Gallium arsenide and related compounds 1991: proceedings of the Eighteenth International Symposium on Gallium Arsenide and Related Compounds, Seattle, Washington, USA, 9 - 12 September 1991
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| Weitere Verfasser: | |
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| Format: | Tagungsbericht Buch |
| Sprache: | English |
| Veröffentlicht: |
Bristol [u.a.]
Inst. of Physics Publ.
1992
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| Schriftenreihe: | Institute of Physics <London>: Institute of Physics conference series
120 |
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| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | XX, 659 S. Ill., graph. Darst. |
| ISBN: | 0854984100 |
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| 245 | 1 | 0 | |a Gallium arsenide and related compounds 1991 |b proceedings of the Eighteenth International Symposium on Gallium Arsenide and Related Compounds, Seattle, Washington, USA, 9 - 12 September 1991 |c ed. by G. B. Stringfellow |
| 264 | 1 | |a Bristol [u.a.] |b Inst. of Physics Publ. |c 1992 | |
| 300 | |a XX, 659 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 1 | |a Institute of Physics <London>: Institute of Physics conference series |v 120 | |
| 650 | 4 | |a Gallium arsenide semiconductors |v Congresses | |
| 650 | 4 | |a Semiconductors |v Congresses | |
| 650 | 0 | 7 | |a Galliumarsenid |0 (DE-588)4019155-2 |2 gnd |9 rswk-swf |
| 655 | 7 | |0 (DE-588)1071861417 |a Konferenzschrift |y 1991 |z Seattle Wash. |2 gnd-content | |
| 689 | 0 | 0 | |a Galliumarsenid |0 (DE-588)4019155-2 |D s |
| 689 | 0 | |5 DE-604 | |
| 700 | 1 | |a Stringfellow, Gerald B. |4 edt | |
| 711 | 2 | |a International Symposium on Gallium Arsenide and Related Compounds |n 18 |d 1991 |c Seattle, Wash. |j Sonstige |0 (DE-588)5066818-3 |4 oth | |
| 830 | 0 | |a Institute of Physics <London>: Institute of Physics conference series |v 120 |w (DE-604)BV002806317 |9 120 | |
| 856 | 4 | 2 | |m Digitalisierung TU Muenchen |q application/pdf |u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=003702893&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |3 Inhaltsverzeichnis |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-003702893 | ||
Datensatz im Suchindex
| _version_ | 1804120103985348608 |
|---|---|
| adam_text | Contents
v GaAs Symposium
Award and
Heinrich
Welker
Gold Medal
vii
Young Scientist Award
ix
Preface
Chapter
1:
Plenary Papers
1-8
New directions for III-V structures: metal/semiconductor heteroepitaxy
J P
Harbison,
Τ
Sands,
C J
Palmstrom,
TL
Cheeks,
L TFlorezand
V
G Keramidas
9-16
Short
wavelength II-VI
laser diodes
MA Haase,
J Qiu, J
MDePuydt and H
Cheng
17
Two-dimensional electron optics in GaAs
H L
Stormen
J
Spector,
J S
Werner,
К
W
Baldwin,
L N
Pfeiffer
and
K
W
West
Chapter
2:
Epitaxy, mainly Molecular Beam
19—24
Facet formation observed in mombe of GaAs on a patterned substrate
Y
Morishita,
Y
Nomura,
S
Goto,
Y
Katayama and
T
Isu
25—30
Atomically flat AlGaAs/GaAs
(110)
heterointerface
grown by molecular
beam epitaxy
G
Tanaka,
К
Hirakawa,
