Advanced techniques for integrated circuit processing: 1 - 5 October 1990 Santa Clara, California
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| Format: | Buch |
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| Sprache: | English |
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Bellingham, Wash.
SPIE
1991
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| Schriftenreihe: | Society of Photo-Optical Instrumentation Engineers: Proceedings of SPIE
1392 |
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| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | Literaturangaben |
| Beschreibung: | X, 690 S. Ill., graph. Darst. |
| ISBN: | 0819404616 |
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| 245 | 1 | 0 | |a Advanced techniques for integrated circuit processing |b 1 - 5 October 1990 Santa Clara, California |c James Bondur ... chairs/eds. |
| 264 | 1 | |a Bellingham, Wash. |b SPIE |c 1991 | |
| 300 | |a X, 690 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 1 | |a Society of Photo-Optical Instrumentation Engineers: Proceedings of SPIE |v 1392 | |
| 500 | |a Literaturangaben | ||
| 650 | 4 | |a Integrated circuits |v Congresses | |
| 650 | 0 | 7 | |a Halbleitertechnologie |0 (DE-588)4158814-9 |2 gnd |9 rswk-swf |
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| 655 | 7 | |0 (DE-588)1071861417 |a Konferenzschrift |y 1990 |z Santa Clara Calif. |2 gnd-content | |
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| 830 | 0 | |a Society of Photo-Optical Instrumentation Engineers: Proceedings of SPIE |v 1392 |w (DE-604)BV000010887 |9 1392 | |
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Datensatz im Suchindex
| _version_ | 1804119746316075008 |
|---|---|
| adam_text | ADVANCED
TECHNIQUES
FOR INTEGRATED CIRCUIT PROCESSING
Volume
1392
CONTENTS
Conference Committee
.................................................................ix
PLENARY PAPERS
1392-PL01 From VLSI to
USLI:
the subhalf micron challenge
P. K. Chatterjee, Texas Instruments
Inc
....................................................2
1392-PL02 Precompetitive cooperative research: the culture of the
90s
W. C.
Holton,
Semiconductor Research Corp
.............................................27
INTRODUCTION TO SESSIONS
1, 2,
AND
3........................................35
SESSION
1
DIAGNOSTICS/PLASMA MODELING
1392-02
Evaluation of low-pressure silicon dry-etch processes with regard to
low-substrate degradation
M. Engelhardt, Siemens
AG (FRG)
......................................................38
1392-03
Characteristics of gate oxide surface material after exposure to magnetron-enhanced
reactive ion etching plasma
J. M. Webb, Z. H.
Amini,
Applied Materials,
Inc
...........................................47
1392-04
Simulation of ion-enhanced dry-etch processes (Invited Paper)
J. Pelka,
Fraunhofer-Institut für
Mikrostrakturtechnik (FRG)
.................................55
1392-05
Plasma modeling in microelectronic processing
M. Meyyappan, T. R. Govindan, J. P. Kreskovsky, Scientific Research Associates,
Inc
.............67
13924)6
Influence of sheath properties on the profile evolution in reactive ion etching processes
A. Fichelscher, I. W. Rangelow, Univ. of
Kassel (FRG);
A.
Stamm,
Plasma Technology Ltd. (FRG)
..........................................................77
1392-07
Oxygen reactive ion etching of polymers: profile evolution and process mechanisms
W.
Pilz,
J. janes, K. P.
Müller,
J. Pelka,
Fraunhofer-Institut für
Mikrostrakturtechnik (FRG)
.......84
1392-08
Progrese
of an advanced diffusion source plasma reactor
N.
M. Benjamin, B.
N.
