Proceedings of the Eighth European Conference on Chemical Vapour Deposition: Glasgow, Scotland, 9 - 13 September 1991 = Actes de la 8ème Conférence Européenne sur les Dépôts Chimiques en Phase Gazeuse
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| Format: | Tagungsbericht Buch |
| Sprache: | Undetermined |
| Veröffentlicht: |
Les Ulis
Ed. de Physique
1991
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| Schriftenreihe: | [Journal de physique / 4 ]
1991,2 : Supplément au Journal de physique II, no. 7 |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | XX, 984 S. graph. Darst. |
| ISBN: | 2868831605 |
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| 245 | 1 | 0 | |a Proceedings of the Eighth European Conference on Chemical Vapour Deposition |b Glasgow, Scotland, 9 - 13 September 1991 = Actes de la 8ème Conférence Européenne sur les Dépôts Chimiques en Phase Gazeuse |c ed. by Michael L. Hitchman ... |
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Datensatz im Suchindex
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| adam_text | Volume 2
JOURNAL DE PHYSIQUE IV
Colloque C2
Supplement au Journal de Physique II, n° 7
Septembre 1991
Proceedings of the
Eighth European Conference on
Chemical Vapour Deposition
Actes de la
8eme Conference Europeenne sur les
Depots Chimiques en Phase Gazeuse
£URO CJA
WGHT
Glasgow, Scotland, 9-13 September 1991
Edited by : Michael L Hitchman
Nicholas J Archer
lei editions
physique
Avenue du Hoggar,
Zone Industrielle de Courlaboeuf,
B P 112,
F-91944 Les Ulis Cedex A, France
CONTENTS
FUNDAMENTAL S
C WERNER - Numerical modelling of CVD processes and equip
ment (Invited Lecture) C2-3
C R KLEIJN - The modeling of LPCVD in single-wafer reactors
as a tool for process optimization and equipment design
(Keynote Lecture) C2-19
X W LI, B Z GUO, S H LIN and H MA - Angular distribution
of desorbed molecules C2-33
Y WANG, C CHAUSSAVOINE and F TEYSSANDIER - 2D modelling
of silicon chemical vapor deposition in an impinging jet
reactor C2-39
L J de LEGfe and M HENDRIKS - Characterization and optimiza
tion of the LPCVD silicon oxynitride process, using the design
of experiments method C2-47
Y EGASHIRA, T SORITA, S SHIGA, K IKUTA and H KOMIYAMA -
Mechanism of step coverage formation of Si02 films from
TEOS and effects of gas phase additives studied by
micro/macrocavity method C2-55
M GUEYE, E SCHEID, P TAURINES, P DUVERNEUIL,
D BIELLE-DASPET and J P COUDERC - Silicon deposition from
disilane : experimental study and modelling C2-63
C AZZARO, P DUVERNEUIL and J P COUDERC - A novel wafer
cage for better uniformity of phosphorus doped silicon
layers : experimental study and modelling C2-71
C AZZARO, E SCHEID, D BIELLE-DASPET, P DUVERNEUIL and
P BOUDRE - An understanding of in situ boron doped poly-
silicon films by characterization and simulation C2-79
L -S HONG, Y SHIMOGAKI and H KOMIYAMA - Gas phase reaction
in systhesis of SiC films by low pressure chemical vapor
deposition from Si2H6 and C2H2 at 873 K C2-87
XIV
Y SHIMOGAKI, T SAITO, F TADOKORO and H KOMIYAMA - The
reactivity and molecular size of film precursors during
chemical vapor deposition of WSix C2-95
v
T KIMURA and T TOJIMA - Numerical model of a fluidized bed
reactor for polycrystalline silicon production-estimation of
CVD and fines formation C2-103
M PONS, M SANCANDI and J F NOWAK - Transport phenomena
and reactor design for chromium carbide deposition C2-111
S PROUHET, A GUETTE and F LANGLAIS - An experimental
kinetic study of boron nitride CVD from BF3-NH3-Ar mixtures C2-119
M SASAKI, A OHKUBO and T HIRAI - Gas flow simulation of
chemical vapour infiltration in a vertical hot-wall reactor C2-127
J H SCHOLTZ, J E GATICA, H J VILJOEN and V HLAVACEK -
Analysis of transport phenomena in the coating of fibers by
