Proceedings of the 1991 Bipolar Circuits and Technology Meeting: Minneapolis Marriott City Center Hotel September 9 - 10, 1991
Gespeichert in:
| Körperschaft: | |
|---|---|
| Format: | Tagungsbericht Buch |
| Sprache: | English |
| Veröffentlicht: |
New York, NY
Inst. of Electrical and Electronic Engineers
1991
|
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | Literaturangaben |
| Beschreibung: | 299 S. graph. Darst. |
| ISBN: | 078030103X 0780301048 0780301056 |
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| 245 | 1 | 0 | |a Proceedings of the 1991 Bipolar Circuits and Technology Meeting |b Minneapolis Marriott City Center Hotel September 9 - 10, 1991 |c ed. by Janice V. Jopke |
| 264 | 1 | |a New York, NY |b Inst. of Electrical and Electronic Engineers |c 1991 | |
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| 500 | |a Literaturangaben | ||
| 650 | 4 | |a Bipolar integrated circuits |v Congresses | |
| 650 | 4 | |a Bipolar transistors |v Congresses | |
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Datensatz im Suchindex
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| adam_text | TABLE
OF
CONTENTS
SESSION
I: HIGH-PERFORMANCE PROCESSES
MONDAY A.M. BALLROOM
3
Chairman: Bob
Lutze
(Brooktree)
Co-chairman: Doug Verret (Tl/Sematech)
1.1 (9:50-10:40
A.M.) Ultra-small High-speed Bipolar Transistor with Sidewall Suicide Technology p.
11
(Invited Tutorial): Tohru Nakamura. T. Onai,
N.
Homma, T. Shba and Y. Tamaki (Hitachi)
1.2 (10:40-11
:05 A.M.) Integration of a Double Polysilicon Fully Self-Aligned Bipolar Transistor into a p.
17
0.5
μτη
BiCMOS Technology for a Fast
4
Mbit SRAMS: J. Hayden, J. Burnett, A. Perera, T.
Mele,
F.
Walczyk,
V. Kaushik,
C.Lage,
and Y.-C. See (Motorola)
1.3 (11
:05-1
1
:30
A.M.)
MOSAIC V
-
A Very-High-Performance Bipolar Technology
:
V. dele Torre, p.
21
J. Foerstner, B.
Lojek,
К.
Sakamoto,
S.
Sundaram,
N. Tracht,
Β.
Vasquez and P. Zdebel (Motorola)
1.4 (11
:30-1
1
:55 A.M.) Modular Deep-Trench Isolation Scheme for
38
GHz Self-Aligned Double- p.
25
Polysilicon Bpolar Devices
:
E. Bertagnoffi, K. Ehinger, H.
Klose,
J. Weng and D.
Hartwig
(Siemens
AG)
SESSION II
:
High-Speed Circuits
MONDAY A.M. BALLROOM
4
Chairman: Robert Pease (National)
Co-chairman: Dan
Hopta
(DEC)
2.1 (9:50-10:15
A.M.) A Si Bipolar
23
Gbit/sec Multiplexer and A
15
GHz
2:1
Static Frequency Divider: p.
31
A.
Felder,
P.
Weger, E.
Bertagnolli, J.
Hauenschild
and H.-M. Rein (Siemens
AG, Technische
Universität Wien and
Ruhr-Univiversitåt
Bochum
2.2 (10:15-10:40
A.M.)
Mufti-Gbit/sec Silicon Bipolar
Multiplexer and Demultiplexer with Interleaved p.
35
Architectures: Kevin Negus (Avantek)
2.3 (10:40-11
:05 A.M.) A
4
Gs-sec Comparator Fabricated in an AlGaAs/GaAs Heterojunction Bipolar p.
39
Process: F. Cepl, P.
Baureis,
D.
Seitzer and P. ZwicknagI
(Fraunhofer-Institute
for Integrated
Circuits and Siemens
AG)
2.4 (11
:05-1
1
:30 A.M.) AlGaAs/GaAs HBTs: An Ultra Sensitive Decision Circuit for a
10
Gb/sec Optical p.
