Solid state device research 91: proceedings of the 21st European Solid State Device Research Conference ESSDERC '91, 16 - 19 September 1991 Montreux, Switzerland
Gespeichert in:
| Format: | Tagungsbericht Buch |
|---|---|
| Sprache: | English |
| Veröffentlicht: |
Amsterdam u.a.
Elsevier
1991
|
| Schriftenreihe: | Microelectronic engineering
15 |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | Literaturangaben. - Einzelaufnahme eines Zs.-Bandes |
| Beschreibung: | XXIII, 697 S. Ill., zahlr. graph. Darst. |
Internformat
MARC
| LEADER | 00000nam a2200000 cb4500 | ||
|---|---|---|---|
| 001 | BV006623570 | ||
| 003 | DE-604 | ||
| 005 | 00000000000000.0 | ||
| 007 | t | ||
| 008 | 930324s1991 ad|| |||| 10||| eng d | ||
| 035 | |a (OCoLC)24320068 | ||
| 035 | |a (DE-599)BVBBV006623570 | ||
| 040 | |a DE-604 |b ger |e rakddb | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-91 | ||
| 050 | 0 | |a TK7871.85 | |
| 082 | 0 | |a 621.381/52 |2 20 | |
| 084 | |a ELT 340f |2 stub | ||
| 245 | 1 | 0 | |a Solid state device research 91 |b proceedings of the 21st European Solid State Device Research Conference ESSDERC '91, 16 - 19 September 1991 Montreux, Switzerland |c ed. by M. Ilegems ... |
| 264 | 1 | |a Amsterdam u.a. |b Elsevier |c 1991 | |
| 300 | |a XXIII, 697 S. |b Ill., zahlr. graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 0 | |a Microelectronic engineering |v 15 | |
| 500 | |a Literaturangaben. - Einzelaufnahme eines Zs.-Bandes | ||
| 650 | 4 | |a Semiconductors |v Congresses | |
| 650 | 0 | 7 | |a Festkörper |0 (DE-588)4016918-2 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Festkörperbauelement |0 (DE-588)4154179-0 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Mikroelektronik |0 (DE-588)4039207-7 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Halbleiterschaltung |0 (DE-588)4158811-3 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Halbleiterbauelement |0 (DE-588)4113826-0 |2 gnd |9 rswk-swf |
| 655 | 7 | |0 (DE-588)1071861417 |a Konferenzschrift |y 1991 |z Montreux |2 gnd-content | |
| 689 | 0 | 0 | |a Mikroelektronik |0 (DE-588)4039207-7 |D s |
| 689 | 0 | 1 | |a Halbleiterbauelement |0 (DE-588)4113826-0 |D s |
| 689 | 0 | |5 DE-604 | |
| 689 | 1 | 0 | |a Festkörperbauelement |0 (DE-588)4154179-0 |D s |
| 689 | 1 | |5 DE-604 | |
| 689 | 2 | 0 | |a Halbleiterschaltung |0 (DE-588)4158811-3 |D s |
| 689 | 2 | |8 1\p |5 DE-604 | |
| 689 | 3 | 0 | |a Festkörper |0 (DE-588)4016918-2 |D s |
| 689 | 3 | |8 2\p |5 DE-604 | |
| 700 | 1 | |a Ilegems, Marc |e Sonstige |4 oth | |
| 711 | 2 | |a ESSDERC |n 21 |d 1991 |c Montreux |j Sonstige |0 (DE-588)3012074-3 |4 oth | |
| 856 | 4 | 2 | |m Digitalisierung TU Muenchen |q application/pdf |u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=004233535&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |3 Inhaltsverzeichnis |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-004233535 | ||
| 883 | 1 | |8 1\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
| 883 | 1 | |8 2\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
Datensatz im Suchindex
| _version_ | 1804120901083463680 |
|---|---|
| adam_text | Xl
CONTENTS
Preface
vii
Committees
/
Sponsors
ix
Session I A: Silicon Heterojunction Devices
L
TREITINGER
Recent progress in silicon homo- and heterojunction bipolar technology
{Invited Paper)
3
J.N.
BURGHARTZ,
J.D. CRESSLER, K.A. JENKINS, J.Y.-C. SUN,
J.M.C.
STORK, J.H. COMFORT, T.A. BRUNNER and C.L. STANIS
Device design issues for a high-performance bipolar technology
with Si of SiGe epitaxial base
11
A. FUKAMI, K.-l. SHOJI, T. NAGANO, T. TOKUYAMA and C.Y. YANG
Graded-bandgap SiGe bipolar transistor fabricated with germanium
ion implantation
15
J. CHANG, D.K. NAYAK, V.K. RAMAN, J.C.S. WOO, J.S. PARK,
K.L WANG and C.R. VISWANATHAN
Low frequency noise in quantum-well
Gex-Si1x PMOSFET s
19
E. ZANONI, S. BIGLIARDI, P. PAVAN, P. PISONI and
С
CANALI
Measurements of avalanche effects and light emission in advanced
Si and SiGe bipolar transistors
23
A. GRUHLE,
P.A.
