Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs: Stouffer Harborplace Hotel, Baltimore, Maryland, USA April 22 - 24
Gespeichert in:
| Körperschaft: | |
|---|---|
| Format: | Tagungsbericht Buch |
| Sprache: | English |
| Veröffentlicht: |
New York, NY
Inst. of Electrical and Electronics Engineers
1991
|
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | Literaturangaben |
| Beschreibung: | VIII, 260 S. graph. Darst. |
| ISBN: | 0780300092 0780300106 0780300114 |
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| 111 | 2 | |a International Symposium on Power Semiconductor Devices and ICs |n 3 |d 1991 |c Baltimore, Md. |j Verfasser |0 (DE-588)5059511-8 |4 aut | |
| 245 | 1 | 0 | |a Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs |b Stouffer Harborplace Hotel, Baltimore, Maryland, USA April 22 - 24 |c ed. by M. Ayman Shibib ... |
| 264 | 1 | |a New York, NY |b Inst. of Electrical and Electronics Engineers |c 1991 | |
| 300 | |a VIII, 260 S. |b graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
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| 655 | 7 | |0 (DE-588)1071861417 |a Konferenzschrift |y 1991 |z Baltimore Md. |2 gnd-content | |
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Datensatz im Suchindex
| _version_ | 1804120119326015488 |
|---|---|
| adam_text | PROCEEDINGS CONTENTS
FOREWARD
&
ACKNOWLEDGEMENT
........................................................
page
1
OVERVIEW
............................................................................................................
page3
Session! PLENARY
..............................................................................................................
page
11
Session
2
DIELECTRIC ISOLATION TECHNOLOGY
.................................................
page
25
Session
3 1С
PROCESSES
....................................................................................................
page
49
Session
é
DEVICE MODELS.
.............................................................................................
.page
77
Session
5
LIGBTS
/
DIODES
...............................................................................................
page
95
Session
6 THYRISTORS....................................................................................................
page
119
Session
7
DEVICE PHYSICS I
..........................................................................................
page
143
Session
8
DEVICE PHYSICS II
.........................................................................................
page
169
Session
9
PROCESS TECHNOLOGY..
............................................................................
page
193
Session
10
INSULATED GATE BIPOLAR TRANSISTORS (IGBTS)
........................
page
209
Session
11
APPLICATIONS
................................................................................................
page
229
AUTHOR INDEX,...
...........................................................................................
page
258
TABLI
OF CONTENTS
WELCOMING REMARKS: Forward
&
Acknowledgement
9:00 - 9:15...............................
page
1
OVERVIEW
.........................................................................................................................................
page3
Sessioni
PLENARY
.............................................................................................................................................
page
9
Paper
1.1 9:15
to
10:00
Computer Aided Design Tools for Power ICs
W. Fkhtner, ETH-Z, Switzerland
.......................................................................................................
page
11
•
Paper
2.2 10:00
to
10:45
Impact of Dielectric Isolation Technology on Power ICs
A
Nakagawa,
Toshiba
R&D, Japan
...............................,...................................................................
page
16
»Paper
1.3 10:45
to
11:30
Packaging Technology for Smart Power Applications
С
Neugebauer, GE-R&D, USA
......................................................................................................
page
22
Session
2
DIELECTRIC ISOLATION TECHNOLOGY
.............................................................................
page
25
»Paper
2.1 1:00
to
1:25
Extention of
Resurf
Principle to Dielectrically Isolated Power Devices
Y.S. Huang
&
B.J.
Baliga,
North Carolina State University, USA
....................................................
page
27
•Paper
2.2 1:25
to
1:50
Realization of High Breakdown Voltage (>700V) in Thin SOI Devices)
S. Merchant, E. Arnold, H.
Baumgart,
S.
Mukherjee,
H.
Pein,
and
R.
Pinker,
North American Philips Laboratory, USA
..........................................................................................
page
31
•Paper
2.3 1:50
to
2:15
High Voltage Silicon-On-Insulator (SOI) MOSFETs
Q.
