Surface electronic transport phenomena in semiconductors:
Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Oxford
Clarendon Press
1991
|
| Schriftenreihe: | Series on semiconductor science and technology
2 |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | Aus dem Russ. übers. - Literaturangaben |
| Beschreibung: | XII, 220 S. graph. Darst. |
| ISBN: | 0198520344 |
Internformat
MARC
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Datensatz im Suchindex
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| adam_text | SURFACE ELECTRONIC TRANSPORT PHENOMENA IN SEMICONDUCTORS V. N.
DOBROVOLSKY PROFESSOR OF SEMICONDUCTORS INSTITUTE OF SEMICONDUCTORS
UKRAINIAN ACADEMY OF SCIENCE AND V. G. LITOVCHENKO HEAD OF DEPARTMENT
INSTITUTE OF SEMICONDUCTORS UKRAINIAN ACADEMY OF SCIENCE CLARENDON PRESS
OXFORD 1991 CONTENTS SYMBOLS IX ELECTROSTATIC INTERACTION BETWEEN
DIFFERENT PARTS OF AN MIS STRUCTURE AND ITS INFLUENCE ON CHARGE CARRIER
TRANSPORT 1.1. QUALITATIVE CONSIDERATIONS 1 1.2. CONCENTRATIONS AND
DENSITIES OF ELECTRON AND HOLE CURRENTS 4 1.3. THE FIELD EFFECT 9 1.4.
ELECTRIC FIELD AND FERMI QUASI-LEVEL IN AN MIS TRANSISTOR WITH AN
INVERSION CHANNEL 15 1.5. CURRENT FLOWING IN THE INVERSION CHANNEL OF A
TRANSISTOR 21 1.6. FIELD CONTROL OF THE CHARGE CARRIER AMBIPOLAR DRIFT
VELOCITY 33 2. HALL EFFECT AND MAGNETORESISTANCE 2.1. SURFACE MOBILITY
43 2.2. CURRENT DENSITY IN AN INVERSION CHANNEL UNDER THE EFFECT OF
TRANSVERSE MAGNETIC FIELD 44 2.3. GENERAL PROPERTIES OF THE PLANE
ELECTRIC FIELD IN A CHANNEL 48 2.4. HALL EMF 56 2.5. HALL CURRENT 59
2.6. MAGNETORESISTANCE 70 2.7. ANISOTROPIC CONDUCTIVITY: DETERMINATION
OF THE CONDUC- TIVITY AND RESISTIVITY TENSOR COMPONENTS 72 2.8. HALL
EFFECT IN A TRANSISTOR CHANNEL FOR ARBITRARY DRAIN VOLTAGE 74 2.9.
NON-UNIFORM CHANNEL 79 2.10. EVALUATION OF THE SURFACE CONTRIBUTION FROM
DATA OBTAINED IN HALL AND CONDUCTANCE MEASUREMENTS 95 2.11. HALL EFFECT
AND MAGNETORESISTANCE IN CHANNELS OF ARBITRARY SHAPE 108 EFFECTS CAUSED
BY THE LORENTZ FORCE ACTING ALONG THE SURFACE S NORMAL 3.1. MONOPOLAR
CONDUCTIVITY 122 3.2. INTRINSIC CONDUCTION 125 VLLL CONTENTS ENERGY
QUANTIZATION AND ELECTRON AND HOLE TRANSPORT IN SURFACE CHANNELS 4.1.