Chapman, Lucas/Signatone Corp.; R. W. Boswell,
Australian National Univ. (Australia)
.....................................................95
1392-72
Contamination and damage of silicon surfaces during magnetron-enhanced reactive
ion etching in a single-wafer system
S. Tan, D. B.
Colavito,
IBM General Technology
Div
....................................... 106
1392-09
MTF of
photołi
thographic hologram
L. Guo, Y. Guo, X. Zhang, Sichuan Univ. (China)
......................................... 119
SESSION
2
IMAGE TRANSFER TECHNIQUES
1392-10
SPEEDXEt a profile simulator for etching and deposition (Invited Paper)
j. P. McVittie, J.
С
Rey,
A. J.
Banya,
M. M. IslamRaja, L. Y.
Cheng,
S. Ravi,
К. С
Saraswat,
Stanford Univ
....................................................................... 126
1392-11
Dry etching of high-aspect
ratio contact
holes
M. Wiepkirtg, M. LeVar», P.
Mayo,
Drytek/General Signal
.................................. 139
1392-12
Enhanced
pročet»
control of
submicron
contact definition
W. H. Ostrout, S.
Hunkler,
S. D.
Ward,
Motorok, Inc
..................................... 151
(continued)
ADVANCED
TECHNIQUES
FOR INTEGRATED CIRCUIT PROCESSING
Volume
1392
1392-13
Vertical oxide etching without inducing change in critical dimensions
A. Nagy,
Motorola, foe
............................................................... 165
1392-14
High-resolution tri-level process by
downstreanvmicrowave rf
-biased etching
I. W. Rangelow, Univ. of
Kassel (FRG).................................................. 180
1392-15
Plasma diagnostics as inputs to the modeling of the oxygen reactive ion etching of
multilevel resist structures
D. A. Hope, A. J. Hydes, T. I. Cox, V. G. Deshmukh, Royal Signals and
Radar Establishment (UK)
............................................................ 185
1392-16
Dry etching for silylated resist development
P. Laporte, Commissariat
a l Energie Atomique
(France);
L.
Van den hove, IMEC (Belgium);
Y.
Мекки,
TEGAL Corp
............................................................. 196
SESSION
3
PLASMA ETCH APPLICATIONS
1392-17
Single-crystal silicon trench etching for fabrication of highly integrated
circuits (Invited Paper)
M. Engelhardt, Siemens
AG (FRG)
.....................................................210
1392-18
Polysilicon etching for nanometer-scale features
J. Lajzerowicz, S. V.
Tedesco,
С.
Pierrat,
D. Muyard, M.
С.
Taccussel, P. Laporte,
LETI/Commissariat a l Energie Atomique (France)
........................................222
1392-19
Honeywell s
submicron polysilicon
gate process
L.
S.
Chan,
С. К.
Hertog,
D.
W.
Youngner, Honeywell Solid State Electronics Ctr
..............232
1392-20
Chlorine or bromine chemistry in
RIE
(reactive ion etching) Si-trench etching
I. W. Rangelow, A. Fichelscher, Univ. of
Kassel (FRG).....................................240
1392-21
LH electron cyclotron resonance plasma source
K. Kretschmer, G.
Lorenz,
G.
Gastrischer,
I.
Kessler,
P.
Baumann, Leybold
AG (FRG)
...........246
1392-22
Magnetically enhanced reactive ion etching of
submicron
silicon trenches
K. Cooper, B. Nguyen, J. Lin, B.
].
Roman, P.
Tobin,
W.
Ray, Motorola,
Inc
...................253
1392-23
Reactive ion etching of deep isolation trenches using sulfur hexafluoride, chlorine,
helium, and oxygen
T. M.
Krawiec,
N.
J. Giammarco,
ШМ
Corp
..............................................265
1392-24
Improvement in dry etching of tungsten features
M. Heitzmann, P. Laporte, E. Tabouret, Commissariat
a l Energie Atomique
(France)
............272
1392-25
SOG/PSG (spm-on-gLase/phoephosdlicate glass) etchback planariiation process for
1.0
μτη
CMOS technology
E. Bogle-Rohwer, j. Nuity, Drytek/General
Signai; W. Chu,
A. Cohen,
National Semiconductor Corp.