CVD C2-135
E FITZER, W FRITZ and G SCHOCH - The chemical vapour impre
gnation of porous solids Modelling of the CVI- process C2-143
CHARACTERISATION
W RICHTER and P KURPAS - In-situ optical characterisation of
CVD processes (Invited Lecture) C2-153
M E PEMBLE, D S BUHAENKO, H PATEL, A STAFFORD and
A G TAYOR - Some insight into the nature of the surface che
mical processes involved in the MOVPE growth of GaAs from
arsine and trimethyl- or triethyl-gallium (Keynote Lecture) C2-155
H PATEL and ME- PEMBLE - Reflection-absorption IR spectros
copy as an in-situ probe of the surface chemistry of semicon
ductor growth intermediates : the adsorption of trimethyl-
gallium at GaAs (100) surfaces at 300 K C2-167
H CHEHOUANI, B ARMAS, C COMBESCURE, S BENET and
S BRUNET - Experimental study and numerical simulation of
hydrodynamics and heat transfer in a cold-wall CVD reactor C2-175
M TAMME, R KAMILLI, P PADUSCHEK, P MONTGOMERY and
S ILLSLEY - In situ ellipsometry, a measurement technique
for dynamic film characterization and process
development C2-183
PAC GROENEN, JGA HOELSCHER and H H BRONGERSMA - Ana-
lysis of CVD by surface analysis techniques and in-situ mass
spectrometry C2-185
W AHMED, J S F00RD, N K SINGH and H D PILKINGTON - The
application of a supersonic molecular beam scattering system
to understanding CVD processes C2-193
E M KELDER, P J VAN DER PUT, JGM BECHT and J SCH00NMAN -
Deposition of cubic boron monophosphide from BBr3 and PBr3 :
a reaction mechanism C2-201
XV
E V SHALAEVA, M V KUZNETSOV, R S BARYSHEV and
B V MITROFANOV - Synthesis and structure of nonstoichiometric
S-NbNltr films C2-209
H B de BREE, M H HAAFKENS, M M MICHORIUS and L R WOLFF -
Nucleation and growth in TiN CVD on graphite substrates C2-217
A FIGUERAS, R RODRIGUEZ-CLEMENTE, S GAREL1K, J SANTISO,
B ARMAS, C COMBESCURE, A MAZEL, Y KIHN and J SfeVELY -
Influence of H2 partial pressure on the morphology and crys
tallization of SiC layers obtained by LPCVD using tetramethyl-
silane C2-225
D GUORUX, C LXHUA, Y BAILIANG and L MINGDENG - A study of
a-Fe203 ultrafine particle films C2-233
MOCVD
K F JENSEN, A ANNAPRAGADA, K L HO, J -S HUH, S PATNAIK
and S SALIM - Metalorganic chemical vapor deposition :
examples of the influence of precursor structure on film
properties (Invited Lecture) C2-243
A C JONES - Metalorganic precursors for semiconductors
requirements and recent developments (Keynote Lecture) C2-253
R D PILKINGTON, P A JONES, W AHMED, R D TOMLINSON,
A E HILL, J J SMITH and R NUTTALL - Low pressure MOCVD of
copper based compounds for photovoltaic applications C2-263
JAT NORMAN, B A MURATORE, P N DYER, D A ROBERTS and
A K HOCHBERG - New OMCVD precursors for selective copper
metallization C2-271
B LECOHIER, J -M PHILIPPOZ, B CALPINI, T STUMM and
H VAN DEN BERGH - The influence of water vapor on the
selective low pressure CVD of copper C2-279
A HARSTA and J -O CARLSSON -Thermodynamic modeling of
MOCVD of the superconducting phase in the Bi-Sr-Ca-Cu-0 sys
tem : influence of metal precursor and oxygen source C2-287
CIMA SPEE, E A VAN DER ZOUWEN-ASSINK, K TIMMER,
A MACKOR and H A MEINEMA - Deposition of Y-Ba-Cu-O-films by
MO-CVD using a novel barium precursor C2-295
C PIJOLAT, L BRUNO and R LALAUZE - Low pressure chemical
vapor deposition of tin oxide thin films from an organometal-
lic compound Application to gas detection C2-303
W KERN, A CHEN and N SANDLER - MOCVD of tantalum pentoxide
for large-area ULSI circuit wafers C2-311
D W SNYDER, P J SIDES, E I KO and S MAHAJAN - Growth^
kinetics, crystal structure, and morphology of OMVPE-grown
homoepitaxial CdTe C2-319
M B AMJOUD, A REYNES, R MORANCHO, P MAZEROLLES and
R CARLES - Comparative study of GexCx_x films prepared by