Lu,
P. Ratnam
&
CAT.
Salama,
University of Toronto, Canada
.................................................
page
36
•Paper
2.4 2:15
to
2:40
600V, 25A Dielectrically Isolated Power
1С
with Vertical IGBT
T. Mizaguti, M. Mori, T.
ЅМгаѕагм
&
Y.
Sugavmra, Hitachi Research
Lab.,
Japan
.........................
page
40
•Paperi
2:40
to
3:05
An Application of MSSD to Dielectrically Isolated Intelligent Power
1С
T.
Aso,
Я.
Mízuide,
T.
Usui,
К.
Akahane,
N.
Ishikmm, í.
Hide,
and Y. Maeda,
OKI Electric
Industry Co.,
Ltd., Japan
................................................................................................
page
45
Session
3
ICPROCESSES
.................................................................................................................................
page
49
•Paper
3.1 3:15
to
3:40
A Scaled CMOS
-
Compatible Smart Power
1С
Technology
S. Wong, M. Kim, J.C. Young, and S. Mukherjee, North American Philips
Lab., USA
....................
page
51
•Paper
3.2 3:40
to
4:05
Integration of a 200V, 60MHz Lateral PNP Transistor with Emitter-Base Self-Aligned to
Polysilicon, Into a High Voltage BiCMOS Process
M.P. Masquelier and D.N. Okada, Motorola, Inc., USA
....................................................................
page
56
•
Paper
3.3 4:05
to
4:30
Low On-Resistance Power LDMOSFET Using Double Metal Process Technology
M. Hosht, T. Mihara, T. Matsushita, and Y. Hirota, Nissan Motor Co., Ltd., Japan
.....................
—Page
61
•Paper
3.4 4:30
to
4:55
P-ch and N-ch IGBTs for Push-Pull Circuit in Driver ICs
K. Tsuchiya, Fufi Electric Corp., Japan
................................................................................................
page
65
•
Paper
3.5
(L)
4:55
to
5:10
N-ch IGBT with High Reverse Blocking Capability for Multipoint Differential One Drivers
N.
Fujishima, Y. Yano, G.
Tada,
and
К.
Tsuchiya, Fuji Electric Corp., Japan
...................................
page
70
TABLE
OF CONTENTS, continued
Session
4
DEVICE MODELS
...........................................................................................................................
page
77
*
Paper
4.1 8:30
to
8:55
An Analytical IGBT Model for Power Circuit Simulation
Z. Shen andT.P. Chow,
Rensseker
Polytechnic Institute, USA
........................................................
page
79
•
Paper
4.2 8:55
to
9:20
Effect of Scaling on High-Frequency Switching Efficiencies of Power MOSFETs
K. Shenai, GE-CR&D Center, USA
..................................................................................................
page
83
Paper
4.3 9:20
to
9:45
A New Device Model of VDMOSFET for SPICE Simulations
N.S. Dogan and E.
Umno,
Washington State University, USA
.......................................................
page
84
•Paper
4.4 9:45
to
10:10
Electrothermal Simulation of Power Semiconductor Devices
P.A.
Gough, P. Walker and K.R. Whight, Philips Research Laboratories, England
...........................
page
89
Sessions LIGBTS/ DIODES
...........................................................................................................................
page
95
»Paper
5.1 10:20
to
10:45
Fast LIGBT Switching Due to Plasma Confinement Through Pulse Width Control
Í.
Wacyk, R. Jayaraman,
L
Casey, and]. Sin, North American Philips Labs., USA
..........................
page
97
»Paper
5.2 10:45
to
11:10
Performance of 200V CMOS Compatible Auxiliary Cathode Lateral Insulated
Gate Transistors
EM. Sankara Narayanan, G. Amartunga, W.I. Milne, and Q. Huang
Unixxrsity of Cambridge, England
....................................................................................................
page
103
•Paper
5.3 11:10
to
11:35
Optimization of the MPS Rectifier via Variation of Schottky Region Area
S.H. Larry
Tu
and B.J.
