α.
Brombacher,
О.
Herrmann
...................................................................197
Session
9
Reliability Simulation and Prediction
Chair: M.M.
Barré
9.1
Simulation, a Tool for Deskjning-ln Reliability
A.
Brombacher,
E.
van
Geest,
R.
Arendsen, A. van
Steenwijk, O.
Herrmann -invited-
.. 201
9.2
Reliability Prediction by Multi-Indicator-Analysis
G.
Härtler,
A. Barkowsky, P.
Brüseke, H.
Zacharias
........................................................211
9.3
A Combined Statistical Analysis of Multi-Source Reliability Data of
Electronic Components
M. Chirulli,
E. De
Angelis, S. Occhinegro, F.
Surico
........................................................215
9.4
A Unified Theory for the Interpretation of IMPATT-Diode
Lifetest Data
G. Csanky
.........................................................................................................................221
9.5
Preventing Electromagnetic Interference from Integrated Circuits and
Printed Circuit Boards
F. Leferink, A.
Brombacher,
M.
van
Doorn, O.
Herrmann
................................................225
Session
10
Lasers
Chair: M. Finetti
10.1
Very High Temperature Test of InP-Based Laser Diodes
F.
Magistrali,
D.
Sala, M. Tesauri, F.
Fantini
....................................................................233
10.2
Electrical Characterization for Failure Analysis of DHBC InGaAsP/lnP Laser
Diodes
G. Chiorboli, M. Vanzi, M.C. Ronchini, F.
Fantini
............................................................237
10.3
Degradation Behavior of Highly Coherent
1
.55μητι
Long
-
Cavity
Multiple Quantum Well DFB Lasers
M. Fukuda,
F. Kano,
T.
Kurosaki,
J.
Yoshida
..................................................................241
Session
11
Failure Localization and Analysis Methods
Chair: M. Ciappa
11.1
Fault Localization Methodology
M.M.
Barré
-invited-
........................................................................................................245
11.2
Fautt Dictionary Navigation as an Efficient Preparation for Electron
Beam Testing
A. Hunger,
H. Retz,
O. Ritschel
.......................................................................................265
11.3
Emission Analysis of Semiconductor Devices from Backside of the Chip
E. Inuzuka, S. Oguri, Y. Hiruma
.......................................................................................269
11.4
The Backside Etching.A Tool to Reveal Trench Defects
R.
Diodati, S.Filippi..........................................................................................................
273
Session
12
Reliability Indicators,
MOS
Degradation
Chair:
N.
Stojadinovic
12.1
Reliability Indicators
A.M. Richardson, A.P. Dorey -invited-
.............................................................................277
12.2
IDDQ Current Monitoring in CMOS Circuits for Testing and Reliability
Prediction
M.Keane.........................................................................................................................285
12.3
Reliability Issues of Offset Drain Transistors after Different Modes of
Electrical Stress
C.
Papadas,
P. Mortini,
С
Monserie, G. Ghibaudo, G. Pananakakis
.............................287
12.4
Reliability Simulations of the Endurance Performance of Flotox
EEPROM
Cells using Spice
F. Gigon, C.
Papadas,
G.
Ghibaudo,
G.
Pananakakis, P. Mortini
.....................................291
12.5
Analysis of
MOS SOI
Transistors Degradation
V. Beriand, A. Touboul, O. Flament
..................................................................................295
Session
13
Packaging
Chair: J.-L. Aucouturier
13.1
Packaging Related Reliability Aspects
H.
Rechi, E. Zakel
-invited-
............................................................................................299
13.2
Plastic Encapsulated IC s Reliability Prediction Modelling: Principal Results
M. Nallino, G. Deleuze
...................................................................................................311
13.3
Surface Mounted MLCC s: Failure Analysis and Design Improvement
through Numerical Simulations
J.-
M. Dupont, F.
Michard,
В.
Moreau,
H. Ribot
...............................................................323
13.4
Thermomechanical Failure Analysis of SMD Solder Joints
A. Hijazi,
Y. Danto, Y.
Ousten,
B. Allamargot
..................................................................327
13.5
Humidity Accelerations for Testing Standards
Ö. Hallberg
.......................................................................................................................331
Posters
Group P1 Electromigration and
Stressmigration
Coordinator: J. Verwey
P1.1 Electromigration in Electrodeposited Gold Conductorlines
D.