MOCVD from tetraethylgermanium and tetravinylgermanium C2-327
XVI
ACTIVATED METHODS
O LEHMANN and M STUKE - Generation of three-dimensional
free-standing micro-objects by laser chemical processing
(Invited Lecture) C2-337
A GICQUEL and Y CATHERINE - Plasmas; : sources of excited,
dissociated and ionized species Consequences for chemical
vapor deposition (CVD) and for surface treatment (Keynote
Lecture) C2-343
C LICOPPE, C MERIADEC, J FLICSTEIN, Y I NISSIM and
J M MOISON - Surface mechanisms in the UVCVD of Si02 films C2-357
S MOTOJIMA and S MANO - Preparation of SiC films by photo
chemical vapour deposition using a D? lamp C2-365
V SHANOV, B IVANOV and C POPOV - Laser induced direct
writing of aluminium C2-373
W ZHANG, M LELOGEAIS and M DUCARROIR - Kinetic approach of
the deposition of silicon carbide based films obtained by
PACVD C2-381
B WISNIEWSKI, J DURAND and L COT - Copper and copper oxide
thin films obtained by metalorganic microwave plasma CVD C2-389
K -T RIE, J WOHLE and A GEBAUER - Plasma assisted CVD
using metallo-organic compounds as precursors C2-397_
N AZEMA, J DURAND, R BERJOAN, J L BALLADORE and L COT -
Influence of excitation frequency on oriented (1010) growth
of aluminium nitride thin films by P3CVD C2-405
C FAKIH, R S BES, B ARMAS and D THENEGAL - Plasma deposi
tion of silicon nitride C2-413
H DEL PUPPO, T SINDZINGRE, L PECCOUD and J DESMAISON -
Downstream microwave plasma enhanced chemical vapour deposi
tion of Si02 using 02/SiH4 and N20/SiH4 mixtures C2-421
T KOJIMA, M MATSUKATA, M ARAO, M NAKAMURA and
Y MITSUYOSHI - Development of a plasma jetting fluidized
bed reactor C2-429
A TISSIER, J KHALLAAYOUNE, A GERODOLLE and B HUIZING -
Planarized intermetal dielectric deposited by DECR CVD C2-437
ENVIRONMENTAL ISSUES AND LARGE SCALE PROCESSES
R H WALLING and R H MOSS - Safety and environmental aspects
of CVD (Invited Lecture) C2-447
M L HAMMOND - CVD exhaust-safety and environmental^sanity
(Keynote Lecture) C2-449
W W CRAWFORD, J R ZUBER and W R KNOLLE - Use of the HAZOP
analysis for evaluation of CVD reactors C2-459
K BRENNFLECK and H REICH - CVD of SiC in large coating
vessels C2-467
XVII
/
T KOJIMA and 0 MORISAWA - Optimum process conditions for
stable and effective operation of a fluidized bed CVD reactor
for polycrystalline silicon production C2-475
M MATSUKATA, T ODAGIRI and T KOJIMA - Characterization of
polycrystalline silicon particles produced via CVD from mono-
silane in a fluidized bed reactor C2-483
R LUNDBERG, L PEJRYD and G LOOF - Chemical vapour infil
tration (CVI) of silicon carbide fibre preforms C2-491
S I CHI JO, K TAMURA, T TAKANO, A NAKAO arid T HIRAHARA -
Properties and practical results of tungsten carbide coating
produced by low temperature CVD process C2-497
L M JOHNSON, M SAUNDERS and D B MEAKIN - High quality
oxides for large area displays C2-505
COATINGS AND CERAMICS
E FITZER - Chemical vapour deposition - A review of 25 years
experience (Invited Lecture) C2-509
F SCHMADERER, R HUBER, H OETZMANN and G WAHL - High-Tc-
superconductors prepared by CVD (Keynote Lecture) C2-539
R PORAT - CVD coating of ceramic layers on ceramic cutting
tool materials C2-549
A OSADA, M DANZINGER, R HAUBNER and B LUX - Grain refine
ment of CVD TiC layers by A1C13, ZrCl4 and BC13 impurities C2-557
K BARTSCH, A LEONHARDT and E WOLF - Composition oscilla
tions in hard material layers deposited from the vapour phase C2-563
M DANZINGER, J PENG, R HAUBNER and I) LUX - Influence of
CH4 and Ar on the morphologies of A120,-CVD coatings C2-571
M DANZINGER, R HAUBNER and B LUX - Influence of etching
the TiC underlayer with CH4/A1C13/H2 on the CVD formation of
kappa-Al203 C2-579
D SELBMANN, A: LEONHARDT and E WOLF - Chemical vapour
deposition of Al-containing TiC- and T:i (0,C) - hard coatings C2-587