Baliga,
North Carolina State University, USA
...........................................
page
109
•Paper
5.4 11:35
to
12:00
A Novel Soft and Fast Recovery Diode (SFD) with Thin p-Layer Formed by AISi Electrode
M. Mori, Y. Yasuda,
N.
Sakurai, and Y. Sugawara, Hitachi Research
Lab.,
Japan
..........................
page
113
Sessione
THYRISTORS.................................................................................................................................
page
119
•Paper
6.1 1:00
to
1:25
Correlation Between Local Segment Characteristics and Dynamic Current
Redistribution in GTO Power
Thyristors
CM. Johnson andP.R. Palmer, Cambridge University, UK
A.A.
Jaecklin and P.
Streit,
Asea
Brawn
boven
Corp., Switzerland
................................................
page
121
•Рарегб.!
1:25
to
1:50
Experimental Demonstration of the Emitter Switched
Thyristor
M.S. Shekar, B.J.
Baliga,
M. Nandakumar, S. Tandon,
and
Α.
Reisman,
North
Caroüna State
University,
USA
.............................................................................................
page
128
•Paper
6.3 1:50
to
2:15
Numerical Analysis of Switching in IGBT Triggered
Thyristors
H.
ЅитШ,
К.
Veno,
and
N.
Immuro Fuji Electric Corp. R&D,
Japan
........................................
page
132
•Paper
6.4 2:15
to
2:40
The Base
Resistance Controlled
Thyristor
(BRT):
A New MOS-Gated Power
Thyristor
M. Nandakumar,
В.}.
Baliga,
M.S. Shekar, S. Tandon, and A. Reisman,
North Carolina State University,
USA
.............................................................................................
page
TABLE
OF
CONTENTS,
continued
Session
7
DEVICE PHYSICS I
.......................................................................................................................
page
143
•
Paper
7.1 3:15
to
3:40
SIPOS-Passivation for High Voltage Power Devices with Planar Junction Termination
T. Stockmeier, Asm Brown BoveriCorp. Res., Switzerland
..............................................................
page
145
•Paper
7.2 3:40
to
4:05
Optimization of the Breakdown Voltage in
ШМОЅ
Transistors Using Internal Field Rings*
A. Nezarand
САЛ.
ЅаЈдта,
University of Toronto, Canada
..........................................................
page
149
•
Paper
7.3
4:05to4:30
Modeling of the Transient Ionizing Radiation Response of an Inductively-Loaded
Power MOSFET
A.A.
Keshavarz, G.A. Franz, and
CF.
Hawkins, University of New Mexico, USA
........................
page
154
•Paper
7.4 4:30
to
4:55
Improvement of High Speed Blocking Voltage by Means of a Metal Field Plate for GaAs
Schottky Power Rectifiers
К
OhtsukaandY.
Usui,
Sanken
Electric Co., Ltd., Japan
................................................................
page
159
•
Paper
7.5
(L)
4:55
to
5:10
Impact Ionization in Saturated High-Voltage LDD Lateral DMOSFETs
M.E. Cornell,R.K. Williams,
anali.
Yilmza, Siliconix Inc., USA
..................................................
page
164
Session
8
DEVICE PHYSICS
Π
.....................................................................................................................
page
169
•Paper
8.1 8:30
to
8:55
New Method of Carrier Lifetime Measurement for Accurate Power Device Simulation
A. Yahata, Y. Yamaguchi, A. Nakagawa, andH. Ohashi, ToshibaR&DCenter, Japan
................
Pa8e
171
•Paper
8.2 8:55
to
9:20
Analysis of Silicon Carbide Power Device
Performance
M.
