NASECODE VII transactions: selected papers from the seventh International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits, Copper Mountain, Colorado, USA, April 1991
Gespeichert in:
Körperschaft: | |
---|---|
Format: | Tagungsbericht Buch |
Sprache: | English |
Veröffentlicht: |
London u.a.
James & James u.a.
1991
|
Schriftenreihe: | Compel
10,4 |
Schlagworte: | |
Online-Zugang: | Inhaltsverzeichnis |
Beschreibung: | Literaturangaben. - Einzelaufnahme eines Zs.-Bandes |
Beschreibung: | VI S., S. 205 - 645 graph. Darst. |
ISBN: | 1873936095 |
Internformat
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245 | 1 | 0 | |a NASECODE VII transactions |b selected papers from the seventh International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits, Copper Mountain, Colorado, USA, April 1991 |c ed. by John J. H. Miller |
264 | 1 | |a London u.a. |b James & James u.a. |c 1991 | |
300 | |a VI S., S. 205 - 645 |b graph. Darst. | ||
336 | |b txt |2 rdacontent | ||
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490 | 0 | |a Compel |v 10,4 | |
500 | |a Literaturangaben. - Einzelaufnahme eines Zs.-Bandes | ||
650 | 4 | |a Mathematisches Modell | |
650 | 4 | |a Integrated circuits |x Mathematical models |v Congresses | |
650 | 4 | |a Numerical analysis |v Congresses | |
650 | 4 | |a Semiconductors |x Mathematical models |v Congresses | |
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Datensatz im Suchindex
_version_ | 1804119751506526208 |
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adam_text | CONTENTS
Preface vi
DEVICE MODELING
Charge transfer in the presence of potential barriers
E.K.
Banghart,
J.P.
Lavine,
J.M. Pimblcy
and B.C. Burkcy
205
A hybrid solution of the semiconductor device equations
I Ian Efrat and Moshc Israeli
215
Transient simulation of silicon devices under high carrier injection. Comparison of various time stepping
schemes
A. Michcz and G.
Bordure
231
NEW QUANTUM WELL DEVICES
Intrinsic high-frequency oscillations and equivalent circuit model in the negative differential resistance
region of resonant tunneling devices
F.A. Buot and K.L. Jensen
241
Two-dimensional modeling of quantum-well semiconductor lasers
Z.-M. Li,
K.M.
Dzurko and S.P. McAlister
255
Tailoring the two dimensional electron gas distribution by selective doping of the quantum well
A.F.M. Anwar and R.D. Carrol
269
ENERGY TRANSPORT MODELING
A transport model for carriers in small spatial/temporal scale compound semi-conductor devices
Ming-Cheng Cheng and
E. E.
Kunhardt
277
Simulation of bipolar transport in semiconductor
p
-η
junctions using the generalized hydrodynamic
equations
Mohammad Hamza, H. Morel and J. P.
Chante
289
A comparison between the hcterojunction bipolar transistor power performance computed using large
signal
У
parameters and a full time domain simulation
Douglas A. Tcctcr, Jack R. East,
Richard K.Mains
and George I. Haddad
301
Unified framework for thermal, electrical, magnetic, and optical semiconductor device modeling
Gerhard Wachutka
311
PROCESS SIMULATION
An empirical model for the electronic stopping of boron in silicon
G.
Hobler,
H.
Põtzl,
L. Palmetshofer, R. Schork, J.
Lorenz,
C.
Tian,
S.
Gara
and G. Stingedcr
323
A comprehensive and computationally efficient modeling strategy for simulation of boron ion
implantation into single-crystal silicon with explicit dose and implant angle dependence
Changhac Park, Kevin M.
Klein, AI F.
Tasch, Robert
B. Simonton,
Steve Novak and Gaylc Lux
331
NOVEL: a nonlinear viscoelastic model for thermal oxidation of silicon
J.P. Peng, D. Chidambarrao and G.R. Srinivasan
341
CIRCUIT
MODELING
Optical power coupling in symmetric triangular periodic structures
V. Jayan and P.R.
Vaya
355
Simulation of
MOS
circuits using spectral technique in relaxation framework
O.A.
Palusinski and M.W. Guarini
363
Transient and small-signal high-frequency simulation of numerical device models embedded in an
external circuit
Michael
Schröter 377
CONFRONTATION WITH EXPERIMENTS
Bulk image effects of photoresist in three-dimensional profile simulation
Tatsumi Isbizuka
389
2D process simulation of dopant diffusion in polysilicon
S -K
.
Jones and
A .Gćrodolle
401
COMPUTATIONAL TECHNIQUES
A multigrid algorithm with time-dependent, locally refined grids for solving the nonlinear diffusion
equation on a nonrectangular geometry
-
practical aspects
W. Joppich
411
Semiconductor device modelling for heterojunctions structures with mixed finite elements
F. Hecht,
A. Marrocco, E. Caquot and M. Filochc
425
Advanced numerical techniques in semiconductor device simulation
W.H.A.
Schilders
439
Algorithm for modelling generally described semiconductors
Sasa Sokolic,
Slávko
Amon,
Franc
Smole and
Dejan
Križaj
449
MATHEMATICAL TECHNIQUES
A useful analogy between semiconductor voltage-current characteristics and combustion branching
diagrams
Karl
Gustafson
465
A note on current discretization in the hydromodcl
Kamel
Souissi, F. Odch and Antonio Gnudi
475
WAVEFORM RELAXATION
Waveform relaxation-based circuit optimization
Bo Oldc and
Sven Mattisson 487
Connecting waveform relaxation convergence properties to the
А
-stability
of multiratc integration
methods
J. White and F. Odcb
497
MONTE
CARLO SIMULATIONS AND TECHNIQUES
Quantum transport: novel approaches in the formulation and applications to quantum-based solid-state
devices
F.A. Buot and K.L. Jensen
509
Monte Carlo technique for simulation of high energy electrons
M. Ncdjalkov and P. Vitanov
525
Iteration approach for solving the inhomogencous Boltzmann equation
P. Vitanov and M. Ncdjalkov
531
Monte Carlo approach to the quantum origin of shot noise suppression in transport through microstruc-
turcs
L.Y. Chen, G.