Dienst,
К.
Haberle, W. Langheinrich, H.A. Hefner,
M. Lentmaier,
R. Isernhagen
........335
P1.2
Titanium-doped
Aluminium
Alloy Deposition
Conditions and Electromigration
С.
Gounelle, P.
Lanza,
P.
Ward,
P.
Mortini,
U.
Campisano, G. Queirolo, P.
Dezisă
........339
P1.3 Stress
Characterization of Sputtered AI-1%Si Interconnects
H.
Stutens,
G.
Knuyt,
W.
De Ceuninck, L De
Schepper,
L. Stals
...................................343
P1.4 A Microscopical
and Statistical Analysis of
Electromigration
Induced
Hillocks in
AI-4wt%Cu
Tracks
W.C.
Shih, A.L.
Gréer
.......................................................................................................347
P1.5 The Influence of Oxygen Ion Implantation on the Mechanical Strength,
Microstructure
and Electromigration Resistance of
Al
Films
S.
Bader,
E.
Arzt,
О.
Kraft, J. Sanchez, W.D.
Nix
...........................................................351
P1.6
The Resistance Decay after Electromigration as the Effect of Mechanical
Stress Relaxation
G.L.
Baldini,
A. Scorzoni,
F.
Tamarri
................................................................................355
P1.7 Electromigration Early Resistance Increase Measurements
J. Niehof,
P.A.
Flinn, T.J. Maloney
...................................................................................359
P1.8 Characterisation of Electromigration Damage by Multiple Electrical
Measurements
B.K. Jones, Y.Z. Xu, PGA. Emonts
.................................................................................363
P1.9
Thermal-
Electrical Characterisation of SWEAT-Structures
W.
Hasse,
D.
Depta,
К.
Weide ........................................................................................371
Р1.10
Electrom igration and 1/f Noise in thin
AL
Films
J.R. Kraayeveld,
A.H. Verbruggen,
S.
Radelaar
.............................................................377
P1.11 Computer Aided Tests on Electromigration under Stead/ State and
Pulsed Current Stressing
M.
Scherge,
H. Hoebbel,
V. Breternitz, Ch. Knedlik
........................................................379
Group P2 Dielectric Films
Coordinator: K. Hess
P2.1 Reliability of Ultra-Dry and NzO-Nitrided SiO2 Films: a Comparative Study
L.
Dori,
M.
Severi,
G.
Mattéi,
P. Maccagnani, P. Negrini
.................................................383
P2.2
Breakdown Measurements
on RTO
and Furnace
Ultra
Thin SiOz
Films
L.
Fonseca, F.Campabadal
.............................................................................................387
P2.3
Breakdown Characteristics of -y-lrradiated and Annealed Oxides
T.
Brožek,
В.
Pesic,
Α.
Jakubowski,
Ν.
Stojadinovic ......................................................391
Ρ2.4
Implications
of Localised Defect Model for Wafer Level Reliability
Measurements of Thin Dielectrics
P. O Sullivan, A. Mathewson
............................................................................................395
Group P3 Bonds and Packages
Coordinator: G.
Günzel
P3.1 The Influence of Current Stress on the Ageing of Ball-Bond Contacts Studied
by
SEM
and EDX
M. D Olieslaeger, L.
De Schepper,
W.
De Ceuninck,
L. Stals
..........................................399
P3.2
Thermal Stress
Screening for a New Electronic Module
M. Ong, M. Davies, E. Brennan
.......................................................................................403
Group P4 Noise as a Reliability or Degradation Indicator
Coordinator: G.
Hinkel
P4.1 Test Structures and Procedures for In-Process Monitoring and
Noise-Measurement-based Detection and Analysis of Device
Damage caused by
ESD
К.
Bock, H.L
Hartnagel
...................................................................................................407
P4.2 1/f Noise in BJTs and HBTs: Contributions from Intrinsic Transistor and
from Parasitic Resistances
T.G.M. Kleinpenning,
AJ.