43
Communications System
:
K. Tsuda, J. Akagi, Y. Kuriyama, M. Asaka, K. Morizuka and M.
Obara
(Toshiba)
2.5 (1130-1155
A.M.) A Fully Monolithic GaAs/AIGaAs HBT
С
-Band
Transmitter
:
B. Maoz and
A. Oki
p.47
(Hittite
Microwave and TRW)
SESSION III
:
SOI AND HBT DEVICES
MONDAY
P.M.
BALLROOM
3
Chairman: C. R. Selvakurnar (Univ. of Waterloo)
Co-chairman:
Ali Iranmanesh
(National)
3.1 (1
:45-2:35 P.M.) Fully
SÌO2
Isolated Self-Aligned SGt-Bipoter Transistor for VLSI (Invited Tutorial) p.53
Hipotaka Nisnizawa
f
Httachfl
3.2 (2:35-3:00 P.M.)
A Novel Self-Aligned Epitaxial Base Transistor
:
H.
Fujimaki,
К.
Suzuki, p.
59
Y. Umemura and K. Akahane
(Oki
Electric)
З З
(3Ό0-325
P.M.) High-Speed Epitaxial-Base Transistor on Bonded SOI
:
M.
Kojima,
A. Fukuruda, p.
63
T. Fukano,
N.
Higaki, T. Yamazaki,
T. Sugï, Y.
Arimoto and T.
Ito
(Fujitsu)
3.4 (335-4:00
P.M.) Poiycrystaline Silicon Carbide (SiCarb) Emitter Bipolar Transistors
:
Z. Shafi, p.
67
I. Post, J. Whitehurst, P. Wensiey, P. Ashburn, P.B. Moynagh and G. Booker
(Southampton Univ., Oxford Univ., and STC Technology)
3.5 (4:00-4:25
P.M.) High-Speed Si Hetero-Bipolar Transistor with a SiC Wide-Gap Emitter and an p.
71
UKra-Thin Heavily Doped Ftotoepitaxially Grown Base
:
Y. Yamazaki, I. Namura, T. Sugii, H. Goto,
A. Tañara
and T. Ho (Fujitsu)
3.6 (4:25-4:50
P.M.) Ion-Implanted SK5e PNP Self-Aligned SEEW Transistors
:
D. Nguyen-Ngoc, p.
75
D. Harame, J.
Burghartz,
R.
Mclntoshm
E. Crabbé, J.
Warnock,
C.
Stante,
В.
Meyerson and
J.
Cotte (IBM)
3.7 (4:50-5:15
P.M.) An Implant-Free
45
GHz AIGaAs/GaAs HBT
1С
Technology Incorporating p.
79
1.4
THz Schottky Diodes
:
S.
Prasad,
В.
Vetanen,
С.
Hayned,
S.
Park, I. Beers, S. Diamond,
G. Pubanz, J.
Ebner,
S.
Sanietevtei
and
A. Ágoston (Tektronix)
SESSION IV
:
DEVICE MODELING
MONDAY P.M. FIFTH SEASON ROOM (6th floor)
Chairman: Don Pettengill (Hewlett-Packard)
Co-chairman: Huang J. Chen (Honeywell)
4.1 (1
:45-2:10 P.M.) Distributed High-Frequency Effects in Bipolar Transistors
:
M. Versleijen (Philips) p.
85
4.2 (2:10-2:35
P.M.) Predictive Modeling of Thermal Effects in BJTs
:
R. Fox and S.-G Lee (Univ. of FL) p.
89
4.3 (2:35-3:00
P.M.) The Modeling and Measurement of Lateral Bipolar Junction Transistors
:
H. Cho p.
93
and D.
Buric
(Univ. of FL)
4.4 (3:00-3:25
P.M.) A Device-Level Transient Analysis of a 1um Six-Transistor BiCMOS Inverter Circuit p.