H
Ichinose and
T
Ikoma
31—36
Abrupt heterojunctions of AlGaAs/GaAs quantum wells grown on
(lll)A GaAs substrates by molecular beam epitaxy
T
Yamamoto,
M
Fujii,
TTakebe,
D
Lovell and
К
Kobayashi
37—42
Confinement of excess arsenic incorporated in thin layers of
мвЕ
-grown
low-temperature GaAs
J P
Ibbetson,
C R
Bolognesi,
H
Weman,
А С
Gossard
and
U
К
Mishra
43—48
Etching of GaAs and AlGaAs by H* radical produced with a tungsten
filament
R
Kobayashi,
К
Fujii
and
F Hasegawa
49—53
Reduction in the outdiffusion into epitaxial Ge grown on GaAs using a
thin AlAs interlayer
A L
Demirel,
S Strite,
A Agarwal,
M S
Ünlü,
DSL
Mui,
A Rockett
and
H Morkoç
55-60
Improvement of the electrical properties of mbe grown Ge layers and its
application to collector-top n-GaAs/p-Ge/n-Ge
нвтѕ
T
Kimura,
M
Kawanaka,
T
Baba
and
J
Sone
xii Contents
61-66
Defects in vertical zone melt (vzm) GaAs
PER Nordquist,
R L
Henry,
J S Blakemore, R J
Gorman and
S B Saban
67—71
Constant
temperature growth of uniform-composition In^Gaj.^As bulk
crystals by supplying GaAs
К
Nakajima and
T
Kusunoki
73-78
In^Alj.^s/InP: organometallic molecular beam epitaxial growth and
optical properties
M
JSP
Brasil,
R E Nahory,
WE Quinn,
M C Tamargo, R
Bhat and
MA Koza
79-82
Strained quantum well InGaSb/AlGaSb heterostructures grown by
molecular beam epitaxy
ƒ
F Kiem,
J
Л
Lott,
J E
Schirber and
S R
Kurtz
83-88
Growth and characterization of InAs^^Sb^ layers on GaSb substrates
A YPolyakov,
M
Stam,
A Z Li and A GMilnes
89-93
An investigation of the structural and insulating properties of cubic GaN
for GaAs—GaN semiconductor—insulator devices
S
Strite,
DSL
Mui,
G
Martin,
Z
Li,
D J Smith and H
Morkoç
95-100
Transmission
electron
microscopy study of intermetallic compound
РезАуЗі^
epitaxially grown on GaAs
Y-FHsieh,
M
Hong, JKwo,
A R
Kortan,
HS
Chen and
J P
Mannaerts
101-106
Magneto-optic and Schottky barrier properties of MnAl/AlAs/GaAs
heterostructures
T L
Cheeks,
R E
Nahory,
T
Sands,
J P
Harbison,
M J S P
Brasil,
HL Gilchrist, SA Schwarz,
MA A Pudensi, S JAllen
Jr,
L TFlorez
and V G Keramidas
107-112
MBE
growth optimization and thermal stability of strained In0 25Ga0 75As
layers in MODFET layer structures
H
Nickel,
R
Lösch,
W
Schlapp,
H
Kraut
le, A
Kieslich
and A
Forchel
113-118
Thermal annealing effects on the defect and stress reduction in undercut
GaAs on Si
S
Sakai,
N
Wada
and
C L Shao
Chapter
3:
mesfets and modfets
119—124
Extensive study on the effect of undoped GaAs layers on mesfet
channels and its application for Ku-band extra high output power devices
N Iwata, H Mizutani, S
Ichikawa, A Mochizuki and
H Hirayama
125—130
Characterization of anomalous frequency dispersion in GaAs bp-mesfets
by direct large-signal I- V measurement
Y
Arai,
M
Kasashima,
N
Kobayashi,
HI Fujishiro, H Nakamura
and
SNishi
Contents xiii
131-136
High quality and very thin active layer formation for ion implanted
GaAs
mesfets
S
Sugitani,
К
Ónodéra,
KNishimura,
F
Hyuga and
К
Asai
137—141
Novel carbon-doped p-channel GaAs mesfet grown by mombe
F
Ren,
C R
A berna
t hy and
S J
Pearton
143-148
Pseudomorphic