Holden ...................................................................................
411
P4.3 Noise as a Criterion for Reliablity Testing of Bipolar Transistors in
Integrated Circuits
J.
Šikula,
В.
Koktavý,
M.
Šikulova, Z. Chobola,
P.
Vasina
...............................................415
P4.4
Resistance Noise Measurement, a Better Diagnostic Tool to Detect Stress
and Current-Induced Degradation
L.K.J. Vandamme, A. van Kemenade
.............................................................................419
P4.5 1/f Noise as a Predictive Parameter of Gunn Diodes Reliability
J.F.
Kołodziejski,
A.M. Zaklikiewicz
.................................................................................421
P4.6 Low Frequency Noise and Reliability Analysis of Avalanche
Photodiodes
D.A. Kozlowski, M.J. Jeffery, B.K. Jones, R.M. Hall,
P.A.
Putland, J.C.D. Stokoe
...........425
Group P5 Optoelectronic and MESFET Devices
CoordinatorG. Günzel
P5.1
Evidence of Surface Degradation Mechanism of a Particular InGaAs/lnP APD
P.
Devoldère,
J.P. Defars, B. Bauduin
.............................................................................429
P5.2 High Reliable InGaAs/lnP-Photodiodes grown by MOVPE for Fibre
Optic Applications
K. Geim, G. Herrmann, W.
Kraus....................................................................................433
P5.3 Not available at print time
P5.4 The Effect of Low Temperature Buffer Layers on the Reliability
of MBE GaAs MESFETs
N.
Kornilios, M.
Lagadas,
Z.Hatzopoulos, G. Konstantinidis,
С
Papavasiliou, A. Christou
............................................................................................439
Group P6
MOS
Degradation
Coordinator: G.
Hinkel
P6.1 Origin of the Degradation of the Threshold Voltage of a PMOS
FET
Associated to a Lateral PNP Bipolar Transistor in a I2L Test Cell
S.M. Amadou, O. Bonnaud
,
L.
Rolland
,
M. Taurin
......................................................443
P6.2 Modeling of the
MOS
Transistor Hot Carrier Degradation for Circuit
Reliability Evaluation
W.H.
Krautschneider,
Q.
Wang, H.G.
Wagemann,
W. Malzfeldt
......................................447
P6.3
Aging of Optimized
Submicron
MOSFETs under Systematic DC, AC
and Alternating Stress Conditions
N.
Revil, S. Cristoloveanu, P. Mortini
...............................................................................451
Group P7 Electrical Overstress and Protection
Coordinator: E.
Kästner
P7.1 Analysis of the Sensitivity of Thick Film Resistors to Surge Voltage
J.M.
Caverò, E. Mino
.......................................................................................................455
P7.2 Electrostatic Discharge Protections for VLSI Ciruits Using
a High Voltage Technology
N.
Maene, J.
Verkinderen,
J.
Vandenbroeck,
L.
Van den Bempt
.....................................459
P7.3 Human-Body-Model and Machine Model Testing with
Resistance and Capacitance Loads on a Commercial ESD-Tester
J. Puntigam
.....................................................................................................................463
Group P8 Measurement
/
Analysis Methods
Coordinator: H.P. Eggers
P8.1 Contactless Nondestructive Method of Semiconductor Crystal
and Device Control with
SEM
and LSM
V.V. Aristov, K.K. Frolov, A.L. Obdukhov, H.R. Raith, R.
Jede,
E.I. Rau
.........................467
P8.2 A fast VLSI SRAM Mapping Methodology using Voltage Contrast
Techniques on
SEM
F. Marc, H.
Fremont, P. Jounet, A. Touboul, Y.
Danto
.....................................................471
P8.3 FACE: An Environment for
1С
Diagnosis by
Е
-Beam Testing
D. May, J.P. Pierrel,
F. Schlegel,
L.
Bourdin, P. Harelle
...................................................475
P8.4
A Simple Method to Evaluate the Sputter Induced Damage in Schottky
Barrier Diodes by
С
-V
Measurements
D.
Bauza,
G. Pananakakis
..............................................................................................479
P8.5 A Practical Way to Measure the Thermal Resistance of Laser Diodes
R
Malberti,
С.