Bhatnagar and
Ђ.Ј,
Baligi,
North Carolina State University, USA
............................................
page
176
•Paper
8.3 9:20
to
9:45
CMOS Compatible 250V Lateral Insulated Base
Transistor
EM. Sankara Narayanan, G. Amaratunga, W.I. Milne, and Q. Huang,
University of Cambridge, Engknd
....................................................................................................
page
181
•
Paper
8.4
(L)
9:45
to
10:00
Partial Lifetime Control in IGBT by Helium Irradiation Through Mask Patterns
H. AMyama, M.
Horada,
H.
Kondoh,
Y.
Akasaka,
Mitsubishi
Eleđric
Corp., Japan
.......................
page
187
Session
9
PROCESS TECHNOLOGY
..........................................................................................................
page
193
•
Paper
9.1 10:10
to
10:35
SPT-A New Smart Power Technology with a Fully Self-Aligned DMOS Cell
A. Preussger, E. Glenz, K.
Heiß,
К.
Malek,
W. Sćkwdlich,
К.
Wiesinger,
and W.M. Werner,
Siemens Ag
Semiconduăor
Group, Germany
...................................................................................
page
195
•Paper
9.2 10:35
to
11:00
A Novel Trench Planarization Technique Using Polysilicon Refill, Polysilicon
Oxidation and Oxide Etchback
К
Shenai, W. Hennessy, R.
Saia,
and M. Ghezzo, GE
-
Corporate R&D, USA
............................
page
198
•Paper
9.3 11:00
to
11:25
Quasi-Dielectrically Isolated Bipolar Junction Transistor with Sub-Collector Fabricated
Using Silicon Selective Epitaxy
P.V. Gilbert,
G.W. Neudeck,
J.P. Dentm.and S.J. Duey, Purdue University, USA
.......................
page
199
•
Paper
9.4 11:25
to
11:50
Application of Dielectric Isolation Technology Based on Soot Bonding
R
Sawada, and H. Nakada, NTT Applied
Eleđronks
Lab, Japan
....................................................
page
203
vii
TABLE
OF CONTENTS, continued
Session
10
INSULATED GATE BIPOLAR TRANSISTORS (IGBTS)
....................................................
page
209
Paper
10.1 1:00
to
1:25
The Vertical IGBT with an Implanted Buried Layer
S. Eranen andM. Bkmberg, Tech. Res. Center of Finknd, Finland
................................................
page
211
Paper
10.2 1:25
to
1:50
A 1500VIGBT with a Self-Aligned DMOS Structure for High Resolution CRT
Operated up to 100KHz
M. Mori, Y.
Nakano,
Y.
Yasuda,
T.
Yatsuo and Y. Sugawara, Hitachi Research
Lab.,
Japan
.........
page
215
•Paper
10.3 1:50
to
2:15
Switching Loss Analysis of Shorted Drain
Non
Punch-Through and Punch-Through
Type IGBTs in Voltage Resonant
arcuit
N.
Iwamuro, Y. Hoshi, Y.
Seid,
and
N.
Kumagai, Fuji Electric Corp., Japan
...................................
page
220
•
Paper
10.4
(L)
2:15
to
2:30
Operation of IGBTs at Low Temperatures
T.P. Chow, K.-C. So, and D.
Lau,
Rensselaer Polytechnic Institute, USA
.......................................
page
226
Session
11
APPLICATIONS
.............................................................................................................................
page
229
»Paper
11.1 2:40
to 3№
High Voltage Video Amplifier
1С
for Color Television
K. Kawamoto, T. Tanaka, S. Sugayama, H. Ohki, S. Terada, andM. Kamiya,
Hitachi, Ltd., Japan
............................................................................................................................
page
231
Paper
11.2 3:05
to
3:30
High Switching Speed 1500V IGBT for CRT Deflection Circuit
У.
Seid,
Y.
Hoshi,
H. Shimabukura,
N.
Suganuma, A. Nishiura, and Y. Uchida,
Fuß
Electric Corp., Japan
...................................................................................................................
page
237
•Paper
113 3:30
to
3:55
Self-Isolation NMOS-DMOS Technology for Automotive Low-Side Switches
T. Fujumra, K. Yoshida, T. Mizuno, K. Sakurai, and Y. Uchida, Fuji Electric Corp., Japan
...........
page
242
Paper
11.4 3:55
to
4:20
A Novel High Voltage Three-Phase Monolithic Inverter
1С
with Two Current
Levels Seneing
H.
