Amorphous silicon technology, 1990: symposium held April 17 - 20, 1990, San Francisco, California, U.S.A.
Gespeichert in:
| Format: | Tagungsbericht Buch |
|---|---|
| Sprache: | English |
| Veröffentlicht: |
Pittsburgh, Pa.
Materials Research Soc.
1990
|
| Schriftenreihe: | Materials Research Society: Materials Research Society symposia proceedings
192 |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | Literaturangaben |
| Beschreibung: | XVI, 796 S. Ill., graph. Darst. |
| ISBN: | 155899081X |
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| 245 | 1 | 0 | |a Amorphous silicon technology, 1990 |b symposium held April 17 - 20, 1990, San Francisco, California, U.S.A. |c eds.: P. C. Taylor ... |
| 264 | 1 | |a Pittsburgh, Pa. |b Materials Research Soc. |c 1990 | |
| 300 | |a XVI, 796 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 1 | |a Materials Research Society: Materials Research Society symposia proceedings |v 192 | |
| 500 | |a Literaturangaben | ||
| 650 | 4 | |a Amorphous semiconductors |v Congresses | |
| 650 | 4 | |a Silicon alloys |v Congresses | |
| 650 | 4 | |a Solar cells |x Materials |v Congresses | |
| 650 | 0 | 7 | |a Silicium |0 (DE-588)4077445-4 |2 gnd |9 rswk-swf |
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| 655 | 7 | |0 (DE-588)1071861417 |a Konferenzschrift |y 1990 |z San Francisco Calif. |2 gnd-content | |
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| 689 | 0 | 1 | |a Amorpher Zustand |0 (DE-588)4306087-0 |D s |
| 689 | 0 | 2 | |a Halbleitertechnologie |0 (DE-588)4158814-9 |D s |
| 689 | 0 | |5 DE-604 | |
| 700 | 1 | |a Taylor, Philip C. |e Sonstige |4 oth | |
| 711 | 2 | |a Symposium on Amorphous Silicon Technology |d 1990 |c San Francisco, Calif. |j Sonstige |0 (DE-588)5076904-2 |4 oth | |
| 830 | 0 | |a Materials Research Society: Materials Research Society symposia proceedings |v 192 |w (DE-604)BV001899105 |9 192 | |
| 856 | 4 | 2 | |m Digitalisierung TU Muenchen |q application/pdf |u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=003704151&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |3 Inhaltsverzeichnis |
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Datensatz im Suchindex
| _version_ | 1804120106108715008 |
|---|---|
| adam_text | Contents
PREFACE
xv
MATERIALS RESEARCH SOCIETY SYMPOSIUM
PROCEEDINGS
xvii
PARTI:
SOLAR
CELLS
*
ACHIEVEMENT OF MORE THAN
10%
EFFICIENCY FOR A SINGLE-
3
JUNCTION
100
cm2
а
-Si
SOLAR CELL AND DEVELOPMENT OF A
NEW-TYPE MODULE STRUCTURE
Y. Hishikawa, M. Ohnishi and Y. Kuwano
*
STUDY OF
BANDGAP
PROFILING CONTROL ON PHOTOVOLTAIC
15
PERFORMANCE IN THE THREE STACKED AMORPHOUS SOLAR
CELLS
Y.
Nakata,
H.
Sannomiya,
S.
Moriuchi,
A. Yokota, Y. Inoue, M. Itoh
and H. Itoh
*
PROSPECTS
OF a-SiGe:H
ALLOYS FOR SOLAR CELL APPLICATION
27
CM.
Fortmann
PHOTOELECTRONIC PROPERTIES OF THE pipi...MULTILAYERS
39
AND THEIR IMPLICATIONS FOR THE OPERATION OF SOLAR CELLS
L. Yang, I. Balberg and S.
Skibo
AMORPHOUS HYDROGENATED SILICON p-i-n SOLAR CELLS
45
GROWN FROM HYDROGEN-DILUTED SILANE
M.S. Bennett and
J.C. Tu
POST INITIAL LIGHT INDUCED DEGRADATION STABILITY AND
51
PERFORMANCE OF AMORPHOUS SILICON MODULES
W.B. Berry, M.J.
Hahn
and L. Mrig
IMPROVED BLUE RESPONSE OF AMORPHOUS SILICON ALLOY
57
SOLAR CELLS
A. Banerjee and S. Guha
1.00
MeV PROTON INDUCED DEFECTS IN a-Si:H THIN FILMS
63
AND SOLAR CELLS
J.S. Payson, S. Abdulaziz, Y. Li and J.R.
Woodyard
OPTIMIZATION OF TEXTURED
TCO
SUBSTRATES FOR a-Si
69
SOLAR CELLS
M. Komakme, H. Nishimura, Y. Gotoh, K. Sato and K. Kondo
FLUORINATED
SILICON NITRIDE (a-Si:N,F,H) FILMS USING NFS
75
FOR AMORPHOUS SILICON BASED SOLAR CELLS
F.H.C.
Goh, S.M.
Tan, K. Ng,
H.A.
Naseem, W.D. Brown and
A.M. Hermann
MATERIAL PROPERTIES OF
p
-ΤΥΡΕ
a-SiC LAYERS USING EITHER
81
DIBORANE OR TRIMETHYLBORON AS DOPING GAS
P. Lechner, M. Gorn, H.
Rubel,
B. Scheppat
and
N.
Kniffler
*Invited Paper
PART II:
ELECTRONIC
DENSÌTY
OF STATES: BULK
THE MOVEMENT OF MOBILITY EDGES IN HYDROGENATED
89
AMORPHOUS SILICON
S. Lee, D. Heller and C.R.
Wroński
DEFECT DENSITY IN DOPED a-Si:H FILMS
95
K.
Pierz,
H.
Mell
and
W.
Fuhs
TIME RESOLVED ELECTROLUMINESCENCE IN a-Si:H p-j-n
101
JUNCTIONS
R. Carius
EXCITATION SPECTROSCOPY OF
PHOTOLUMINESCENCE
OF a-Si:H
107
S.Q. Gu and
P.C.