97
Using a Large-Scale Quasi-3D Device Simulator
:
J. Kuo and Y. Chen (National Taiwan Univ.)
4.5 (3:35-425 P.M.)
TCAD for Bipolar Process Development: A Users Perspective (Invited Tutorial): p.101
P.
Vande
Voorde
(Hewlett-Packard)
4.6 (4:25-4:50
P.M.) Simulation and Assesment of Non-Quaisi-Static Current Crowding in Scaled p.
110
Bipolar Circute
:
J. Jin and J. Fossum (Univ. of FL)
SESSION V. DIGITAL SYSTEM DESIGN
MONDAY P.M. BALLROOM
4
Chairman: Arnold Barish (IBM)
Co-chairman:
Loren Yee
(National)
5.1 (1
:45-2:35 P.M.) Why the Circuit Designer Has to Learn to Like the Package Designer
d
116
Unvited
Tutoria»
:
Evan DavHsofi
{ІЩ
*
)аат:Р.Јаш,0.ШЛ^та
D124
P.
Korasen
(DEC)
5Л(3:СЮ^:25Р М.)
A Novtf Design
Оз^ р130
SESSION
VI
:
HIGH-SPEED DIGITAL CIRCUITS
MONDAY P.M. BALLROOM
4
Chairman: Dan
Hopta
(DEC)
Co-chairman
:
Robert Stehlin
(TI)
6.1 (3:35-4:00
P.M.) Sub-1
5
psec Gate Delay with New AC-Coupted Active Pull-Down ECL Circuit
:
p.
136
K.-Y. Toh, J. Warnock, J. Cresster, K. Jenkins, D.
Danner
and T.-C. Chen (IBM)
6.2 (4:00-4:25
P.M.) A Redundancy Technique for Ultra-High-Speed SRAMs
:
A Redundancy p.139
Technique for Ultra-High-Speed SRAMs
:
H.
Nambu,
К.
Kanetani,
Y.
Idei,
N.
Horrura,
Κ.
Yamaguchi, T. Hiramoto,
N.
Tamba,
M. Odaka, K. Watanabe, T. Ikeda, K. Ohhata and
Y. Sakurai (Hitachi)
6.3 (4:25-4:50
P.M.) On the Leverage of
High-fŢ
Transistors for Advanced High-Speed Bipolar p.142
Circuits
:
C. Chuang, K. Chin, J. Stork, G.
Patton,
E.
Crabbé
and J. Comfort (IBM)
6.4 (4:50-5:15
P.M.) Sub-1
00
μτη2
PNP Load Cell for Sub-nsee
256
kbit ECL RAM
:
T. Morikawa and p.
146
T. Tashiro (NEC)
PANEL DISCUSSION A P151
PANEL DISCUSSION
В
P152
SESSION
VII:
DEVICE PHYSICS
TUESDAY A.M. BALLROOM
1
Chairman: Jim Dunkley (SSI)
Co-chairman: Jim Seefeldt (Univ. of Wl)
7.1 (8:30-8:55
P.M.) An Improved Model for Coitector Currents in Lateral PNP Transistors
:
p.154
K. Joardar (Motorola)
7.2 (8:55-9:20
A.M.) Determination of Base and Emitter Delay Time in Advanced Self-Aligned Bipolar p.
158
Technology
:
T.-Y.
Chiu,
M. T. Y.
Liu
and
К.
F. Lee
(АТаТ)
7.3 (9:20-9:45
А.М.)
Speed Advantage of Deep Sub-Micron BiNMOS Gate over CMOS at Liquid p.162
Nitrogen Temperature
:
H. Satake, T. Hamasaki, and T. Maeda (Toshiba)
7.4 (9:45-10:10
A.M.) Analytical Optimazation of Si and Si-Ge Epitaxial Base Transistors for Very High p.