Miyazaki, N.
Subtrai,
К.
Onida,
T.
Tanaka,
M.
Mori,
M.
Wada, and
H. Matsuzaki,
Hitachi, Ltd., Japan
............................................................................................................................
page
248
•
Paper
11.5
(L)
4:20
to
4-35
MOSFET
Flyback-Diode Conduction and dV/dt Effects
in Power
ICs Used in Low
Voltage
Motor
Control
Applications
KL·
WüMsm,
МЛ Сотт,
andJ.D.
Harnden, Süiconix Inc., USA.............................................
page
254
AUTHOR
INDEX...........................................................................................................................
page
258
AUTHOR INDEX
Akahane, K, OKI Electric Industry Co., Ltd., Japan
.................................................................................................
page
45
Akasaka, Y., Mitsubishi Electric Corp., Japan
..........................................................................................................
page
187
Ałdyama,
H.,
Mitsubishi Electric Corp., Japan
........................................................................................................
page
187
Amarhmga, G., University of Cambridge, England
..........................................................·............................
page
103,181
Arnold, E., Philips Research Laboratories, USA
........................................................................................................
page
31
Aso,
T.,
OKI Electric Industry Co., Ltd., Japan
..........................................................................................................
page
45
Baliga, B.J.,
North Carolina State University, USA
...........................................................
page
1,3,27,109,128,138,176
Baumgart,
H.,
Philips Research Laboratories, USA
..................................................................................................
page
31
Bhatnagar, M., North Carolina State University, USA
...........................................................................................
page
176
Blomberg,
M.,
Tech. Res. Center of Finland, Finland
............................................................................................
page
211
Casey, L., Philips Research Laboratories, USA
..........................................................................................................
page
97
Chow, T.P., Rensselaer Polytechnic Institute, USA
...........................................................................................
page
79,226
Cornell, M.E., Siliconix Inc., USA
.......................................................................................................................
page
164,254
Dentón, J.P.,
Purdue University, USA
.......................................................................................................................
page
199
Dogan, N.S., Washington State University, USA
......................................................................................................
page
84
Duey, S.J., Purdue University, USA
..........................................................................................................................
page
199
Eranen, S., Tech. Res. Center of Finland, Finland
...................................................................................................
page
211
Fichtner, W., ETH-Z, Switzerland
................................................................................................................................
page
11
Franz, G.A.,
University of New Mexico, USA
.........................................................................................................
page
154
Fujihara»
T., Fuji
Electric Corp., Japan
.......................................................................................................................
page
242
Fujishima, N., Fuji Electric Corp., Japan
.....................................................................................................................
page
70
Ghezzo, M., GE
-
Corporate
R
&
D,
USA
..................................................................................................................
page
198
Gilbert, P.V, Purdue University, USA
......................................................................................................................
page
199
Glenz; E., Siemens Ag Semiconductor Group, Germany
.......................................................................................
page
195
Gough,
P.A.,
Philips Research Laboratories, England
..............................................................................................
page
89
Harada, M., Mitsubishi Electric Corp., Japan....
.......................................................................................................
Page
187
Hamden, J.D.,
Siliconix Inc., USA
..............................................................................................................................
page
254
Hawkins,
CF.,
University of New Mexico, USA
.....................................................................................................
page
154
Heift, K., Siemens Ag Semiconductor Group, Germany
........................................................................................
page
195
Hennessy, W., GE
-
Corporate
R &D,
USA
.............................................................................................................
page
198
Hide, L, OKI Electric Industry Co., Ltd., Japan
.........................................................................................................
page
45
Hirota, Y., Nissan Motor Co., Ltd., Japan
...................................................................................................................
page
61
Hoshi, M., Nissan Motor Co., Ltd., Japan
...................................................................................................................
page
61
Hoshi, Y., Fuji Electric Corp., Japan
...................................................................................................................
page
220,237
Huang, Q., University of Cambridge, England
............................................................................................