Taylor
OPTICAL PHENOMENA AT THE ABSORPTION EDGE OF
113
CRYSTALLINE AND AMORPHOUS SILICON
G.D. Cody
STRUCTURAL IMPLICATIONS FOR OPTIMIZING a-SiGe:H ALLOYS
121
M.B. Schubert, K. Eberhardt and G.H. Bauer
HYDROGEN BONDING IN a-Si:H PREPARED BY REMOTE HYDROGEN
127
PLASMA DEPOSITION
S.E. Ready, J.B. Boyce,
N.M.
Johnson, J. Walker and K.S. Stevens
HYDROGEN INCORPORATION IN a-Si:H: TEMPERATURE AND
133
DOPING TYPE DEPENDENCE
M.J.M. Pruppers, K.M.H. Maessen, F.H.P.M.
Habraken,
J.
Bezemer and W.F. Van
der Weg
DEEP LEVELS AND HYDROGEN EVOLUTION IN HYDROGENATED
139
AMORPHOUS SILICON
S.
Zafar
and E.A.
Schiff
PROBING THE DENSITIES OF GAP STATES IN INTRINSIC a-Si:H
145
USING SPACE CHARGE LIMITED CURRENTS OF ELECTRONS
AND HOLES
R.M. Dawson, J.H. Smith and C.R.
Wroński
HOPPING OF ELECTRONS IN HYBRID BAND TAILS OF a-Sij xGex:H
151
CE.
Nebel,
H.C.
Weller and G.H Bauer
BAND TAILS AND THERMAL DISORDER IN DOPED AND UNDOPED
157
HYDROGENATED AMORPHOUS SILICON AND SILICON-
GERMANIUM ALLOYS
S. Aljishi,
J.Đ.
Cohen, S. Jin and L. Ley
DENSITY OF STATES OF AMORPHOUS GERMANIUM THIN FILMS
163
DEPOSITED BY THE PECVD OF H^-DILUTED GERMANE
С
Godet,
V.
Chu,
В.
Equer, Y. Bouizem, L. Chahed,
I.
El Zawawi,
MX. Theye, S. Basrour, J.C. Bruyère and J.P. Stoquert
DETERMINATION
OF a-Si:H FILM QUALITY THROUGH
FST AND
169
SCLC TECHNIQUES
R.
Martins,
M.
Vieira,
E. Fortunato,
I.
Ferreira,
F.
Soares
and
L.
Guimarães
THE ROLE OF THE SPECIES FORMED IN PECVD SYSTEMS ON
175
THE DENSITY OF STATES OF a-Si:H FILMS
R. Martins, L.
Rodrigues,
M.
Vieira,
E. Fortunato,
M.
Santos,
E.
Dirani,
N.
Carvalho,
I.
Baia
and
L.
Guimarães
CATHODOLUMINESCENCE OF DIAMOND-LIKE AND HYDROGENATED
181
AMORPHOUS SILICON CARBIDE MATERIALS
F. Alvarez, R.R. Koropecki, F.
Fajardo, H.L.
Fragnito and
P.V. Santos
PART III; ELECTRONIC DENSITY OF STATES: INTERFACES
THE INFLUENCE OF INTERFACES ON THE GAP STATE
189
DISTRIBUTION OF UNDOPED a-Si:H
G. Schumm and G.H. Bauer
THERMAL EQUILIBRATION BETWEEN BAND TAIL AND NEAR
195
SURFACE DEFECT STATES IN HYDROGENATED AMORPHOUS
SILICON AND SILICON-GERMANIUM ALLOYS
S. Aljishi, S. Jin, L. Ley and S. Wagner
STRUCTURE OF a-Si:H/SnO2 INTERFACE CHARACTERIZED BY XPS
201
H. Koinuma, M.
Nakano
and S. Gonda
PHOTOTHERMAL
INVESTIGATION OF SURFACES AND INTERFACES
207
IN AMORPHOUS SILICON FILMS
G.
Amato,
L. Boarino, G.
Benedetto and R.
Spagnolo
ANALYSIS OF THE AMORPHOUS SILICON CARBIDE/CRYSTALLINE
213
SILICON INTERFACE
M.M. Rahman, T. Harjono, K.H.
Lui,
F.E.
Pagaduan,
H.
Inokawa,
C.Y. Yang and D. Sugiarto
EFFECTS OF INTERFACES ON THE a-Si:H SCHOTTK
Y
BARRIER
219
CHARACTERISTICS
Y.M. Li,
С
Malone, S. Kumar, C.R.
Wroński,
H.V. Nguyen and
R.W. Collins
INTERFACE ROUGHNESS AND X-RAY REFLECTIVITY OF
225
AMORPHOUS SEMICONDUCTOR MULTILAYERS
P.D.
Persans,
A.F.
Ruppe«,
V.
Pantojas, K.
Liang,
G. Hughes
and B.
Abeles
OPTICAL CHARACTERIZATION OF INTERFACE, SURFACE AND
231
BULK DEFECTS IN a-Si.H
P.D.
Persans,
D.
Arnzen and G. Possin
HIGH QUALITY INTERFACES IN
а-ЅШ/а-ЅЈС.Н
SUPERLATTICES
237
N.
Bernhard,
M. Kirsch,
R.
Eigenschenk,
M. Bollu,
С.
Wetzel,
F. MüHer and R. Schwarz
STRONG
THICKNESS DEPENDENCE OF PHOTOELECTRONIC
243
PROPERTIES IN HYDROGENATED AMORPHOUS SILICON
L. Yang, I. Balberg,
A. Catalano
and M. Bennett
vii
PART IV: ELECTRONIC DENSITY OF STATES: THEORY
*
MOLECULAR DYNAMICS SIMULATIONS OF THE STRUCTURAL,
251
VIBRATIONAL AND ELECTRONIC PROPERTIES OF AMORPHOUS
SILICON
R. Biswas, I. Kwon and CM. Soukoulis
*
DEFECT THERMODYNAMICS, INHOMOGENEITY, AND THE DENSITY
261
OF GAP STATES IN HYDROGENATED AMORPHOUS SILICON
H.M. Branz and M. Silver
SATURATION OF METASTABLE-DEFECT DENSITY IN
а-ЅШ
273
D.
Redfield and R.H.
Bube
ELECTRONIC STATES IN THE GAP OF
а
-Si
FROM BOND ANGLE
279
VARIATIONS
B.N. Davidson and G. Lucovsky
A COMPREHENSIVE DEFECT MODEL FOR AMORPHOUS SILICON
285
N.
Hata, E.