.........................................................280
1392-26
Enhanced etching of InP by cycling with sputter etching and reactive ion etching
A. T. Demos, H. S. Fogler, S. W. Pang,
M. E.
Eka, Univ.
of Michigan
.........................291
INTRODUCTION TO SESSIONS
4,5,6,
AND
7.....................................299
SESSION
4
REAL-TIME CONTROL ALGORITHMS
1392-2?
Business, manufacturing, and system integration issues in cluster tool process
control {Invited Paper)
D. Richardson, SEMATECH
..........................................................302
1392-28
Cluster tool software and hardware architecture (Invited Paper)
D. Huntky, Realtime Performance
Inc
...................................................315
ADVANCED
TECHNIQUES
FOR INTEGRATED CIRCUIT PROCESSING
Volume
1392
1392-29
Real-time automation of a dry etching system (Invited Paper)
R. H. McCafferty, IBM/General Technology
Div.
.........................................331
1392-30
Microcomputer-based real-time monitoring and control of single-wafer processing
J. R.
Hauser,
R. S. Gyurcsik,
North Carolina State Univ.
...................................340
1392-31
Application of adaptive network theory to dry-etch monitoring and control
V. G. Deshmukh, D. A. Hope, T. I. Cox, A. J. Hydes, Royal Signals and
Radar Establishment (UK)
............................................................352
1392-32
Real-time monitoring and control of plasma etching
S. W. Butler, K. J. McLaughlin,
T. F.
Edgar, I.
Trachtenberg, Univ.
of Texas/Austin
.............361
1392-33
Expert system and process optimization techniques for real-time monitoring and
control of plasma processes
J. Cheng, Z. Qian, K. B. Irani, H. Etemad,
M. E.
Elm, Univ. of Michigan
.......................373
SESSION
5
MACHINE PARAMETER ANALYSIS
1392-34
Fluid-flow-rate metrology: laboratory uncertainties and traceabilities (Invited Paper)
G. E. Mattingly, National Institute of Standards and Technology
.............................386
1392-35
Effects of environmental and installation-specific factors on process gas delivery via
mass-flow controller with an emphasis on real-time behavior (Invited Paper)
D. E. Gray,
N.
M. Benjamin, B.
N.
Chapman, Lucas/Signatone Corp
.........................402
1392-36
Monitoring and control of rf electrical parameters near plasma loads
P.
Rummel,
Comdel
Inc
...............................................................411
1392-37
New apparatus and method for fluid composition monitoring and control
J. Urmson, TeloSense Corp
............................................................421
1392-38
Measurements on the NIST GEC reference cell
J. R. Roberts, j. K. Olthoff, R. J. Van Brunt, J. R. Whetstone, National Institute
of Standards and Technology
..........................................................428
1392-39
Review of temperature measurements in the semiconductor industry
R. L. Anderson, SEMATECH
..........................................................437
SESSION
6
PLASMA PARAMETER ANALYSIS
1392-40
Applications of optical emission spectroscopy in plasma manufacturing
systems (Invited Paper)
G. G. Gifford,
ШМ
/East
Fishkill Facility
..................................................454
1392-41
Electrical probe diagnostics for processing discharges (Invited Paper)
T. D.
Mantei, Univ.
of Cincinnati
.......................................................466
1392-42
ie-eitu measurements of radicals and particles in a selective silicon oxide etching
plasma (Invited Paper)
J. Singh,
ШМ
/East
Fishkffl Facility.