GaAs/GalnAs pulse-doped mesfets grown by
organometallic
vapor
phase
epitaxy
N
Kuwata, S
Nakajima, T
Katsuyama,
KOtobe, K
Matsuzaki,
T
Sekiguchi,
N
Shiga and H Hayashi
149—154
Two-dimensional electron gas analysis on pseudomorphic heteroj unction
field-effect transistor structures by
photoluminescence
HBrugger,
H
Müssig,
С
Wölk,
F J
Berlec,
R
Sauer,
K
Kern and
D
Heitmann
155-160
Investigation of pseudomorphic InGaAs
hemt
interfaces
S
Mottet,
P Audren, J M
Dumas,
C Vuchener, J Paugam
and
M PFavennec
161-166
Investigation
of transport phenomena in pseudomorphic modfets
J
Braunstem,
P
Tasker,
К
Köhler,
T
Schweizer,
A
Hülsmann,
M
Schlechtweg and
G
Kaufei
167-172
Influence
of the doping position on the performance of high speed
AlGaAs/InGaAs hfets with doped channels
J
Dickmann,
С
Woelk,
A
Schurr,
H
Daembkes,
H
Nickel,
R
Lösch
and
W
Schlapp
173-178
A p-channel GaSb heteroj unction field-effect transistor based on a
vertically integrated complementary circuit structure
К
Yoh,
К
Kiyomi,
H
Taniguchi,
M
Yano and
M
Inoue
Chapter
4:
Processing
179-182
Thermally stable In-based ohmic contacts to p-type GaAs
P
-Е
Hallali, M
Murakami,
W
H
Price and
M H Norcott
183-186
Mushroom shaped gates in a dry etched recessed gate process
G
Kauf
el,
A
Hülsmann,
В
Ray nor,
К
Köhler, P Hof mann, J Schneider,
J
Hornung,
M
Berroth
and T
Jakobus
187-190
Epitaxial
Al
on
б
-doped
GaAs:
a reproducible and very thermally stable
low resistance non-alloyed ohmic contact to GaAs
M
Missous
191-194
Characteristics of dry-etched GaAs
p—n
junctions grown by mombe
C R Abernathy, S J
Pearton,
F
Ren,
T R Fullowan and J R
Lothian
xiv Contents
195-198
Incorporation
of hydrogen into III-V semiconductors during growth
and processing
SJPearton, CRAbernathy,
W
S
Hobson,
F
Ren, TRFullowan,
J Lopata, U K Chakrabarti, D M Kožuch and M
Stavola
199-202
Improvement of breakdown voltage characteristics of GaAs junction by
damage-creation of ion-implantation
YShimamoto,
T
Tanaka,
К
Itakura and
D Ueda
203-206
Small size collector-up AlGaAs/GaAs
нвтѕ
fabricated using H +
implantation
T
Hírőse,
К
Inoue and
M Inada
207-210
Elimination of mesa-sidewall gate-leakage in InAlAs/InGaAs hfets by
selective sidewall recessing
S R
Bahl and
J
A del Alamo
211-214
Electrical properties of
η
-type
and p-type Al0 48In0 52As Schottky
barriers
L P
Sadwick,
С
W
Kim,
K L
Tan
and D C
Streit
215-218
Selective area epitaxial growth and fabrication of GaAs mesfets for
monolithic microwave circuits
HKanber,
M
Sokolich,
SX
Bar,
M
I Herman, PNorris,
С
Beckham
and
D
Walker
219-222
Μη
diffusion in GaAs and its effect on impurity-induced layer
disordering in GaAs—AlGaAs superlattices
К С
Hsieh, CHW^GE
Höfler, N
El-Zein and
N
Holonyak Jr
Chapter
5:
Characterization
223-226
The effect of defects and
interfacial
stress on InGaAs/GaAs
heteroj unction
fet
reliability
A Christou and
J M
Ни
227-230
Magneto-quantum tunneling phenomena in AlGaAs/GaAs resonant
tunneling diodes
H M Yoo, S M Goodnick,
T G Stoebe and J R
Arthur
231 -234
Study of a two dimensional electron gas by a new approach in
modulation spectroscopy
A Badakhshan and
M
Sydor
235-238