...page
103,181
Huang, Y.S., Norm Carolina State University, USA
.................................................................................................
page
27
Ishikawa, N., OKI Electric Industry Co., Ltd.» Japan
................................................................................................
page
45
Iwamuro,
N.,
Fuji Electric Corp.
R
&
D,
Japan
................................................................................................
page
132,220
Jaecklin,
A.A.,
Asea
Brown Boveri, Corp., Switzerland
...................,.....................................................................
page
121
Jayaraman, R., Philips Research Laboratories, USA
.................................................................................................
page
97
Johnson,
СМ.,
Cambridge University, UK
..............................................................................................................
page
121
Kamiya, M., Hitachi, Ltd., Japan
................................................................................................................................
page
231
Kawamoto,
К-,
Hitachi, Ltd., Japan
----------.___...................................................................................................
page
231
Keshavarz»
A.A.,
University of New Mexico, USA
.....................................................................................,...........
page
154
Kim, M., Philips Research Laboratories, USA
............................................................................................................
page
51
Kondoh, H., Mitsubishi Electric Corp., Japan
..........................................................................................................
page
187
Kumagai, N., Fuji Electric Corp., Japan
....................................................................................................................
page
220
Laa, D, Rensselaer Polytechnic Institute, USA
.......................................................................................................
page
226
Lozano,
E,,
Washington State University, USA
.........................................................................................................
page
84
Lu,
Q.,
University of Toronto, Canada.
...............................................................................................,.......................
page
36
258
Maeda, Y.,
OKI Electric Industry Co., Ltd., Japan
.....................................................................................................
page
45
Malek, K., Siemens Ag Semiconductor Group, Germany
......................................................................................
Page
195
Masquelier, M.P., Motorola, Inc., USA
........................................................................................................................
page
56
Matsushita,
T.,
Nissan Motor Co., Ltd., Japan
...........................................................................................................
page
61
Matsuzaki, H., Hitachi, Ltd., Japan
............................................................................................................................
page
248
Merchant, S., Philips Research Laboratories
..............................................................................................................
Page
31
Mihara,
T.,
Nissan Motor Co., Ltd., Japan
..................................................................................................................
Pa8e
61
Milne, W.I., University of Cambridge, England
..............................................................................................
page
103,181
Miyazaki,
H.,
Hitachi, Ltd., Japan
..............................................................................................................................
Page
248
Mizoguti,
T.,
Hitachi Research
Lab.,
Japan
................................................................................................................
page
40
Mizuide, H., OKI Electric Industry Co., Ltd., Japan
..................................................................................................
page
45
Mizuno,
T., Fuji
Electric Corp., Japan
........................................................................................................................
page
242
Mori, M., Hitachi Research
Lab.,
Japan
...............................................................................................
page
40,113,215,248
Mukherjee, S., Philips Research Laboratories, USA
............................................................................................
Page
31,51
Nakada, H., NTT Applied Electronics Lab, Japan
...................................................................................................
page
203
Nakagawa,
Α.,
Toshiba
R
&
D,
Japan
..................................................................................................................
page
16,171
Nakano,
Y.,
Hitachi Research
Lab.,
Japan
................................................................................................................
page
215
Nandakumar, M., North Carolina State University, USA
..............................................................................
page
128,138
Neudeck, G.W.,
Purdue University, USA
................................................................................................................
page
199
Neugebauer, C, GE
-
Corporate
R
&
D,
USA............................................................................................................
page
22
Nezar,
Α.,
University of Toronto, Canada
................................................................................................................