.....................................................474
1392-43
Microwave
interferometrie
measurements of process plasma density
C. CheahJ. L. Cecchi.J. L. Stevens, Princeton Univ
.......................................487
1392-44
Characterization of plasma processes with optical emission spectroscopy
D. S. Malchow, EG&G Princeton Applied Research
.......................................498
1392-45
East-injection Langmuir probe for process diagnostic and control
R. Patrick, P. Schoenborn, LSI Logic Corp.; S.
Linder,
H. P.
Bakes,
ETH-Hoenggerberg (Switzerland)
.......................................................506
(continued)
ADVANCED
TECHNIQUES
FOR INTEGRATED CIRCUIT PROCESSING
Volume
1392
SESSION
7
ETCH PARAMETER ANALYSIS
1392-46
Radial »on energy measurements in an electron cyclotron resonance
reactor (Invited Paper)
J. A. O Neill, IBM/General Technology
Div.;
W.
M.
Holber,
J.
Caughman,
IBM/Thomas
J.
Watson
Research
Ctr
...................................................516
1392-47
Process control sensor development for the automation of single-wafer
processors (Invited Paper)
J. W. Hosch, Texas Instruments
Inc
.....................................................529
1392-49
Theoretical and practical aspects of real-time Fourier imaging
D. S. Grimard, F. L. Terry, jr., M.
E. Eira, Univ.
of Michigan
................................535
1392-50
Etch tailoring dirough flexible end-point detection
D.
Angeli,
G. S.
Oehrlein, IBM/Thomas J. Watson
Research Ctr
.............................543
1392-51
Real-time, in-eitu measurement of film thickness and uniformity during plasma
ashing of photoresist
J.
T. Davies, T. Metz,
Branson International Plasma Corp.; R.
N.
Savage, H. Simmons,
SC Technology
......................................................................551
1392-52
In-eitu film thickness measurements using acoustic techniques
S. Bhardwaj, B. T. Khuri-Yakub, Stanford Univ
...........................................555
1392-68
Instantaneous etch rate measurement of thin transparent films by
interferometry
for use in an algorithm to control a plasma etcher
H. L. Mishurda,
N.
Hershkowitz, Univ. of Wisconsin/Madison
..............................563
1392-69
Phase object imaging inside the Airy disc
V. P. Tychinsky, Moscow Institute for
Radioengineering
(USSR)
.............................570
INTRODUCTION TO SESSION
8..................................................573
SESSION
8
MULTICHAMBER AND IN-SITU PROCESSING OF ELECTRONIC MATERIALS
1392-70
Pattern etching and selective growth of GaAs by in-situ electron-beam lithography
using an oxidized thin layer (Invited Paper)
K. Akita, Y. Sugimoto, M.,Taneya, Y. Hiratani, Y. Ohki, H. Kawanishi, Y. Katayama,
Optoelectronics Technology Research Lab. (Japan)
........................................576
1392-55
Focused ion-beam vacuum lithography of InP with an ultrathin native oxide resist
Y. Wang, H. Temkin, L. R. Harriott, R.
Hamm, AT&T
Bell Labs
............................588
1392-71
Selective metal deposition using low-dose focused ion-beam patterning
R. L.
Kuběna,
F.
P. Stratton, Hughes Research Labs.; T. M. Mayer,
Sandia
National Labs
.........595
1392-54
Multichamber reactive ion etching processing for III-V optoelectronic devices
M. A. Rothrnan, j. A. Thompson,
С
A. Anniento,
GTE Labs.
Inc
...........................598
1392-53
Formation of heteroetructure devices in a multichamber processing environment with
in-vacuo surface analysis diagnostics and in-eitu process monitoring (Invited Paper)
G. Lucovsky, S. S. Kim, J. T. Fitch,
С
Wang, North Carolina State Univ
......................605
1392-59
Research sputter cluster tool
P. j. Clarke, Sputtered Films
bic
........................................................617
1392-56
Self-aligned synthesis of titanium suicide by multipulse excimer laser irradiation
V. Craciun, D. Craciun, I.
N.
Mihailescu, Institute of Atomic Physics (Romania);
A. V. Kmmichev, V. I. Konov, S. A. Uglov, Institute of General Physics (USSR)
...............625
1392-57
Laser processing of germanium
V. Craciun, I.
N.
