Molecular beam epitaxy: proceedings of the Third International Symposium held in Velico Tarnovo, Bulgaria, October 2 - 7, 1989
Gespeichert in:
| Format: | Buch |
|---|---|
| Sprache: | English |
| Veröffentlicht: |
Zürich, Switzerland [u.a.]
Trans Tech Publ.
1991
|
| Schriftenreihe: | Materials science forum
69 |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | Literaturangaben |
| Beschreibung: | 200 S. Ill., graph. Darst. |
| ISBN: | 0878496149 |
Internformat
MARC
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| 245 | 1 | 0 | |a Molecular beam epitaxy |b proceedings of the Third International Symposium held in Velico Tarnovo, Bulgaria, October 2 - 7, 1989 |c ed. by G. Minchev ... |
| 264 | 1 | |a Zürich, Switzerland [u.a.] |b Trans Tech Publ. |c 1991 | |
| 300 | |a 200 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 1 | |a Materials science forum |v 69 | |
| 500 | |a Literaturangaben | ||
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| 655 | 7 | |0 (DE-588)1071861417 |a Konferenzschrift |y 1989 |z Weliko Tarnowo |2 gnd-content | |
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| 700 | 1 | |a Minčev, G. |e Sonstige |4 oth | |
| 830 | 0 | |a Materials science forum |v 69 |w (DE-604)BV001902147 |9 69 | |
| 856 | 4 | 2 | |m Digitalisierung TU Muenchen |q application/pdf |u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=002956901&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |3 Inhaltsverzeichnis |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-002956901 | ||
Datensatz im Suchindex
| _version_ | 1804118918594297856 |
|---|---|
| adam_text | TABLE
OF
CONTENTS
I. MBE GROWTH
Preparation and Characterizations of High Quality InGaAs/GaAs Strained
Multi-Quantum Wells Grown by MBE
J.M. Zhou, H.Q.
Hou
and Y. Huang
1
Influence of Growth Parameters on the Surface Morphology of
MBE Grown GaAs and
Al Ga
As Layers
S.V.
Ivanov,
P.S.
Kop ev and N.N. Ledentsov
9
Optical Switching of Double-Barrier Resonant Tunneling AlxGaj.x As/GaAs Diode
S.V.
Ivanov,
P.S.
Kop ev,
V.l.
Korolkov, N.N. Ledentsov, M.E. Lutsenko,
B.Ya. Meltser, T.S. Tabarov and
S.V.
Shaposhnikov
13
Sb Delta-Type Doping in Si-MBE Superlattices
A.I. Nikiforov, B.Z.
Kanter,
S.I. Stenin and
S.V.
Rubanov
17
Molecular Beam Heteroepitaxy on Silicon Substrates
A. Zehe
21
MBE Growth, Properties and Applications of Epitaxial Dielectric Fluoride
Films on Semiconductors
N.S.
Sokolov
29
Evaporation and Incorporation of Gallium Atoms and Ions during Si MBE with
a Sublimating Source
A. Kozhukhov
37
Comparison of Growth Kinetics and Source Material Utilization Efficiency
in MBE under Conventional and ALE Conditions
J. Aarik, J.
Lembra
and H. Siimon
41
PED Mechanism Studied by Moleculardynamic Computer Simulation
B. Fritzsch, B. Wolf and A. Zehe
45
Growth of Aluminum and Copper on Silicon by Molecular Beam Epitaxy
M.
Büschel,
T. Gantz,
A. Thomas and A. Zehe
49
II. EQUIPMENT DESIGN AND INSTRUMENTATION
MBE System for Research
M. Laznicka
53
Optical Simulation of the Effusion Molecular Beams in Epitaxy Technology
B. Adamczyk, L. Michalak and E. Radzka
57
The Liquid Metal Ion Source for MBE of Silicon
V.S. Avrutin and A.F. Vyatkin
61
Prior to Growth Examinations of the Quality of GaAs Substrates
M. Cukr, J.
Kub,
J. Pastrnak, J. Oswald and V.
Miskova
65
ΙΠ.