J P DEKKER, P J VAN DER PUT, R R NIHUWENHUIS, H J VERINGA
and J SCHOONMAN - Chemical vapor precipitation of submicron
titanium nitride powder C2-593
M LELOGEAIS, M DUCARROIR and R BERJOAN - Adherence and
properties of silicon carbide based films on steel C2-601
S B KIM, C B IN, S K CHOI and S S CHUN - The effects of
metallic interlayer formation on the adhesion properties of
PACVD-TiN films on tool steel C2-603
JGM BECHT, A BATH, E HENGST, P J VAN DER PUT and
J SCHOONMAN - Deposition of boron nitride by plasma enha
ced CVD using borane amine C2-617
XVIII J
J SLIFIRSKI, G HUCHET and F TEYSSANDIER - Titanocene-
dichloride as a metalorganic source for titanium carbide C2-625
B DROUIN, L VANDENBULCKE, J P PITON and R HERBIN - On the
optimization of the microstructure and the adherence of
TiC/TiN coatings deposited at moderate temperature for milling
applications C2-633
A DELBLANC BAUER and J -O CARLSSON - Corrosion of chemi
cally vapour deposited titanium carbide on an inert
substrate C2-641
M SASAKI and T HIRAI - Fabrication and evaluation of SiC/C
functionally gradient material C2-649
C COURTOIS, J DESMAISON and H TAWIL - Protection against
oxidation of C/SiC composites oy chemical vapour deposition of
titanium diboride : deposition kinetics and oxidation
behaviour of films prepared from TiCl,t/BC1,/H2 mixtures C2-657
B ASPAR, B ARMAS, C COMBESCURE and D THENEGAL - Chemical
vapour deposition of the Al-O-N system C2-665
F SAUGNAC, F TEYSSANDIER and A MARCHAND - New compounds
obtained by LPCVD in the B-C-N chemical system C2-673
M H VIDAL-SfeTIF and J L GfeRARD - LPCVD SiC coatings on
unidirectional carbon fibre-yarns : application to aluminium
matrix composites C2-681 -
Y G ROMAN, D P STINTON and T M BESMANN - Development of
high density fiber reinforced silicon carbide FCVI composites C2-689
K -L CHOY and B DERBY - The CVD of TiB2 protective coating
on SiC monofilament fibres C2-697
M NADAL and F TEYSSANDIER - ChemicaL vapor infiltration of
3D fibrous carbon preforms by zirconium carbide C2-705
E FITZER, H OETZMANN, F SCHMADERER and G WAHL - The Ba-
problem in CVD-YBa2Cu307_SHTC superconductors C2-713
J PENG, M DANZINGER, R HAUBNER and B LUX - Preparation of
YBa2Cu307 x films by spray pyrolysis C2-721
Y V LAKHOTKIN and R V KUKUSHKIN - Growth mechanism and
structure peculiarities of tungsten-rhenium coatings C2-729
M S TSIRLIN and S U RYBAKOV - Influence of gas phase compo
sition on the formation of Ti-Si coatings on niobium C2-735
MICROELECTRONIC MATERIALS
M R GOULDING - The selective epitaxial growth of silicon
(Invited Lecture) C2-745
Dw- MCNEILL, Y LIANG, J H MONTGOMERY, H S GAMBLE and B M ARMSTRONG - Epitaxial silicon growth by rapid thermal
CVD C2-779
XIX
R KIRCHER, M FURUNO, J MUROTA and S ONO - Low-temperature
epitaxy and in-situ doping of silicon films C2-787
J MUROTA, M KATO, R KIRCHER and S ONO - Low-temperature
silicon and germanium CVD in ultraclean environment C2-795
J MUROTA, M SAKURABA, N MIKOSHIBA and S ONO - Control of
germanium atomic layer formation on silicon using flash heat
ing in germanium CVD C2-803 •
W AHMED, R D PILKINGTON and D B MEAKIN - UHV chemical
vapour deposition of undoped and in-situ doped polysilicon
films C2-809
M SARRET, A LIBA, 0 BONNAUD, M MOKHTARI and B FORTIN -
Conditions for obtaining in-situ phosphorus doped LPCVD poly
silicon layers with high conductivity onto glass substrates C2-817
F H RUDDELL, B M ARMSTRONG and H S GAMBLE - Growth mecha
nisms of epitaxial silicon carbide produced using rapid
thermal CVD C2-823
H KANOH, 0 SUGIURA, S FUJIOKA, Y ARAMAKI, T HATTORI and
M MATSUMURA - Low-temperature chemical-vapor-deposition of
silicon nitride C2-831
H TREICHEL, R BRAUN, Z GABRXC, 0 SPINDLER and