Temperature dependence of
photoluminescence
decay time in tunneling
bi-quantum-well structures
Y
Sugiyama, A Tackeuchi,
T
Inata
and
S
Muto
239—242
The substrate current by impact ionization in GaAs mesfets
T
Yokoyama and A Tamura
Contents xv
243-246 RHEED
analysis for stoichiometric GaAs growth of migration enhanced
epitaxy
M
Yano,
К
Masahara,
К
Yoh,
Y
Iwai and
M
Inoue
247-250
Problems in the use of epitaxial AlAs layers as calibration standards for
the
Al
content of AlGaAs/GaAs layers
I
С
Bassignana,
D
A Macquistan and
A J
SpringThorpe
251-254
Hot-electron-acceptor luminescence in quantum wells: a quantitative
measurement of the hole dispersion curves
M
Zachau, JA
Kash and
W
T
Masselink
255—258
Novel frequency dispersive transconductance measurement technique for
interface states in
fets
W
Lee, SA
Tabatabaei and A A Iliadis
259-262
Semi-insulating InP characterized by photoreflectance
D
К
Gaskill, N Bot
tka,
G
Staufand
А К
Berry
263-266
Confined states in InGaAs/InAlAs single quantum wells studied by
room temperature phototransmitance and electrotransmitance at high
electric fields
A Dimoulas,
A Georgakilas, G
Halkias,
C
Zekentes,
C Michelakis
and
A Christou
267-270
Impact ionization phenomena in GaAs mesfets: experimental results
and simulations
A Neviani,
С
Tedesco, E
Zanoni,
C U
N
aldi
and
M
Pirola
271—274
Optically determined low-temperature, high-mobility transport in
interface-free GaAs heterostructures
D J
Wolf
ord,
G D Gilliland, T F Kuech, JA
Bradley
and H P
Hjalmarson
Chapter
6:
нвтѕ
and InGaAlAs
fets
275-280
In0 52A1O
^gAs/InQ
jjGaQ 47As higfets using novel
0.2
џт
self-aligned
Т
-gate technology
Y-J Chan,
D
Pavlidis and
T
Brock
281-286
Reduced silicon movement in GalnAs/AlInAs
hemt
structures with low
temperature AlInAs spacers
A S
Brown,
L D
Nguyen,
R
A
Metzger,
M
Matloubian,
A E
Schmitz,
M Lui,
R G
Wilson and
J A Henige
287-292
Effect of
n
and
p
channel doping on the I- V characteristics of
AlInAs-GalnAs hemts
U
KMishra,
L
M
Jelioian,
M Lui, M Thompson, S
E
Rosenbaum
and
К
W Kim
xvi Contents
293—298
MOVPE growth, technology and characterization of Ga0 5In0 jP/GaAs
heteroj unction bipolar transistors
Κ Η
Bachern,
Th
Lauterbach,
M
Maier,
W Pletschen
and K
Winkler
299-304
Accumulation mode GaAlAs/GaAs
bipolar
transistor
with two
dimensional hole gas base
К
Matsumoto, MIshii,
H
Morozumi,
S
Imai,
К
Sakamoto,
Y
Hayashi,
W
Liu,
D
Costa,
Τ
Ma, A Massengale and
J S
Harris
305-309
A two-dimensional electron gas modulated resonant tunneling transistor
K F
Longenbach,
Y Wang and
W
I
Wang
311-315
A
two-dimensional electron gas emitter AlGaAs/GaAs heterojunction
bipolar transistor with low offset voltage
Y
Wang,
Q
Wang,
K F
Longenbach,
E S
Yang and
W
I
Wang
317-322
1/f noise in AlGaAs/GaAs
нвтѕ
using ultrasensitive characterization
techniques for identifying noise mechanisms
MTV Tutt,
D
Pavlidis,
D Pehlke, R
Plana
and
J
Graffeuil
323-328
Low-frequency noise characterization of Npn AlGaAs/GaAs
heterojunction bipolar transistors
D
Costa and
J S
Harris
Jr
329-334
Submicron
AlGaAs/GaAs heterojunction bipolar
transistor
process
with
high current gain