Larson, J.Z. Liu, Y. Okada, H.R. Park and S. Wagner
PART V: TRANSPORT PROPERTIES
THE FIRST FIFTY BILLION NANOSECONDS OF ELECTRON
293
PHOTOCARRIER
EVOLUTION IN UNDOPED a-Si:H
H. Antoniadis and E.A.
Schiff
A GENERAL ANALYSIS OF STEADY STATE
PHOTOCARRIER
299
GRATING TECHNIQUE FOR THE DETERMINATION OF AMBIPOLAR
DIFFUSION LENGTH
Y.-M. Li
EXPERIMENTAL DETERMINATION FOR THE TRANSITION
305
TEMPERATURE BETWEEN BALLISTIC AND HOPPING
CONTROLLED RECOMBINATION IN a-Si:H
M.E. Zvanut, K. Wang, D. Han and M. Silver
STUDY OF BAND TAILS IN a-SiGe:H ALLOYS FROM TIME OF
311
FLIGHT AND THERMALLY STIMULATED CURRENT EXPERIMENTS
С
Longeaud, J.P.
Kleider,
D.
Menearaglia,
T. Mohammed-Brahim
and A. Rahal
THE INFLUENCE OF TUNNELING TRANSITIONS ON
317
RECOMBINATION AND PHOTOCONDUCTIVITY OF a-Si:H
B. Cieve
and P. Thomas
SPACE CHARGE PROFILES IN THICK AMORPHOUS SILICON
323
DIODES
R.E. HoUingswortn, J.
Xi
and R. Buitrago
EFFECT OF THE DEPLETION REGION OF a-Si:H SCHOTTKY
329
DIODES ON THE TIME-OF-FLIGHT MOBILITY-LIFETIME PRODUCT
N.
Wyrsch, P.
Roca
і
Cabarrocas,
S.
Wagner and V. Viret
*Invited Paper
viii
STUDIES ON CARRIER TRANSPORT
THROUGH
а-ЅШ
/a-Sij
ХСХ:Н
335
QUANTUM
WELL STRUCTURES IMBEDDED IN THE
і
LAYER OF A
p-i-n STRUCTURE
Y.L. Jiang, H.L. Hwang and M.S. Feng
PHOTOINDUCED NOISE IN AMORPHOUS SEMICONDUCTOR FILMS
341
F. Demichelis,
CF.
Pirri and
A. Tagliaferro
OBSERVATION OF QUANTIZED BALLISTIC TRANSPORT IN
347
AMORPHOUS SILICON MEMORY STRUCTURES
J. Hajto, M.J. Rose, P.G. LeComber, A.E. Owen and A.J. Snell
PART VI: CHARACTERIZATION AND STABILITY OF TFT S
PROXIMITY RECOVERY LAYERS TO SPEED UP THE RECOVERY
355
OF STRESSED AMORPHOUS SILICON THIN-FILM TRANSISTORS
M. Hack, W.B. Jackson and R.
Lujan
EFFECT OF BIAS ON RECOVERY RATES OF STRESSED AMORPHOUS
361
SILICON MIS STRUCTURES
W.B. Jackson and M. Hack
THERMAL-CVD PRODUCED AMORPHOUS-SILICON THIN-FILM
367
TRANSISTORS—AMBIPOLAR CHARACTERISTICS
H. Kanoh, O. Sugiura,
P.A.
Breddels
and M. Matsumura
a-Si:H THIN FILM TRANSISTORS AND LOGIC CIRCUITS FABRICATED
373
IN AN INTEGRATED MULTICHAMBER SYSTEM
S.S.
Kim,
С
Wang, G.N. Parsons and G. Lucovsky
EFFECT OF RESIDUAL PHOSPHORUS ON AMORPHOUS SILICON
379
THIN FILM TRANSISTORS
H. Tsutsu, T. Kawamura and Y. Miyata
THRESHOLD VOLTAGE SHIFTS IN AMORPHOUS SILICON THIN
385
FILM TRANSISTORS UNDER BIAS STRESS
T. Ogawa, S. Hotta and H. Takezawa
PART VH: NOVEL DEVICE APPLICATIONS
MEASUREMENTS OF 1/f NOISE IN a-Si:H PIN DIODES AND THIN-
393
FILM-TRANSISTORS
G. Cho, J.S. Drewery, I. Fujieda, T. Jing, S.N. Kaplan,
V. Perez-Mendez, S. Qureshi, D. Wildermuth and R.A. Street
FIELD PROFILE TAILORING IN
a
-ЅШ
RADIATION DETECTORS
399
I. Fujieda, G. Cho, J. Drewery, T. Jing, S.N. Kaplan,
V. Perez-Mendez, S. Qureshi, D. Wildermuth and R.A. Street
THE PROGRAMMABILITY OF AMORPHOUS SILICON ANALOGUE
405
MEMORY ELEMENTS
¡. Hajto, M.J. Rose,
Á.J.
Snell, P.G. LeComber and A.E. Owen
PART VITT:
OPTICAL DEVICES
*
FULL-CONTACT TYPE LINEAR IMAGE SENSOR BY AMORPHOUS
4 ! 3
SILICON
M.
Hayase
and H.
Arita
THE ROLE OF CARBON IN AMORPHOUS SILICON NIP PHOTO-
423
DIODE SENSORS
R.L Weisfield and C.C. Tsai
EFFECTS OF BUFFER LAYERS ON PERFORMANCE OF AMORPHOUS
429
SILICON IMAGE SENSORS
S. Miyagaki, S. Ri and K. Takasaki
PEAK-TO-PEAK VOLTAGE (V
)
ON Rf POWERED-ELECTRODE
435
AND SENSITIVITY OF AMORPHOUS SILICON
(а
-Si)
PHOTORECEPTOR
T. Yamazaki,
N.
Kobayashi, S. Takahashi and T. Nakanishi
*
AMORPHOUS SILICON SENSOR ARRAYS FOR RADIATION IMAGING
441
R.A. Street, S. Nelson, L. Antonuk and V. Perez-Mendez
TUNNELING ASSISTED PHOTOCURRENT MULTIPLICATION IN
453
а
-Si
BASED p-i/SiN^i-n STRUCTURE JUNCTION
M. Yoshirai, K. Hattori, H. Okamoto and Y. Hamakawa
THIN-FILM AMORPHOUS SILICON DYNODES FOR ELECTRON
459
MULTIPLICATION
G.W. Tasker, J.R
Horton
and J.J. Fijol
COMPENSATING FOR LIGHT SOAKING EFFECTS IN OPTICALLY
467
ADDRESSED SPATIAL LIGHT MODULATORS INCORPORATING
a-SkH
PHOTODIODES
CM. Walker,
В.