166
Speed ECL Gates
:
M. Ghannam (IMEC, Belgium)
7.5 (10:20-10:45
A.M.) Temperature Dependence and Post-Stress Recovery of Hot Electron p.170
Degradation Effects in Bipolar Transistors (C.-J. Huang,
С
Sun, T. Grotjohn, and
D.
Reinhard
(Michigan State Univ. and IBM)
7.6 (10:45-11
:10 A.M.) Mechanisms of tonizing-Radiation-Induced Gain Degradation in Modern p.174
Bipolar Transistors
:
R. Nowlin,
E. Ertoe,
R.
Schrimpf, and
W.
Combs (Univ. of AZ,
Mission Research and Naval Weapons Supp. Crrtr.)
7.7 (11
:1
0-11
:35 A.M.) Surface Recombination in Bipolar Transistors-, Accurate Determination of p.178
Capture Cross Sections of
SÍ/SÍO2
States by Process/Device Simulation: E.
Dubois
(ISEN-URACNRS, France)
7.8 (11
:35 A.M.-
12:00 P.M.)
Direct Measurement and Analysis of Highly injected Intrinsic Base p.182
Potential
:
A. Azuma,
T.
Maeda, and H. Momose (Toshtoa)
SESSION VIII :
HIGH-FREQUENCY CHARACTERIZATION
TUESDAY A.M. FIFTH SEASON ROOM (6th floor)
Chairman: Ron Knepper (IBM)
Co-chairman; Huang Chen (Honeywell)
8.1 (8:30-8:55
A.M.) An Improved De-Embedding Technique for On-Wafer High-Frequency p.188
Characterization
:
M.
Kooien,
J.
Geeten and M. Versleijen (Philips)
8.2 (8:55-9:20
A.M.) New RF Probe Pad and Interconnection Model and Parameter Extraction p.192
Technique for HBT Equivalent Circuit
:
S. Lee and A. Gopinath (Univ. of MN)
8.3 (9:20-9:45
A.M.) An Accurate Technique for the Direct Measurement of the Base Spreading p.196
Resistance of Bipolar Transistors
:
W. Thomann and S.
G. Knorr
(Colby Instruments and
Technische
Universität München)
8.4 (9:45-10:10
A.M.) Measurement of Base Resistance of a Bipolar Transistor
:
T. Nakadai and p.200
K. Hasimoto (Fujitsu)
SESSION IX
:
DIGITAL PRODUCT ADVANCEMENTS
TUESDAY A.M. FIFTH SEASON ROOM (6th floor)
Chairman: Bill Sievers (AMD)
Co-chairman: Raj Bachireddy (Cirrus Logic)
9.1 (10:20-10:45
A.M.) A
190
psec
0.5 um
Mixed BiCMOS/CMOS Channelless Gate Array Family
:
p.206
Y. Nishto,
N.
Oka, S. Takahashi, and M. Shbata (Hitachi)
3.2
(10:45-11
:10 A.M.) MBiCMOS: Comptex Logic and Modified Gates for Improved Performance
:
p.
210
R.
Rits
and J.
Plummer (Stanford)
9.3 (11
:1
0-11
:35 A.M.)
ВЮМО8
Boundary Scan Circuits for IEEE
1149.1 :
R. Shookhttm, p214
B. Mansoorian, L. Lee, D. Rhodes and S. Snahrokhinia (Unisys)
9.4 (11
:35A.M.-1
2:00
P.M.) A Digitally Programmable Delay Line and Duty Cycle Controller with p.218
Picosecond Resolution
:
D. Murakami and T. Kuwabara (Sony)
SESSION X
:
ANALOG I
TUESDAY A.M. BALLROOM
2
Chairman:
Chris Mangelsdorf
(Analog Devices)
Co-chairman: Bill Davis (Motorola)
10.1 (8:30-9:20
A.M.) Current-Mode Analog Signal Processing (Invited Tutorial)
:
John Lidgay and p.224
Chris Toumazou (Oxford Polytechnic and
imperiał
College)
10.2 (9:20-9:45
A.M.) A Wideband Current-Mode Variable Gain Control Circuit
:
B. Harvey (Elantec) p.233
10.3 (9:45-10:10
A.M.) A User Diode Current Driver with
Photodiode
Sense Amplifier
:
J. Price (VTC) p.241
10.4 (10:20-11
:1O A.M.) GaAs HBTs: An Anatofl Circuit Design Perspective (Invited Tutorial)
:
p.245
John Corcoran (Hewlett-Packard Laboratories)
10.5 (11:10-11
:35 A.M.) A
100
Ms/sec
700
MHz Bandwidth Sampte-and-HoW Amplifier
:
M.