BADOZ, F. CHEVALIER, A. HALIMAOUI,
F. LALANNE,
M. MOUIS, J.L REGOLINI, G. VINCENT and
D.
BENSAHEL
Silicon etched-groove permeable base transistor fabrication with
cutoff frequencies {fT,fmax) above
25
Ghz
27
M. MOUIS
Numerical study of a silicon permeable base transistor with a
non-uniform doping profile
31
D. UFFMANN and
С
ADAMSKI
Integrated Si/CoSi^Si-heterotransistors at high current densities
35
A. CHANTRE,
A. GRANIER,
N.
DEGORS and A. NOUAILHAT
Impact ionization effects in silicon vertical JFET s
39
xi¡
Contents
Session I
В:
Modeling
Y.
YAMADA
«с о»,
mx /-
Nonstationary electron transport in realistic
submicron
BP-SAINT baAs
MESFETs evaluated by ensemble Monte Carlo simulation
45
Y. PAN and
M. KLEEFSTRA
Monte Carlo studies on hole mobility in heavily doped
η
-type
silicon
49
H.
KOSINA,
Ph. LINDORFER and S. SELBERHERR
Monte-Carlo
-
Poisson
coupling using transport coefficients
53
M. SCHREMS, G.
HOBLER,
M. BUDIL, H.
PÖTZL
and J.
HAGE
Calculation of internal
gettering
sites after double-step and
CMOS-type thermal anneals
Y. SHIBATA, S. HASHIMOTO, K. TANIGUCHI and
С
HAMAGUCHI
Stripe width dependence of OED in
submicron
LOCOS structures
-
New boundary condition for self-interstitials 61
G.J. HEMINK,
R.C.M. WIJBURG,
P.B.M. WOLBERT and H.
WALLINGA
Modeling of VIPMOS hot electron gate currents
65
W.
SOPPA,
W.
KANÉRT
and
К.
HEIFT
Optimization of DMOS cell structures with a self-aligned source contact
for smart power applications by realistic numerical device simulation
69
J. WENG
Physical modeling of the transit time in bipolar transistors 73
Session I C: Compound Semiconductor Devices
J.
MUN
and A. MBAYE
ESPRIT II projects on compound semiconductors {Invited Paper) 79
T. MORIYA, K. OGASAWARA and S. MAEDA
Results of the superlattice devices project in Japan {Invited Paper) 87
H. KAWAI, K. FUNATO, K.
TAIRA
and F. NAKAMURA
Two DEG-base GaSb/lnAs hot electron transistors
95
Session II A: Characterization
H.
SALEMINK
and O. ALBREKTSEN
Applications of scanning tunneling microscopy to the characterization
of semiconductor technologies and devices {Invited Paper) I01
Contents xiii
H.
BERGNER,
К.
HEMPEL,
Α.
KRAUSE
and U.
STAMM
Dynamic
laser beam testing of a n-MOS device
109
F.M. ROCHE,
S.D.
BOCUS and P.
GIRARD
Effect of well and substrate parameters on the latchup degradation
of CMOS structures during
е
-beam voltage contrast measurements
113
P. GHEZZI, F.
PIO,
С.
RIVA, A.
MATHEWSON, F. NAUGHTON and
P. O SULLIVAN
An
exponentially ramped current stress method providing a
wide range of dielectric parameters
117
A.C.G. WOOD and A.G. O NEILL
С
-V
profiling of delta layers in silicon by quantum and
classical approaches
121
B. LISS,
A. LINDGREN
and
O. ENGSTRÖM
Charging properties of
SIPOS
used as a passivation layer on silicon
125
Session I! B: Epitaxial Layers on Silicon
S.C. JAIN, P. BALK, M.S. GOORSKY and
S.S.
IYER
Strain relaxation in GeSi layers with uniform and graded composition
131
Z.A. SHAFI, A.S.R. MARTIN, J. WHITEHURST, P. ASHBURN,
D.J. GODFREY, C.J. GIBBINGS, I.R.C. POST,
CG. TUPPEN,
G.R. BOOKER and M.E. JONES
Rapid thermal annealing of metastable and stable Si/Si1.xGex
heterojunction bipolar transistors 135
V.V. AFANAS EV,
S.V.
NOVIKOV, N.S.
SOKOLOV
and N.L. YAKOVLEV
MBE-grown (Ca,Sr)F2 layers on Si
(111)
and GaAs
(111):
Electronic structure of interfaces
13Э
F. BENYAÏCH,
F. PRIOLO,
E.
RIMINI,
С.
SPINELLA,
P. WARD
and F.
BAROETTO
Epitaxial realignment of polycrystalline Si layers by rapid
thermal annealing 143
Session
II C:
Compound Semiconductor Processing
A. PARASKEVOPOULOS R. WEBER, P.
HARDE
and
H·
SCHROETER-JANßEN . .
bimulation and experimental study of Zn outdiffusion during epitaxial
growth of a double heterostructure bipolar transistor structure
149
xiv
Contents
I
POLLENTIER,
Y. ZHU,
В.
DE MEULEMEESTER, P. VAN DAELE
and P.
DEMEEŚTER
.
