Materials aspects of GaAs and InP based structures:
Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Englewood Cliffs, NJ
Prentice Hall
1991
|
| Schriftenreihe: | Prentice Hall advanced reference series
|
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | Literaturangaben |
| Beschreibung: | XVII, 606 S. graph. Darst. |
| ISBN: | 0133468267 |
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Datensatz im Suchindex
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| adam_text | AT&T MATERIALS ASPECTS OF GAAS AND INP BASED STRUCTURES V. SWAMINATHAN
AT&T BELT LABORATORIES BREINIGSVIL/E, PENNSYLVANIA A. T. MACRANDER
ARGONNE NATIONAL LABORATORY ARGONNE, ILLINOIS M PRENTICE HALL, ENGLEWOOD
CLIFFS, NEW JERSEY 07632 CONTENTS PREFACE XV CHAPTER 1 INTRODUCTION 1
1.1 EMERGENCE OF GAAS AND INP 1 1.2 BONDING AND CRYSTAL STRUCTURE 2
1.2.1 FRACTIONAL IONIC CHARACTER IN BONDING IN III-V SEMICONDUCTORS, 3
1.2.2 BRILLOUIN ZONES, 4 1.3 ENERGY BAND STRUCTURE 5 1.3.1 THE K-P
METHOD, 6 1.4 ENERGY BAND STRUCTURE OF ALLOYS 9 1.4.1 MATERIAL
PARAMETERS OF ALLOY SEMICONDUCTORS, 10 V VI CONTENTS 1.5 TABLES OF
MATERIAL PROPERTIES 14 1.5.1 BINARY COMPOUNDS, 14 1.5.2 ALLOY
SEMICONDUCTORS, 25 REFERENCES 40 CHAPTER 2 CRYSTAL GROWTH 43 2.1 GROWTH
OF BULK CRYSTALS 43 2.7.7 PHASE EQUILIBRIA, 44 2.1.2 CRYSTAL GROWTH
TECHNIQUES, 47 2.1.3 CRYSTALLINE IMPERFECTIONS, 56 2.2 LIQUID PHASE
EPITAXY 78 2.2.7 CRYSTAL GROWTH APPARATUS, 79 2.2.2 THERMODYNAMIC
PRINCIPLES OF LPE GROWTH, 83 2.2.3 CRYSTAL GROWTH KINETICS, 100 2.2.4
CRYSTAL GROWTH OF TERNARY AND QUATERNARY ALLOYS, 103 2.2.5 SURFACE
MORPHOLOGY, 111 2.2.6 CRYSTAL GROWTH OF HIGH PURITY EPITAXIAL LAYERS,
114 2.3 TRICHLORIDE VAPOR PHASE EPITAXY 116 2.3.7 INTRODUCTION, 116
2.3.2 CRYSTAL GROWTH OF GAAS AND INP, 117 2.3.3 CRYSTAL GROWTH OF GALNAS
AND GALNASP, 120 2.4 HYDRIDE VAPOR PHASE EPITAXY 122 2.4.7 INTRODUCTION,
122 CONTENTS VII 2.4.2 BASIC CHEMISTRY AND CRYSTAL GROWTH, 122 2.4.3
SURFACE PRESERVATION AND REACTOR DESIGN FOR ABRUPT INTERFACES, 128 2.5
METAL-ORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD) 131 2.5.7 INTRODUCTION,
131 2.5.2 REACTOR DESIGN, 133 2.5.3 MODELS FOR CRYSTAL GROWTH, 134 2.5.4
INDIUM DEPLETION, PARASITIC REACTIONS, LOW-PRESSURE MOCVD, AND CRYSTAL
GROWTH IN INP, GALNAS, AND GALNASP, 136 2.5.5 CRYSTAL GROWTH OF
SEMI-INSULATING FE-DOPED INP, 137 2.5.6 MOCVD SUMMARY, 138 2.6 MOLECULAR
BEAM EPITAXY 138 2.6.1 EFFUSION * ELLS, 139 2.6.2 ULTRA-HIGH-VACUUM