Salla
.........................................................................................................483
P8.6
ги-МскіеІІіпд
and Characterization of Gate-To-Drain Overlap
Contribution on the Leakage Current of a MOSFET, Used as a GCD
E. Ciantar, S. Burgniard, R. Jerisian, J. Oualid
...............................................................491
P8.7 A Methodology for Design and Test Improvement using Inductive
Failure Analysis
J.J.T.
Sousa,
F. M.
Gonçalves,
J.
P.
Teixeira
....................................................................495
P8.8
Synergy
between
Laser
Beams and Local Etching: a Cost-Effective Approach
to Circuit Debug and Repair
K. Van Doorselaer, M. Van den Reeck, A. Hente
...........................................................499
P8.9 In-sttu Electrical Measurements on Thin Film Resistor (I)
and Thick Film Dielectrics (II)
J.
Manca,
W.
De Ceuninck, L. De
Schepper,
LM. Stals, B.
Van Hecke,
E. Beyne,
J.
Roggen,
M.
F. Barker, C.R.
Pickering,
WA.
Craig
,
Y. Lassailly,
J.M.
Dujardin
...........503
8.10
Withdrawn
P8.11 Laser
Diode Based Electro-Optic Measurement System with High
Voltage Resolution
G. Baur, G. Solkner
.........................................................................................................511
P8.12 Failure Analysis on VLSI Circuits using Emission Microscopy for Backside
Observation
B. Picart, G. Deboy
.........................................................................................................515
Group P9 Bipolar Devices
Coordinator: E.
Kästner
P9.1 Estimation of Trap Multiplication in Reverse Biased Emitter Base Junctions
of NPN Transistors
J. Reichardt, J. Schloffel
..................................................................................................521
P9.2 Heterojunction Bipolar Transistor (HBT) Surface Related Failure Mechanism
A. Christou, P. Tang,
A. Georgakilas,
L. Zhu, B. Marazas
................................................525
|
| any_adam_object | 1 |
| author_corporate | ESREF Schwäbisch Gmünd |
| author_corporate_role | aut |
| author_facet | ESREF Schwäbisch Gmünd |
| author_sort | ESREF Schwäbisch Gmünd |
| building | Verbundindex |
| bvnumber | BV006644097 |
| callnumber-first | T - Technology |
| callnumber-label | TK7870 |
| callnumber-raw | TK7870 |
| callnumber-search | TK7870 |
| callnumber-sort | TK 47870 |
| callnumber-subject | TK - Electrical and Nuclear Engineering |
| classification_rvk | ZN 4030 |
| classification_tum | ELT 359f ELT 238f |
| ctrlnum | (OCoLC)29638647 (DE-599)BVBBV006644097 |
| dewey-full | 621.381 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.381 |
| dewey-search | 621.381 |
| dewey-sort | 3621.381 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Conference Proceeding Book |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>02290nam a2200493 c 4500</leader><controlfield tag="001">BV006644097</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">19940105 </controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">930330s1992 gw ad|| |||| 10||| eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">3800718863</subfield><subfield code="9">3-8007-1886-3</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)29638647</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV006644097</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakddb</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="044" ind1=" " ind2=" "><subfield code="a">gw</subfield><subfield code="c">DE</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-91</subfield><subfield code="a">DE-83</subfield><subfield code="a">DE-188</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">TK7870</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">621.381</subfield><subfield code="2">20</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">ZN 4030</subfield><subfield code="0">(DE-625)157339:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">ELT 359f</subfield><subfield code="2">stub</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">ELT 238f</subfield><subfield code="2">stub</subfield></datafield><datafield tag="111" ind1="2" ind2=" "><subfield code="a">ESREF</subfield><subfield code="n">3</subfield><subfield code="d">1992</subfield><subfield code="c">Schwäbisch Gmünd</subfield><subfield code="j">Verfasser</subfield><subfield code="0">(DE-588)2124491-1</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Conference proceedings</subfield><subfield code="b">3rd European Symposium on Reliability of Electron Devices, Failure Physics and Analysis ; Schwäbisch Gmünd, Germany 5 - 8 October 1992</subfield><subfield code="c">ESREF 92 ; Conference organizers ITG Informationstechnische Gesellschaft im VDE in co-operation with GME VDE/VDI-Gesellschaft Mikroelektronik ... [Chairman; W. H. Gerling]</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Berlin u.a.