Low
stress Pd/Ge-based ohmic contacts for GaAs epitaxial-lift-ott
тзј
T.
CLAUSEN,
A.S. PEDERSEN and O. LEISTIKO
Contact
metallurgy optimization
for ohmic contacts
to
InP
э/
Ρ
LAUNAY.
В.
BAMUENt,
A.M.
DUCHENOIS and P. BLANCONNIER
Self-aligned AIGaAs/GaAs HBTs with tungsten
η
and
ρ
type
ohmic contacts
Session III A: Silicon on Insulator Technology
T. MORIYA, T. WATANABE,
I.
NAKANO
and
S. MAEDA
Results of the three-dimensional integrated circuits project in Japan
16
S. ONGA, S. KAMBAYASHI, M. YOSHIMI, K. NATORI and
M. KASHIWAGI
9.5
x
9.5
mm2-area recrystallization,
βμπι-νίβηοΐβ
filling and
thin
1/4μηι
CMOS SOI designing for realizing three-dimensional
integrated circuit 175
K. OHTAKE, K. KIOI, T. SHINOZAKI, S. TOYOYAMA, K. SHIRAKAWA
and S. TSUCHIMOTO
Four-story structured character recognition sensor image with
3D
integration 179
Y. AKASAKA, Y. INOUE, M. NAKAYA and T. NISHIMURA
The
3-D 1С
with 4-layer structure for the fast range sensing system 183
Y. ITOH,
A. WADA,
К.
MORIMOTO,
Y.
TOMITA
and
К.
YAMAZAKI
4-layer
3-D 1С
with a function of parallel signal processing 187
G.
ROOS,
В.
HOEFFLINGER,
M.
SCHUBERT and R. ZINGG
Manufacturability of SD-epitaxial-lateral-overgrowth CMOS circuits
with three stacked channels
191
S.
WILLIAMS and S. CRISTOLOVEANU
In situ pseudo-MOS transistor in as-grown silicon on insulator wafers 195
С
LEROUX,
J.
GAUTIER, A.J AUBERTON-HERVÉ,
В
GIFFARD
and M. SPALANZANI
Parasitic transients induced by floating substrate effect and bipolar
transistor on SOI technologies
199
L.J. McDAID, S. HALL, W. ECCLESTON and J.C. ALDERMAN
Reduction of the latch effect in SOI MOSFETs by the silicidation
of the source
203
Contents xv
G.
BADENES,
H.B.
ABEL,
H.
GASSEL,
G.
BURBACH
and H.
VOGT
Measurement of SOI film thickness
207
Session III B: Modeling
J.A. POWER, D. BARRY, A. MATHEWSON and W.A. LANE
Worst-case simulation using principal component analysis techniques:
An investigation
213
F. FASCHING,
С.
FISCHER,
S.
HALAMA,
H. PIMINGSTORFER,
H.
READ,
S. SELBERHERR, H.
STIPPEL,
W.
TUPPA,
P. VERHAS and K. WIMMER
A
new open technology
CAD
system
217
К.
SONODA,
К.
TANIGUCHI and
С.
HAMAGUCHI
Analytical device model including velocity overshoot effect for
ultra small MOSFETs
221
H.-J. WILDAU,
F. SCHEIDEMANTEL
and H.G.
WAGEMANN
Application of a linear scaling factor for modeling l-V-characteristics
of
submicron
MOSFETs with channel lengths down to
0.4
џт
225
R.M.D. VELGHE and F.M. KLAASSEN
Physics-based circuit-level model for sub-micron MOSFETs
229
A. TERAO and F. VAN
DE WIELE
An analytical model for GAA transistors
233
M. SCHUBERT, B. HOEFFLINGER, D. SCHROEDER and R.P. ZINGG
1D modeling of SOI MOSFETs using distinct quasi-Fermi potentials
237
Session III C: CMOS Technology
H. MINGAM
CMOS technologies for logic applications {Invited Paper)
243
Y.-S. CHOI, T.-P. RHEE, K.-D. YOO and T. WON
A new submicrcon MOSFET technology with gate overlap on
twin oxide (GOTO) LDD structure 253
M. LERME, G. GUEGAN,
S DELÉONIBUS, F.
MARTIN,
M. HEITZMANN, F.
VINET,
С.
JAFFARD,
M.
BELLEVILLE,
M.
GUERIN,
G.
REIMBOLD and
С.
LEROUX
A fully scaled
0.5μπι
CMOS process for fast random logic
257
xvi
ContmtS
Session III D: Compound Semiconductor Optoelectronics
D.L. ROGERS
GaAs opto-electronic integrated circuits for high speed
optical communications {Invited Paper)
M
STOLLENWERK,
D.
GRÜTZMACHER,
M.
MÖHRLE, F. FIDORRA
and K. HEIME
GalnAs/GalnAsP
SCH-MQW-laser emitting at
1.35
џт
grown
by LP-MOVPE 2bJ
A. TEMMAR, J.P. PRASEUTH, J.F. PALMIER and A. SCAVENNEC
AllnAs/GalnAs metal-semiconductor-metal
photodiodes
with very
low dark current 26
D.A. ALLAN, J. HERNIMAN, P.J. O SULLIVAN, P. BIRDSALL and
A. QUAYLE
Planar integration technologies for optoelectronic integrated circuits 271
V.