Page
149
Nishiura,
Α.,
Fuji Electric Corp., Japan
.....................................................................................................................
page
237
Ohashi, H., Toshiba
R
&
D
Center, Japan
.................................................................................................................
page
171
Ohki, H., Hitachi, Ltd., Japan
.....................................................................................................................................
page
231
Ohtsuka, K.,
Sanken
Electric Co., Ltd., Japan
..........................................................................................................
page
159
Okada, D.N., Motorola, Inc., USA
...............................................................................................................................
page
56
Onida, K., Hitachi, Ltd., Japan
....................................................................................................................................
page
248
Palmer, P.R., Cambridge University, UK
.................................................................................................................
page
121
Pein,
H.,
Philips Research Laboratories, USA
............................................................................................................
page
31
Pinker, R., Philips Research Laboratories, USA
.........................................................................................................
page
31
Preussger,
Α.,
Siemens Ag Semiconductor Group, Germany
...............................................................................
page
195
Ratnam, P., University of Toronto, Canada
...................................................................___......................................
Page
36
Reisman,
Α.,
North Carolina State University, USA
.......................................................................................
page
128,138
Saia,
R.,
GE
-
Corporate
R
&
D,
USA
.........................................................................................................................
page
198
Sakurai,
К.,
Fuji Electric Corp., Japan
........................................................................................................................
page
242
Sakurai, N., Hitachi Research
Lab.,
Japan
................................................................................................................
page
113
Salama, CA.T.,
University of Toronto, Canada
.................................................................................................
page
36,149
Sankara Narayanan, E.M., University of Cambridge, England
.....................................................................
page
103,181
Sawada, R., NTT Applied Electronics Lab, Japan
...................................................................................................
page
203
Schwetlich, W., Siemens Ag Semiconductor Group, Germany
..............................................».............................
page
195
Seki, Y., Fuji Electric Corp., Japan
......................................................................................................................
page
220,237
Shekar, M.S., North Carolina State University, USA
......................................................................................
page
128,138
Shen, Z., Rensselaer Polytechnic Institute, USA
........................................................................................................
page
79
Shenai, K., GE
-
Corporate R&D, USA
................................................................................................................
page
83,198
Shimabukura, H., Fuji Electric Corp., Japan
.............................................................................................................
page
237
Shibib,
Α.,
AT&T Bell Laboratories, USA
.................................................................................................................
page
1,3
Shirasawa,
T.,
Hitachi Research
Lab.,
Japan
.............................................................................-----.........................
page
40
Sin, J., Philips Research Laboratories, USA
...................................................................................................·............
page
97
So, iC-C, Rensselaer Polytechnic Institute, USA
.....................................................................................................
page
226
Stockmeier,
T.,
Asea
Brown Boveri Corp. Res., Switzerland
.................................................................................
page
145
Streit,
P.,
Asea
Brown Boveri Corp., Switzerland
............■......................................................................................
page
121
Suganuma, N., Fuji Electric Corp., Japan
..................................................................................................................
page
237
Sugawara, Y., Hitachi Research
Lab.,
Japan
...............................................................................................
page
40,113,215
939
Sugayaraa,
S., Hitachi,
Ltd., Japan
.............................................................................................................................
page
231
Sukurai, N., Hitachi, Ltd., Japan
................................................................................................................................
page
248
Sumida,
H.,
Fuji Electric Corp.
R
&
D,
Japan
...........................................................................................................
page
132
Tada,
G., Fuji
Electric Corp., Japan
..............................................................................................................................
page
70
Tanaka,
T.,
Hitachi, Ltd., Japan
..........................................................................................................................
page
231,248
Tandon, S.,
North Carolina State University, USA
.........................................................................................
page
128,138
Terada, S., Hitachi, Ltd., Japan
...................................................................................................................................
page
231
Tsuchiya,
К.,
Fuji Electric Corp., Japan
.................................................................................................................
page
65,70
Tu, S.H.
Larry, North Carolina State University, USA
...........................................................................................
page
109
Uchida, Y., Fuji Electric Corp., Japan
................................................................................................................
page
237,242
Usui,
T.,
OKI Electric Industry Co., Ltd., Japan
.........................................................................................................
page
45
Usui,
Y.,
Sanken
Electric Co., Ltd., Japan
.................................................................................................................
page
159
Veno, K.,
Fuji Electric Corp.