</subfield><subfield code="b">VDE-Verl.</subfield><subfield code="c">1992</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">528 S.</subfield><subfield code="b">Ill., graph. Darst.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Literaturangaben</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Electronic apparatus and appliances</subfield><subfield code="x">Reliability</subfield><subfield code="v">Congresses</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Electronic apparatus and appliances</subfield><subfield code="x">Testing</subfield><subfield code="v">Congresses</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Integrated circuits</subfield><subfield code="x">Reliability</subfield><subfield code="v">Congresses</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Integrated circuits</subfield><subfield code="x">Testing</subfield><subfield code="v">Congresses</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Elektronisches Bauelement</subfield><subfield code="0">(DE-588)4014360-0</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Fehlererkennung</subfield><subfield code="0">(DE-588)4133764-5</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="655" ind1=" " ind2="7"><subfield code="0">(DE-588)1071861417</subfield><subfield code="a">Konferenzschrift</subfield><subfield code="y">1992</subfield><subfield code="z">Schwäbisch Gmünd</subfield><subfield code="2">gnd-content</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Elektronisches Bauelement</subfield><subfield code="0">(DE-588)4014360-0</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Fehlererkennung</subfield><subfield code="0">(DE-588)4133764-5</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Gerling, Wolfgang H.</subfield><subfield code="e">Sonstige</subfield><subfield code="4">oth</subfield></datafield><datafield tag="710" ind1="2" ind2=" "><subfield code="a">Informationstechnische Gesellschaft</subfield><subfield code="e">Sonstige</subfield><subfield code="0">(DE-588)2090359-5</subfield><subfield code="4">oth</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="m">Digitalisierung TU Muenchen</subfield><subfield code="q">application/pdf</subfield><subfield code="u">http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=004246974&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA</subfield><subfield code="3">Inhaltsverzeichnis</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-004246974</subfield></datafield></record></collection> |
| genre | (DE-588)1071861417 Konferenzschrift 1992 Schwäbisch Gmünd gnd-content |
| genre_facet | Konferenzschrift 1992 Schwäbisch Gmünd |
| id | DE-604.BV006644097 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T16:49:46Z |
| institution | BVB |
| institution_GND | (DE-588)2124491-1 (DE-588)2090359-5 |
| isbn | 3800718863 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-004246974 |
| oclc_num | 29638647 |
| open_access_boolean | |
| owner | DE-91 DE-BY-TUM DE-83 DE-188 |
| owner_facet | DE-91 DE-BY-TUM DE-83 DE-188 |
| physical | 528 S. Ill., graph. Darst. |
| publishDate | 1992 |
| publishDateSearch | 1992 |
| publishDateSort | 1992 |
| publisher | VDE-Verl. |
| record_format | marc |