Landreth and
G. Moddel
PART IX: GROWTH
GROWTH OF AMORPHOUS, MICROCRYSTALLINE, AND EPITAXIAL
475
SILICON IN LOW TEMPERATURE PLASMA DEPOSITION
C.C. Tsai, G.B. Anderson and R. Thompson
NUCLEATION AND GROWTH IN VICINITY OF GROWING SURFACE
481
IN MAKING MICROCRYSTALLINE SILICON
M.
Nakata,
T.
Namikawa,
H.
Shirai, J.-I.
Hanna
and I. Shimizu
NEW DOPING TECHNIQUE FOR GETTING HIGHLY CONDUCTIVE
487
p
-ΤΥΡΕ
HYDROGENATED AMORPHOUS Si AND SiC ALLOYS
Y. Takeuchi, K. Nomoto, G. Ganguly and A. Matsuda
OPTIMIZATION OF THE PROPERTIES OF UNDOPED a-Ge:H
493
W.A. Turner, D. Pang, A.E. Wetsel, S.J. Jones, W. Paul and J.H. Chen
PROPERTIES OF CATALYTIC-CVD AMORPHOUS SILICON-
499
GERMANIUM (a-SiGe:H)
H. Mateumura, M. Yamaguchi and K. Morigaki
Invited Paper
a-Si:H DEPOSITED BY DIRECT PHOTO-CVD USING A MICROWAVE-
505
EXCITED Xe LAMP
H. Matsunami, T. Shirafuji, T. Fuyuki and M. Yoshimoto
FABRICATION OF DEVICE-QUALITY WIDE-GAP a-Si:H FILMS
511
AT VERY LOW SUBSTRATE TEMPERATURES
Y. Hishikawa, S. Tsuge,
N.
Nakamura, S. Tsuda, S.
Nakano,
M.
Ohnishi and
Y. Kuwano
REDUCTION OF
Si
-Н,
BOND CONTENT IN HYDROGENATED
517
AMORPHOUS SILICON PREPARED BY MERCURY-SENSITIZED
PHOTOCHEMICAL VAPOR DEPOSITION
N.
Sakuma, H. Nozaki, T. Niiyama and H.
Ito
BCCHjjJj
AS
Ρ
LAYER DOPING GAS
523
D.S.
Shen, H. Chatham and R.E.I. Schropp
NMR AND ESR STUDIES OF THE STRUCTURAL DEFECTS OF
529
AMORPHOUS AND MICROCRYSTALLINE SiC PREPARED BY THE
POLYMER ROUTE
S.-J. Ting, C.-J.
Chu
and J.D. Mackenzie
џс
SILICON THIN FILMS DEPOSITED BY REMOTE PLASMA ENHANCED
535
CHEMICAL VAPOR DEPOSITION PROCESS
C. Wang, G.N. Parsons,
S.S.
Kim, E.C. Buehler, R.J.
Nemanich
and
G. Lucovsky
ETCHING SELECTIVITY OF SiF4 AND
Щ
PLASMAS FOR c-Si,
54
1
a-Si:H AND SiO,
Y. Okada and S. Wagner
COMPARISON OF THE PROPERTIES OF SPUTTERED AND GLOW
547
DISCHARGE a-Ge:H FILMS
A.E. Wetsel,
S.S.
Jones, W.A. Turner, D. Pang, W. Paul,
I. El Zawawi, Y. Bouizem, K. Chahed, M.L. Theye, F.C. Marques
and I. Chambouleyron
THE EFFECT OF SAMPLE SUBSTRATE ON THE STRUCTURAL
553
PROPERTIES OF CO-DEPOSITED FILMS OF a-Ge:H
S.J. Jones, W.A. Turner, D. Pang and W. Paul
DIRECT a-Si:H PHOTO-CVD DEPOSITION WITH THE EXCIMER
559
SPECTRA OF A DIELECTRIC-BARRIER DISCHARGE LAMP
F. Kessler,
H.-D. Mohring and G.H. Bauer
DEPOSITION OF a-Ge:H IN A REMOTE PLASMA SYSTEM
565
M. Heintze,
C.E. Nebel
and G.H. Bauer
OPTIMIZATION OF a-Ge:H FILMS
571
K. Eberhardt, M.B. Schubert, A. Eicke and G.H. Bauer
HYDROGENATED SILICON FILMS PREPARED BY REMOTE
577
PLASMA CVD
S.C. Kim, S.K. Lee, S.M.
Soe,
S.O.
Koh,
S.S. Ihm,
J.M.
Jun,
T.G.
Kim,
M.H.
Chung,
K.H. Lee, H.K. Song,
J.
Jang, J.T. Hwang and K.S. Chung
HYDROGEN INCORPORATION IN AMORPHOUS SILICON PREPARED
583
AT HIGH DEPOSITION RATES BY THE VHF-GD TECHNIQUE
F. Finger, V. Viret, A. Shah, X.-M. Tang, J. Weber and W. Beyer
THE INFLUENCE OF DEPOSITION CONDITIONS ON THE PROPERTIES
589
OF a-SiCH THIN FILMS
L. Magafas, D. Girginoudi,
N.
Georgoulas and A. Thanailakis
ENERGY RESOLVED MASS SPECTROMETRY OF THE a-Si:D FILM
595
GROWTH SPECIES DURING DC MAGNETRON SPUTTERING
A.M. Myers,
D.N. Ruzie,
N.
Maley, J.R. Doyle and J.R. Abelson
THE LOW-TEMPERATURE METAL-ORGANIC CHEMICAL VAPOR
601
DEPOSITION (LTMOCVD) ROUTE TO AMORPHOUS SILICON
SEMICONDUCTORS
A.E. Kaloyeros, J.W. Corbett, P.J.
Toscano
and R.B. Rizk
PART X: CHARACTERIZATION
MEASUREMENTS OF THE TRANSIENT PHOTOCONDUCTIVITY
609
DURING THE GROWTH OF a-Si:H MULTILAYERS
H.C. Neitzert, A. Werner, W.