HURM,
J.
ROSENZWEIG,
M.
LUDWIG,
Α. ΑΧΜΑΝΝ,
W.
BENZ,
M. BERROTH,
R.
OSÓRIO,
A.
HÜLSMANN,
G.
KAUFEL,
К.
KÖHLER,
B.
RAYNOR and Jo. SCHNEIDER
10
Gbit/s monolithic integrated optoelectronic receiver using an
MSM
photodiode
and AIGaAs/GaAs HEMTs 275
P. CORREC, J.C. BOULEY and
С
MOREAU
Single-and multi-electrode distributed feedback lasers: Modelling
taking into account hole burning and comparison with experiment
279
Session III E: Photon Detectors
K.M.
STROHM, J.F. LUY, J.
BÜCHLER, F. SCHÄFFLER
and A. SCHAUB
Planar
100
GHz silicon detector circuits 285
U. HILLERINGMANN, K.
KNOSPE,
С.
HEITE,
К.
SCHUMACHER
and K. GOSER
A silicon based technology for monolithic integration of wavequides
and VLSI CMOS circuits
289
T. HOSHINO, H. ZOGG,
С
MAISSEN, J.
MASEK
and S. BLUNIER
Fabrication procedures of photovoltaic lead-chalcogenide-on-silicon
infrared sensor arrays for thermal imaging
293
T. OTAREDIAN and S.E.
WOUTERS
Optimization of the energy resolution of the diffusion based nuclear
radiation sensors
297
Contents xvii
Session IV A: Compound Semiconductor Devices
R.N. NOTTENBURG
Heterostructure bipolar transistors based on InP and application to
integrated circuits for lightwave communication (Invited Paper)
303
G. SCHWEEGER, F.G.
DELLA CORTE
and H.L
HARTNAGEL
Design and characteristics of a GaAs BMFET
313
B.
WILLEN
and U. WESTERGREN
The temperature dependent current gain of heterojunction
bipolar transistors
317
Session IV B: Compound Semiconductor Circuits
M.
ROCCHI
GaAs
&
Si MMIC building blocks: A moot point revisited (Invited Paper)
685*
U.
NOWOTNY,
M.
LANG,
M. BERROTH,
V.
HURM,
A.
HÜLSMANN,
G. KAUFEL, K.
KÖHLER,
B. RAYNOR
and Jo. SCHNEIDER
20
Gbit/s
2:1
multiplexer using
0.3
μπι
gate length double pulse
doped quantum well GaAs/AIGaAs transistors
323
M. BERROTH, V.
HURM, U.
NOWOTNY,
Α.
HÜLSMANN,
G. KAUFEL,
К.
KÖHLER,
В.
RAYNOR
and Jo. SCHNEIDER
A
2.5
ns
вхб-Ь
parallel multiplier using
0.5
џт
GaAs/GaAIAs
heterostructure field effect transistors
327
Session IV C: Silicon on Insulator Devices
S.D.
BROTHERTON
Poly-crystalline silicon thin film devices for large area electronics
(Invited Paper) 333
U.
MAGNUSSON, B. EDHOLM
and
F. MASSZI
A lateral bipolar transistor concept on SOI using a self-aligned base
definition technique 341
O. LE NÉEL
and
M. HAOND
Subthreshold currents in
submicron
N
and PMOS and static
consumption of SRAMs circuits made in thin film SOI 345
T. OUÏSSE, G. GHIBAUDO,
J.
BRINI,
S. CRISTOLOVEANU
and G. BOREL
Hysteresis and critical phenomena in silicon on insulator MOSFETs
349
R. HOWES and W. REDMAN-WHITE
frequency dependent small-signal drain characteristics in silicon-
on-sapphire MOSFETs 353
xviii Contents
Session
IV
D:
Dynamic Memories
F
HOFMANN,
W.
HÄNSCH,
H.
GEIB,
W.
RÖSNER, D.
TAKÁCS
and L.
RISCH
High capacitance isolated surrounding stacked trench cell tor ^
advanced
DRAMs
D.
TEMMLER
Shrink potential, stability and yieldability of a multilayer vertical
stacked capacitor for
64/256
MDRAM
öbó
W.H.
KRAUTSCHNEIDER,
L. RISCH, K.
LAU
and
D. SCHMITT-LANDSIEDEL
Fully scalable gain memory cell for future
DRAMs Jb/
H.-M.
MÜHLHOFF,
J. DIETL,
L KUSZTELAN
DRAM cell characterization by AC-impedance measurement
òn
Session IV E: Power Devices
A.F.J. MURRAY, W.A. LANE,
CG.
CAHILL, J.D. BARRETT
Parasitic breakdown control in HVIC process integration
377
S. HIDALGO, J.
FERNÁNDEZ,
F.
BERTA,
P. GODIGNON,
J.