W-SLee, TEnoki,
S
Yamahata,
Y
Matsuoka and
T
Jshibashi
Chapter
7:
Characterization
335-340
Photoluminescence
analysis of
С
-doped npn AlGaAs/GaAs
heterojunction bipolar transistors
Z
H Lu, M
C Hanna,
E
G
Oh, A Majerfeld,
PD
Wright
and L W
Yang
341 -346
Photoluminescence investigation
of AlGaAs/GaAs
heterojunction
bipolar
transistor
layers
H
Tews,
R
Neumann,
P Zwicknagl and U
Schaper
347-352
Photoluminescence
study of GaAs
antisite
double acceptor in GaAs
under hydrostatic pressure
PWYu and A Kangarlu
353-358
Reflectance modulation studies on laser diode mirrors
P
WEpperlein and
O J F
Martin
359-363
Measurement of minority hole zero-field diffusivity in n+-GaAs
ML Lovejoy, MR Melloch,
M S
Lundström,
B M
Key es
and
RKAhrenkiel
365-370
Strained-layer relaxation by partial dislocations
D M
Hwang,
S A
Schwarz,
R
Bhat and
C Y
Chen
Contents xvii
Chapter
8:
Ordering
371-376
Local structures in GalnP on GaAs studied by fluorescence-detected
EXAFS
Y
Takeda,
H
Yamaguchi and
H Oyanagi
377-382
Effect of step motion on ordering in GalnP and GaAsP
G S
Chen and
G
В
Stringfellow
383-388
Temperature-dependent electron mobility and clustering in GaInP2
D J
Friedman,
A E
Kibbler and
J M
Olson
389-394
Local structures of single-phase and two-phase GaAs^Sb^ studied by
fluorescence-detected exafs
H
Yamaguchi,
Y
Takeda and
H
Oyanagi
395-400
Growth and optical properties of natural InAsj^b^. strained layer
superlattices
I T
Ferguson,
A G
Norman, T-Y Seong,
R H
Thomas,
С С
Phillips,
X M
Zhang,
R A Stradling, B
A Joyce and G R
Booker
Chapter
9:
Quantum Wells
401-406
Interface-free GaAs structures
—
from bulk to the quantum limit
D J
Wolf
ord,
G D Gilliland, TFKuech, J
Mart
insen, JA
Bradley,
CFTsang,
R
Venkatasubramanian, SKGhandhi,
H P
Hjalmarson
and
J
Klem
407-412
Ground-state in-plane light-holes in GaAs/AlGaAs structures
ED Jones, SKLyo,
J
F Klem,
J E
Schirber and
S Y Lin
413-418
Dynamics and transport
of
excitons
confined at high-quality
GaAs/ALXjai.^As interfaces
G
D
Gilliland,
D J
Wolf ord,
G A Northrop, TFKuech and
JA
Bradley
419-424
Anisotropy in
the interband
transitions
of
(110)
oriented
quantum
wells
D
Gershoni, I Brenen
G
A Baraff,
S
N
G Chu,
L
N
Pfeiffer
and
К
West
425—430
Ionized-impurity scattering of electrons in Si-doped GaAs/AlGaAs
quantum wells in low and high electric fields
W
T
Masselink
431—436
Free carrier induced changes in the absorption and refractive index for
intersubband optical transitions in A^Gaj^As/GaAs/Al^Ga^^As
quantum wells
G Ulyengar, K J
Kuhn
and
S Yee
437-441
Electro-absorption in InGaAs/AlGaAs quantum wells
В
Pezeshki,
S M
Lord and
J S
Harris
Jr
xviii Contents
443-448
Studies of piezoelectric effects in [111] oriented strained
Ga^In^Sb/GaSb quantum wells
MLakrimi,
R
W
Martin,
С
López,
SL
Wong,
E
TR Chidley,
R M Graham, R J
Nicholas,
N J
Mason and
P J
Walker
Chapter
10:
Opto-electronics
449-452
A long-wavelength
pin-fet
receiver
oeic
on GaAs substrate
K Goto, E Ishimura, T Shimura, M Miyashita, Y Mihashi, T Shiba,
Y Okura, E Omura and H Kumabe
453-458
Monolithically integrated optoelectronic transmitter by movpe
A A Narayanan,