Mihailescu, Institute of Atomic Physics (Romania);
A. Luches, Univ.
di Lecce
(Italy);
S. G.
Kiyak,
G.
N.
Mikhailova, Institute of
General
Physics (USSR)
....................629
ADVANCED
TECHNIQUES
FOR INTEGRATED CIRCUIT PROCESSING
Volume
1392
INTRODUCTION TO SESSION
9..................................................635
SESSION
9
MANUFACTURING ISSUES
1392-60
Defect reduction strategies for
submicron,
manufacturing: tools and methodologies
R. S. Coleman, P. R. Chittuii,
KLA
Instruments Corp
......................................638
1392-62
Fourier transform infrared spectrophotometry for thin film monitors:
computer and equipment integration for enhanced capabilities
J.
N.
Cox, J. Sedayao, G. S. Shergill, R.
Villasol,
Intel Corp.; D. M. Haaland,
Sandia
National Labs
.................................................................650
1392-63
In-line supervisory control in a photolithographic workcell
Z. Ling, S. Leang, C. J. Spanos, Univ. of California/Berkeley
................................660
1392-64
Variability in thickness measurements using x-ray fluorescence technique
I. C.
Baltazar,
M. G. Mena, Intel Philippines
Manufacturing Co.
(Philippines)
...................670
1392-65
Defect reduction strategies for process control and yield improvement
D. R.
Liljegren, KLA
Instruments, France
SA
(France)
.....................................681
Addendum
.........................................................................688
Author Index
.......................................................................689
ADVANCED
TECHNIQUES
FOR INTEGRATED CIRCUIT PROCESSING
Volume
1392
AUTHOR INDEX
Akrta,
К
576
Amim,
Zahrá H
. 47
Anderson,
Richard L
, 437
Angell,
David,
543
Armiento.
Craig A
, 598
Baltazar
Inmaculada
С
, 670
Bartes
Henry
Ρ,
506
Banya.
Α
J
. 126
Baumann, P, 246
Benjamin, Neil
M
, 95, 402
Bhardwaj. Sanjay.
555
BogleRohwer, Elizabeth.
280
Boswell Rod
W
, 95
Butler. Stephanie
W
. 359
Castrischer,
G
. 246
Caughman, John.
516
Cecchi. Joseph
L
, 487
Chan. Lap
S
232
Chapman, Brian
N , 95, 402
Chatterjee. PallabK.
2
Cheah. Chun Wah,
487
Cheng, Jie.
371
Cheng.
L Y.
126
Chittun, Prasanna
R
, 638
Chu. Wileen
280
Čiarke, Peter J,
617
Cohen, Andrew 280
Colavito,
О В
. 106
Coleman Robyn
S
638
Cooper, Kent.
253
Cox,
J H..
650
Cox.
T
1.185.350
Craciun. Doma
625
Craciun, Valentín,
625. 629
Davies John T
, 551
Demos,
Alexandr
os T
., 291
Deshmukh. V G
, 185. 350
Edgar. Thorn
F
359
Erta.
Michael
Ε ,
291
,
371
,
535
Engelhar«.
Manfred. 38, 210
Etemad H.
371
Fichełscher,
Andreas, 77 240
Fitch,
J T
, 606
Fogtef,
H S
291
Gemmarco.
Nicholas J
. 265
GrHord, George G
, 454
Govindan.
T R
, 67
Gray,
David
E.,
402
Grimard,
Dennis
S.,
535
Giro, Lu-Rong, 119
Guo, Yong-Kang,
119
Gyurcsik, R. S.,
338
Haaland, David M.,
650
Hamm,
Robert,
588
Harriott, Lloyd R„ 588
Hauser, John
R.,
338
Heìtzmann, Michel,
272
Hershkowitz, Noah,
563
Hertog.