REBOLLO
AND
J. MILLÁN
Design
and fabrication of improved resurfed LDMOS devices 38
Session V A: Silicon
Microsensors and
Microactuators
H. GUCKEL
Silicon
microsensors:
Construction,
design
and performance
{Invited Paper)
F. RUDOLF and J. BERGQVIST
Silicon micromachining
for sensor applications (Invited Paper)
R.A.
BUSER,
J. BRUGGER and N.F.
DE
ROOIJ
Micromachined silicon cantilevers and tips for scanning
probe microscopy
С
LINDER,
M. GRÉTILLAT and
N.F. DE ROOIJ
Realization of different polysilicon resonators with integrated
excitation and detection elements
Q. DONG, W.
BENECKE
and H. SCHLIWINSKI
SiON-Au double layer
microactuator
fabrication
Contents xix
H. BALTES,
D.
MOSER,
R.
LENGGENHAGER
and O.
BRAND
Thermal microtransducers by CMOS technology combined with
micromachining
419
A. MERLOS,
С.
CANE,
J.
BAUSELLS and J.
ESTEVE
Moderation and fabrication of ISFET based sensors
423
Session V B: Hot Carrier Effects in MOSFETs
M. STEIMLE and H.-M.
MÜHLHOFF
Limitations of digital CMOS-processes for analog applications due
to channel length modulation and hot carrier degradation
429
M. ORLOWSKI,
C. MAZURÉ
and
M. NOELL
A new vertically layered elevated hot carrier resistant source/drain
structure for deep submicron MOSFETs
433
E. DE SCHRIJVER,
P.
HEREMANS, R. BELLENS,
G. GROESENEKEN
and H.E. MAES
Analysis of post-stress effects in passivated MOSFETs after
hot-carrier stress
437
Q. WANG, W.H.
KRAUTSCHNEIDER,
M.
BROX and W. WEBER
Time dependence of hot-carrier degradation in LDD nMOSFETs
441
A. ASENOV, J.
BERGER,
W.
WEBER,
M.
BOLLU and
F. KOCH
Hot-carrier degradation monitoring in LDD n-MOSFETs using drain
gated-diode measurements 445
E.A.
GUTIÉRREZ
D., L.
DEFERM and
G. DECLERCK
Transconductance degradation and its correlation to the second
substrate current hump of submicron NMOS LDD transistors
449
С
BERGONZONI and G.
DALLA LIBERA
A physical characterization of dynamically stressed CMOS transistors
453
E. SIMOEN, B. DIERICKX, M.-H.
GAO
and
С
CLAEYS
Influence of hot-carrier stress on the kink/hysteresis behavior of
NMOST s operating at liquid helium temperatures
457
AT. DEJENFELT and
O. ENGSTRÖM
MOSFET mobility degradation due to interface-states, generated
by Fowler-Nordheim electron injection 461
Contents
Session V
С:
Silicon Processing
Rapid thermal processing and thin film technologies (Invited Paper)
467
В
PIOT,
К.
BARLA,
В.
GARCIN and
A. STRADONI
Boron diffusion effects from p+ polysilicon gate in thin thermal oxide
and plasma nitrided oxide
С
MAZURE,
J.
FITCH,
D.
DENNING,
С.
GUNDERSON,
M.
HAOND,
Α.
STRABONI,
В.
PIOT and
K. BARLA
Thin dielectric behavior and boron penetration under high temperature
H2
SEG prebake
47Э
P. LETOURNEAU, A. HARB, M. DUTOIT and J. SOLO
DE ZALDIVAR
Effect of nitrogen profile on electrical characteristics of ultrathin
SiO2 films nitrided by RTP 483
L. FERLAZZO, G. LORMAND and G.
REIMBOLD
Passivation effects on step AlCu/TiN line electromigration performance
487
Session V! A: BICMOS and Bipolar Technologies
A.R. ALVAREZ
Future trends in BiCMOS technology {Invited Paper)
493
H.
KLOSE
BICMOS
-
The technology for integrating systems onto one silicon
1С
(Invited Paper)
501
R. HADAWAY, P. KEMPF, P. SCHVAN,
M. ROWLANDSON,
V. HO,
J.
KOLK,
В.
TAIT,
D.
SUTHERLAND,
G.
JOLLY and I.
EMESH
A sub-micron BiCMOS technology for telecommunications
513
R.
DEKKER,
R.
VAN
ES, S.
JANSEN,
P.
KRANEN,
H.
MAAS,
A.
PRUIJMBOOM
and J. VAN
DER
VELDEN
Optimization of the high-frequency performance of the BASIC
bipolar technology
517
Y.S. KOO, S.H.
CHAI,
K.S. NAM and
С
AN
A
43
ps Si bipolar technology
521
M. BIANCO, K. EHINGER, B. HAUTKE, H.
KLOSE
and
H. v.
PHILIPSBORN
Borosilicate glass and its applications in bipolar technology
525
D.J. DOYLE and W.A. LANE
On the temperature dependence of polysilicon emitter transistors
529
Contents xxi
N. SIABI-SHAHRIVAR, H.A. KEMHADJIAN, W. REDMAN-WHITE,
P. ASHBURN and J.D. WILLIAMS
The effects of scaling and rapid thermal annealing on the 1/f Noise of
polysilicon emitter bipolar transistors
533
Session VI B:
Submicron
MOSFETs
J.-P.