D
Yap,
S
E
Rosenbaum,
С
S Chou, W
W
Hooper and
R H
Walden
459-463
A vertically integrated driver for light-emitting devices utilizing
controllable electro-optical positive feedback
MS
Ünlü,
S Strite,
A Salvador and
HMorkoç
465-470
Heavily p-doped GaAs/AlGaAs single quantum well lasers: growth,
performance and integration with heterojunction bipolar transistors
/
Nagle,
R J
Malik,
R
W
Ryan,
J P
van der Ziel and
L C
Hopkins
471 -476
MocvD growth of vertical cavity surface-emitting lasers with graded-
composition mirrors
S Z
Sun,
E A
Armour,
D P Kopchik, K
Zheng, P Zhou, J Cheng and
С
F Schaus
477-482
Influence
of
gain saturation on
the
To values
of
short AlGaAs-GaAs
single and multiple quantum
well
lasers
H Jung,
E
Schlosser
and R
Deufel
483-486
Low threshold current density
GalnAsSb/GaAlAsSb DH
lasers emitting
at
2.2
μπι
J L
Herrera-Pérez,
M
BZ Morosini,
AC
F
da
Silveira
and N B
Patel
487—492
мвЕ
growth, material properties, and performance of GaSb-based
2.2
/tm diode lasers
S J
Eglash and
H K
Choi
493-498
Short wavelength operation of low threshold current AlGalnP strained
quantum well laser diodes
I Yoshida,
T
Katsuyama,
J
Shinkai,
J
Hashimoto and
H
Hayashi
499-504
Broad band side-emitting GaAs/AlGaAs/InGaAs single quantum well
LEDS
G
Vermeire,
P
Demeester,
K
Haelvoet,
В
Van der
Cruyssen, G
Coudenys
and P
Van Daele
505-509
Fabrication of circular gratings by fib damage on GaAs
M
Fallahi,
IM
Templeton
and
R
Normandin
Contents xix
511-515
A new application for III-V quantum well systems
—
efficiency
enhancement in solar cells
К
W
J
Barn ham,
J
Nelson,
M
Paxman,
R
Murray
and
С
TFoxon
517-522
Theoretical studies of impact
ionisation
in pseudomorphic structures of
InGaAlAs on GaAs and InP substrates
Y
Keom, V Sankaran and
J
Singh
523-528
Evaluation of new multiple quantum well avalanche
photodiode
structures: the mqw, the doped barrier and doped quantum well
P
Arist
in, A Torabi,
А К
Garrison,
H M
Harris and
C J
Summers
Chapter
11:
omvpe
529-534
The growth of GaQ 52In0 48P and Al0 18GaQ 34In0 48P on lens-shaped
GaAs substrates by metalorganic vapor phase epitaxy
N
Buchán,
WHeuberger, A Jakubowicz and
P
Roentgen
535-540
Incorporation of acceptor impurities in mocvd and gsmbe InP
S S
Bose,
S L
Jackson, A
P
Curtis
and G
E
Stillman
541—546
MOVPE growth of wire-shaped InGaAs on corrugated InP
T
Fujii,
О
Aoki and
S Yamazaki
547—552
Atomic layer epitaxy growth of InAs/GaAs heterostructures and
quantum wells
S
Goto,
К
Higuchi and
H Hasegawa
553-558
Radical-assisted organometallic vapor-phase epitaxy
S H
Li,
С
H
Chen and
G
В
Stringfellow
559-564
MOVPE growth of InGaAsP laser diodes using tertiarybutylarsine and
tertiarybutylphosphine
A Kuramata,
H
Kobayashi,
S
Ogita and
S
Yamazaki
565-570
Extremely uniform growth on 3-inch diameter InP substrates by omvpe
for N-AlInAs/GalnAs
hemt
application
M
Murata,
H
Yano,
G
Sasaki,
H Kamei
and
H
Hayashi
571-576
mocvd growth of high-quality delta-doped Al^Ga^^As-GaAs structures
S M
Vernon,
V
E
Haven,
A L
Mastrovito,
MM
Sanfacon, PA Sekula-
Moisé,
J
Ramdani and
M M Al-Jassim
Chapter
12:
Superlattices
577-582 1.3
μνα.