CRYSTAL GROWTH CONDITIONS, 140 2.6.3 SURFACE ANALYSIS, 141 2.6.4
SUBSTRATE PREPARATION, 142 2.6.5 CRYSTAL GROWTH PROCESS, 142 2.6.6
REFLECTION HIGH-ENERGY ELECTRON DIFFRACTION, 149 2.7 GAS SOURCE MBE AND
METAL-ORGANIC MBE 156 2.7.1 INTRODUCTION, 156 2.7.2 GAS SOURCE MBE, 156
2.7.3 METAL-ORGANIC MBE, 160 REFERENCES 165 VIII CONTENTS CHAPTER 3
X-RAY STRUCTURAL CHARACTERIZATION 181 3.1 X-RAY DOUBLE CRYSTAL
DIFFRACTOMETRY 181 3.1.1 INTRODUCTION, 181 3.1.2 INDIUM PHOSPHIDE
SUBSTRATES, 185 3.1.3 SINGLE EPITAXIAL LAYER MEASUREMENTS AND
COMPARISONS TO DYNAMICAL DIFFRACTION THEORY, 185 3.1.4 DOUBLE
HETEROSTRUCTURES, 201 3.1.5 SUPERLATTICES,204 3.1.6 HETEROEPITAXIAL
STRUCTURES WITH LARGE MISMATCHES, 212 3.2 OTHER X-RAY CHARACTERIZATION
METHODS 216 3.2.1 THE BACK REFLECTION LAUE METHOD, 216 3.2.2 THE BOND
METHOD, 217 3.2.3 POINT DEFECT INFLUENCES ON LATTICE PARAMETERS AND
X-RAY MEASUREMENTS, 219 3.2.4 X-RAY TOPOGRAPHY, 226 REFERENCES 229
CHAPTER 4 ELECTRICAL CHARACTERIZATION 233 4.1 INTRINSIC SEMICONDUCTORS
233 4.2 EXTRINSIC SEMICONDUCTORS 235 4.3 MOBILITY AND THE HALL EFFECT
237 4.4 CARRIER EMISSION AND CAPTURE 239 4.5 DEPLETION CAPACITANCE 242
4.6 DEEP LEVEL INFLUENCES ON DIODE CAPACITANCE 245 4.7 DEEP LEVEL
CHARACTERIZATION TECHNIQUES- TSCAP AND DLTS 249 4.8 OTHER DEEP LEVEL
CHARACTERIZATION TECHNIQUES- ADMITTANCE SPECTROSCOPY, CONSTANT
CAPACITANCE BIAS TRANSIENTS, AND CURRENT TRANSIENTS 254 4.9
SEMI-INSULATING MATERIAL 255 REFERENCES 262 OPTICAL CHARACTERIZATION 5.1
ABSORPTION 264 5.1.1 FUNDAMENTAL ABSORPTION, 265 5.1.2 MEASUREMENT
TECHNIQUES, 269 5.1.3 EXCITON ABSORPTION, 272 5.1.4 INTERVALENCE
ABSORPTION, 276 5.1.5 IMPURITY ABSORPTION, 276 5.1.6 FREE CARRIER
ABSORPTION, 278 5.1.7 OPTICAL ABSORPTION IN HEAVILY DOPED MATERIAL, 279
5.2 PHOTOLUMINESCENCE 281 5.2.7 RADIATIVE RECOMBINATION IN
SEMICONDUCTORS, 281 5.2.2 MINORITY CARRIER LIFETIME AND RADIATIVE
EFFICIENCY, 286 5.2.3 EXPERIMENTAL TECHNIQUES, 287 5.2.4 CARRIER
GENERATION AND DIFFUSION, 289 5.2.5 EXCITON RECOMBINATION, 297 X
CONTENTS 5.2.6 BAND-TO-BAND RECOMBINATION, 304 5.2.7 FREE-TO-BOUND
TRANSITIONS, 308 5.2.8 DONOR-TO-ACCEPTOR PAIR RECOMBINATION, 311 5.2.9
DEEP LEVEL TRANSITIONS, 318 5.2.10 NONRADIATIVE RECOMBINATION PROCESSES,
319 5.3 RAMAN SPECTROSCOPY 321 5.3.1 PRINCIPLE OF RAMAN SCATTERING, 321
5.3.2 EXPERIMENTAL ASPECTS, 322 5.3.3 FIRST-AND SECOND-ORDER RAMAN