| spelling | ESREF 3 1992 Schwäbisch Gmünd Verfasser (DE-588)2124491-1 aut Conference proceedings 3rd European Symposium on Reliability of Electron Devices, Failure Physics and Analysis ; Schwäbisch Gmünd, Germany 5 - 8 October 1992 ESREF 92 ; Conference organizers ITG Informationstechnische Gesellschaft im VDE in co-operation with GME VDE/VDI-Gesellschaft Mikroelektronik ... [Chairman; W. H. Gerling] Berlin u.a. VDE-Verl. 1992 528 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Literaturangaben Electronic apparatus and appliances Reliability Congresses Electronic apparatus and appliances Testing Congresses Integrated circuits Reliability Congresses Integrated circuits Testing Congresses Elektronisches Bauelement (DE-588)4014360-0 gnd rswk-swf Fehlererkennung (DE-588)4133764-5 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 1992 Schwäbisch Gmünd gnd-content Elektronisches Bauelement (DE-588)4014360-0 s Fehlererkennung (DE-588)4133764-5 s DE-604 Gerling, Wolfgang H. Sonstige oth Informationstechnische Gesellschaft Sonstige (DE-588)2090359-5 oth Digitalisierung TU Muenchen application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=004246974&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Conference proceedings 3rd European Symposium on Reliability of Electron Devices, Failure Physics and Analysis ; Schwäbisch Gmünd, Germany 5 - 8 October 1992 Electronic apparatus and appliances Reliability Congresses Electronic apparatus and appliances Testing Congresses Integrated circuits Reliability Congresses Integrated circuits Testing Congresses Elektronisches Bauelement (DE-588)4014360-0 gnd Fehlererkennung (DE-588)4133764-5 gnd |
| subject_GND | (DE-588)4014360-0 (DE-588)4133764-5 (DE-588)1071861417 |
| title | Conference proceedings 3rd European Symposium on Reliability of Electron Devices, Failure Physics and Analysis ; Schwäbisch Gmünd, Germany 5 - 8 October 1992 |
| title_auth | Conference proceedings 3rd European Symposium on Reliability of Electron Devices, Failure Physics and Analysis ; Schwäbisch Gmünd, Germany 5 - 8 October 1992 |
| title_exact_search | Conference proceedings 3rd European Symposium on Reliability of Electron Devices, Failure Physics and Analysis ; Schwäbisch Gmünd, Germany 5 - 8 October 1992 |
| title_full | Conference proceedings 3rd European Symposium on Reliability of Electron Devices, Failure Physics and Analysis ; Schwäbisch Gmünd, Germany 5 - 8 October 1992 ESREF 92 ; Conference organizers ITG Informationstechnische Gesellschaft im VDE in co-operation with GME VDE/VDI-Gesellschaft Mikroelektronik ... [Chairman; W. H. Gerling] |
| title_fullStr | Conference proceedings 3rd European Symposium on Reliability of Electron Devices, Failure Physics and Analysis ; Schwäbisch Gmünd, Germany 5 - 8 October 1992 ESREF 92 ; Conference organizers ITG Informationstechnische Gesellschaft im VDE in co-operation with GME VDE/VDI-Gesellschaft Mikroelektronik ... [Chairman; W. H. Gerling] |
| title_full_unstemmed | Conference proceedings 3rd European Symposium on Reliability of Electron Devices, Failure Physics and Analysis ; Schwäbisch Gmünd, Germany 5 - 8 October 1992 ESREF 92 ; Conference organizers ITG Informationstechnische Gesellschaft im VDE in co-operation with GME VDE/VDI-Gesellschaft Mikroelektronik ... [Chairman; W. H. Gerling] |
| title_short | Conference proceedings |
| title_sort | conference proceedings 3rd european symposium on reliability of electron devices failure physics and analysis schwabisch gmund germany 5 8 october 1992 |
| title_sub | 3rd European Symposium on Reliability of Electron Devices, Failure Physics and Analysis ; Schwäbisch Gmünd, Germany 5 - 8 October 1992 |
| topic | Electronic apparatus and appliances Reliability Congresses Electronic apparatus and appliances Testing Congresses Integrated circuits Reliability Congresses Integrated circuits Testing Congresses Elektronisches Bauelement (DE-588)4014360-0 gnd Fehlererkennung (DE-588)4133764-5 gnd |
| topic_facet | Electronic apparatus and appliances Reliability Congresses Electronic apparatus and appliances Testing Congresses Integrated circuits Reliability Congresses Integrated circuits Testing Congresses Elektronisches Bauelement Fehlererkennung Konferenzschrift 1992 Schwäbisch Gmünd |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=004246974&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT esrefschwabischgmund conferenceproceedings3rdeuropeansymposiumonreliabilityofelectrondevicesfailurephysicsandanalysisschwabischgmundgermany58october1992 AT gerlingwolfgangh conferenceproceedings3rdeuropeansymposiumonreliabilityofelectrondevicesfailurephysicsandanalysisschwabischgmundgermany58october1992 AT informationstechnischegesellschaft conferenceproceedings3rdeuropeansymposiumonreliabilityofelectrondevicesfailurephysicsandanalysisschwabischgmundgermany58october1992 |