Modeling of chemical vapor deposition of Tungsten films:
Gespeichert in:
Hauptverfasser: | , |
---|---|
Format: | Buch |
Sprache: | English |
Veröffentlicht: |
Basel ; Boston ; Berlin
Birkhäuser
1993
|
Schriftenreihe: | Progress in numerical simulation for microelectronics
2 |
Schlagworte: | |
Beschreibung: | Literaturangaben |
Beschreibung: | 138 S. Ill., graph. Darst. |
ISBN: | 3764328584 0817628584 |
Internformat
MARC
LEADER | 00000nam a2200000 cb4500 | ||
---|---|---|---|
001 | BV005903639 | ||
003 | DE-604 | ||
005 | 19940216 | ||
007 | t | ||
008 | 921214s1993 gw ad|| |||| 00||| eng d | ||
020 | |a 3764328584 |9 3-7643-2858-4 | ||
020 | |a 0817628584 |9 0-8176-2858-4 | ||
035 | |a (OCoLC)27187530 | ||
035 | |a (DE-599)BVBBV005903639 | ||
040 | |a DE-604 |b ger |e rakddb | ||
041 | 0 | |a eng | |
044 | |a gw |c DE | ||
049 | |a DE-91 |a DE-29T |a DE-703 |a DE-634 |a DE-83 |a DE-188 | ||
050 | 0 | |a TK7871.15.F5 | |
082 | 0 | |a 621.3815/2 |2 20 | |
084 | |a UP 7550 |0 (DE-625)146434: |2 rvk | ||
084 | |a ZN 4150 |0 (DE-625)157360: |2 rvk | ||
084 | |a FER 882f |2 stub | ||
100 | 1 | |a Kleijn, Chris R. |e Verfasser |4 aut | |
245 | 1 | 0 | |a Modeling of chemical vapor deposition of Tungsten films |c Chris R. Kleijn ; Christoph Werner |
264 | 1 | |a Basel ; Boston ; Berlin |b Birkhäuser |c 1993 | |
300 | |a 138 S. |b Ill., graph. Darst. | ||
336 | |b txt |2 rdacontent | ||
337 | |b n |2 rdamedia | ||
338 | |b nc |2 rdacarrier | ||
490 | 1 | |a Progress in numerical simulation for microelectronics |v 2 | |
500 | |a Literaturangaben | ||
650 | 4 | |a Mathematisches Modell | |
650 | 4 | |a Semiconductor films |x Mathematical models | |
650 | 4 | |a Vapor-plating |x Mathematical models | |
650 | 0 | 7 | |a Wolfram |0 (DE-588)4066862-9 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a Mathematisches Modell |0 (DE-588)4114528-8 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a Dünne Schicht |0 (DE-588)4136925-7 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a CVD-Verfahren |0 (DE-588)4009846-1 |2 gnd |9 rswk-swf |
689 | 0 | 0 | |a Wolfram |0 (DE-588)4066862-9 |D s |
689 | 0 | 1 | |a CVD-Verfahren |0 (DE-588)4009846-1 |D s |
689 | 0 | 2 | |a Mathematisches Modell |0 (DE-588)4114528-8 |D s |
689 | 0 | |5 DE-604 | |
689 | 1 | 0 | |a Wolfram |0 (DE-588)4066862-9 |D s |
689 | 1 | 1 | |a Dünne Schicht |0 (DE-588)4136925-7 |D s |
689 | 1 | 2 | |a CVD-Verfahren |0 (DE-588)4009846-1 |D s |
689 | 1 | 3 | |a Mathematisches Modell |0 (DE-588)4114528-8 |D s |
689 | 1 | |5 DE-604 | |
700 | 1 | |a Werner, Christoph |e Verfasser |4 aut | |
830 | 0 | |a Progress in numerical simulation for microelectronics |v 2 |w (DE-604)BV004586845 |9 2 | |
999 | |a oai:aleph.bib-bvb.de:BVB01-003697008 |
Datensatz im Suchindex
_version_ | 1804120094529290240 |
---|---|
any_adam_object | |
author | Kleijn, Chris R. Werner, Christoph |
author_facet | Kleijn, Chris R. Werner, Christoph |
author_role | aut aut |
author_sort | Kleijn, Chris R. |
author_variant | c r k cr crk c w cw |
building | Verbundindex |
bvnumber | BV005903639 |
callnumber-first | T - Technology |
callnumber-label | TK7871 |
callnumber-raw | TK7871.15.F5 |
callnumber-search | TK7871.15.F5 |
callnumber-sort | TK 47871.15 F5 |
callnumber-subject | TK - Electrical and Nuclear Engineering |
classification_rvk | UP 7550 ZN 4150 |
classification_tum | FER 882f |
ctrlnum | (OCoLC)27187530 (DE-599)BVBBV005903639 |
dewey-full | 621.3815/2 |
dewey-hundreds | 600 - Technology (Applied sciences) |
dewey-ones | 621 - Applied physics |
dewey-raw | 621.3815/2 |
dewey-search | 621.3815/2 |
dewey-sort | 3621.3815 12 |
dewey-tens | 620 - Engineering and allied operations |
discipline | Physik Fertigungstechnik Elektrotechnik / Elektronik / Nachrichtentechnik |
format | Book |
fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>02120nam a2200577 cb4500</leader><controlfield tag="001">BV005903639</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">19940216 </controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">921214s1993 gw ad|| |||| 00||| eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">3764328584</subfield><subfield code="9">3-7643-2858-4</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">0817628584</subfield><subfield code="9">0-8176-2858-4</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)27187530</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV005903639</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakddb</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="044" ind1=" " ind2=" "><subfield code="a">gw</subfield><subfield code="c">DE</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-91</subfield><subfield code="a">DE-29T</subfield><subfield code="a">DE-703</subfield><subfield code="a">DE-634</subfield><subfield code="a">DE-83</subfield><subfield code="a">DE-188</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">TK7871.15.F5</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">621.3815/2</subfield><subfield code="2">20</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">UP 7550</subfield><subfield code="0">(DE-625)146434:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">ZN 4150</subfield><subfield code="0">(DE-625)157360:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">FER 882f</subfield><subfield code="2">stub</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Kleijn, Chris R.</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Modeling of chemical vapor deposition of Tungsten films</subfield><subfield code="c">Chris R. Kleijn ; Christoph Werner</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Basel ; Boston ; Berlin</subfield><subfield code="b">Birkhäuser</subfield><subfield code="c">1993</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">138 S.</subfield><subfield code="b">Ill., graph. Darst.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="1" ind2=" "><subfield code="a">Progress in numerical simulation for microelectronics</subfield><subfield code="v">2</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Literaturangaben</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Mathematisches Modell</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Semiconductor films</subfield><subfield code="x">Mathematical models</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Vapor-plating</subfield><subfield code="x">Mathematical models</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Wolfram</subfield><subfield code="0">(DE-588)4066862-9</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Mathematisches Modell</subfield><subfield code="0">(DE-588)4114528-8</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Dünne Schicht</subfield><subfield code="0">(DE-588)4136925-7</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">CVD-Verfahren</subfield><subfield code="0">(DE-588)4009846-1</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Wolfram</subfield><subfield code="0">(DE-588)4066862-9</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">CVD-Verfahren</subfield><subfield code="0">(DE-588)4009846-1</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="2"><subfield code="a">Mathematisches Modell</subfield><subfield code="0">(DE-588)4114528-8</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="1" ind2="0"><subfield code="a">Wolfram</subfield><subfield code="0">(DE-588)4066862-9</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2="1"><subfield code="a">Dünne Schicht</subfield><subfield code="0">(DE-588)4136925-7</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2="2"><subfield code="a">CVD-Verfahren</subfield><subfield code="0">(DE-588)4009846-1</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2="3"><subfield code="a">Mathematisches Modell</subfield><subfield code="0">(DE-588)4114528-8</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Werner, Christoph</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="830" ind1=" " ind2="0"><subfield code="a">Progress in numerical simulation for microelectronics</subfield><subfield code="v">2</subfield><subfield code="w">(DE-604)BV004586845</subfield><subfield code="9">2</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-003697008</subfield></datafield></record></collection> |