R
&D, Japan
................................................................................................................
page
132
Wacyk, I., Philips Research Laboratories, USA
.........................................................................................................
page
97
Wada,
M.,
Hitachi, Ltd., Japan
...................................................................................................................................
page
248
Walker, P., Philips Research Laboratories, England
.................................................................................................
page
89
Werner, W.M., Siemens Ag Semiconductor Group, Germany
..............................................................................
page
195
Whight, K.R., Philips Research Laboratories, England...
..........................................................................................
page
89
Wiesinger,
К.,
Siemens
Ag
Semiconductor Group, Germany
...............................................................................
page
195
Williams, R.K., Siliconix Inc., USA
.....................................................................................................................
page
164,254
Wong, S., Philips Research Laboratories, USA
..........................................................................................................
page
51
Yahata,
Α.,
Toshiba
R
&
D
Center, Japan
..................................................................................................................
page
171
Yamaguchi, Y., Toshiba
R
&
D
Center, Japan
..........................................................................................................
page
171
Yano, Y., Fuji Electric Corp., Japan
..............................................................................................................................
page
70
Yasuda, Y., Hitachi Research
Lab.,
Japan
.........................................................................................................
page
113,215
Yatsuo,
T.,
Hitachi Research
Lab.,
Japan
..................................................................................................................
page
215
Yiimza, H., Siliconix Inc., USA
...................................................................................................................................
page
164
Yoshida, K., Fuji Electric Corp., Japan
......................................................................................................................
page
242
Young, J.C, Philips Research Laboratories, USA
......................................................................................................
page
51
260
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| spelling | International Symposium on Power Semiconductor Devices and ICs 3 1991 Baltimore, Md. Verfasser (DE-588)5059511-8 aut Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs Stouffer Harborplace Hotel, Baltimore, Maryland, USA April 22 - 24 ed. by M. Ayman Shibib ... New York, NY Inst. of Electrical and Electronics Engineers 1991 VIII, 260 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Literaturangaben Leistungshalbleiter (DE-588)4167286-0 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 1991 Baltimore Md. gnd-content Leistungshalbleiter (DE-588)4167286-0 s DE-604 Shibib, M. A. Sonstige oth Digitalisierung TU Muenchen application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=003712952&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs Stouffer Harborplace Hotel, Baltimore, Maryland, USA April 22 - 24 Leistungshalbleiter (DE-588)4167286-0 gnd |
| subject_GND | (DE-588)4167286-0 (DE-588)1071861417 |
| title | Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs Stouffer Harborplace Hotel, Baltimore, Maryland, USA April 22 - 24 |
| title_auth | Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs Stouffer Harborplace Hotel, Baltimore, Maryland, USA April 22 - 24 |
| title_exact_search | Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs Stouffer Harborplace Hotel, Baltimore, Maryland, USA April 22 - 24 |
| title_full | Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs Stouffer Harborplace Hotel, Baltimore, Maryland, USA April 22 - 24 ed. by M. Ayman Shibib ... |
| title_fullStr | Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs Stouffer Harborplace Hotel, Baltimore, Maryland, USA April 22 - 24 ed. by M. Ayman Shibib ... |
| title_full_unstemmed | Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs Stouffer Harborplace Hotel, Baltimore, Maryland, USA April 22 - 24 ed. by M. Ayman Shibib ... |
| title_short | Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs |
| title_sort | proceedings of the 3rd international symposium on power semiconductor devices and ics stouffer harborplace hotel baltimore maryland usa april 22 24 |
| title_sub | Stouffer Harborplace Hotel, Baltimore, Maryland, USA April 22 - 24 |
| topic | Leistungshalbleiter (DE-588)4167286-0 gnd |
| topic_facet | Leistungshalbleiter Konferenzschrift 1991 Baltimore Md. |
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