Hirsch
and M.
Kunst
ANNEALING OF DEFECTS DURING THE DEPOSITION OF AMORPHOUS
615
SILICON
N.
Hata,
P.
Roca i Cabarrocas,
N.
Wyrsch, S. Wagner and M. Favre
REDUCTION OF INTERNAL STRESS OF a-Si:H FILMS BY IN SITU
621
MEASUREMENTS OF OPTICAL EMISSION INTENSITY FROM SiH4
PLASMA
K. Tamahashi, M. Wakagi, F. Ishikawa, T. Kaneko, K. Tamura,
A. Satoh and M. Hanazono
CHARACTERIZATION OF a-Si:H,Cl AND a-SiC:H FILMS PREPARED
627
BY ELECTRON CYCLOTRON RESONANCE PLASMA
S. Gangopadhyay, T.
Trost,
M.
Kristiansen,
С.
Young, P. Zheng,
С
Pakule
and
M. Pleil
A NEW GENERAL METHOD FOR THE DETERMINATION OF OPTICAL
633
PROPERTIES OF AMORPHOUS SILICON FILMS
G.
Amato,
L.
Boarino,
F.
Fizzotti and
С
Manfredotti
OPTICAL STUDIES OF
MICROSTRUCTURE
IN a-Si:H
639
M.
Vaněček,
D.
Červinka,
M. Favre, H. Curtins and A.V. Shah
HYDROGEN
DILUTION
OF SILANE:
CORRELATION
BETWEEN
645
THE STRUCTURE
AND OPTICAL BAND
GAP IN
GD a-Si:H
FILMS
H.
Meiling,
MJ.
Van
den Boogaard,
R.E.I. Schropp, J. Bezemer
and W.F. Van
der Weg
THE INFLUENCE OF DOPING ON THE ELECTRONIC PROPERTIES
651
OF HYDROGENATED AMORPHOUS SILICON
D.
Herm,
H.
Wetzel and M.
Kunst
HYDROGEN BONDING, AND MICROVOIDS IN a-Si:H: A PROTON
657
NMR STUDY
M. Zheng, E.J. VanderHeiden,
P.C.
Taylor, R. Shinar, S.
Mitra
and
J. Shinar
SYSTEMATIC ERRORS IN THE ANALYSIS OF THE INFRARED
663
TRANSMISSION DATA OF HYDROGENATED AMORPHOUS SILICON
N.
Maley and I. Szafranek
xii
TRANSMISSION ELECTRON
MICROSCOPY OF EXCIMER LASER
669
CRYSTALLIZED AMORPHOUS Si THIN FILMS
G.B. Anderson, R.Z. Bachrach, K. Winer, J.B. Boyce, F.A. Ponce,
R.I. Johnson and S.E. Ready
PART XI: STABILITY
*
LONG RANGE HYDROGEN MOTION, EVOLUTION, AND BONDING
677
IN
a-SŁH
AND a-Ge:H
R. Shinar, X.-L. Wu, S.
Mitra
and J. Shinar
HYDROGEN STABILITY IN HYDROGENATED AMORPHOUS
689
GERMANIUM
W. Beyer, J. Herion, H. Wagner and U. Zastrow
THERMALLY-INDUCED CHANGE OF CONDUCTIVITY AND
695
DEFECT DENSITY IN AMORPHOUS SILICON-GERMANIUM
ALLOYS
T. Shimizu, X. Xu, H. Sasaki, H. Yan, A. Morimoto and M. Kumeda
EFFECT OF THERMAL EQUILIBRATION ON DARK- AND PHOTO-
701
CONDUCTIVITIES IN UNDOPED AMORPHOUS SILICON-
GERMANIUM ALLOYS
J.Z. Liu,
D.S.
Shen, P.
Roca
і
Cabarrocas,
H.
Park and S. Wagner
CAPACITANCE STUDIES OF METASTABLE STATES IN LIGHT-
707
SOAKED, QUENCH-COOLED, AND BIAS-ANNEALED n-TYPE
HYDROGENATED AMORPHOUS SILICON
T.M. Leen,
J.D. Cohen and A.V. Gelatos
A NEW TECHNIQUE FOR DETERMINING MIDGAP STATES AND
713
HOLE LOCALIZATION IN a-Si:H DEVICES
V.L.
Dalai and R.D. Knox
TRACE IMPURITIES AND METASTABLE STATES IN a-Si:H
719
T. Unold and J.D. Cohen
LIGHT-INDUCED ELECTRON SPIN RESONANCE IN GATE-QUALITY
725
NITROGEN-RICH AMORPHOUS SILICON NITRIDE: PHOTO-
PRODUCTION AND PHOTO-BLEACHING
E.D. Tober, M.S. Crowder and J. Kanicki
THE GENERATION AND BLEACHING OF POSITIVE CHARGE IN
731
GATE-QUALITY NITROGEN-RICH AMORPHOUS SILICON NITRIDE
BY SUB-BANDGAP ILLUMINATION
J. Kanicki and M. Sankaran
HYDROGEN DIFFUSION IN a-SJC:H
739
F. Demichelis, C.F. Pirri, E. Tresso, G.
Amato
and G. Delia
Mea
DOES ION BOMBARDMENT INDUCE A DEGRADATION OF THE
745
ELECTRONIC PROPERTIES OF
а-ЅШ
FILMS?
P.
Roca i
Cabarrocas, P. Morin, J.
Conde,
V.
Chu, J.Z.
Liu,
H.R. Park and S. Wagner
Invited Paper
xiii
SATURATION
BEHAVIOR OF THE LIGHT-INDUCED DEFECT
751
DENSITY IN HYDROGENATED AMORPHOUS SILICON
H.R. Park, J.Z. Liu, P.
Roca i
Cabarrocas, A. Maruyama, M. Isomura,
S. Wagner, J.R. Abelson and F. Finger
STUDY OF TEMPERATURE AND LIGHT BIAS EFFECTS ON THE
757
OCCUPIED NEAR SURFACE DEFECT DENSITY IN HYDROGENATED
AMORPHOUS SILICON
S. Aljishi, J.D. Cohen and L. Ley
RECOMBINATION AT DANGLING-BONDS AND FERMI LEVEL
763
EFFECTS ON STEADY-STATE PHOTOCONDUCTIVITY AND
LIGHT-INDUCED ESR IN a-Si:H
E,
Morgado
LIGHT-INDUCED METASTABLE EFFECTS IN a-Ge:H
769
P.V. Santos,
CF. de
О.