luminescence in
(InAs)„/(GaAs)„
strained quantum-well
structures grown on GaAs
E J
Roan,
К
Y
Cheng,
P J
Pearah, X Liu,
К С
Hsieh and S G
Bishop
583-588
Valence-band energy dispersion in modulation-doped quantum wells:
effect of strain and confinement on heavy- and light-hole mixing
S K
Lyo and
E D
Jones
xx Contents
589-594 Formation
of
lateral
quantum-wells in vertical short-period superlattices
К
Y
Cheng,
КС
Hsieh, J
N
Baillargeon and A Mascarenhas
595-600
An overview of the electronic properties of InAs^Sb^. strained-layer
superlattices (O^x^l)
S R
Kurtz,
R M
Biefeld,
L R Dawson and B L
Doyle
601-606
Resonant tunneling in a novel coupled-quantum-well base transistor
T
Waho,
К
Maezawa and
T
Mizutani
607-612
Tunneling spectroscopic study of
miniband
break-up and coherence in
finite superlattices
MA Reed,
R
Aggarwal and Y-C
Kao
613-618
Ultrathin GaAs
p
-η
junction wires
KHiruma,
К
Haraguchi,
T
Katsuyama,
M
Yazawa and
H Kakibayashi
619-624
Electron wave interference in fractional layer superlattice (fls) quantum
wires
К
Tsubaki,
T
Honda,
H
Saito
and TFukui
625-630
Second harmonic generation in AlInAs/GalnAs asymmetric coupled
quantum wells
С
Sirtori,
F
Capasso,
D L Sivco and
A Y Cho
Chapter
13:
Late News Papers
631 -634
Incorporation of interstitial carbon during growth of heavily carbon-
doped GaAs by MovcD and mombe
G
E
Höfler,
J N Baillargeon, J L Klatt, K C Hsieh, R S
Averback
and
K Y
Cheng
635-638
Optical determination of electric field and carrier concentration in
nanometric epitaxial GaAs by photoreflectance
A Badakhshan,
С
Durbin,
R
Glosser,
К
Alavi,
R S Sillmon,
PE
Thompson
and K Capuder
639—642 Magnetotransport
properties of
modulation
doped pseudomorphic
Al0 30GaQ 70As/In0 j7GaQ g3As heteroepitaxial
layers grown by mbe on
GaAs and Al0 30Ga0 70As buffer layers
/
M
Fernandez and
H H
Wieder
643-646
High temperature
( >
150°C) and low threshold current operation of
AlGalnP/Ga^Inj.^ strained multiple quantum well visible laser diodes
T
Katsuyama, I Yoshida,
J
Shinkai,
J
Hashimoto and
H
Hayashi
647-650
mbe growth and characterization of high gain AlGaAs/GaAsSb/GaAs
NpN HBTs
G J
Sullivan,
W
J
Ho,
RL
Pierson,
M K
Szwed,
M D
Lind
and
R L Bernescut
651-654
Subject
Index
655-659
Author
Index
|
| any_adam_object | 1 |
| author2 | Stringfellow, Gerald B. |
| author2_role | edt |
| author2_variant | g b s gb gbs |
| author_facet | Stringfellow, Gerald B. |
| building | Verbundindex |
| bvnumber | BV005913856 |
| callnumber-first | Q - Science |
| callnumber-label | QC611 |
| callnumber-raw | QC611.8.G3 |
| callnumber-search | QC611.8.G3 |
| callnumber-sort | QC 3611.8 G3 |
| callnumber-subject | QC - Physics |
| classification_rvk | UP 3100 |
| classification_tum | PHY 693f |
| ctrlnum | (OCoLC)25556495 (DE-599)BVBBV005913856 |
| dewey-full | 537.622 |
| dewey-hundreds | 500 - Natural sciences and mathematics |
| dewey-ones | 537 - Electricity and electronics |
| dewey-raw | 537.622 |
| dewey-search | 537.622 |
| dewey-sort | 3537.622 |
| dewey-tens | 530 - Physics |
| discipline | Physik |
| format | Conference Proceeding Book |
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| genre | (DE-588)1071861417 Konferenzschrift 1991 Seattle Wash. gnd-content |
| genre_facet | Konferenzschrift 1991 Seattle Wash. |
| id | DE-604.BV005913856 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T16:36:46Z |
| institution | BVB |
| institution_GND | (DE-588)5066818-3 |
| isbn | 0854984100 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-003702893 |
| oclc_num | 25556495 |
| open_access_boolean | |
| owner | DE-91 DE-BY-TUM DE-384 DE-20 DE-703 DE-83 |
| owner_facet | DE-91 DE-BY-TUM DE-384 DE-20 DE-703 DE-83 |
| physical | XX, 659 S. Ill., graph. Darst. |
| publishDate | 1992 |
| publishDateSearch | 1992 |
| publishDateSort | 1992 |
| publisher | Inst. of Physics Publ. |
| record_format | marc |