A GSCHWANDTNER - Planarized low-stress oxide/nitride passiva
tion for ULSI devices C2-839
S E ALEXANDROV and A Y KOVALGIN - Remote plasma chemical
vapour deposition of silicon nitride films C2-847
C A VAN DER JEUGD, G J LEUSINK, GCAM JANSSEN and
S RADELAAR - A study on the thermodynamics and kinetics of
tungsten deposition by WF6 and GeH4 C2-849
A BOUTEVILLE, T CHARRIER, J C REMY, J PALLEAU and
J TORRES - Selective RTLPCVD of tuncisten by silane
reduction on patterned PPQ/Si wafers C2-857
K A GESHEVA, V ABROSIMOVA and G D BEISHKOV - CVD carbonyl
thin films of tungsten and molybdenum and their silicides - a
good alternative to CVD fluoride tungsten technology C2-865
E BLANQUET, N THOMAS, P SURYANARAYANA, C VAHLAS,
C BERNARD and R MADAR - Processing of WSi2 films by low
pressure chemical vapor deposition from in situ chlorination
of metal C2-873
C LAMPE-ONNERUD, A HARSTA and U JANSSON - CVD of copper
using CuCl as precursor C2-881
H DALLAPORTA, Z HAMMADI, R PIERRISNARD and A CROS -
Chemical vapor deposition of copper for microelectronic
devices based on silicon C2-889
P B GRABIEC and J M LYSKO - Microengineering - the new
application of chemical vapor deposition C2-897
XX
DIAMOND, OPTOELECTRONIC AND OTHER MATERIALS
RJM GRIFFITHS - MOCVD - the route to high performance com
pound semiconductor optoelectronic devices (Invited Lecture) C2-905
P K BACHMANN, D LEERS and D U WIECHERT - Diamond chemical
vapour deposition (Keynote Lecture) C2-907
C JOHNSTON, C F AYRES and P R CHALKER - Evaluating the
influence of growth parameters on CVD diamond deposition
using factorial analysis C2-915
S OKOLI, R HAUBNER and B LUX - Influence of the filament
material on low-pressure hot-filament CVD diamond deposition C2-923
C JOHNSTON, A CROSSLEY, A M JONES, P R CHALKER,
F L CULLEN and I M BUCKLEY-GOLDER - High temperature stress
measurements in CVD diamond films C2-931
S F MITURA - Electron significance to diamond synthesis in
plasma enhanced CVD process C2-939
A BOUMAZA, H M YATES, L JAMES, I A PATTERSON,
D J COLE-HAMILTON and J O WILLIAMS - Atmospheric pressure
metal-organic chemical vapour deposition (APMOCVD) for the
growth of ZnSe epilayers on (lOO)-GaAs substrates using
diethyl-zinc (DEZn) and hydrogen selenide (H2Se) C2-945
HLM CHANG, Y GAO, J GUO, C M FOSTER, H YOU, T J ZHANG
and D J LAM - Heteroepitaxial growth of Ti02, V02, and
Ti02 /V02 multilayers by MOCVD C2-953
W LUO, P REN, C TAN and Z TAN - Studies of ln203 - Sn
films grown by MOCVD C2-961
W LUO, C TAN, P REN and Z TAN - So (P, As or F) - doped
Sn02 films prepared by MOCVD C2-962
D GUORUI - A study of gas sensing properties of oxide multi
layer thin films C2-963
AUTHOR INDEX C2-969
|
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| author_sort | European Conference on Chemical Vapour Deposition Glasgow |
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| bvnumber | BV004803735 |
| ctrlnum | (OCoLC)243716270 (DE-599)BVBBV004803735 |
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| genre | (DE-588)1071861417 Konferenzschrift 1991 Glasgow gnd-content |
| genre_facet | Konferenzschrift 1991 Glasgow |
| id | DE-604.BV004803735 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T16:17:52Z |
| institution | BVB |
| institution_GND | (DE-588)1222817-5 |
| isbn | 2868831605 |
| language | Undetermined |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-002954346 |
| oclc_num | 243716270 |
| open_access_boolean | |
| owner | DE-12 DE-384 DE-703 DE-83 |
| owner_facet | DE-12 DE-384 DE-703 DE-83 |
| physical | XX, 984 S. graph. Darst. |
| publishDate | 1991 |
| publishDateSearch | 1991 |
| publishDateSort | 1991 |
| publisher | Ed. de Physique |
| record_format | marc |
| series2 | [Journal de physique / 4 ] |