Graeff,
G.
Marcano
and I. Chambouleyron
ANNEALING OF IRREVERSIBLE DEFECTS IN HYDROGENATED
775
AND UNHYDROGENATED AMORPHOUS SILICON THIN FILMS
G.N. Parsons,
С
Wang and G. Lucovsky
ELECTRON TRAPPING IN AMORPHOUS SILICON
-
A QUANTUM
781
MOLECULAR DYNAMICS STUDY
L.H. Yang, R.K.
Kalia
and P. Vashishta
AUTHOR INDEX
787
SUBJECT INDEX
791
MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDING
797
xiv
787
Author Index
Abdulaziz, S.,
63
Abeles,
В.,
225
Abelson, J.R.,
595, 751
Aljishi,
S.,
157, 195, 757
Alvarez,
F., 181
Amato,
G.,
207, 633, 739
Anderson, G.B., 475, 669
Antoniadis,
H.,
293
Antonuk, L.,
441
Arita,
H.,
413
Amzen, D.,
231
Bachrach, R.Z.,
669
Baía,
I.,
175
Balberg, I.,
39, 243
Banerjee,
Α.,
57
Basrour,
S.,
163
Bauer, G.H.,
121, 151, 189, 559, 565,
571
Benedetto,
G.,
207
Bennett, M.S.,
45, 243
Bernhard, N.,
237
Berry, W.B.,
51
Beyer,
W.,
583, 689
Bezemer,
J.,
133, 645
Biswas,
R.,
251
Boarino,
L.,
207, 633
Bollu, M.,
237
Bouizem,
У.,
163, 547
Boyce, J.B.,
127, 669
Branż, H.M.,
261
Breddels,
P.A., 367
Brown, W.D.,
75
Bruyère, J.C,
163
Bube, R.H., 273
Buehler, E.C.,
535
Buitrago,
R.,
323
Carius,
R.,
101
Carvalho,
N.,
175
Catalano,
Α.,
243
Červinka, D.,
639
Chahed, L.,
163, 547
Chambouîeyron,
I.,
547, 769
Chatham,
H.,
523
Chen,
S.U., 493
Cho, G.,
393, 399
Chu,
C.-.Í.,
529
Chu,
V.,
163, 745
Chung, K.S.,
577
Chung, M.H.,
577
Cieve,
В.,
317
Cody, CD.,
113
Cohen, J.D.,
157, 707, 719, 757
Collins, R.W.,
219
Conde, J.,
745
Corbett, J.W.,
601
Crowder, M.S.,
725
Curtins,
H.,
639
Dalai,
V.L., 713
Davidson, B.N.,
279
Dawson, R.M.,
145
Delia
Mea,
G.,
739
Demichelis,
F., 341, 739
de O. Graeff
,
CF.,
769
Dirani,
E.,
175
Doyle, J.R., 595
Drewery, J.S., 393, 399
Eberhardt,
К.,
121, 571
Eicke,
Α.,
571
Eigenschenk, R-, 237
El Zawawi,
I.,
163, 547
Equer,
В.,
163
Fajardo,
F., 181
Favre, M., 615, 639
Feng, M.S.,
335
Ferreira,
1., 169
Fijol, J.J.,
459
Finger, F., 583, 751
Fizzotti, F., 633
Fortmann,
СМ.,
27
Fortunato,
E.,
169, 175
Fragnito, H.L., 181
Fuhs,
W.,
95
Fujieda, I.,
393, 399
Fuyuki,
T.,
505
Gangopadhyay,
S.,
627
Ganguly,
G.,
487
Gelatos, A.V.,
707
Georgoulas, N.,
589
Girginoudi, D.,
589
Godet,
С,
163
Goh, F.H.C.,
75
Gonda,
S.,
201
Gom,
M.,
81
Gotoh, Y.,
69
Gu,
S.,
107
Guha,
S.,
57
Guimarães, L.,
169, 175
Habraken, F.H.P.M.,
133
Hack,
M.,
355, 361
Hahn, M.J., 51
Hajto, J.,
347, 405
Hamakawa,
Y.,
453
Han,
D.,
305
Hanazono,
M.,
621
Hanna, J.-I.,
481
788
Harjono, T.,
213
Hata,
Ν.,
285, 615
Hattori,
К.,
453
Hayase,
M.,
413
He mtze,
M.,
565
Heller, D.,
89
Herion, J.,
689
Herm,
D.,
651
Hermann,
A.M.,
75
Hirsch, W., 609
Hishikawa,
Y.,
3,511
Hûllingsworth, R.E.,
323
Horton, J.R.,
459
Hotta, S.,
385
Hughes, G.,
225
Hwang, H.L.,
335
Hwang,
J.T.,
577
Ihm, S.S., 577
Inokawa, H.,
213
Inoue,
У.,
15
Ishikawa,
F., 621
Isomura,
M.,
751
Ito,
H.,
517
Itoti,
H.,
15
Itoh.M.,
15
Jackson, W.B.,
355, 361
Jang, J.,
577
Jiang, Y.L.,
335
Jin,
S.,
157, 195
Jing.T.,
393, 399
Johnson,
N.M., 127
Johnson, R.I.,
669
Jones, S.J.,
493, 547, 553
Jun, J.M.,
577
Kalia, R.V., 7S1
Kaloyeros, A.E.,
601
Kaneko,
T.,
621
Kamcki.J.,
725, 731
Kanoh, H.,
367
Kaplán, S.N.,
393, 399
Kawamum, T.,
379
Kessler, F., 559
Kim, S.C,
577
Kim,
S.S., 373, 535
Kim T.G.,
577
Kirsch, M.,
237
Kleider, J.P., 311
Kniffter,
N.,
81
Knox, R.D., 713
Kobayashi,
N.,
435
Koh, S.O., 577
Koinuma, H.,
201
Komakine, M.,
69
Kondo, K.,
69
ICoropecki, R.R.,
181
Kristiaiisen, M.,
627
Каш,
S.,
219
Kumeda, M.,
695
Kunst,
M.,
609, 651
Kuwano, Y.,
3, 511
Kwon, I.,
251
Landreth,
В.,
467
Larson,
E.,
285
Lechner, P.,
81
LeComber, P.G., 347, 405
Lee, K.H.,
577
Lee,
S.,
89
Lee, S.K.,
577
Leen,
T.M.,
707
Ley,
L.,
157, 195, 757
Li,
Y.,
63
Li, Y.M.,
219
Li, Yuan-Min,
299
Liang,
К.,
225
Liu,
S.Z., 285,701, 745, 751
Longeaud,
С,
311
Lucovsky,
G.,
279, 373, 535, 775
Lui, K..H.,
213
Lujan, R.,
355
Mackenzie, J.D.,
529
Maessen, K.M.H.,
133
Magafas,
L.,
589
Maley,
N.. 595, 663
Malone,
С,
219
Manfredotti,
С,
633
Marcano,
G.,
769
Marques, F.C.,
547
Martins,
R.,
169, 175
Maruyama,
Α.,
751
Matsuda,
Α.,
487
Matsumura, H.,
499
Matsumura, M.,
367
Matsunami, H.,
505
Meiling, H.,
645
Mell,
H.,
95
Mencaraglia, D.,
311
Mitra, S.,
657, 677
Miyagaki, S.,
429
Miyata, Y.,
379
Moddel, G.,
467
Mohammed-Brahim, T.,
311
Mohring, H.-D.,
559
Morgado,
E.,
763