MBE GROWN DEVICES
The Advantages of Selectively Delta-Doped
ΙΠ
-V
Heterostructures for
HEMT
Applications
P.S.
Kop ev,
A.A.
Budza,
S.V.
Ivanov, N.N.
Ledentsov,
B.Ya. Meltser, M.Yu. Nadtochy and
V.M.
Ustinov
67
Ш
-V
Heterostructure Lasers
with
Short
Period
Superlattice
Recombination
Region
A.M.
Vasiľev,
A.A.
Dzamashvili,
S.V.
Ivanov,
P.S.
Kop
ev,
N.N.
Ledentsov,
B.Ya. Meltser and
V.M.
Ustinov
AlGaAs/GaAs Heterojunction
Photodiodes
Grown by MBE
F.
Riesz,
В.
Szentpali,
I.
Mojzes, A.Salokatve, H. Asonen gl
and M. Pessa
An Extension of the
Interfacial
Layer Theory for Mixed Phase Metal-
Semiconductor Contact
„,
T.Q. Tuy, I. Mojzes, B.
Szentpali
and I. Cseh
Electrophysical Parameters of the Metal-Semiconductor Interface in
MBE and VPE Grown GaAs Schottky Contacts
ZsJ.
Horváth,
В.
Kovács,
M. Nemeth-Sallay and B. Pecz yy
The Dependence of
Schottky
Barrier Height of Metal-Semiconductor Contacts
on the Ratio of
Interfacial
Area Occupied by Different Metal Components
T.Q. Tuy, I. Mojzes and B.
Szentrali
ιυι
MBE Grown Planar Doped Barrier Diodes for Microwave Purposes
V.V. Tuyen, B.
Szentpali,
I. Mojzes, A. Salokatve, H. Asonen and
M. Pessa 1W
IV. PROPERTIES OF MBE
-
GROWN FILMS
Interface Symmetry and Heteroepitaxy
A.V. Andreeva
MBE Growth and Investigation of Heteroepitaxial CdTe, ZnTe Layers and
CdTe-ZnTe Superlattices
Ju.M. Tchekochinin, S.M. Roomyantseva and V.S. Roodnev
Raman Scattering by Phonons in Short-Period GaAs/AlAs Superlattices
I. Gregora,
V. Vorlicek, K.
Kokešova
and K. Ploog
Temperature Dependence of Raman Scattering in Monocrystals and Epitaxial
Thin Films of ZnSe
W.
Bala,
M.
Kozielski
and
M.
Drozdowski 123
Low Teperature
Photoluminescence
of ZnSe Strained Thin Layers Grown on
GaAs by MBE
W. Bala
127
Computer Simulation of
Interdiffusion
Processes in II-VI Superlattices
V.A. Poteschkov, Y.M. Shchekochihin and E.B. Tsaviova *3
1
MBE Growth and Properties of Si/GeSi Superlattices on Si (111)
V.A. Markov,
Ο,Ρ.
Pchelakov,
A.B.
Talochkin, V.N. Sherstyakova and
V.N. Shumskiy
135
The Pair-Doped Delta-Superlattice: An Inner Probe to Measure Monolayer
Doping Fluctuations in Semiconductors
A. Zehe
139
Eu2·*
and Sm2+ Ions as a Photoluminescent Probe in Epitaxial CaF2 Films
on Semiconductors
S.V.
Novikov, N.S.
Sokolov
and N.L. Yakovlev l51
Low-Temperature Anomalies of 2D Electrons n-ALGai v As/GaAs Transfer
Phenomena x
V.l.
Kadushkin and A.P. Senichkin
155
In Situ
REM
Study of Silicon Surface During MBE Processes
A.V. Latyshev and
A.B.