MIÉVILLE,
M. ESCHLE, Z.M. SHI, J. BARRIER and M. DUTOIT,
Ü.M.
MORET and Y. OPPLIGER
Quantum transport effects in deep
submicron n-MOSFET
539
Z.M. SHI, J.-P.
MIÉVILLE,
J.
BARRIER and M. DUTOIT
Low frequency noise in
100
nm n-MOSFETs at low temperatures
543
0.
ROUX,
В.
DIERICKX,
E.
SIMOEN,
С.
CLAEYS,
G. GHIBAUDO
and J.
BRINI
Investigation
of
drain
current
RTS
noise in small area silicon
MOS transistors
547
M.J. VAN DORT, P.H. WOERLEE, A.J. WALKER, C.A.H. JUFFERMANS
and H. LIFKA
Effects of high normal electric fields in deep
submicron
MOSFETs
551
J.A.M.
OTŢEN
and
F.M. KLAASSEN
Determination of the gate-voltage dependent series resistance and
channel length in sub micron LDD-MOSFETs
555
T. SKOTNICKI, G. MERCKEL and
С
DENAT
Triggering and sustaining of snapback in MOSFETs
559
S.
LUCHERINI
A high threshold low capacitance MOSFET
563
Session
VI C:
Compound Semiconductor Devices
H.
KÜNZEL,
W.
PASSENBERG,
J.
BÖTTCHER
and
C. HEEDT
Optimization of the AllnAs growth temperature for AllnAs/GalnAs
HEMTs grown by MBE 569
M.V.
BAETA MOREIRA,
M.A. PY and M. ILEGEMS
MBE growth and characterization of MODFET heterostructures using
pseudomorphic InGaAs or InAs/GaAs superlattice channels
573
MA PY, Y. HADDAB, Z.M. SHI, H.-J.
BÜHLMANN,
M.V.
BAETA MOREIRA
and
M.
ILEGEMS
Extraction of
FET
parameters at low drain bias by taking into account
the dependence of mobility on 2D electron gas concentration
577
xxii Contents
E
ZANONI,
С.
TEDESCO, A. PACCAGNELLA,
С.
CANALI,
S.
BIGÜARDI and
M.
MANFREDI
High energy photon emission in GaAs MESFETs and AIGaAs/GaAs HEMTs
581
P. BHATTACHARYA, J. SINGH, S. GOSWAMI and W.-Q. LI
Integrated quantum well bipolar devices for tunable detection and
optical logic applications (Invited Paper) 585
K.
WOLTER,
R.
SCHWEDLER,
В.
GALLMANN,
Ch.
JAEKEL,
M.
STOLLENWERK, J. CAMASSEL,
J.P. LAURENTI and S. JUILLAGUET
Optical characterization of strained InGaAs/lnP quantum well structures
593
W. PITROFF, H.G. BACH and
G. BEISTER
On the numerical simulation of
С
-V
measurements at
isotype
and
anisotype heterojunctions
597
Session
VII A:
Non-Volatile Memories
M. MELANOTTE,
R. BEZ
and G. CRISENZA
Non
volatile memories
-
Status and emerging trends (invited Paper)
603
M.J. HART, P.J. CACHARELIS, R.D. CARPENTER, D.G. TSUEI,
R.U. MADURAWE, B.S. SANDHU, R.G.
SMOLEN,
A.P. DUMLAO,
T.L. GAVERICK, T. McFARLANE and M.H. MANLEY
A back-biased
0.65
џт
Leffn CMOS EEPROM technology for
next-generation sub
7
ns programmable logic devices
613
J. VAN
HOUDT,
D.
WELLEKENS,
G. GROESENEKEN,
L DEFERM
and H.E. MAES
The high injection
MOS
cell: A novel
öV-only
flash EEPROM concept
with a
^џs
programming time
617
С
PAPADAS,
G. GHIBAUDO, G. PANANAKAKIS,
С
RIVA
and P. GHEZZI
Programming window degradation in FLOTOX EEPROM cells
621
С
BERGONZONI,
E. CAMERLENGHI
and P. CAPRARA
Device simulations for
EPROM
cells scaling down
625
F. GIGON
Compact spice model of EEprom memory cell for writing/erasing/read
operation
629
A. SOENNECKEN, U. HILLERINGMANN and K. GOSER
Floating gate structures as nonvolatile analog memory cells in
1
.(^m-LOCOS-CMOS technology with PZT
dieléctrica
633
Contents xxiii
Session
VII
В:
Isolation
Techniques
W. WAKAMIYA,
Y.
OHNO,
H. KIMURA and S. SATOH
Sub-half
micron isolation
method with self-aligned channel stopper
639
N.A.H.
WILS
and
A.H.
MONTREE
A new sealed poly buffer LOCOS isolation scheme
643
G. GUEGAN, S. DELEONIBUS, M. LERME, G.
REIMBOLD
and P.
MOLLE
Optimisation of isolation for
0.5
μηι
CMOS technology using SILO
process with R. T.
N.
of silicon
647
J.P.