SCATTERING, 323 5.3.4 SUPERLATTICES AND QUANTUM WELL STRUCTURES, 329
5.3.5 APPLICATIONS OF RS, 334 5.4 OTHER OPTICAL TECHNIQUES 342 5.4.1
INFRARED LOCALIZED VIBRATIONAL MODE ABSORPTION, 342 5.4.2
PHOTOCURRENTMEASUREMENTS, 345 5.4.3 REFLECTANCE MODULATION, 353 5.4.4
OPTICAL DETECTION OF MAGNETIC RESONANCE (ODMR), 361 REFERENCES 366
CHAPTER 6 IMPURITIES AND NATIVE DEFECTS 376 6.1 INTRODUCTION 376 6.2
CLASSIFICATION AND NOTATION 377 6.2.1 NATIVE POINT DEFECTS, 378 CONTENTS
6.3 SHALLOW LEVEL IMPURITIES 379 6.3.1 EFFECTIVE MASS THEORY, 380 6.3.2
EFFECTIVE MASS APPROXIMATION FOR ACCEPTOR STATE, 381 6.3.3 CHEMICAL
SHIFTS AND CENTRAL-CELL CORRECTIONS, 382 6.3.4 DONOR LEVELS ASSOCIATED
WITH SUBSIDIARY MINIMA, 385 6.3.5 EXPERIMENTAL METHODS TO DETERMINE
IMPURITY ENERGY LEVELS, 385 6.4 DEEP IMPURITIES AND NATIVE DEFECTS 386
6.4.1 OVERVIEW OF THEORY, 386 6.4.2 SP 3 BONDED IMPURITIES, 389 6.4.3 3D
TRANSITION METAL IMPURITIES, 397 6.5 CHEMISTRY OF IMPERFECTIONS 401
6.5.1 MASS ACTION RELATIONS, 402 6.5.2 EQUILIBRIUM OF IMPERFECTIONS:
BROUWER S APPROXIMATION, 403 6.5.3 REACTION CONSTANTS, 405 6.5.4
INTERSTITIAL AND ANTISTRUCTURE DISORDER, 410 6.5.5 PARTIAL EQUILIBRIUM:
THE SITUATION AFTER COOLING, 411 6.5.6 ALLOY SEMICONDUCTORS, 411 6.5.7
EXPERIMENTAL OBSERVATION OF POINT DEFECTS, 413 6.6 INCORPORATION OF
IMPURITIES 414 6.6.7 INTRODUCTION, 414 6.6.2 AMPHOTERIC DOPANTS, 420 XII
CONTENTS 6.6.3 INCORPORATION OF IMPURITIES DURING VPE GROWTH, 420 6.6.4
INCORPORATION OF IMPURITIES DURING MBE GROWTH, 424 6.6.5 UNINTENTIONAL
IMPURITIES, 426 6.7 DISLOCATIONS 427 6.7.1 TYPES AND STRUCTURES-PERFECT
DISLOCATIONS, 427 6.7.2 ELECTRICAL PROPERTIES OF DISLOCATIONS, 434 6.7.3
MECHANICAL PROPERTIES AND IMPURITY HARDENING, 437 6.7.4 DISLOCATION
GENERATION DURING GROWTH OF BULK CRYSTALS AND ITS REDUCTION, 450
REFERENCES 456 CHAPTER 7 DEFECTS AND DEVICE PROPERTIES 470 7.1
INTRODUCTION 470 7.2 INTERFACE EFFECTS 471 7.2.7 METAL-SEMICONDUCTOR
INTERFACE, 472 7.2.2 INSULATOR-SEMICONDUCTOR INTERFACE, 488 7.3
OUT-DIFFUSION OF IMPURITIES AND THERMAL CONVERSION 496 7.4 DEFECT
GETTERING 517 7.4.1 GETTERING AT IMPLANTATION DAMAGE, 517 7.4.2 STRAIN
INDUCED GETTERING, 519 7.4.3 HETEROSTRUCTURE GETTERING AT
HETEROSTRUCTURES INTERFACES, 520 7.4.4 GETTERING AT DISLOCATIONS, 521
7.4.5 GETTERING AT BACK SURFACE DAMAGE, 523 CONTENTS 7.5 PHOTONIC
DEVICES 524 7.5.1 RECOMBINATION ENHANCED DEFECT MOTION, 524 7.5.2
DEGRADATION IN LASERS AND LIGHT EMITTING DIODES, 527 7.5.3 PROCESS