Craig
К.,
232
Hiratani,
Y.,
576
Holber, William
M.,
516
Holton,
William
С,
27
Hope,
DA.,
185,350
Hosch, Jimmy
W.,
529
Hunkler, Sean,
151
Huntley, Dave,
313
Hydes, A J.,
185, 350
Irani, Keki
В.,
371
islamRaja, M. M.,
126
Janes, Joachim,
84
Katayama, Yoshifumi,
576
Kawenishi, Hidenori,
576
Kessler,
I.,
246
Khuri-Yakub.
Β. Τ ,
555
Kim, Sane S.,
605
Kiyak.
S. G
, 629
Konov,
Vitalii
1
, 625
Krawiec.
Theresa M.,
265
Kreskovsky, John P.,
67
Kretschmer, K.-H.,
246
Kuběna,
Randall L,
595
Kushner, Mark J., Addendum
Kuzmichev, A V.,
625
Lajzerowicz, Jean,
222
Lapone,
Philippe,
196, 222, 272
LeVan, M.,
139
Leang, Sovarong,
660
Liljegren,
Douglas
R
, 681
Lin, Jung-Hui,
253
Linder,
Stefan,
506
Ltng, Zhi-Mm,
660
Lorenz,
Gerhard,
246
Luches,
Armando,
629
Lucovsfcy, Gerald.
605
(continued)
ADVANCED
TECHNIQUES
FOR INTEGRATED CIRCUIT PROCESSING
Volume
1392
Malchow, Douglas S.,
498
Mantei,
Thomas D.,
466
Mattingly,
G. E.,
386
Mayer,
T. M.,
595
Mayo, Phyllis,
139
McCafferty, Robert H.,
329
Mclaughlin, Kevin J.,
359
McVittie, James P.,
126
Melaku, Y.,
196
Mena, Manolo
G.,
670
Metz, Thomas,
551
Meyyappan, M.,
67
Mihailescu, ton
N.. 625, 629
Mikhailova, G. N.,
629
Mishurda,
Helen L,
563
Müller,
Karl P.,
84
Muyard, D.,
222
Nagy, Andrew,
165
Nelson,
Craig R., Addendum
Nguyen, Bich-Yen,
253
Nuîty, James,
280
O Neill,
James
Α.,
516
Oenrlein,
Gottleib
S.,
543
Ohki, Y.,
576
Olthoff, J. K.,
428
Ostrout,
Wayne
H.,
151
Pang,
Stella W.,
291
Panov, Vladimir
I., Addendum
Patrick, Roger,
506
Pelka, Joachim,
55, 84
Pierrat,
Christophe,
222
Pilz,
Wolfgang,
84
üian, Zhaogang, 371
Rarsgeiow, Iwilo
W.,
77, 180, 240
Ravi, S.,
126
Ray, Wayne,
253
ñey,
J. C,
126
Richardson, David,
300
Roberts, James R.,
428
Roman, Bernard J.,
253
Rothman, Mark
Α.,
598
Rummel,
Paul,
411
Saraswat, Krishna C,
126
Savage, Richard N.,
551
Savinov, Sergey V., Addendum
Schoenborn, Philippe,
506
Sedayao, J.,
650
Sheehan, John R., Addendum
Shergill, Gurmeet S.,
650
Simmons, Horace,
551
Singh, Jyothi,
474
Sommerer, Timothy J., Addendum
Spa
nos. Costas
J.,
660
Stall, Richard
Α.,
Addendum
Stamm,
Α.,
77
Stevens,
J. L,
487
Stratton,
F. P.,
595
Sugimoto, Yoshimasa,
576
Tabouret,
Evelyne,
272
Taccussel, M. C,
222
Tan,
Swie-ln,
106
Taneya, M„
576
Tedesco,
Serge
V.,
222
Temkin,
Henryk, 588
Terry, Fred
L.
,
Jr.,
535
Thompson, John
Α.,
598
Tobin,
Phil,
253
Trachtenberg,
Isaac,
359
Turner, Terry R., Addendum
Tychinsky, Vladimir P.,
570
Uglov, S.