Morigaki,
К.,
499
Morimoto,
Α.,
695
Morin, P.,
745
Moriuchi, S.,
15
Mrig, L.,
51
Muller,
F., 237
Myers, A.M.,
595
Nakamura,
N.,
511
Nakanishi,
T.,
435
Nakano,
M.,
201
Nakano,
S.,
511
789
Nakata,
M.,
481
Nakata,
Y.,
15
Namikawa,
T.,
481
Naseem., H.A., 75
Nebel,
CE.,
151, 565
Neitzert, H.C., 609
Nemanich, R.J., 535
Nelson, S., 441
Ng, K., 75
Nguyen, H.V.,
219
Niiyama, T.,
517
Nishimura, H., 69
Nomoto, K., 487
Nozaki, H., 517
Ogawa,
T.,
385
Ohnishi,
M.,
3, 511
Okada,
Y.,
285, 541
Okamoto, H., 453
Owen, A.E., 347, 405
Pagaduan, F.E., 213
Palsule, C, 627
Pang, D.,
493, 547, 553
Pantojas, V.,
225
Park, H.R.,
285, 701, 745, 751
Parsons, G.N.,
373, 535, 775
Paul,
W.,
493, 547, 553
Payson, J.S.,
63
Perez-Mendez,
V.,
393, 399, 441
Persans,
P.D., 225, 231
Pierz,
К.,
95
Pîrri, CF.,
341, 739
Pleił,
M.,
627
Ponce, F.A.,
669
Possin, G.E., 231
Wrappers,
MIM.,
133
Qureshi,
S.,
393, 399
Ranal,
Α.,
311
Rahman, M.M.,
213
Ready, S.E.,
127, 669
Redfield, D.,
273
Ri, S.,
429
Rizk, R.B.,
601
Roca i Cabarrocas,
P.,
329, 615, 701,
745, 75
J
Rodrigues, L.,
175
Rose,
MJ.,
347, 405
Rubel,
H.,
81
Ruppert, A.F., 225
Ruzie, 0.N.,
595
Sakuma,
N.,
517
Saokaran, M.,
731
Sannomiya, H.,
15
Santos,
M.,
175
Santos,
P.
V.,
181,769
Sasaki,
H.,
695
Sato,
К.,
69
Satoh,
Α.,
621
Scheppat,
В.,
81
Schiff, E.A., 139, 293
Schropp, R.E.I.,
523, 645
Schubert, M.B., 121, 571
Schumm,
G.,
189
Schwarz,
R.,
237
Shah,
Α.,
583, 639
Shen,
D.S., 523, 701
Shimizu,
I.,
481
Shimizu,
T.,
695
Shinar,
J.,
657, 677
Shinar,
R.,
657, 677
Shirafuji,
T.,
505
Shirai,
H.,
481
Silver,
M.,
261, 305
Skibo,
S.,
39
Smith, J.H.,
145
Snell, A.J.,
347, 405
Soares,
F., 169
Soe, S.M.,
577
Song, H.K., 577
Soukoulis,
СМ.,
251
Spagnolo, R.,
207
Stevens, K.S., 127
Stoquert, J.P.,
163
Street, R.A., 393, 399, 441
Sugiarto,
D.,
213
Sugiura,
О.,
367
Szafranek, I.,
663
Tagliaferro,
Α.,
341
Takahashi,
S.,
435
Takasaki, K.,
429
Takeuchi,
Y.,
487
Takezawa,
H.,
385
Tamahashi,
К.,
621
Tamura,
К.,
621
Tan, S.M.,
75
Tang,
X.-M.,
583
Tasker,
G.W.,
459
Taylor,
P.C., 107, 657
Thanailakis,
Α.,
589
Theye, MX., 163, 547
Thomas,
P.,
317
Thompson, R., 475
Ting,
S.-J.,
529
Tober, E.D., 725
Toscano, P.J.,
601
Tresso,
E.,
739
Trost,
T.,
627
Tsai, CC,
423, 475
Tsuda, S.,
511
Tsuge,
S.,
511
Tsutsu,
H.,
379
Tu, J.C., 45
Turner, W.A., 493, 547, 553
Unold,
T.,
719
790
Van den
Boogaard,
M.J.,
645
VanderHeiden,
EJ.,
657
Van der Weg, W.F.. 133,645
VaníCek. M.,
639
Vashishta,
P.,
781
Vieira,
M.,
169, 175
Viret,
V.,
329, 583
Wagner,
R.,
689
Wagner,
S.,
195, 285, 329, 541, 615,
701,745,751
Waksgi,
M.,
621
Walker,
СМ.,
467
Walker,
J.,
127
Wang,
С,
373, 535,
77S
Wang,
К..,
305
Weber, J., 583
Weisfield, R.L., 423
Weller, H.C., 151
Werner,
Α.,
609
Wetsei, A.E., 493, 547
Wetzet, C, 237
Wetzet, H., 651
Wiidermuth, D., 393, 399
Winer,
К.,
669
Woodyard, J.R., 63
Wroński,
CR.,
89, 145, 2!9
Wu, X.-L., 677
Wyrsch, N.. 329, 615
Xi, J., 323
Xu,
X.,
695
Yamaguehi, M., 499
Yamazaki,
T.,
435
Yan, H., 695
Ytng, C.Y., 213
Yang, L.v 39, 243
Yang, L.H., 781
Yokom,
Α.,
»5
Yoshimi, M„ 453
Yoshimoto, M., 505
Young,
С,
627
Zafar,
S.,
139
Zastrow,
її.,
689
Zheng,
M.,
657
Zheng,
P.,
627
Zvanut, M.E.,
305
|
| any_adam_object | 1 |
| building | Verbundindex |
| bvnumber | BV005915405 |
| callnumber-first | T - Technology |
| callnumber-label | TK7871 |
| callnumber-raw | TK7871.99.A45 |
| callnumber-search | TK7871.99.A45 |
| callnumber-sort | TK 47871.99 A45 |
| callnumber-subject | TK - Electrical and Nuclear Engineering |
| classification_rvk | UD 8400 |
| classification_tum | PHY 690f ERG 940f ELT 299f |
| ctrlnum | (OCoLC)22184766 (DE-599)BVBBV005915405 |
| dewey-full | 621.3815/2 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.3815/2 |
| dewey-search | 621.3815/2 |
| dewey-sort | 3621.3815 12 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Energietechnik, Energiewirtschaft Physik Elektrotechnik Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Conference Proceeding Book |
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| genre | (DE-588)1071861417 Konferenzschrift 1990 San Francisco Calif. gnd-content |
| genre_facet | Konferenzschrift 1990 San Francisco Calif. |
| id | DE-604.BV005915405 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T16:36:48Z |