RELATED EFFECTS, 540 7.5.4 DEGRADATION MODES IN PHOTODETECTORS, 549 7.6
MATERIAL ASPECTS OF FIELD EFFECT TRANSISTORS, 549 7.6.1 INTRODUCTION,
555 7.6.2 HETEROSTRUCTURE FIELD EFFECT TRANSISTORS, 555 7.6.3 DX
CENTERS, 561 7.6.4 GAASFETS, 565 REFERENCES 575 INDEX 593
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| publisher | Prentice Hall |
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| spelling | Swaminathan, V. Verfasser aut Materials aspects of GaAs and InP based structures V. Swaminathan ; A. T. Macrander Englewood Cliffs, NJ Prentice Hall 1991 XVII, 606 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Prentice Hall advanced reference series Literaturangaben Indiumphosphid (DE-588)4161535-9 gnd rswk-swf Halbleitertechnologie (DE-588)4158814-9 gnd rswk-swf Galliumarsenid (DE-588)4019155-2 gnd rswk-swf Galliumarsenid (DE-588)4019155-2 s Halbleitertechnologie (DE-588)4158814-9 s DE-604 Indiumphosphid (DE-588)4161535-9 s Macrander, A. T. Verfasser aut GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=003465878&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Swaminathan, V. Macrander, A. T. Materials aspects of GaAs and InP based structures Indiumphosphid (DE-588)4161535-9 gnd Halbleitertechnologie (DE-588)4158814-9 gnd Galliumarsenid (DE-588)4019155-2 gnd |
| subject_GND | (DE-588)4161535-9 (DE-588)4158814-9 (DE-588)4019155-2 |
| title | Materials aspects of GaAs and InP based structures |
| title_auth | Materials aspects of GaAs and InP based structures |
| title_exact_search | Materials aspects of GaAs and InP based structures |
| title_full | Materials aspects of GaAs and InP based structures V. Swaminathan ; A. T. Macrander |
| title_fullStr | Materials aspects of GaAs and InP based structures V. Swaminathan ; A. T. Macrander |
| title_full_unstemmed | Materials aspects of GaAs and InP based structures V. Swaminathan ; A. T. Macrander |
| title_short | Materials aspects of GaAs and InP based structures |
| title_sort | materials aspects of gaas and inp based structures |
| topic | Indiumphosphid (DE-588)4161535-9 gnd Halbleitertechnologie (DE-588)4158814-9 gnd Galliumarsenid (DE-588)4019155-2 gnd |
| topic_facet | Indiumphosphid Halbleitertechnologie Galliumarsenid |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=003465878&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
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