Α.,
625
Urmson, John,
421
Van Brunt,
R. J.,
428
Van den hove, Luc,
196
Vasil ev, Sergey I., Addendum
Villasol, R.,
650
Wang, Cheng,
605
Wang, Yuh-Un,
588
Ward, Steven D.,
151
Webb, Jennifer M.,
47
Whetstone, James R.,
428
Wiepking, Mark,
139
Yaminsky, Igor V., Addendum
Youngner,
D. W.,
232
Zhang, Xiaoch
un,
119
|
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| genre | (DE-588)1071861417 Konferenzschrift 1990 Santa Clara Calif. gnd-content |
| genre_facet | Konferenzschrift 1990 Santa Clara Calif. |
| id | DE-604.BV005526264 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T16:31:05Z |
| institution | BVB |
| isbn | 0819404616 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-003462926 |
| oclc_num | 507122977 |
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| physical | X, 690 S. Ill., graph. Darst. |
| publishDate | 1991 |
| publishDateSearch | 1991 |
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| publisher | SPIE |
| record_format | marc |
| series | Society of Photo-Optical Instrumentation Engineers: Proceedings of SPIE |
| series2 | Society of Photo-Optical Instrumentation Engineers: Proceedings of SPIE |
| spelling | Advanced techniques for integrated circuit processing 1 - 5 October 1990 Santa Clara, California James Bondur ... chairs/eds. Bellingham, Wash. SPIE 1991 X, 690 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Society of Photo-Optical Instrumentation Engineers: Proceedings of SPIE 1392 Literaturangaben Integrated circuits Congresses Halbleitertechnologie (DE-588)4158814-9 gnd rswk-swf Integrierte Schaltung (DE-588)4027242-4 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 1990 Santa Clara Calif. gnd-content Integrierte Schaltung (DE-588)4027242-4 s Halbleitertechnologie (DE-588)4158814-9 s DE-604 Bondur, James Sonstige oth Society of Photo-Optical Instrumentation Engineers: Proceedings of SPIE 1392 (DE-604)BV000010887 1392 Digitalisierung TU Muenchen application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=003462926&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Advanced techniques for integrated circuit processing 1 - 5 October 1990 Santa Clara, California Society of Photo-Optical Instrumentation Engineers: Proceedings of SPIE Integrated circuits Congresses Halbleitertechnologie (DE-588)4158814-9 gnd Integrierte Schaltung (DE-588)4027242-4 gnd |
| subject_GND | (DE-588)4158814-9 (DE-588)4027242-4 (DE-588)1071861417 |
| title | Advanced techniques for integrated circuit processing 1 - 5 October 1990 Santa Clara, California |
| title_auth | Advanced techniques for integrated circuit processing 1 - 5 October 1990 Santa Clara, California |
| title_exact_search | Advanced techniques for integrated circuit processing 1 - 5 October 1990 Santa Clara, California |
| title_full | Advanced techniques for integrated circuit processing 1 - 5 October 1990 Santa Clara, California James Bondur ... chairs/eds. |
| title_fullStr | Advanced techniques for integrated circuit processing 1 - 5 October 1990 Santa Clara, California James Bondur ... chairs/eds. |
| title_full_unstemmed | Advanced techniques for integrated circuit processing 1 - 5 October 1990 Santa Clara, California James Bondur ... chairs/eds. |
| title_short | Advanced techniques for integrated circuit processing |
| title_sort | advanced techniques for integrated circuit processing 1 5 october 1990 santa clara california |
| title_sub | 1 - 5 October 1990 Santa Clara, California |
| topic | Integrated circuits Congresses Halbleitertechnologie (DE-588)4158814-9 gnd Integrierte Schaltung (DE-588)4027242-4 gnd |
| topic_facet | Integrated circuits Congresses Halbleitertechnologie Integrierte Schaltung Konferenzschrift 1990 Santa Clara Calif. |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=003462926&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
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