CABAÑAL
and M. HAOND
Improved shallow trench isolation for sub-half micron CMOS
651
G.
FALLICO,
С.
RAPISARDA, PJ. WARD and R. ZAMBRANO
A new process for defect-free definition of active areas in deep trench
isolated bipolar devices
655
Session
VII
С:
Nanostructures
L.
EAVES
Low dimensional devices: High magnetic field and optical spectroscopy
studies of resonant tunneling and quantum well phenomena {Invited Paper)
661
H. BRUGGER, U.
MEINERS,
С.
WÖLK,
R.
DEUFEL, A. MARTEN,
M. ROSSMANITH,
Κ. ν.
KLITZING and
R.
SAUER
Pseudomorphic two-dimensional electron-gas-emitter resonant
tunneling devices
663
Y.D. GALEUCHET,
H. ROTHUIZEN
and P. ROENTGEN
MOVPE on patterned substrates: A new fabrication method for nanometer
structure devices
667
N.
BLANC, P.
GUÉRET,
R. GERMANN and H. ROTHUIZEN
Study of vertical transport through Schottky-gated, laterally confined
quantum-dot devices 671
J-J.M. KWASPEN, H.C. HEYKER, Th.G. VAN
DE ROER
Microwave noise behaviour of resonant tunnelling diodes
675
AUTHOR INDEX 693
*
These papers arrived too late to be placed in their correct position
within the volume
|
| any_adam_object | 1 |
| building | Verbundindex |
| bvnumber | BV006623570 |
| callnumber-first | T - Technology |
| callnumber-label | TK7871 |
| callnumber-raw | TK7871.85 |
| callnumber-search | TK7871.85 |
| callnumber-sort | TK 47871.85 |
| callnumber-subject | TK - Electrical and Nuclear Engineering |
| classification_tum | ELT 340f |
| ctrlnum | (OCoLC)24320068 (DE-599)BVBBV006623570 |
| dewey-full | 621.381/52 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.381/52 |
| dewey-search | 621.381/52 |
| dewey-sort | 3621.381 252 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Conference Proceeding Book |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>02366nam a2200541 cb4500</leader><controlfield tag="001">BV006623570</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">00000000000000.0</controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">930324s1991 ad|| |||| 10||| eng d</controlfield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)24320068</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV006623570</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakddb</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-91</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">TK7871.85</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">621.381/52</subfield><subfield code="2">20</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">ELT 340f</subfield><subfield code="2">stub</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Solid state device research 91</subfield><subfield code="b">proceedings of the 21st European Solid State Device Research Conference ESSDERC '91, 16 - 19 September 1991 Montreux, Switzerland</subfield><subfield code="c">ed. by M. Ilegems ...</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Amsterdam u.a.</subfield><subfield code="b">Elsevier</subfield><subfield code="c">1991</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">XXIII, 697 S.</subfield><subfield code="b">Ill., zahlr. graph. Darst.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="0" ind2=" "><subfield code="a">Microelectronic engineering</subfield><subfield code="v">15</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Literaturangaben. - Einzelaufnahme eines Zs.-Bandes</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Semiconductors</subfield><subfield code="v">Congresses</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Festkörper</subfield><subfield code="0">(DE-588)4016918-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Festkörperbauelement</subfield><subfield code="0">(DE-588)4154179-0</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Mikroelektronik</subfield><subfield code="0">(DE-588)4039207-7</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleiterschaltung</subfield><subfield code="0">(DE-588)4158811-3</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleiterbauelement</subfield><subfield code="0">(DE-588)4113826-0</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="655" ind1=" " ind2="7"><subfield code="0">(DE-588)1071861417</subfield><subfield code="a">Konferenzschrift</subfield><subfield code="y">1991</subfield><subfield code="z">Montreux</subfield><subfield code="2">gnd-content</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Mikroelektronik</subfield><subfield code="0">(DE-588)4039207-7</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Halbleiterbauelement</subfield><subfield code="0">(DE-588)4113826-0</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="1" ind2="0"><subfield code="a">Festkörperbauelement</subfield><subfield code="0">(DE-588)4154179-0</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="2" ind2="0"><subfield code="a">Halbleiterschaltung</subfield><subfield code="0">(DE-588)4158811-3</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="2" ind2=" "><subfield code="8">1\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="3" ind2="0"><subfield code="a">Festkörper</subfield><subfield code="0">(DE-588)4016918-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="3" ind2=" "><subfield code="8">2\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Ilegems, Marc</subfield><subfield code="e">Sonstige</subfield><subfield code="4">oth</subfield></datafield><datafield tag="711" ind1="2" ind2=" "><subfield code="a">ESSDERC</subfield><subfield code="n">21</subfield><subfield code="d">1991</subfield><subfield code="c">Montreux</subfield><subfield code="j">Sonstige</subfield><subfield code="0">(DE-588)3012074-3</subfield><subfield code="4">oth</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="m">Digitalisierung TU Muenchen</subfield><subfield code="q">application/pdf</subfield><subfield code="u">http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=004233535&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA</subfield><subfield code="3">Inhaltsverzeichnis</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-004233535</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">1\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">2\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield></record></collection> |