id | DE-604.BV005903639 |
illustrated | Illustrated |
indexdate | 2024-07-09T16:36:37Z |
institution | BVB |
isbn | 3764328584 0817628584 |
language | English |
oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-003697008 |
oclc_num | 27187530 |
open_access_boolean | |
owner | DE-91 DE-BY-TUM DE-29T DE-703 DE-634 DE-83 DE-188 |
owner_facet | DE-91 DE-BY-TUM DE-29T DE-703 DE-634 DE-83 DE-188 |
physical | 138 S. Ill., graph. Darst. |
publishDate | 1993 |
publishDateSearch | 1993 |
publishDateSort | 1993 |
publisher | Birkhäuser |
record_format | marc |
series | Progress in numerical simulation for microelectronics |
series2 | Progress in numerical simulation for microelectronics |
spelling | Kleijn, Chris R. Verfasser aut Modeling of chemical vapor deposition of Tungsten films Chris R. Kleijn ; Christoph Werner Basel ; Boston ; Berlin Birkhäuser 1993 138 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Progress in numerical simulation for microelectronics 2 Literaturangaben Mathematisches Modell Semiconductor films Mathematical models Vapor-plating Mathematical models Wolfram (DE-588)4066862-9 gnd rswk-swf Mathematisches Modell (DE-588)4114528-8 gnd rswk-swf Dünne Schicht (DE-588)4136925-7 gnd rswk-swf CVD-Verfahren (DE-588)4009846-1 gnd rswk-swf Wolfram (DE-588)4066862-9 s CVD-Verfahren (DE-588)4009846-1 s Mathematisches Modell (DE-588)4114528-8 s DE-604 Dünne Schicht (DE-588)4136925-7 s Werner, Christoph Verfasser aut Progress in numerical simulation for microelectronics 2 (DE-604)BV004586845 2 |
spellingShingle | Kleijn, Chris R. Werner, Christoph Modeling of chemical vapor deposition of Tungsten films Progress in numerical simulation for microelectronics Mathematisches Modell Semiconductor films Mathematical models Vapor-plating Mathematical models Wolfram (DE-588)4066862-9 gnd Mathematisches Modell (DE-588)4114528-8 gnd Dünne Schicht (DE-588)4136925-7 gnd CVD-Verfahren (DE-588)4009846-1 gnd |
subject_GND | (DE-588)4066862-9 (DE-588)4114528-8 (DE-588)4136925-7 (DE-588)4009846-1 |
title | Modeling of chemical vapor deposition of Tungsten films |
title_auth | Modeling of chemical vapor deposition of Tungsten films |
title_exact_search | Modeling of chemical vapor deposition of Tungsten films |
title_full | Modeling of chemical vapor deposition of Tungsten films Chris R. Kleijn ; Christoph Werner |
title_fullStr | Modeling of chemical vapor deposition of Tungsten films Chris R. Kleijn ; Christoph Werner |
title_full_unstemmed | Modeling of chemical vapor deposition of Tungsten films Chris R. Kleijn ; Christoph Werner |
title_short | Modeling of chemical vapor deposition of Tungsten films |
title_sort | modeling of chemical vapor deposition of tungsten films |
topic | Mathematisches Modell Semiconductor films Mathematical models Vapor-plating Mathematical models Wolfram (DE-588)4066862-9 gnd Mathematisches Modell (DE-588)4114528-8 gnd Dünne Schicht (DE-588)4136925-7 gnd CVD-Verfahren (DE-588)4009846-1 gnd |
topic_facet | Mathematisches Modell Semiconductor films Mathematical models Vapor-plating Mathematical models Wolfram Dünne Schicht CVD-Verfahren |
volume_link | (DE-604)BV004586845 |
work_keys_str_mv | AT kleijnchrisr modelingofchemicalvapordepositionoftungstenfilms AT wernerchristoph modelingofchemicalvapordepositionoftungstenfilms |