| institution | BVB |
| institution_GND | (DE-588)5076904-2 |
| isbn | 155899081X |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-003704151 |
| oclc_num | 22184766 |
| open_access_boolean | |
| owner | DE-91 DE-BY-TUM DE-83 DE-29T |
| owner_facet | DE-91 DE-BY-TUM DE-83 DE-29T |
| physical | XVI, 796 S. Ill., graph. Darst. |
| publishDate | 1990 |
| publishDateSearch | 1990 |
| publishDateSort | 1990 |
| publisher | Materials Research Soc. |
| record_format | marc |
| series | Materials Research Society: Materials Research Society symposia proceedings |
| series2 | Materials Research Society: Materials Research Society symposia proceedings |
| spelling | Amorphous silicon technology, 1990 symposium held April 17 - 20, 1990, San Francisco, California, U.S.A. eds.: P. C. Taylor ... Pittsburgh, Pa. Materials Research Soc. 1990 XVI, 796 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Materials Research Society: Materials Research Society symposia proceedings 192 Literaturangaben Amorphous semiconductors Congresses Silicon alloys Congresses Solar cells Materials Congresses Silicium (DE-588)4077445-4 gnd rswk-swf Halbleitertechnologie (DE-588)4158814-9 gnd rswk-swf Amorpher Zustand (DE-588)4306087-0 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 1990 San Francisco Calif. gnd-content Silicium (DE-588)4077445-4 s Amorpher Zustand (DE-588)4306087-0 s Halbleitertechnologie (DE-588)4158814-9 s DE-604 Taylor, Philip C. Sonstige oth Symposium on Amorphous Silicon Technology 1990 San Francisco, Calif. Sonstige (DE-588)5076904-2 oth Materials Research Society: Materials Research Society symposia proceedings 192 (DE-604)BV001899105 192 Digitalisierung TU Muenchen application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=003704151&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Amorphous silicon technology, 1990 symposium held April 17 - 20, 1990, San Francisco, California, U.S.A. Materials Research Society: Materials Research Society symposia proceedings Amorphous semiconductors Congresses Silicon alloys Congresses Solar cells Materials Congresses Silicium (DE-588)4077445-4 gnd Halbleitertechnologie (DE-588)4158814-9 gnd Amorpher Zustand (DE-588)4306087-0 gnd |
| subject_GND | (DE-588)4077445-4 (DE-588)4158814-9 (DE-588)4306087-0 (DE-588)1071861417 |
| title | Amorphous silicon technology, 1990 symposium held April 17 - 20, 1990, San Francisco, California, U.S.A. |
| title_auth | Amorphous silicon technology, 1990 symposium held April 17 - 20, 1990, San Francisco, California, U.S.A. |
| title_exact_search | Amorphous silicon technology, 1990 symposium held April 17 - 20, 1990, San Francisco, California, U.S.A. |
| title_full | Amorphous silicon technology, 1990 symposium held April 17 - 20, 1990, San Francisco, California, U.S.A. eds.: P. C. Taylor ... |
| title_fullStr | Amorphous silicon technology, 1990 symposium held April 17 - 20, 1990, San Francisco, California, U.S.A. eds.: P. C. Taylor ... |
| title_full_unstemmed | Amorphous silicon technology, 1990 symposium held April 17 - 20, 1990, San Francisco, California, U.S.A. eds.: P. C. Taylor ... |
| title_short | Amorphous silicon technology, 1990 |
| title_sort | amorphous silicon technology 1990 symposium held april 17 20 1990 san francisco california u s a |
| title_sub | symposium held April 17 - 20, 1990, San Francisco, California, U.S.A. |
| topic | Amorphous semiconductors Congresses Silicon alloys Congresses Solar cells Materials Congresses Silicium (DE-588)4077445-4 gnd Halbleitertechnologie (DE-588)4158814-9 gnd Amorpher Zustand (DE-588)4306087-0 gnd |
| topic_facet | Amorphous semiconductors Congresses Silicon alloys Congresses Solar cells Materials Congresses Silicium Halbleitertechnologie Amorpher Zustand Konferenzschrift 1990 San Francisco Calif. |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=003704151&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| volume_link | (DE-604)BV001899105 |
| work_keys_str_mv | AT taylorphilipc amorphoussilicontechnology1990symposiumheldapril17201990sanfranciscocaliforniausa AT symposiumonamorphoussilicontechnologysanfranciscocalif amorphoussilicontechnology1990symposiumheldapril17201990sanfranciscocaliforniausa |