CONDITIONS FOR ELECTRON ENERGY QUANTIZATION TO BE OBSERVED IN SCR
CHARACTERISTICS 137 4.2. QUANTUM LEVELS IN A SURFACE POTENTIAL WELL 144
4.3. MECHANISMS OF CHARGE CARRIER SCATTERING IN THE SURFACE CHANNEL 149
4.4. QUANTUM HALL EFFECT AND MAGNETORESISTANCE 162 5. TWO-DIMENSIONAL
EXCITONS AND NON-EQUILIBRIUM PLASMA 5.1. GENERAL PROPERTIES OF
TWO-DIMENSIONAL AND QUASI-TWO- DIMENSIONAL EXCITONS 172 5.2. BEHAVIOUR
OF EHD IN THE TWO-DIMENSIONAL CASE 176 5.3. SOME EXPERIMENTAL RESULTS
184 SURFACE REGION PARAMETERS FOR LOW CHARGE CARRIER DENSITIES 6.1.
CRYSTALLIZATION OF WIGNER ELECTRON GAS 200 6.2. PECULIARITIES OF WIGNER
CRYSTALLIZATION FOR A TWO- DIMENSIONAL ELECTRON SYSTEM 203 6.3.
THEORETICAL ANALYSIS OF A TWO-DIMENSIONAL WIGNER CRYSTAL 207 6.4.
EXPERIMENTAL STUDY OF TWO-DIMENSIONAL ANDERSON LOCAL- IZATION AND
MOTT-ANDERSON TRANSITIONS 212 6.5. TWO-DIMENSIONAL CONDUCTANCE THROUGH
SURFACE STATES; THE INFLUENCE OF IMPURITIES 216 INDEX 219
|
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| id | DE-604.BV004703140 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T16:16:21Z |
| institution | BVB |
| isbn | 0198520344 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-002889116 |
| oclc_num | 630314472 |
| open_access_boolean | |
| owner | DE-91 DE-BY-TUM DE-384 DE-11 |
| owner_facet | DE-91 DE-BY-TUM DE-384 DE-11 |
| physical | XII, 220 S. graph. Darst. |
| publishDate | 1991 |
| publishDateSearch | 1991 |
| publishDateSort | 1991 |
| publisher | Clarendon Press |
| record_format | marc |
| series | Series on semiconductor science and technology |
| series2 | Series on semiconductor science and technology |
| spelling | Dobrovolsky, V. N. Verfasser aut Surface electronic transport phenomena in semiconductors V. N. Dobrovolsky and V. G. Litovchenko Oxford Clarendon Press 1991 XII, 220 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Series on semiconductor science and technology 2 Aus dem Russ. übers. - Literaturangaben Transporteigenschaft (DE-588)4185924-8 gnd rswk-swf Halbleiteroberfläche (DE-588)4137418-6 gnd rswk-swf Halbleiteroberfläche (DE-588)4137418-6 s Transporteigenschaft (DE-588)4185924-8 s DE-604 Litovčenko, V. G. Verfasser aut Series on semiconductor science and technology 2 (DE-604)BV004175002 2 GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=002889116&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Dobrovolsky, V. N. Litovčenko, V. G. Surface electronic transport phenomena in semiconductors Series on semiconductor science and technology Transporteigenschaft (DE-588)4185924-8 gnd Halbleiteroberfläche (DE-588)4137418-6 gnd |
| subject_GND | (DE-588)4185924-8 (DE-588)4137418-6 |
| title | Surface electronic transport phenomena in semiconductors |
| title_auth | Surface electronic transport phenomena in semiconductors |
| title_exact_search | Surface electronic transport phenomena in semiconductors |
| title_full | Surface electronic transport phenomena in semiconductors V. N. Dobrovolsky and V. G. Litovchenko |
| title_fullStr | Surface electronic transport phenomena in semiconductors V. N. Dobrovolsky and V. G. Litovchenko |
| title_full_unstemmed | Surface electronic transport phenomena in semiconductors V. N. Dobrovolsky and V. G. Litovchenko |
| title_short | Surface electronic transport phenomena in semiconductors |
| title_sort | surface electronic transport phenomena in semiconductors |
| topic | Transporteigenschaft (DE-588)4185924-8 gnd Halbleiteroberfläche (DE-588)4137418-6 gnd |
| topic_facet | Transporteigenschaft Halbleiteroberfläche |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=002889116&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| volume_link | (DE-604)BV004175002 |
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