Levine,
J.
Yang and
CS.
Ting
539
Monte Carlo simulation of SiGe/Si MESFETs
M.Gokhalc, A.F.M. Anwar, R.D. Carrol and F.C. Jain
547
PHYSICAL ASPECTS
A numerical study of the dependence of unity gain bandwidth fT on polysilicon emitter in bipolar
transistors
E.F.
Chor
and L.S. Tan
553
Effects of junctions on conduction properties of GaAs
n-i
-η
structures including deep levels
K.Horio and H.Yanai
563
Discretization methods and physical models for simulating leakage currents in semiconductor devices
with application to modeling trcnch-DRAM cells
J.B. Johnson and S.H. Voldman
573
SOFTWARE FORUM
Inverse modelling of amorphous silicon solar cell timc-of-flight transients
A.A.
Buykx,
H.H.
Wcntinck, W.
Crans
and J.W.
Metselaar
589
MUSIC
-
a multigrid simulator for
1С
fabrication processes
S. Mijalkovic, D. Pantic, Z. Prijic, S. Mitrovic and
N.
Stojadinovic
599
GaAs
CCD
charge transfer simulation
Richard E.Poore and Peter B.Koscl
611
Advanced device modelling at Philips: the CURRY package
A.
Heringa,
M.M.A.Dricssen. J.M.F.Peters and W.H.A.
Schilders
621
Status of the device simulator PRISM
W.
Schoenmaker,
R.
Vankcmmcl,
R.
Cartuyvcls,
W.
Magnus, Bert Tijskcns and Kristin
de
Meyer
631
Author Index to Volume
10
641
Subject Index to Volume
10 643
|
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spelling | NASECODE Conference 7 1991 Copper Mountain, Colo. Verfasser (DE-588)1400159-7 aut NASECODE VII transactions selected papers from the seventh International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits, Copper Mountain, Colorado, USA, April 1991 ed. by John J. H. Miller London u.a. James & James u.a. 1991 VI S., S. 205 - 645 graph. Darst. txt rdacontent n rdamedia nc rdacarrier Compel 10,4 Literaturangaben. - Einzelaufnahme eines Zs.-Bandes Mathematisches Modell Integrated circuits Mathematical models Congresses Numerical analysis Congresses Semiconductors Mathematical models Congresses Integrierte Schaltung (DE-588)4027242-4 gnd rswk-swf Numerische Mathematik (DE-588)4042805-9 gnd rswk-swf Halbleiterbauelement (DE-588)4113826-0 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 1991 Copper Mountain Colo. gnd-content Halbleiterbauelement (DE-588)4113826-0 s Numerische Mathematik (DE-588)4042805-9 s DE-604 Integrierte Schaltung (DE-588)4027242-4 s Miller, John J. Sonstige (DE-588)106662562 oth Digitalisierung TU Muenchen application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=003466099&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
spellingShingle | NASECODE VII transactions selected papers from the seventh International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits, Copper Mountain, Colorado, USA, April 1991 Mathematisches Modell Integrated circuits Mathematical models Congresses Numerical analysis Congresses Semiconductors Mathematical models Congresses Integrierte Schaltung (DE-588)4027242-4 gnd Numerische Mathematik (DE-588)4042805-9 gnd Halbleiterbauelement (DE-588)4113826-0 gnd |
subject_GND | (DE-588)4027242-4 (DE-588)4042805-9 (DE-588)4113826-0 (DE-588)1071861417 |
title | NASECODE VII transactions selected papers from the seventh International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits, Copper Mountain, Colorado, USA, April 1991 |
title_auth | NASECODE VII transactions selected papers from the seventh International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits, Copper Mountain, Colorado, USA, April 1991 |
title_exact_search | NASECODE VII transactions selected papers from the seventh International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits, Copper Mountain, Colorado, USA, April 1991 |
title_full | NASECODE VII transactions selected papers from the seventh International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits, Copper Mountain, Colorado, USA, April 1991 ed. by John J. H. Miller |
title_fullStr | NASECODE VII transactions selected papers from the seventh International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits, Copper Mountain, Colorado, USA, April 1991 ed. by John J. H. Miller |
title_full_unstemmed | NASECODE VII transactions selected papers from the seventh International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits, Copper Mountain, Colorado, USA, April 1991 ed. by John J. H. Miller |
title_short | NASECODE VII transactions |
title_sort | nasecode vii transactions selected papers from the seventh international conference on the numerical analysis of semiconductor devices and integrated circuits copper mountain colorado usa april 1991 |
title_sub | selected papers from the seventh International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits, Copper Mountain, Colorado, USA, April 1991 |
topic | Mathematisches Modell Integrated circuits Mathematical models Congresses Numerical analysis Congresses Semiconductors Mathematical models Congresses Integrierte Schaltung (DE-588)4027242-4 gnd Numerische Mathematik (DE-588)4042805-9 gnd Halbleiterbauelement (DE-588)4113826-0 gnd |
topic_facet | Mathematisches Modell Integrated circuits Mathematical models Congresses Numerical analysis Congresses Semiconductors Mathematical models Congresses Integrierte Schaltung Numerische Mathematik Halbleiterbauelement Konferenzschrift 1991 Copper Mountain Colo. |
url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=003466099&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
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