| spelling | European Conference on Chemical Vapour Deposition 8 1991 Glasgow Verfasser (DE-588)1222817-5 aut Proceedings of the Eighth European Conference on Chemical Vapour Deposition Glasgow, Scotland, 9 - 13 September 1991 = Actes de la 8ème Conférence Européenne sur les Dépôts Chimiques en Phase Gazeuse ed. by Michael L. Hitchman ... Actes de la 8ème Conférence Européenne sur les Dépôts Chimiques en Phase Gazeuse Les Ulis Ed. de Physique 1991 XX, 984 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier [Journal de physique / 4 ] 1991,2 : Supplément au Journal de physique II, no. 7 Kondensationsreaktion (DE-588)4313125-6 gnd rswk-swf CVD-Verfahren (DE-588)4009846-1 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 1991 Glasgow gnd-content Kondensationsreaktion (DE-588)4313125-6 s DE-604 CVD-Verfahren (DE-588)4009846-1 s Hitchman, Michael L. Sonstige oth 4 ] [Journal de physique 1991,2 : Supplément au Journal de physique II, no. 7 (DE-604)BV000018697 1991,2 HEBIS Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=002954346&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Proceedings of the Eighth European Conference on Chemical Vapour Deposition Glasgow, Scotland, 9 - 13 September 1991 = Actes de la 8ème Conférence Européenne sur les Dépôts Chimiques en Phase Gazeuse Kondensationsreaktion (DE-588)4313125-6 gnd CVD-Verfahren (DE-588)4009846-1 gnd |
| subject_GND | (DE-588)4313125-6 (DE-588)4009846-1 (DE-588)1071861417 |
| title | Proceedings of the Eighth European Conference on Chemical Vapour Deposition Glasgow, Scotland, 9 - 13 September 1991 = Actes de la 8ème Conférence Européenne sur les Dépôts Chimiques en Phase Gazeuse |
| title_alt | Actes de la 8ème Conférence Européenne sur les Dépôts Chimiques en Phase Gazeuse |
| title_auth | Proceedings of the Eighth European Conference on Chemical Vapour Deposition Glasgow, Scotland, 9 - 13 September 1991 = Actes de la 8ème Conférence Européenne sur les Dépôts Chimiques en Phase Gazeuse |
| title_exact_search | Proceedings of the Eighth European Conference on Chemical Vapour Deposition Glasgow, Scotland, 9 - 13 September 1991 = Actes de la 8ème Conférence Européenne sur les Dépôts Chimiques en Phase Gazeuse |
| title_full | Proceedings of the Eighth European Conference on Chemical Vapour Deposition Glasgow, Scotland, 9 - 13 September 1991 = Actes de la 8ème Conférence Européenne sur les Dépôts Chimiques en Phase Gazeuse ed. by Michael L. Hitchman ... |
| title_fullStr | Proceedings of the Eighth European Conference on Chemical Vapour Deposition Glasgow, Scotland, 9 - 13 September 1991 = Actes de la 8ème Conférence Européenne sur les Dépôts Chimiques en Phase Gazeuse ed. by Michael L. Hitchman ... |
| title_full_unstemmed | Proceedings of the Eighth European Conference on Chemical Vapour Deposition Glasgow, Scotland, 9 - 13 September 1991 = Actes de la 8ème Conférence Européenne sur les Dépôts Chimiques en Phase Gazeuse ed. by Michael L. Hitchman ... |
| title_short | Proceedings of the Eighth European Conference on Chemical Vapour Deposition |
| title_sort | proceedings of the eighth european conference on chemical vapour deposition glasgow scotland 9 13 september 1991 actes de la 8eme conference europeenne sur les depots chimiques en phase gazeuse |
| title_sub | Glasgow, Scotland, 9 - 13 September 1991 = Actes de la 8ème Conférence Européenne sur les Dépôts Chimiques en Phase Gazeuse |
| topic | Kondensationsreaktion (DE-588)4313125-6 gnd CVD-Verfahren (DE-588)4009846-1 gnd |
| topic_facet | Kondensationsreaktion CVD-Verfahren Konferenzschrift 1991 Glasgow |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=002954346&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| volume_link | (DE-604)BV000018697 |
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