Imamura p
253
N.
Kusayanagi and
M.
Segami (Yokogawa
Electric)
10-б
(11
35A.M.-12.-00 P.M.) A New Technique for Monolithic
D/A
Conversion
:
D. Bowers r257
(Analog Devices, PMI
Div.) ^
SESSION
XI
:
ISSUES
AND MODELING
TUESDAY P.M. BALLROOM
1
Chairman: Tom Long (AT&T)
Co-chairman: Jon Schieltz (Tektronix)
11.1 (1
:30-1:55 P.M.) The Control of Polysilicon/SHtcon Interface Processed by Rapid Thermal p.263
Annealing: T. Liu, Y. Kirn, K. Lee, D. Jeon and A. Ourrnadz (AT&T)
11.2 (1
:55-2:20 P.M.) Base-Dopant Density Variation with Emitter Size in Polysilicon-Emitter p.267
Transistors
:
B. Yun, B. Cunningham, J. Snare, K. Barnes and R.
Lange (IBM)
11.3 (2:20-2:45
P.M.) Stress Analysis of Trench Isolation Structure in Advanced Bipolar LSIs: p.271
Y. Katsumata, I. Katakabe,
N.
Itoh, E. Tsukioka,
С
Yoshino, and H. Iwai (Toshiba)
11.4 (2:45-3:10
P.M.) Impact of Ion-Implantation Damage and Transient Enhanced Diffusion on p.275
Advanced Bipolar Technologies
-
Comparisons Between Experiments and Non-Equilibrium
Diffusion Modeling
:
B. Baccus
(ISEN),
T.
Wada,
N.
Shigyo,
M. Norishima and H. Iwai (Toshiba)
SESSION
XII :
ANALOG
H
TUESDAY P.M. BALLROOM
2
Chairman: Bill Davis (Motorola)
Co-chairman: Derek Bowers (Analog Devices, PMI
Div.)
12.1 (1
:30-i
:55 P.M.) A High-Performance
Micropower
Op Amp
:
D. Bray
(Interdesign)
p.281
12.2 (1
:55-2:20 P.M.) Sleep Mode Amplifier
:
R. Vyne, T. Perry, and R.
Koda
(Motorola) p.285
12.3 (2:20-2:45
P.M.) A Self-Calibrating BiCMOS Comparator
:
B.
Rezaví
and B.