| series | Institute of Physics <London>: Institute of Physics conference series |
| series2 | Institute of Physics <London>: Institute of Physics conference series |
| spelling | Gallium arsenide and related compounds 1991 proceedings of the Eighteenth International Symposium on Gallium Arsenide and Related Compounds, Seattle, Washington, USA, 9 - 12 September 1991 ed. by G. B. Stringfellow Bristol [u.a.] Inst. of Physics Publ. 1992 XX, 659 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Institute of Physics <London>: Institute of Physics conference series 120 Gallium arsenide semiconductors Congresses Semiconductors Congresses Galliumarsenid (DE-588)4019155-2 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 1991 Seattle Wash. gnd-content Galliumarsenid (DE-588)4019155-2 s DE-604 Stringfellow, Gerald B. edt International Symposium on Gallium Arsenide and Related Compounds 18 1991 Seattle, Wash. Sonstige (DE-588)5066818-3 oth Institute of Physics <London>: Institute of Physics conference series 120 (DE-604)BV002806317 120 Digitalisierung TU Muenchen application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=003702893&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Gallium arsenide and related compounds 1991 proceedings of the Eighteenth International Symposium on Gallium Arsenide and Related Compounds, Seattle, Washington, USA, 9 - 12 September 1991 Institute of Physics <London>: Institute of Physics conference series Gallium arsenide semiconductors Congresses Semiconductors Congresses Galliumarsenid (DE-588)4019155-2 gnd |
| subject_GND | (DE-588)4019155-2 (DE-588)1071861417 |
| title | Gallium arsenide and related compounds 1991 proceedings of the Eighteenth International Symposium on Gallium Arsenide and Related Compounds, Seattle, Washington, USA, 9 - 12 September 1991 |
| title_auth | Gallium arsenide and related compounds 1991 proceedings of the Eighteenth International Symposium on Gallium Arsenide and Related Compounds, Seattle, Washington, USA, 9 - 12 September 1991 |
| title_exact_search | Gallium arsenide and related compounds 1991 proceedings of the Eighteenth International Symposium on Gallium Arsenide and Related Compounds, Seattle, Washington, USA, 9 - 12 September 1991 |
| title_full | Gallium arsenide and related compounds 1991 proceedings of the Eighteenth International Symposium on Gallium Arsenide and Related Compounds, Seattle, Washington, USA, 9 - 12 September 1991 ed. by G. B. Stringfellow |
| title_fullStr | Gallium arsenide and related compounds 1991 proceedings of the Eighteenth International Symposium on Gallium Arsenide and Related Compounds, Seattle, Washington, USA, 9 - 12 September 1991 ed. by G. B. Stringfellow |
| title_full_unstemmed | Gallium arsenide and related compounds 1991 proceedings of the Eighteenth International Symposium on Gallium Arsenide and Related Compounds, Seattle, Washington, USA, 9 - 12 September 1991 ed. by G. B. Stringfellow |
| title_short | Gallium arsenide and related compounds 1991 |
| title_sort | gallium arsenide and related compounds 1991 proceedings of the eighteenth international symposium on gallium arsenide and related compounds seattle washington usa 9 12 september 1991 |
| title_sub | proceedings of the Eighteenth International Symposium on Gallium Arsenide and Related Compounds, Seattle, Washington, USA, 9 - 12 September 1991 |
| topic | Gallium arsenide semiconductors Congresses Semiconductors Congresses Galliumarsenid (DE-588)4019155-2 gnd |
| topic_facet | Gallium arsenide semiconductors Congresses Semiconductors Congresses Galliumarsenid Konferenzschrift 1991 Seattle Wash. |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=003702893&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| volume_link | (DE-604)BV002806317 |
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