| genre | (DE-588)1071861417 Konferenzschrift 1991 Montreux gnd-content |
| genre_facet | Konferenzschrift 1991 Montreux |
| id | DE-604.BV006623570 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T16:49:27Z |
| institution | BVB |
| institution_GND | (DE-588)3012074-3 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-004233535 |
| oclc_num | 24320068 |
| open_access_boolean | |
| owner | DE-91 DE-BY-TUM |
| owner_facet | DE-91 DE-BY-TUM |
| physical | XXIII, 697 S. Ill., zahlr. graph. Darst. |
| publishDate | 1991 |
| publishDateSearch | 1991 |
| publishDateSort | 1991 |
| publisher | Elsevier |
| record_format | marc |
| series2 | Microelectronic engineering |
| spelling | Solid state device research 91 proceedings of the 21st European Solid State Device Research Conference ESSDERC '91, 16 - 19 September 1991 Montreux, Switzerland ed. by M. Ilegems ... Amsterdam u.a. Elsevier 1991 XXIII, 697 S. Ill., zahlr. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Microelectronic engineering 15 Literaturangaben. - Einzelaufnahme eines Zs.-Bandes Semiconductors Congresses Festkörper (DE-588)4016918-2 gnd rswk-swf Festkörperbauelement (DE-588)4154179-0 gnd rswk-swf Mikroelektronik (DE-588)4039207-7 gnd rswk-swf Halbleiterschaltung (DE-588)4158811-3 gnd rswk-swf Halbleiterbauelement (DE-588)4113826-0 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 1991 Montreux gnd-content Mikroelektronik (DE-588)4039207-7 s Halbleiterbauelement (DE-588)4113826-0 s DE-604 Festkörperbauelement (DE-588)4154179-0 s Halbleiterschaltung (DE-588)4158811-3 s 1\p DE-604 Festkörper (DE-588)4016918-2 s 2\p DE-604 Ilegems, Marc Sonstige oth ESSDERC 21 1991 Montreux Sonstige (DE-588)3012074-3 oth Digitalisierung TU Muenchen application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=004233535&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 2\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Solid state device research 91 proceedings of the 21st European Solid State Device Research Conference ESSDERC '91, 16 - 19 September 1991 Montreux, Switzerland Semiconductors Congresses Festkörper (DE-588)4016918-2 gnd Festkörperbauelement (DE-588)4154179-0 gnd Mikroelektronik (DE-588)4039207-7 gnd Halbleiterschaltung (DE-588)4158811-3 gnd Halbleiterbauelement (DE-588)4113826-0 gnd |
| subject_GND | (DE-588)4016918-2 (DE-588)4154179-0 (DE-588)4039207-7 (DE-588)4158811-3 (DE-588)4113826-0 (DE-588)1071861417 |
| title | Solid state device research 91 proceedings of the 21st European Solid State Device Research Conference ESSDERC '91, 16 - 19 September 1991 Montreux, Switzerland |
| title_auth | Solid state device research 91 proceedings of the 21st European Solid State Device Research Conference ESSDERC '91, 16 - 19 September 1991 Montreux, Switzerland |
| title_exact_search | Solid state device research 91 proceedings of the 21st European Solid State Device Research Conference ESSDERC '91, 16 - 19 September 1991 Montreux, Switzerland |
| title_full | Solid state device research 91 proceedings of the 21st European Solid State Device Research Conference ESSDERC '91, 16 - 19 September 1991 Montreux, Switzerland ed. by M. Ilegems ... |
| title_fullStr | Solid state device research 91 proceedings of the 21st European Solid State Device Research Conference ESSDERC '91, 16 - 19 September 1991 Montreux, Switzerland ed. by M. Ilegems ... |
| title_full_unstemmed | Solid state device research 91 proceedings of the 21st European Solid State Device Research Conference ESSDERC '91, 16 - 19 September 1991 Montreux, Switzerland ed. by M. Ilegems ... |
| title_short | Solid state device research 91 |
| title_sort | solid state device research 91 proceedings of the 21st european solid state device research conference essderc 91 16 19 september 1991 montreux switzerland |
| title_sub | proceedings of the 21st European Solid State Device Research Conference ESSDERC '91, 16 - 19 September 1991 Montreux, Switzerland |
| topic | Semiconductors Congresses Festkörper (DE-588)4016918-2 gnd Festkörperbauelement (DE-588)4154179-0 gnd Mikroelektronik (DE-588)4039207-7 gnd Halbleiterschaltung (DE-588)4158811-3 gnd Halbleiterbauelement (DE-588)4113826-0 gnd |
| topic_facet | Semiconductors Congresses Festkörper Festkörperbauelement Mikroelektronik Halbleiterschaltung Halbleiterbauelement Konferenzschrift 1991 Montreux |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=004233535&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT ilegemsmarc solidstatedeviceresearch91proceedingsofthe21steuropeansolidstatedeviceresearchconferenceessderc911619september1991montreuxswitzerland AT essdercmontreux solidstatedeviceresearch91proceedingsofthe21steuropeansolidstatedeviceresearchconferenceessderc911619september1991montreuxswitzerland |