Woołey p289
(Stanford)
12.4 (2:45-3:10
P.M.) A High-Speed Jitter-Tolerant Clock and Data Recovery Circuit Using p.293
Crystal-Based Dual
PLL
:
S. Sun
(Micronix)
AUTHOR
INDEX
Рш
|
| any_adam_object | 1 |
| author_corporate | Bipolar Circuits and Technology Meeting Minneapolis, Minn |
| author_corporate_role | aut |
| author_facet | Bipolar Circuits and Technology Meeting Minneapolis, Minn |
| author_sort | Bipolar Circuits and Technology Meeting Minneapolis, Minn |
| building | Verbundindex |
| bvnumber | BV005914518 |
| callnumber-first | T - Technology |
| callnumber-label | TK7874 |
| callnumber-raw | TK7874 |
| callnumber-search | TK7874 |
| callnumber-sort | TK 47874 |
| callnumber-subject | TK - Electrical and Nuclear Engineering |
| classification_rvk | ZN 4960 |
| classification_tum | ELT 340f |
| ctrlnum | (OCoLC)25053427 (DE-599)BVBBV005914518 |
| dewey-full | 621.3815 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.3815 |
| dewey-search | 621.3815 |
| dewey-sort | 3621.3815 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Conference Proceeding Book |
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| genre | (DE-588)1071861417 Konferenzschrift 1991 Minneapolis Minn. gnd-content |
| genre_facet | Konferenzschrift 1991 Minneapolis Minn. |
| id | DE-604.BV005914518 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T16:36:47Z |
| institution | BVB |
| institution_GND | (DE-588)5067834-6 |
| isbn | 078030103X 0780301048 0780301056 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-003703416 |
| oclc_num | 25053427 |
| open_access_boolean | |
| owner | DE-91 DE-BY-TUM DE-83 |
| owner_facet | DE-91 DE-BY-TUM DE-83 |
| physical | 299 S. graph. Darst. |
| publishDate | 1991 |
| publishDateSearch | 1991 |
| publishDateSort | 1991 |
| publisher | Inst. of Electrical and Electronic Engineers |
| record_format | marc |
| spelling | Bipolar Circuits and Technology Meeting 1991 Minneapolis, Minn. Verfasser (DE-588)5067834-6 aut Proceedings of the 1991 Bipolar Circuits and Technology Meeting Minneapolis Marriott City Center Hotel September 9 - 10, 1991 ed. by Janice V. Jopke New York, NY Inst. of Electrical and Electronic Engineers 1991 299 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Literaturangaben Bipolar integrated circuits Congresses Bipolar transistors Congresses Bipolarschaltung (DE-588)4145667-1 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 1991 Minneapolis Minn. gnd-content Bipolarschaltung (DE-588)4145667-1 s DE-604 Jopke, Janice V. Sonstige oth Digitalisierung TU Muenchen application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=003703416&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Proceedings of the 1991 Bipolar Circuits and Technology Meeting Minneapolis Marriott City Center Hotel September 9 - 10, 1991 Bipolar integrated circuits Congresses Bipolar transistors Congresses Bipolarschaltung (DE-588)4145667-1 gnd |
| subject_GND | (DE-588)4145667-1 (DE-588)1071861417 |
| title | Proceedings of the 1991 Bipolar Circuits and Technology Meeting Minneapolis Marriott City Center Hotel September 9 - 10, 1991 |
| title_auth | Proceedings of the 1991 Bipolar Circuits and Technology Meeting Minneapolis Marriott City Center Hotel September 9 - 10, 1991 |
| title_exact_search | Proceedings of the 1991 Bipolar Circuits and Technology Meeting Minneapolis Marriott City Center Hotel September 9 - 10, 1991 |
| title_full | Proceedings of the 1991 Bipolar Circuits and Technology Meeting Minneapolis Marriott City Center Hotel September 9 - 10, 1991 ed. by Janice V. Jopke |
| title_fullStr | Proceedings of the 1991 Bipolar Circuits and Technology Meeting Minneapolis Marriott City Center Hotel September 9 - 10, 1991 ed. by Janice V. Jopke |
| title_full_unstemmed | Proceedings of the 1991 Bipolar Circuits and Technology Meeting Minneapolis Marriott City Center Hotel September 9 - 10, 1991 ed. by Janice V. Jopke |
| title_short | Proceedings of the 1991 Bipolar Circuits and Technology Meeting |
| title_sort | proceedings of the 1991 bipolar circuits and technology meeting minneapolis marriott city center hotel september 9 10 1991 |
| title_sub | Minneapolis Marriott City Center Hotel September 9 - 10, 1991 |
| topic | Bipolar integrated circuits Congresses Bipolar transistors Congresses Bipolarschaltung (DE-588)4145667-1 gnd |
| topic_facet | Bipolar integrated circuits Congresses Bipolar transistors Congresses Bipolarschaltung Konferenzschrift 1991 Minneapolis Minn. |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=003703416&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
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