Krasilnikov
159
Investigation
of
Sublimation
Process of (111) and
(100)
CdTe Films
by RHEED Intensity Oscillation
S.A.
Dvoretskiy, V.V. Kalinin, V.D. Kuzmin and Y.G. Sidorov
163
Composition of Oxides on
(100)
GaAs Produced by Oxygen Ion Bombardment
M. Laznicka
167
Characteristics and Application of Thin Epitaxial Dielectrics Formed
byMBE
M. Maeder, F. Sellam and A.
Zehe 171
SEM
Investigation of Defects on InP
R.
Fellenberg
and W. Erfurth
175
Characterization of MBE Grown Si Doped GaAs Layers on
(100)
GaAs and Si
Substrates by
Photoluminescence
J.
Pastrnak, A. Bosacchi, A. Salokatve, J. Varrio and M. Laznicka
179
Ultrahigh Vacuum System
V.l.
Kratenko
183
GaAs and GaSb Treatment for MBE
L.D. Pramatarova, G.M. Minchev, H. Naradikjan and L.M. Trendafilov
189
Author Index
201
|
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| genre_facet | Konferenzschrift 1989 Weliko Tarnowo |
| id | DE-604.BV004806922 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T16:17:56Z |
| institution | BVB |
| isbn | 0878496149 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-002956901 |
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| physical | 200 S. Ill., graph. Darst. |
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| series | Materials science forum |
| series2 | Materials science forum |
| spelling | Molecular beam epitaxy proceedings of the Third International Symposium held in Velico Tarnovo, Bulgaria, October 2 - 7, 1989 ed. by G. Minchev ... Zürich, Switzerland [u.a.] Trans Tech Publ. 1991 200 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Materials science forum 69 Literaturangaben Molekularstrahlepitaxie (DE-588)4170399-6 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 1989 Weliko Tarnowo gnd-content Molekularstrahlepitaxie (DE-588)4170399-6 s DE-604 Minčev, G. Sonstige oth Materials science forum 69 (DE-604)BV001902147 69 Digitalisierung TU Muenchen application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=002956901&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Molecular beam epitaxy proceedings of the Third International Symposium held in Velico Tarnovo, Bulgaria, October 2 - 7, 1989 Materials science forum Molekularstrahlepitaxie (DE-588)4170399-6 gnd |
| subject_GND | (DE-588)4170399-6 (DE-588)1071861417 |
| title | Molecular beam epitaxy proceedings of the Third International Symposium held in Velico Tarnovo, Bulgaria, October 2 - 7, 1989 |
| title_auth | Molecular beam epitaxy proceedings of the Third International Symposium held in Velico Tarnovo, Bulgaria, October 2 - 7, 1989 |
| title_exact_search | Molecular beam epitaxy proceedings of the Third International Symposium held in Velico Tarnovo, Bulgaria, October 2 - 7, 1989 |
| title_full | Molecular beam epitaxy proceedings of the Third International Symposium held in Velico Tarnovo, Bulgaria, October 2 - 7, 1989 ed. by G. Minchev ... |
| title_fullStr | Molecular beam epitaxy proceedings of the Third International Symposium held in Velico Tarnovo, Bulgaria, October 2 - 7, 1989 ed. by G. Minchev ... |
| title_full_unstemmed | Molecular beam epitaxy proceedings of the Third International Symposium held in Velico Tarnovo, Bulgaria, October 2 - 7, 1989 ed. by G. Minchev ... |
| title_short | Molecular beam epitaxy |
| title_sort | molecular beam epitaxy proceedings of the third international symposium held in velico tarnovo bulgaria october 2 7 1989 |
| title_sub | proceedings of the Third International Symposium held in Velico Tarnovo, Bulgaria, October 2 - 7, 1989 |
| topic | Molekularstrahlepitaxie (DE-588)4170399-6 gnd |
| topic_facet | Molekularstrahlepitaxie Konferenzschrift 1989 Weliko Tarnowo |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=002956901&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
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